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+
"0 where
- +
A = G z / ( 2 c i ) ,C = ( C i C z / 2 ) / ( C i C z / 2 ) ,
WO = d m
(c) is the corner frequency and
Fig. 2. Class D voltage-driven rectifiers. (a) Half-wave rectifier. (b) QL 2 R i / ( ~ o L=
) 2Ri/Zo
Transformer center-tappedrectifier. (c) Bridge rectifer.
is the normalized load resistance (or the loaded quality factor).
The factor 2 arises from the configuration of a single inverter
2) The power MOSFET's are modeled by switches with (1 or 2) in which the value of the parallel capacitor is C2/2
ON-resistances TDS. and the load is 2&. Using (3), (6), and (7), one arrives at the
3) The reactive components of the resonant circuits are output voltage of the inverter
passive, linear, time invariant, and do not have parasitic
resonances.
4) Components of both resonant circuits are identical.
v2
4
= V,cos(wt - -) (2)
3 Let us denote
where
2
v, = -VI
lr
(3)
and 4 is the phase shift between v1 and v2. The phasors of the
and
voltages at the input of the resonant circuits are expressed by
v1= Vmej(@/2) (4) W w wo A
b ( - , A ) = (- - --).
WO wo wA+1
CZARKOWSKI AND KAZIMIERCZUK: PHASE-CONTROLLED SERIES-PARALLEL RESONANT CONVERTER 311
Hence, 1 MI I
n 4.
2.
I.
Equations (15) and (16) differ by terms containing szn($/2), Fig. 4. Three-dimensional representation of the magnitude of the dc-to-ac
transfer function of the phase-controlled Class D series-parallel inverter. (a)
which are close to zero at low values of 4.Therefore, the 1 . l f I ) as a function of Q L and 0 at f / f o = 1.1 and -4= 1. (b) l~bfllas
current imbalance between the two inverters is small. Since a function of Q L and -4at f / f o = 1.1 and d = 0. (c) l M ~ las a function
of f / f o and A at Q L = 1 and d = 0. (d) IMII as a function of QLand
the amplitudes ImlZo/VI and Im2Zo/VI decrease with 4,the
f / f o at A = 1 and o = 0.
converter offers good part-load efficiency.
Close examination shows that the peak transistor currents
are twice as high as those in a full-bridge PWM converter at are calculated and their angles are examined. Another method
the same output power. for determining the type of the load for the switches is to
To determine whether the switches are loaded capacitively calculate the impedances Z1 = V1/11 and 2 2 = V2/I2 seen
or inductively, complex powers at the fundamental frequency by the voltage sources w1 and 212 at the fundamental frequency.
IEEE TRANSACnONS ON POWER EIEClXONICS. VOL. 8, NO3 , 1993
312
r . \ ,
120.
90.
60.
30.
4. 200.
I. -
0. 0.
-
200. 0.
1.
Qb.
(b)
Fig. 5. Three-dimensional representation of the normalized amplitudes of
the currents through the resonant circuits atf/ f o = 1.1 and A = 1. (a) (b)
I,,,~ZO/V1versus Q L and 4 (b) I,2Z0/1.j versus Q L and 0.
Fig. 6 . Three-dimensional representation of the power angles 4"i and ~2 at
f / f o = 1.1 and A = 1. (a) ~ ' versus
1 Q L and 0.(b) $9 versus Q L and 0.
The complex power supplied by the voltage source 211 is
1
s1 = -v11;
2
- zvl'
-
n2Z,b( z .A )
d, z,A ) + szn(
-b( $)COS( $) +j[a( 2,A) - c o s 2 ( $ ) ]
X
4 E ' A ) -Ji&b(EA
=) SI 1 e J W 1= Pi +jQi (17)
where 1 5'1 1 is the apparent power, PI is the real power, Q1 is
the reactive power, and $1 = Arg(S1) is the principal argument
of SI.The power supplied by the voltage source v2 is
d
-b( 2,A ) - szn( $)cos( $ ) + j [ a (E.-4) - cos2( $ ) ]
x L
a( L
WO .-4) - j & b ( E.-4)
= 1S2(e31112
= P2 + j Q 2 (18)
where (5'2) is the apparent power, P2 is the real power, Q2 Fig. 7. Three-dimensional representation of the power angles zi, as a function
is the reactive power, and $12 = Arg(S2) is the principal of Qr. and o at f / f o = 1 and .4 = 1.
argument of S z . Fig. 6 depicts principal arguments $1 and
$2 as functions of 4 and QL, for f / f o = 1.1 and A = 1. The replacement of resonant capacitors C1 in Fig. 1 by
Close examination shows that $1 and $2 are always positive coupling capacitors results in a topology of a phase-controlled
for f / fo > 1.03 at A = 1. This indicates that both inverter 1 parallel resonant inverter (PC PRI). Equations that govern the
and inverter 2 are loaded by inductive loads for f/fo > 1.03 operation of PC PRI can be obtained from those given in this
at A = 1. section by setting A = 0. It can be shown that, for the PC
CZARKOWSKI AND KAZIMIERCZUK: PHASE-CONTROLLED SERIES-PARALLEL RESONANT CONVERTER 313
PRI, all switches are loaded inductively for f / f o > 1.07. The resonant capacitor C1
replacement of the capacitor Cp by an open circuit results
Im(ma,,
in a topology of a phase-controlled series resonant inverter Vclm = ___ (22)
WC1
(PC SRI). The condition of inductive loads for all switches
in the case of PC SRI is f / f o > 1, i.e., operation above and across resonant inductor L
resonance. However, equations for PC SRI must be derived
VLm = W L 4 n ( 7 n a x ) . (23)
separately because w, requires a redefinition. For PC SPRI,
the minimum operating frequency f m i n that ensures inductive
D. Efficiency of Class D PC SPRI
loads for the switches is, therefore, in the range from f o to
1.07f0 and depends bn A. As was mentioned in the previous The parasitic resistance of each series-resonant circuit is
paragraph, the condition is f / f o > 1.03 for A = 1. r = TDS + + rL +
rcl, where T D S = ( T D S 1 T D S ~ ) is
/ ~
The complex power of the fundamental component S sup- the average resistance of the on-resistances of the MOSFET’s,
plied to the inverter is given by (19), (see (19) above) where r L is the ESR of the resonant inductor L, and rc1 is the
(SI is the apparent power, P is the real power, and Q is the ESR of the resonant capacitor C1. Therefore, one can find
reactive power supplied to the inverter. The angle $ = Arg(S) the conduction power loss in the series-resonant circuits of
is the power factor angle of S and is inverter 1 and inverter 2 as Prl = r&/2 and P r 2 = rIL2/2,
respectively. Substituting (15) and (16) for Iml and Im2, one
obtains the conduction loss in four MOSFET’s, two inductors
+= L , and two capacitors C 1 (see (24) below). Using (9), the
conduction loss in the capacitor C, is found as
where rc2 is the ESR of the capacitor C2. The total conduction
The power factor angle $ is depicted in Fig. 7 as a function loss in the inverter is
of 4 and QL for f / f o = 1.1 and A = 1. Although the power
of the higher harmonics is neglected, this figure gives useful
PT = P r s f PCZ
information about the ratio of real to reactive power in the
-
-
4v;
circuit. 7r”2,2{[4$>A)l2 + &[b(:,A)12)
The output power of the Class D phase-controlled inverter
is obtained from (19) .
The maximum value of the amplitude of the current through + 2rc2(1+ A)2(-)2cos
W
WO
the resonant circuit Im(max)can be found from (15) for
operation above the resonant frequency f o . Thus, one obtains Neglecting switching losses and drive power and using (21)
the maximum value of the amplitude of the voltage across and (26), one arrives at the efficiency of the phase-controlled
314 IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 8, N0.3 , JULY 1993
0.
where P2 and PO are the input and output powers of the
rectifier, respectively.
60 200.-0. '* (at The ac-to-dc voltage transfer function of the rectifier is
120 90
80
100
- 80 -
g
!
70
60
-3
U
60
50
40 40
20 30
15 45 75 105 150 160 170 180 190 200
R L ( V WV)
.-...
70
VR E
84
81
78
M-Sl
'
15
I
45
I
75
I
105
R L W
and (a)
95.5 -
MR
95 ,
-F 94.5
e
VDRM= -Vo.
2
R
(40)
94
93.5
15
i 45
R L P )
75 105
(b)
IV. DESIGNEXAMPLE Fig. 12. Calculated effciencies of the inverter and the rectifier versus load
The design procedure is illustrated by a design example of a resistance RL at V1=150 V and Vo=28 V. (a) Effciency of the inverter 91.
(b) Effciency of the rectifier 1 ) ~ .
transformer phase-controlled series-parallel resonant converter
that consists of an inverter of Fig. 1 and a center-tapped
rectifier of Fig. 2(b). The specifications of the converter are: The maximum value of the output power is PO,,, =
VI = 150 to 180 V, Vo = 28 V, and R L , ~ ~ R.
= 15 V$/&,in = 52.3 W. Assume that the rectifier efficiency at
IEEE TRAMACTIONS ON POWER ELELTKONICS, VOL. 8. N 0 . 3 , JULY 1993
-tapped
Voltage
.ircuit\.
current
V k \ i ~Rt I ~ IcI I 11 Kr W I rs
To \ didcite the aid>u s . J hie'idboarti of the convertei
designed 111 the pic\ IOLI\ \cctioii b a s built, ucing IRF630
MOSFET's (International Kcctifier) as switches, MBR 10100
Schottky diodes ( AZotorola). I, = 2x0 / / H . = 13.6 nF.
( ' ? = 27.2 nF. an isolation transfurnrcr with / I = 2. I,, = 1.:1
mH. and (.',f = IO0 /'I-. Ail R . I L A X 1 8 (Micro Linear) IC was
uvxi to drile the MC)SFE'l"b ant1 shift the phase Q. The
measured value of the resoiiaiit treclucncq' was 1 15.5 k H r
full load is 94% and the transformer turn> ratio is 2:l. Llsing and the measured ~ a l u oc l the sv, itching frequency ,fq was 127
(34) and (36). one can calculate the minimum value of the AH[, The ON-resistaric.r. ot' cacti MOSFET was I ' L ) , ~= 0.4 (2.
input resistance of the rectifier R,,,,,,, 7S.80 0.Consider the value of ESK of each resonant inductor at 116 kHr. was
1
operation at full power. From ( 3 s ) . .Ill( = 0.422).Assume r 1 = 1..-) 0 . and ilie \ alue o f ESR of each resonant capacitor
that r / I = 9G%, ( J L , , ? , , ) = 0.75. - / d o = I . 1. anti . I
1 1. From at 127 kH/ \vas I ~: 0 . 2 f!, Hcnce. the parasitic resistance
the relationship \ ; I / \ > = ~411,.1A11~ and (2X). 1.211( = O.-L>!H i u a s found to be 2. I i!. 'fhc ESK of the capacitor was
From (13). (.os(o / 2 ) = 0.94, which corresponds to ('1 = 40" I ( .2 = 0. i 5 1 . 'I'hc e\timatccl tiuiihtormer efficiency /it). was
and is a suitable value for full power. Assuming = 115 07%. The measured \slur of' the tic rehistance of the filter
kHz. one obtains L = % l Z , , , , , , , / ( ~ ~ , C ) ~ ~ inductor was 1.1 = 0 . 2 !! iriid the iic resistance of the tilter
and C' = l / ( ~ i : L ) = 6.59 nF. Using ( 1 5 ) and (23). one inductor at I O 0 LHr \ h a > I , / I = 2. I C ? . The ESR of the filter
can calculate the maximum value of the \,(>Itageacros'r the capacitor ( ' / wa\ I.( = i 0 in!!. The parameters of the diode
resonant capacitor I>,1,,1 = 22s V and aci.o\s the resonant iiiodel nerc 11. = ( 1 . 1 I'; t i i d li1 1
: 7.-) m(1.
Fig. 16. Voltage and current wavetomi\ of the converter with 'I center-rapped
rectifier at Vi =I50 V. CFO. and a11 opcn circuit at the output. (a! Voltage
I ' V J acre\\ capacitor C'l and ciirrt'nt\i~and 12 through the re~onant
circuit\.
Vertical : 20 V and 1 .4/div: Iiorimntal: 2 2 p r / div. th! Voltnge I , , )
and current (11 of rectitirr diode. Vci-tical : 5 V and I .A/di\: honroni:il:
2 / I \ / div.
(b)
Fly. 18. Wa\efomi\of drain-to-\ource voltages I ' / ) . ~ and ( . / I . o f rhe
bottom transistor\ of the imerters at I = 28 V and I ? , = IS <!. 150 \'.
t h ) I ; = XI0 V. Vertical: S O V/di\: horimntal: 2 / I \ / div.