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SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE13007G is designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. It is particularly http://onsemi.com
suited for 115 and 220 V SWITCHMODE applications such as
Switching Regulators, Inverters, Motor Controls, Solenoid/Relay POWER TRANSISTOR
drivers and Deflection circuits. 8.0 AMPERES
Features 400 VOLTS − 80 WATTS
• VCEO(sus) 400 V
• Reverse Bias SOA with Inductive Loads @ TC = 100°C
• 700 V Blocking Capability
• SOA and Switching Applications Information
• Standard TO−220
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage VCEO 400 Vdc
TO−220AB
Collector−Base Breakdown Voltage VCES 700 Vdc CASE 221A−09
STYLE 1
Emitter−Base Voltage VEBO 9.0 Vdc
Collector Current − Continuous IC 8.0 Adc
− Peak (Note 1) ICM 16 1
2
Base Current − Continuous IB 4.0 Adc 3
− Peak (Note 1) IBM 8.0
*For additional information on our Pb−Free strategy and soldering details, please MJE13007G TO−220 50 Units / Rail
download the ON Semiconductor Soldering and Mounting Techniques (Pb−Free)
Reference Manual, SOLDERRM/D.
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased IS/b See Figure 6
Clamped Inductive SOA with Base Reverse Biased − See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE −
(IC = 2.0 Adc, VCE = 5.0 Vdc) 8.0 − 40
(IC = 5.0 Adc, VCE = 5.0 Vdc) 5.0 − 30
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 2.0 Adc, IB = 0.4 Adc) − − 1.0
(IC = 5.0 Adc, IB = 1.0 Adc) − − 2.0
(IC = 8.0 Adc, IB = 2.0 Adc) − − 3.0
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C) − − 3.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT 4.0 14 − MHz
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
Output Capacitance Cob − 80 − pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time td − 0.025 0.1 ms
Rise Time (VCC = 125 Vdc, IC = 5.0 A, tr − 0.5 1.5
IB1 = IB2 = 1.0 A, tp = 25 ms,
Storage Time Duty Cycle ≤ 1.0%) ts − 1.8 3.0
Fall Time tf − 0.23 0.7
Inductive Load, Clamped (Table 1)
Voltage Storage Time VCC = 15 Vdc, IC = 5.0 A TC = 25°C tsv − 1.2 2.0 ms
Vclamp = 300 Vdc TC = 100°C − 1.6 3.0
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MJE13007G
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
1
1
0.5
TC = - 40°C 0.2
0.8 TC = - 40°C
25°C 0.1
25°C
0.6 0.05
100°C
100°C
0.02
0.4 0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
3
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C
2.5
1.5 IC = 8 A
IC = 5 A
1
IC = 3 A
0.5 IC = 1 A
0
0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 10
IB, BASE CURRENT (AMPS)
100 10000
Cib TJ = 25°C
TJ = 100°C
hFE , DC CURRENT GAIN
C, CAPACITANCE (pF)
1000
25°C
10 40°C
Cob
VCE = 5 V 100
1 10
0.01 0.1 1 10 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)
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MJE13007G
100 10
50 Extended SOA @ 1 ms, 10 ms
20 8
IC, COLLECTOR CURRENT (AMPS)
1
0.7
D = 0.5
0.5
D = 0.2
0.2
D = 0.1
0.1 RqJC(t) = r(t) RqJC
0.07 D = 0.05 P(pk) RqJC = 1.56°C/W MAX
0.05 D CURVES APPLY FOR POWER
D = 0.02 t1 PULSE TRAIN SHOWN
t2 READ TIME AT t1
0.02 TJ(pk) - TC = P(pk) RqJC(t)
D = 0.01 DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 10k
t, TIME (msec)
Figure 9. Typical Thermal Response for MJE13007
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MJE13007G
INTRODUCTION at 25°C and 100°C. Increasing the reverse bias will give
The primary considerations when selecting a power some improvement in device blocking capability.
transistor for SWITCHMODE applications are voltage and The sustaining or active region voltage requirements in
switching applications occur during turn−on and turn−off. If
current ratings, switching speed, and energy handling
capability. In this section, these specifications will be the load contains a significant capacitive component, high
current and voltage can exist simultaneously during turn−on
discussed and related to the circuit examples illustrated in
and the pulsed forward bias SOA curves (Figure 6) are the
Table 2. (Note 1)
proper design limits.
VOLTAGE REQUIREMENTS For inductive loads, high voltage and current must be
sustained simultaneously during turn−off, in most cases,
Both blocking voltage and sustaining voltage are
with the base to emitter junction reverse biased. Under these
important in SWITCHMODE applications. conditions the collector voltage must be held to a safe level
Circuits B and C in Table 2 illustrate applications that
at or below a specific value of collector current. This can be
require high blocking voltage capability. In both circuits the accomplished by several means such as active clamping, RC
switching transistor is subjected to voltages substantially snubbing, load line shaping, etc. The safe level for these
higher than VCC after the device is completely off (see load
devices is specified as a Reverse Bias Safe Operating Area
line diagrams at IC = Ileakage ≈ 0 in Table 2). The blocking (Figure 7) which represents voltage−current conditions that
capability at this point depends on the base to emitter
can be sustained during reverse biased turn−off. This rating
conditions and the device junction temperature. Since the
is verified under clamped conditions so that the device is
highest device capability occurs when the base to emitter never subjected to an avalanche mode.
junction is reverse biased (VCEV), this is the recommended
NOTE: 1. For detailed information on specific switching applications,
and specified use condition. Maximum ICEV at rated VCEV see ON Semiconductor Application Note AN719, AN873,
is specified at a relatively low reverse bias (1.5 Volts) both AN875, AN951.
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MJE13007G
VCC
+15
150W 100W MTP8P10
V 1 mF 100 mF L +125
3W 3W MTP8P10
TEST CIRCUITS
MUR8100E V
MPF930
RC
MUR105 RB1
MPF930 IC Vclamp = 300 Vdc
RB TUT
+10V IB
MJE210 A SCOPE
RB2 IB
5.1 k
50W 150W D
COMMON TUT VCE
3W 1
500 mF 51
MTP12N10 -4 V
Voff
1 mF
Inductive
V(BR)CEO(sus) Switching RBSOA
VALUES
CIRCUIT
VCC = 125 V
L = 10 mH L = 200 mH L = 500 mH RC = 25
RB2 = 8 RB2 = 0 RB2 = 0 W
D1 = 1N5820 OR
VCC = 20 Volts VCC = 15 Volts VCC = 15 Volts EQUIV.
IC(pk) = 100 mA RB1 selected for RB1 selected for
desired IB1 desired IB1
t1 ADJUSTED TO TYPICAL
tf CLAMPED 25 ms
WAVEFORM
TEST WAVEFORMS
IC
tf UNCLAMPED ≈ t2 OBTAIN IC +11 V
Lcoil (ICM) S
ICM t1 ≈
VCC VCE PEAK
t
t1 tf VCE 0
Lcoil (ICM)
t2 ≈
VCE Vclamp
IB1 9V
VCEM Vclamp tr, tf < 10 ns
TEST EQUIPMENT IB DUTY CYCLE = 1.0%
t SCOPE — TEKTRONIX RB AND RC ADJUSTED
TIME t2 475 OR EQUIVALENT FOR DESIRED IB AND IC
IB2
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MJE13007G
SWITCHING REQUIREMENTS
In many switching applications, a major portion of the
transistor power dissipation occurs during the fall time (tfi).
For this reason considerable effort is usually devoted to
reducing the fall time. The recommended way to accomplish
this is to reverse bias the base−emitter junction during
turn−off. The reverse biased switching characteristics for
inductive loads are shown in Figures 12 and 13 and resistive
loads in Figures 10 and 11. Usually the inductive load
components will be the dominant factor in SWITCHMODE
applications and the inductive switching data will more
closely represent the device performance in actual
application. The inductive switching characteristics are
derived from the same circuit used to specify the reverse
biased SOA curves, (see Table 1) providing correlation
between test procedures and actual use conditions.
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MJE13007G
SWITCHING PERFORMANCE
10000 10000
VCC = 125 V 7000 VCC = 125 V
IC/IB = 5 5000 ts IC/IB = 5
IB(on) = IB(off) IB(on) = IB(off)
TJ = 25°C TJ = 25°C
1000 tr PW = 25 ms
PW = 25 ms 2000
t, TIME (ns)
t, TIME (ns)
1000
700
100 500
tf
td 200
10 100
1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 10. Turn−On Time (Resistive Load) Figure 11. Turn−Off Time (Resistive Load)
10000
IC IC/IB = 5
Vclamp 5000
90% Vclamp 90% IC IB(off) = IC/2
Vclamp = 300 V tsv
tsv trv tfi tti 2000
LC = 200 mH
tc 1000 VCC = 15 V
t, TIME (ns)
500 TJ = 25°C
Vclamp
10% 10% 200 tc
Vclamp IC
IB 90% IB1 2%
IC 100
tfi
50
20
10
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
TIME
IC, COLLECTOR CURRENT (AMP)
Figure 12. Inductive Switching Figure 13. Typical Inductive Switching Times
Measurements
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MJE13007G
COLLECTOR CURRENT
PD = 3200 W 2
ton toff
300 V TURN-OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(off) ≤ 9 V
A 8A t
TURN-ON DUTY CYCLE ≤ 10% TIME
VCE
VCC VO TURN-OFF
VCC
400 V 1 700 V 1
+
VCC
COLLECTOR VOLTAGE t
Notes: TIME
1 See AN569 for Pulse Power Derating Procedure.
VCC VO
TURN-OFF (REVERSE BIAS) SOA ton
300 V
N 1.5 V ≤ VBE(off) ≤ 9 V t
B 8A
TURN-OFF DUTY CYCLE ≤ 10% VCE
LEAKAGE SPIKE
VCC +
TURN-ON VCC + N (Vo) N (Vo)
+ LEAKAGE
SPIKE VCC
+ VCC
400 V 1 700 V 1
VCC + N (Vo) COLLECTOR VOLTAGE
Notes: t
1 See AN569 for Pulse Power Derating Procedure.
t
300 V TURN-OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(off) ≤ 9 V VCE
C VO 8A
TURN-ON DUTY CYCLE ≤ 10% 2 VCC
VCC VCC
2 VCC
TURN-OFF
+
VCC 400 V 1 700 V 1 t
COLLECTOR VOLTAGE
Notes:
1 See AN569 for Pulse Power Derating Procedure.
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MJE13007G
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T S
ALLOWED.
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
K J 0.014 0.025 0.36 0.64
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V
Z
0.045
---
---
0.080
1.15
---
---
2.04
N
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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