, Una.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
U.S.A. FAX: (973) 376-8960

BF256A/BF256B/BF256C

N-Channel RF Amplifiers
• This device is designed for VHF/UHF amplifiers. *'
• Sourced from process 50.

1
TO-92
LGate 2. Source 3. Drain

AbSOlUte Maximum Ratings Ta=25°C unless otherwise noted

Symbol Parameter Value Units
VDG Drain-Gate Voltage 30 V
VGS Gate-Source Voltage -30 V
IGF Forward Gate Current 10 mA
PD Total Device Dissipation @TA=25°C 350 mW
Derate above 25°C 2.8 mW/°C
TSTG Operating and storage Temperature Range -55 - 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max Unte
Off Characteristics
V(8R)GSS
Gate-Source Breakdown Voltage VDS = 0. ! G =1uA -30 V
VGS Gate-Source VDS = 15V,lD = 200nA -0.5 -7.5 V
VGS(off) Gate-Source Cutoff Voltage V DS =15V, !D = 10nA -0.5 -8 V
IGSS Gate Reverse Current VGS = -20V, VGS = 0 -5 nA
On Characteristics
toss Zero-Gate Voltage Drain Current
BF256A VGS = 15V, VGS = 0 3 7 mA
BF256B 6 13
BF256C 11 18
Small Signal Characteristics
gfs Common Source Forward Transconductance VDS = 15V, VGS = 0, f= 1KHz 4.5 mmhos

N.I .Semi-Conductors reserves the right to change test conditions, parameter limit* .md package dimensions without notice
Inrbrmution lumished by NJ Semi-Conductors it believed to he hoth uccurnlc nml reliable ,H the linw of guing to press. However VI
Semi•(, iiiiJutlor* .bMiincs no resptiiuibility for ;my ermrs i'r uiniuiuiis discovered in its use NJ Semi-Condtuh.rs cn<;our:)«»
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 TO-92

0.46 ±0.10

1.27TYP 1.27TYP n ,„ +0.10

0. J8 -0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20

(R2.29)