Assignment no.

1. For the 0.25-μm process characterized by VDD=2.5V, Vtn=−Vtp= 0.5V,

Kn’=3.5Kp’=110 μA/V2, find out the tPLH, tPHL, and tP for an inverter for which
(W/L)n= 1.5 and (W/L)p= 3, and for C = 10 fF. Use both the approach based on
average currents and that based on equivalent resistances, and compare the results
obtained. If to save on power dissipation, the inverter is operated at V DD = 2.0V, by
what factor does tP change?

2. For a CMOS inverter fabricated in a 0.18-μm process with VDD=1.8, Vtn=−Vtp=

0.5V, Kn’=4Kp’=300 μA/V2, find out the tPLH, tPHL, and tP for an inverter for which
(W/L)n= 1.5 and (W/L)p= 3, and for C = 10 fF. Use both the approach based on
average currents and that based on equivalent resistances.

3. For a CMOS inverter fabricated in a 0.13-μm process, use the equivalent-

resistances approach to determine (W/L)n and (W/L)p so that tPLH = tPHL = 50 ps
when the effective load capacitance C = 20 fF.