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562
OOcn5LJO
Solid State
Power Transistors
Division
2N6178 2N6180
2N6179 2N6181
.c~///
/ .9 Large-Signal, Medium-Power Applications
Features:
• Maximum area·of-operation curves
• Planar construction for low-noise and low-leakage characteristics
"Plastic TOoS" • Low saturation voltage (2N6178, 2N61801
• High beta (2N6179, 2N61811
• Fast switching (2N6178, 2N61791
• "Plastic TO-S" package with insulated mounting hole
RCA types 2N6178, 2N6179, 2N6180, and 2N6181· are TERMINAL CONNECTIONS
silicon power transistors intended for large-signal, medium- Lead 1 - Emitter
power applications in industrial and commercial equipment. Lead 2 - Base
Lead 3 - Collector
The 2N6178 and 2N6179 are triple-diffused silicon n-p-n
Rectangular Metal Slug·Coliector
planar types. These types have features similar to the
popular 2N2102 plus higher collector-current ratings and
dissipation capability. In addition, these types utilize the new RCA-developed
"Plastic TO·5" package. This plastic package has an insu·
Types 2N6180 and 2N6181 (p·n·p complements of the lated mounting hole for ease of mounting and heat sinking
2N6178 and 2N6179, respectively) are double-diffused,. for optimum thermal contact.
epitaxial-planar devices. These types have features similar to
the 2N4036 plus higher collector-current ratings and dissi- • Formerly RCA Dev. Nos. TA7554-TA7557, respectively.
pation capability.
310 5·72
File No. 562 2N6178·2N6181
VCB VCE VBE IC IB Min. Max. Min. Max. Min. Max. Min. Max.
80 0.5
Collector-Cutoff Current 60 0.5
ICBO pA
With emitter open -80 -0.5
-60 -0.5
60 0 -
With base open ICEO
45 0 - mA
-60 0 - -1
-45 0 - -1
100 -1.5 0.1
75 -1.5 0.1
With base reverse·b~ased
-100 1.5 -0.1
-75 1.5 -0.1
ICEV mA
70 -1.5 0.5
With base reverse-biased 45 -1.5 0.5
and TC = l00 0 C -70 1.5 - -0.5
-45 1.5 - -0.5
-7 0 0.1
-5 0.1
Emitter-Cutoff Current lEBO mA
0 - -0.1
0 - -0.1
Emitter-la-Base Breakdown
Voltage (IE = 0,1 mAl VIBRIEBO V
-7 -5
Collector-la-Emitter
Breakdown Voltage: -1.5 0.1 100 75
With base-emitter VIBRICEV V
1.5 -0.1 - -100 -75
junction reverse-biased
100 0 75 50
With base open VtBRICEO V
100 0 - -75 50
Collector-ta-Emitter
Sustaining Voltage:
100 90 65
With external base-to- VeER(susl 8 V
-100 -90 -65
emitter resistance
tRBEI- lOOn
100 0 75 50
With base open VCEO(SUS)a V
-100 0 - -75 -50
Collector-ta-Emitter 500 50 - 0.5 0.8
Saturation Voltage
Vee (sat) V
500 50 0.7 1.2
Base-la-Emitter Saturation
VBE(sat)
500 50 - 1.2 1.5
V
Voltage -500 -50 - -1.2 - -1.5
Output Capacitance 10 12 20 12 20
(At 1 MHz) Cabo pF
-10 25 40 25 40
4 50 30
-4 -50 30
DC Forward-Current Transfer 2 500b 30 130 40 250
Ratio hFE -2 -50ob 30 130 40 250
2 l000b 10
-2 -looob 10
Second-Breakdown Collector VCC'
Current c, d 200 200
ISlb 50 mA
(With base forward-biased) -50 - -150 - -150
50 50 50
Gain-Bandwidth Product fT -4 -50 50 50 - MH,
Magnitude of Common
Emitter, Small·Signal, Short·
Circuit Forward-Current
Transfer Ratio If"" 10 MHz)
Ihf·1 -4
50
-50
311
2N6178-2N6181 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 562
VCB VCE VBE IC IB Min. Max. Min. Max. Min. Max. Min. Max.
Saturated Switching Time' Vee 500 50 - BO - 80 - - -
(See Fig. 30 & 31) ton 30 n,
-500 -50 - - - - - 100 - 100
Turn·on Time -30
VCC=
Turn-off Time toff 30
500 50 - 800 - BOO - - - -
n,
-500 -50 - - - - - 1000 - 1000
-30
Thermal Resistance:
Junction-la-Case ReJC - 5 - 5 - 5 - 5 °C/W
N-P·N
u
~
13
1
B
6
\\
\\
I.
0
-1
1\
\ \
\
!\
~
6
j
B 4
4
1f,\
d,
~\{
I
~
~
, 1 VeEO MAX. '" ~50
'2>
v
1\
~
(2N61BI)
I
VCEO MAX. '" _75 V
0.1 (2N6IBO)
0.1
6 8 10 8 100
-1 6 6 _10 8 -100
COLLECTOR·TO·EMITTER VOLTAGE (VCE)~ V
COLLECTOR· TO·EMITTER VOLT AGE (YeE) - Y
Fig.l-Maximum operating areas for Fig.2-Maximum operating areas for
2N6178 and 2N6179 at Tc=2fjOC. 2N6180and 2N6181 at TC=2fjOC.
N-P-N
,
4
Ie MAX. (CONTINUOUS)
2
I
"'I I, "'-
~
6 OC OPERATION
4 'irATION-UMITEDl
~~
~
z
w d,
~
~ 2 (,f-
TEMPERATUR~ {Tcl IO~OC
~
~~:
u
~
CASE =
~
:.l
0.1
,
6
::i
8 4
VCEO MAX.=50V
IS/b-LIMITED
(2N6179)-
I
1'=i-~6180,2N6IBI)
0.01
2
6 , 4
VCEO MAX.=75V
,
\·(2N617B)
2 4
-+ 6 ,
25 50 75 4 2 6
100 125 ISO 0.1 10 100
eASE TEMPERATURE ITc I-be COLLECTOR-TO-EMITTER VOLTAGE (VCE)-V
92C5-19892
312
File No. 562 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 2N6178-2N6181
P N-P
20
15
A. I I
~
'"
CASE TEMPERATURE CHANGE
(DoTe I E 25 0 C
"I 10
6
! 6
'\. '\. '<.
~ '\ i'-
~~
c '~\ 1\'" '\.~O'>- i'-..
~
w
~
2 \
\ r\'C 85°C
'"'"
""
I
0.8
g~
I--- [\OO'C 1\ '\ '\
.. 8 104
,
COLLECTOR-TO-EMITTER VOLTAGE {VCE)-V NUMBER OF THERMAL CYCLES
92CS-198H
92C'H9893
Fig.S-Maximum operating areas for Fig.6- Thermaf-cycling rating chart for all
2N6180 and 2N6181 at TC""I000C. types.
,,
< <,,
~ ~
~
i
{) ~
w w
;i ~
0.7 0.8
BASE·TO·EMITTER VOL lAGE (VSEI- V BASE.TO·EMITTER VOL lAGE (VSEI _ v
nCS-15000RI
9ZCS-I~OOIRI
1
u
0.8
I
O.G
~ 0.4
~ 0.2
Fig.9- Typical output characteristics for Fig. 10- Typical transfer characteristics for
2N6178 and 2N6179. 2N6178 and 2N6179.
313
2N6178-2N6181 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 562
P·N-P
-0.7 CASE TEMPERATUREITC)-25°C
-10
-0.6 -8
i
;-05 -6
!<
~-a4
~ -4
g-03
§
a- 0.2 BASE CURRENT IIal- -2mA
-0.1
~ ~ ~ ~ ~ ~ 4 ~ ~
COLLECTOR-lO-EMITTER VOLTAGE IVCE)-V
BASE. TQ.EMITIER VOLTAGE (VSE) _ V
92CS-15007RI
92CS-15002fJl
Fig. 11- Typical transfer characteristics for Fig. 12-Typical output characteristics for
2N6780and 2N67S7. 2N67S0 and 2N6787.
N-P·N
CASE TEMPERATURE (Te ,~ Z5°C
'"
:;;> CASE TEMPERATURE (TC ).25°C
~.Loo
.,-
,,"~
.(1) VCER (sUII)
0:-" 90
"'Iil
"'u t"-.....
CHANNEL A !::~ ...........
~g 80 2N6178
TO TEKTRONIX
15mH OSCilLOSCOPE ';-'::"1 VCEO(sUII)
MODEL No. 503,
~_j...::CH.::.A:nNNEL B OR EQUIVALENT ~! 70 VCER (sus) IT
u",
II
~
-
Vee
IO-50V)
COMMON
"''''
j$160
o~
u",
"'co
'"" ...........
t--
I II
2N6179
In i~ !So
o.5W -.J VCEO (sus)
zo
2:> 40 I II
FOR 2N61BO OR 2NGle., REVERSE POLARITY OF Yea AND Vee
10
4 6 •
100
2 4
IK •• 2 4
••10K
EXTERNAL BASE-TO-EMITTER RESISTANCE (RBE)-n
92CS-19898
314
File No. 562 _ _ _ _ _ _ _ _ _ _ _ _ _ _-,-_ _ _ _ _ _ _ _ _ 2N6178-2N6181
P-N-P
~:> -100 CASE TEMPERATURE (TC I = 25"C
- _ _ _-r-_.....,:"cEQ(susl t-____-....__-..::VC:::ER(susl
~ I VeER (susl
I I
~"I-90 I""'-... -tA--ie - ----L-i-
~!! i"-.. i 50 - --
I I
50 tA
I
18
I
E~ -801---I--l_lI-++-+-~I_~_++I__I-_I_l_H ~ I I I
0-
-2:.., I ...... Z 5075 0 6590
~~
~
10 100
IK 10 K SUSTAINING VOLTAGES VCEohusl AND VCER(SU5] ARE ACCEPTABLE WHEN
TRACES FALL TO THE RIGHT AND ABOVE POINTS "A" FOR TYPE 2N6179
EXTERNAL 8ASE~TO-EMITTER RESISTANCE (RSEI- n POINTS "B" FOR TYPE 2N6178, TO THE LEFT AND BELOW POINTS "c" FOR TYPE
92CS-19899 2N6181, ANa POINTS "0" FOR TYPE 2N6180.
Fig. t 7-Collector-ro-emitter sustaining vo/- Fig, 18-0scilloscope display for measure-
tage characteristics for 2N6180 ment of sustaining voltages (test
and 2N6181. circuit shown in Fig.1S/.
N-P-N P-N-P
6 COLLECTOR-TO-EMITTER VOLTAGE (VCE)" 4 V 6 COLLECTOR-TO EMITTER VOLTAGE (VCEI"'-4 V
... ~
~
4 4
0 0
~ , ~
-
2
DO TA=~1500IC DO TA~'50.C
~
i:= 10'
,
j--...
~ , 10' .......
~ I ~-- ~
!
.1- ~--
6
~ 4
\ ~ 4
\
I~ 1\\\
AMBIENT TEMPERATURE (TAl =25" C AMBIENT TEMPERATURE (TAI"25" C
Ii!
~ , II ,
~ ~
<.>
" 10
10
, 4 6 , 10,
COLLECTOR CURRENT (leI-rnA
<.>
0
10
-10
, 4 .-102
COLLECTOR CURRENT (Icl-mA
, 4 ,
9ZCS-19901 92CS-19902
Fig. 19- Typical de beta characteristics for Fig.20- Typical dc beta characteristics for
2N6/l8 and 2N6/lB. 2N6/80 and 2N6/8/.
N-P-N N-P-N
COLLECTOR-TO EMITTER VOLTAGE (VeE' "IOV
CASE TEMPERATURE {Tc I '" 25"C
160 30
~
1" 140 f 25
:t V J
0-
~
120 V "- l:j
~
20
i" 100 / \
~
15
~
! 60 /
~
10
~
60 V 0
40
10
, 4 .,
COLLECTOR CURRENT (Ie }-mA
10'
4 o 102030-4050607080
COLLECTOR-TO-BASE VOLTAGE (VCB}-V
92C5-199(14
92CS-19903
315
2N6178-2N6181 _ _ _ _ _ _ _ _ _ _ _ _ _....,......_ _ _ _ _ _ _ _ _ _ _ File No. 562
P-N-P P-N-P
COLLECTOR-TO-EMITTER VOLTAGE {VCE'--IOV
CASE TEMPERATURE (TC l s 2.5° C
"- 3D 160
i "'"I
1 25 ~ 140
" ~
g 20
~
120
t::
~
~
15 100
./"
";.
~
~
0
10
!V
~
80
60
"""i'..
-10 -2.0 -30 -40 -50
COLLECTOR-TO-BASE VOLTAGE (VCB)-V
-60 -10 -80
92CS-1990!5
40
-10
2 4 6
•_102
COLLECTOR CURRENT {Ie 1 - mA
2 4 6 .
_10 3
92(':5-19906
Fig.23- Typical output capacitance vs. col- Fig.24- Typical gain-bandwidth product
Jector-to-base voltage for 2N6180 for 2N6180 and 2N6181.
and 2N6181.
Fig.25- Typical turn-on time for 2N6178 Fig.26-Typical turn-on time for 2N6180
and 2N6179. and 2N6181.
N-P-N N- P-N
i 2.'
REPETITION RATE· I kHz
COLLECTOR SUPPLY VOLTAGE {Vcc)-30
IBI = IB2= Ie 110
CASE TEMPERATURE (Tc I" 25°C
1.5
!
2N6178
2N6179
0.'
10 20 30 40 !SO 60 70 80
200 400 600
COLLECTOR-le-EMITTER VOLTA~E (VCE I-v COLLEeTO~ CURRENT (lel-mA
92CS-19909
Fig.27-Maximum operating conditions, 92CS-19910
resistive-load switching between Fig.28- Typical turn·off time for 2N6178
saturation and cutoff for 2N6178 and 2N6179.
and 2N6179.
316
File No. 562 - - - - - - - - - - - - -_ _ _ _ _ _ _ _ _ _ _ _ 2N6178-2N6181
P-N-P
.I -2.5
U
H
- -2
~
a -loS
L, 2NGIBO
~ -0.5
2N6/81
-200 -400 -600 -aOD -/000 -10 -20 -30 -40 -50 -60 -70 80
COLLECTOR CURRENT (Ic)-mA COLLECTOR-TO-EMITTER VOLTAGE {VCE I-v
92CS-19911
92CS-19912
Fig.29-Typica/ turn--off time for 2N6180 Fig.3D-Maximum operating conditions,
and 2N6181. resistive-load switching between
saturation and cutoff for 2N6180
and 2N6181.
Izon
INPUT WAVE FORM
5.F
::::::0 I
INPUT FROM PULSE
GENERATOR
PULSE OURATION=20~s
REPETITION RATE~ I kHz
'IS, AND 182 MEASURED WITH TEKTRONIX CIRCUIT PROBE P6019 AND TYPE 134
AMPLIFIER, OR EQUIVALENT
92CS-19913 * FOR 2N6180 OR 2NGI81 REVERSE DIRECTION OF SASE
CURRENT AND COLLECTOR CURRENT WAVE FORMS.
nCS-19914
317