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z Advanced high cell density Trench technology Dual SOP8 Pin Configuration
z Super Low Gate Charge
D2 D2
z Excellent CdV/dt effect decline D1 D1
z 100% EAS Guaranteed
z Green Device Available
G2
S2
G1
Absolute Maximum Ratings S1
Thermal Data
1
QM3214S
Dual N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A
4.The power dissipation is limited by 150℃ junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
2
QM3214S
Dual N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
40 22
35 VGS=10V ID=8A
VGS=7V
30
ID Drain Current (A)
VGS=5V
18
25
RDSON (mΩ)
VGS=4.5V
20 VGS=3V
15
14
10
0 10
0 0.5 1 1.5 2 2.5 3 2 4 6 8 10
VDS , Drain-to-Source Voltage (V) VGS (V)
VDS=15V
10 ID=8A
VGS Gate to Source Voltage (V)
7.5
IS Source Current(A)
6 5
TJ=150℃ TJ=25℃
4
2.5
0 0
0 0.3 0.6 0.9 1.2 0 5 10 15 20
VSD , Source-to-Drain Voltage (V) QG , Total Gate Charge (nC)
1 1.5
0.5 1.0
0.5
0
-50 0 50 100 150 -50 0 50 100 150
TJ ,Junction Temperature ( ℃) TJ , Junction Temperature (℃)
3
QM3214S
Dual N-Ch 30V Fast Switching MOSFETs
10000
F=1.0MHz 100.00
100us
10.00
Ciss
Capacitance (pF)
1000 1ms
10ms
ID (A)
1.00
Coss
100ms
100
Crss
0.10
o DC
TA=25 C
Single Pulse
10
0.01
1 5 9 13 17 21 25
VDS Drain to Source Voltage(V) 0.01 0.1 1 10 100
VDS (V)
1
Normalized Thermal Response (RθJA)
DUTY=0.5
0.2
0.1 0.1
0.05
0.01 P DM T ON
0.01
T
D = TON/T
SINGLE
TJpeak = TC+P DMXRθJC
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)