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BJT
6. OLEDs can be sprayed onto a substrate using an inkjet printer.
1. Refer to this figure. Determine the minimum value of IB that will
A produce saturation.
True
.
A
0.05 mA
.
B
False
.
B
2.085 mA
.
C D C
1.065 mA –9.2 V 0.011
. . .
D D
7.4 mA 90
. .
7. When a transistor is used as a switch, it is stable in which two
distinct regions?
A
4. What is the ratio of IC to IB? saturation and active 11. Refer to this figure. The value of VCE is:
.
A
. DC B
active and cutoff
.
B
hFE
. C
saturation and cutoff
.
C
DC
. D
none of the above
.
D
. either DC or hFE, but not DC
13.
A 10. A BJT has an IB of 50 A and a DC of 75; IC is:
9.2 V
. A certain transistor has IC = 15 mA and IB = 167 A; is:
DC A
375 mA
A .
B 15
9.9 V .
.
B
37.5 mA
B .
C 167
–9.9 V .
.
C B
3.75 mA
. . / (
DC DC + 1)
D C
0.375 mA DC
. .
D
. either / (
DC DC + 1) or , but not
DC DC
14. Refer to this figure. The value of VBE is:
A 20.
. 92 k
Refer to this figure. The value of DC = 100 and VIN = 8 V.
Determine IC(sat).
B
. 9.1 M
C
. 100 k
D
A . 150 k
0.6 V
.
B
0.7 V 17.
.
The value of DC
C A
1.2 V is fixed for any particular transistor. A
. . 18 mA
.
D B
0.079 V varies with temperature. B
. . 7.92 mA
.
C C
varies with IC. 1.8 mA
. .
15. What are the two types of bipolar junction transistors?
A D D
npn and pnp varies with temperature and IC.
. . . 8 A
B
pnn and nnp
.
18. 21. Which of the following is true for an npn or pnp transistor?
C A transistor data sheet usually identifies as
DC
ppn and nnp A
. A IE = IB + IC
hre. .
.
D
pts and stp B
. B IB = IC+ IE
hFE. .
.
C
C IC = IB + IE
16. IC. .
.
In this circuit DC = 100 and VIN = 8 V. The value of RB that will
produce saturation is: D
D none of the above
VCE. .
.
22. What is the order of doping, from heavily to lightly doped, for
19. What is the ratio of IC to IE? each region?
A A base, collector, emitter
. DC
.
D B
none of the above open bias resistor(s)
. . BJT TRUE OR FALSE
C 1. It is best to check a transistor in-circuit before removing it.
external opens and shorts on the circuit board
.
24. The magnitude of dark current in a phototransistor usually falls A
in what range? True
D .
all of the above
A .
mA B
. False
.
B
μA 28. The dc load line on a family of collector characteristic curves of
.
a transistor shows the
2. A BJT consists of three regions: base, emitter, and collector.
C A
nA saturation region.
. . A
True
.
D B
pA cutoff region.
. . B
False
.
C
active region.
.
25. A 35 mV signal is applied to the base of a properly biased
transistor with an r'e = 8 and RC = 1 k . The output signal 3. BJT transistors are of two general types, npn and pnp.
D
voltage at the collector is: all of the above
. A
True
A .
3.5 V
.
B
29. Refer to this figure. Determine the minimum value of VIN from False
B .
28.57 V the following that will saturate this transistor.
.
C
4.375 mV 4. In saturation, both the base-collector and base-emitter junctions
.
are forward-biased.
D A
4.375 V True
. .
B A C
False True Ohmmeter (VOM)
. . .
B D
False All of the above
. .
5.
DC is the ratio of IC to IE.
A
True 11. Phototransistors usually respond only to light in the red or 4. For what kind of amplifications can the active region of the
.
infrared spectrum. common-emitter configuration be used?
B A A
False True Voltage
. . .
B B
False Current
. .
6. PD(max) is usually specified at 25°C. For higher temperatures, the
value of PD(max) is greater.
C
Power
A .
True
. BJT DEVICES
D
All of the above
B .
False 1. How much is the base-to-emitter voltage of a transistor in the
. "on" state?
A
0V
. 5. In the active region, while the collector-base junction is
________-biased, the base-emitter is ________-biased.
B A
0.7 V forward, forward
. .
7. Both junctions of a BJT should be forward-biased for linear
operation.
C B
0.7 mV forward, reverse
A . .
True
.
D C
Undefined reverse, forward
B . .
False
.
D
reverse, reverse
.
2. How many layers of material does a transistor have?
8. If maximum IC and maximum VCE are applied to a BJT,
A
maximum power dissipation will not be exceeded. 1
.
A 6. A transistor can be checked using a(n) ________.
True
. B
2 A
. curve tracer
.
B
False
. C
3 B
. digital meter
.
D C
9. 4 ohmmeter
DC = IE/IC . .
A
True D
. Any of the above
.
3. Which of the following equipment can check the condition of a
B transistor?
False
.
A
Current tracer
. 7. What range of resistor values would you get when checking a
transistor for forward- and reverse-biased conditions by an
B ohmmeter?
10. Av RC/r'e Digital display meter (DDM)
. A 100 to a few k , exceeding 100 k
11. An example of a pnp silicon transistor is a 2N4123.
. B
Common-emitter
A .
True
B .
. Exceeding 100 k , 100 to a few k C
Common-collector
B .
False
C .
. Exceeding 100 k , exceeding 100 k D
All of the above
.
D
100 to a few k , 100 to a few k 12. Which of the following is (are) the terminal(s) of a transistor?
.
A
Emitter 15. What does a reading of a large or small resistance in forward-
.
and reverse-biased conditions indicate when checking a
8. Calculate minority current ICO if IC = 20.002 mA and IC majority = transistor using an ohmmeter?
B
20 mA. Base
. A
Faulty device
A .
. 20 A C
Collector
. B
Good device
B .
. 0.002 A D
All of the above
. C
Bad ohmmeter
C .
2 nA
.
D
13. None of the above
D .
2 A Use this table of collector characteristics to calculate ac at
.
VCE = 15 V and IB = 30 A.
16.
9. What is (are) the component(s) of electrical characteristics on Determine the value of when = 100.
the specification sheets? A
1.01
A .
On
.
B
101
B .
Off
.
C
0.99
C .
Small-signal characteristics
.
D
Cannot be solved with the information provided
D .
All of the above
.
A
100
.
17. Transistors are ________-terminal devices.
10. In which region are both the collector-base and base-emitter B
106 A
junctions forward-biased? . 2
.
A
Active C
. 50 B
. 3
.
B
Cutoff D
. 400 C
. 4
.
C
Saturation
. D
5
14. Which of the following configurations can a transistor set up? .
D
All of the above A
. Common-base
.
18.
Calculate at VCE = 15 V and IB = 30 A. .
dc
23. What are the ranges of the ac input and output resistance for a
common-base configuration?
A
. 10 –100 , 50 k –1 M
B
. 50 k –1 M , 10 –100
A C
100 . 10 –100 k , 50 –1 k
.
B D
116 None of the above
. .
A
200
C .
50
.
24. What is the most frequently encountered transistor
B
180 configuration?
D .
110
. A
Common-base
C .
220
.
B
19. Which of the following can be obtained from the last scale Common-collector
D .
factor of a curve tracer? None of the above
.
A C
hFE Common-emitter
. .
21. D
B Emitter-collector
dc dc = ________ .
.
A
IB / IE
C .
ac
.
25.
B
IC / IE for this set of collector characteristics is within ________
dc
D .
. ac
percent of .
ac
C
IC / IB
.
20. D
Calculate for IC = 15 mA and VCE = 5 V. None of the above
ac .
D C
All of the above npp, ppn
. .
26. Which of the following regions is (are) part of the output
characteristics of a transistor?
D
nnp, pnp
A .
Active 30. For a properly biased pnp transistor, let IC = 10 mA and IE =
.
10.2 mA. What is the level of IB?
B A
Cutoff 0.2 A 34. What is the ratio of the total width to that of the center layer for
. .
a transistor?
C B A
Saturation 200 mA 1:15
. . .
D C B
All of the above 200 A 1:150
. . .
D C
20.2 mA 15:1
. .
27. How many individual pnp silicon transistors can be housed in a
14-pin plastic dual-in-line package?
D
150:1
A .
4 31. What is (are) the component(s) of most specification sheets
.
provided by the manufacturer?
B A
7 Maximum ratings 35. Which component of the collector current IC is called the
. .
leakage current?
C B A
10 Thermal characteristics Majority
. . .
D C B
14 Electrical characteristics Independent
. . .
D C
All of the above Minority
. .
28. In what decade was the first transistor created?
A D
1930s None of the above
. .
32.
What is dc equal to?
B
1940s
. A
IB / IE
.
C
BJT DEVICES FILL IN THE BLANKS
1950s
. B
IC / IE
. 1. The term bipolar reflects the fact that ________ and ________
D participate in the injection process into the oppositely polarized
1960s material.
. C
IC / IB
. A
holes, neutrons
.
D
29. Most specification sheets are broken down into ________. None of the above
. B
holes, electrons
A .
maximum ratings
.
C
33. List the types of bipolar junction transistors. neutrons, electrons
B .
thermal characteristics
. A
ppn, npn
. D None of the above
9. The doping of the sandwiched layer is ________ that of the
. . outer layers.
C A
much larger than considerably less than
. .
2. In the saturation region the collector-base junction is ________-
biased and the base-emitter junction is ________-biased for a B
D the same as
transistor. None of the above .
.
A
reverse, forward C
. considerably more than
.
B 6. Typical values of voltage amplification for the common-base
forward, reverse configurations vary from ________ and the current gain is D
. None of the above
always ________ . .
C A
reverse, reverse less than 1, 50 to 300
. .
10. The lower doping level ________ the conductivity and
D B ________ the resistivity of the material.
forward, forward 50 to 300, larger than 1
. .
A
increases, decreases
C .
50 to 300, less than 1
.
3. The step function (per step) of a curve tracer reveals the scale B
for ________. increases, increases
D .
larger than 1, 50 to 300
A .
collector current IC C
. decreases, decreases
.
B
VCE voltage 7. D
. decreases, increases
If a value of is specified for a particular transistor .
configuration it will normally be used for ________ calculations.
C
base current IB
. A
ac
.
11. The leads of a transistor are typically made of ________.
D
All of the above
. B A
dc gold
. .
C B
4. The base current is the ________ of the emitter and collector ac and dc aluminum
. .
currents.
A D C
sum None of the above nickel
. . .
B D
difference All of the above
. .
8. The level of ________ is determined and displayed by
advanced digital meters if using diode-testing mode.
C
product
. A
VBE 12. If the positive lead of an ohmmeter is connected to the base
.
and the negative lead to the emitter, a low resistance reading
D would indicate a ________ transistor and a high resistance
None of the above
. B reading would indicate a ________ transistor.
IC
.
A
npn, pnp
C .
5. The outer layers of a transistor are ________ the sandwiched IB
.
layer. B
pnp, npn
D .
A IE
much smaller than .
.
C
npn, npn
.
B the same as
20. There is(are) ________ in the internal construction of a TO-92
D B package.
pnp, pnp reverse bias
. .
A
gold bond wires
C .
definitely a defective transistor
.
13. The active region of a transistor is bounded by the ________. B
a copper frame
D .
A None of the above
cutoff region .
.
C
epoxy encapsulation
.
B
saturation region
.
17. The common-collector configuration has a ________ input D
impedance and a ________ output impedance. All of the above
.
C
power dissipation curve
. A
low, high
.
D 21. The ________ region is the region normally employed for linear
All of the above
. B (undistorted) amplifiers.
high, low
.
A
active
C .
14. All amplifiers should have at least ________ terminals with high, high
.
________ terminal(s) controlling the flow between ________ B
other terminal(s). cutoff
D .
low, low
A .
2, 1, 1 C
. saturation
.
B
3, 1, 2 18. For practical transistors the level of alpha typically extends from D
. All of the above
________ to ________ with most approaching the higher end .
of the range.
C
3, 2, 1
. A
0.0, 1
.
22. The magnitude of the base current is typically on the order of
D ________ as compared to ________ for the emitter.
3, 0, 3
. B
0.90, 0.998
. A
A, A
.
C
15. The "on" and "off" characteristics refer to ________ limits while 50, 400
. B
the small-signal characteristics indicate the parameters of A, mA
.
importance to ________ operation.
D
None of the above
A . C
ac, dc . mA, A
.
B D
dc, ac 19. One p-n junction of a transistor is ________-biased and the mA, mA
. .
other one is ________-biased in the active region.
C A
ac, dc and ac reverse, reverse
. .
23. In the cutoff region the collector-base junction is ________-
biased and the base-emitter junction is ________-biased for a
D B transistor.
dc and ac, dc forward, forward
. .
A
reverse, forward
C .
reverse, forward
.
16. An OL indication on an advanced digital meter indicates B
________ while checking a transistor. forward, reverse
D .
None of the above
A .
forward bias C
. reverse, reverse
.
D . A
forward, forward hi
. .
B
Voltage-divider
. B
hr
.
24. The level of ________ is determined and displayed by
C
advanced digital meters. Emitter-follower
. C
hf
A .
VCE
. D
None of the above
. D
ho
B .
IB
.
D
high, very low
.
BJT AMPLIFIERS
C B
Between 100 and 200 high, high, high, low
. .
D C
Undefined high, high, high, high
. .
D
low, low, low, high
.
10. What is the most important r parameter for amplifier analysis?
A A
rb′ 5V
. .
17. What is the range of the input impedance of a common-base
B configuration?
B 3.7 V
rc′ .
. A
. A few ohms to a maximum of 50
C C
re′ 20 V
. . B
. 1k to 5 k
D
3V
. C
11. An emitter-follower is also known as a . 100 k to 500 k
A
common-emitter amplifier.
. D
14. You have a need to apply an amplifier with a very high power 1M to 2 M
.
gain. Which of the following would you choose?
B
common-base amplifier. A
. common-collector
.
18. The advantage that a Sziklai pair has over a Darlington pair is
C
common-collector amplifier. B
. common-base A
. higher current gain.
.
D
Darlington pair. C
. common-emitter B
. less input voltage is needed to turn it on.
.
D C
12. The ________ model fails to account for the output impedance emitter-follower higher input impedance.
. .
level of the device and the feedback effect from output to input.
D C .
higher voltage gain. 378
. .
B
Common-base
D .
. 2.25 k
19. What is the typical range of the output impedance of a
C
common-emitter configuration? Emitter-follower
.
A
. 10 to 100 22. What is the range of the current gain for BJT transistor
D
amplifiers? Voltage-divider?
.
B A
1k to 5 k less than 1
. .
D
24. For the common-emitter fixed-bias configuration, there is a one input and two outputs.
.
________ phase shift between the input and output signals.
A
0º
.
28. The emitter-follower configuration has a ________ impedance
B at the input and a ________ impedance at the output.
45º
. A
low, low
.
C
90º
. B
low, high
.
D
180º
. C
high, low
.
A
. 37.7 k
D
25. Which one of the following configurations has the lowest input high, high
.
B impedance?
. 3.77 k
A Fixed-bias
29. The differential amplifier produces outputs that are
D
collector feedback
A .
common mode.
.
B
in-phase with the input voltages. 33. Refer to this figure. You notice while servicing this amplifier that
.
the output signal at Vout is reduced from normal. The problem
could be caused by
C
the sum of the two input voltages.
.
D
the difference of the two input voltages.
.
B C
emitter.
. RB 10re 34. When the bypass capacitor is removed from a common-emitter .
amplifier, the voltage gain
C D
A output.
. ro 10RC and RB 10re increases. .
.
D
None of the above B
. decreases.
. 37. Which of the following is (are) true to achieve a good overall
voltage gain for the circuit?
C A The effect of Rs and RL must be considered as a
has very little effect.
32. The ________ configuration is frequently used for impedance . . product.
matching.
A B The effect of Rs and RL must be considered as a
fixed-bias . product and evaluated individually.
. 35. Refer to this figure. Determine the value of VC.
B C
voltage-divider bias The effect of Rs and RL must be evaluated individually.
. .
C D
emitter-follower None of the above
. .
38. To analyze the common-emitter amplifier, what must be done
to determine the dc equivalent circuit? D .
. 500
A C
leave circuit unchanged
. . 3.125
B D
effectively open circuits. 42. Which of the following gains is less than 1 for a common-base All of the above
. .
configuration?
C A
not connected to ground. Ai
. .
46. In an unbypassed emitter bias configuration hie replaces
D B ________ in the re model.
connected to ground. Av
. . A
re
.
C
Ap
. B
40. Refer to this figure. If an emitter bypass capacitor was installed,
determine the value of Rin(base). .
D
None of the above
. C
. re
D
43. Which of the following define(s) the conversion efficiency? Ib
.
A
Ac power to the load/ac input power
.
D B
All of the above It varies from a few ohms to megohms.
. .
A
. 416 C An ohmmeter cannot be used to measure the small-
. signal ac input impedance.
44. The dc emitter current of a transistor is 8 mA. What is the value
B of re?
. 5k D
A All of the above
.
. 320
C
. 50 k
B 13.3 k
48. For the collector dc feedback configuration, there is a
________ phase shift between the input and output signals.
A
0º 55. The loaded voltage gain of an amplifier is always more than the
.
no-load level.
B A
45º True
. .
C B
90º False
. .
D
180º
.
56. Which of the following configurations has a voltage gain of –
RC /re?
A
49. A common-collector amplifier has ________ input resistance, Fixed-bias common-emitter
.
________ current gain, and ________ voltage gain.
A A
high, high, low 420 B
. . Common-emitter voltage-divider with bypass capacitor
.
B B
high, low, low 50 k C Fixed-bias common-emitter and voltage-divider with
. .
. bypass capacitor
C C
high, low, high 940 D Common-emitter voltage-divider without bypass
. .
. capacitor
D
. 100.8
50. The total gain of a multistage amplifier is the ________. 57. An emitter-follower amplifier has an input impedance of 107 k
A . The input signal is 12 mV. The approximate output voltage
sum of individual voltage gains
. 53. For a common-emitter amplifier, the purpose of the emitter is (common-collector)
bypass capacitor is
A
B 8.92 V
sum of dB voltage gains A .
. no purpose, since it is shorted out by RE.
.
B
112 mV
B .
to reduce noise.
51. Which of the following configurations has an output impedance .
Zo equal to RC? C
12 mV
C .
A to despike the supply voltage.
Fixed-bias common-emitter .
.
D
8.9 mV
D .
B to maximize amplifier gain.
Common-emitter voltage-divider with bypass capacitor .
.
C Common-emitter voltage-divider without bypass 58. Which of the following is (are) true regarding the output
. capacitor 54. For BJT amplifiers, the ________ gain typically ranges from a impedance for frequencies in the midrange 100 kHz of a
level just less than 1 to a level that may exceed 1000. BJT transistor amplifier?
D
All of the above A A
. voltage The output impedance is purely resistive.
. .
B B
current It varies from a few ohms to more than 2 M .
52. Refer to this figure. Find the value of Rin(base). . .
D B
59. Refer to this figure. The output signal from the first stage of this hfe smaller, larger
. .
amplifier is 0 V. The trouble could be caused by
E. none of the above C
larger, smaller
.
D
62. What is the controlling current in a common-base larger, larger
.
configuration?
A
Ie
.
66. Refer to this figure. If an emitter bypass capacitor was installed,
what would the new Av be?
B
Ic
.
C
Ib
.
D
None of the above
.
A
an open C4.
.
B
pnp, pnp 8. The dc load line and ac load line both have the same ________
.
.
BJT AMPLIFIERS FILL IN THE BLANKS
C A
npn, npn x-intercept
. .
1. In a fixed-bias network, the input signal Vi is applied to the
________ of the transistor while the output Vo is off the
D B
________. None of the above y-intercept
. .
A
base, collector
. C
slope
.
B 5. In a hybrid equivalent circuit, ________ is determined to make
base, emitter it easier to find the other parameters.
. D
Q-point
A .
Zi
C .
emitter, collector
.
B
Zo 9. The ________ the level of RL, the ________ the level of ac
D .
None of the above voltage gain.
.
C A
Ai smaller, higher
. .
12. The ________ of the input signal is one of the first concerns in
D B
the sinusoidal ac analysis of transistor networks. IB 1
. .
A
period
. C
. D
B 16. The ________ the source resistance, the ________ the overall
frequency gain of an amplifier.
. D
None of the above
A .
larger, higher
C .
magnitude
.
B
larger, lower 20. One junction of an operating transistor is ________ and the
D .
None of the above other one is ________.
.
C A
lower, lower forward-biased, forward-biased
. .
A C
IC, IB Thevenin's theorem
. .
27. For transistor amplifiers, the no-load voltage gain is ________
B the loaded voltage gain.
IC, IE D
. All of the above
A .
smaller than
.
C
IB, IC
.
B
greater than 31. The bypass capacitor in a common-emitter configuration
.
D ________ the voltage gain.
None of the above
.
C A
the same as significantly decreases
. .
B
small, high 10. The common-base amplifier has a good voltage gain, low input
.
4. A common-collector amplifier has high input impedance, good impedance, and high current gain.
current gain, and a voltage gain of 1.
C A
small, small True
. A .
True
.
D B
high, high False
. B .
False
.
35. The output voltage and the input voltage are ________ for the FET DEVICES
common-emitter configuration. 5. The total voltage gain of a multistage amplifier is the product of
the individual stage gains.
A 1. Which of the following ratings appear(s) in the specification
in phase A
. True sheet for an FET?
.
A
B Voltages between specific terminals
45º out of phase B .
. False
.
B
C Current levels
90º out of phase .
.
6. A Darlington pair provides a very low input impedance. C
D Power dissipation
180º out of phase .
. A
True
.
D
All of the above
.
B
False
BJT AMPLIFIERS TRUE OR FALSE .
1. 2. What is the level of drain current ID for gate-to-source voltages
AC current ratios and convert directly from h VGS less than (more negative than) the pinch-off level?
ac ac
7. The output resistance of the common-emitter amplifier is
parameters. approximately equal to the collector resistance. A
zero amperes
A .
True A
. True
.
B
IDSS
B .
False B
. False
.
C
Negative value
.
D
Undefined
.
B
Equal to ID
.
C A
Depends on VDS 0.444 mA
. .
A
25 Vdc, –200 nAdc B
D . 1.333 mA
Undefined
. .
B
–25 Vdc, 10 mAdc C
. 0.111 mA
.
4. What is the range of an FET's input impedance?
C
–6 Vdc, –1.0 nAdc D
A . 4.444 mA
. 10 to 1 k .
D
None of the above
B .
. 1k to 10 k
10. Which of the following controls the level of ID?
C A
50 k to 100 k 7. At which of the following condition(s) is the depletion region VGS
. .
uniform?
D A B
1M to several hundred M No bias VDS
. . .
B C
VDS > 0 V IG
. .
5. Which of the following applies to a safe MOSFET handling?
A C D
Always pick up the transistor by the casing. VDS = VP VDG
. . .
B
bipolar, unipolar 15. The transfer curve is not defined by Shockley's equation for the
.
________.
C A
unipolar, bipolar JFET
. .
D B
unipolar, unipolar depletion-type MOSFET
. .
C
enhancement-type MOSFET
.
13. Referring to this transfer curve. Calculate (using Shockley's
equation) VGS at ID = 4mA.
D
BJT
.
B
–1.66 V
.
C
0.66 V
.
D
–0.66 V
.
A
To reduce the input impedance
.
A 18. The region to the left of the pinch-off locus is referred to as the
2.54 V ________ region.
. B
To protect the MOSFET for both polarities
. A
B saturation
–2.54 V .
. C
To increase the input impedance
. B
C cutoff
–12 V .
. D
None of the above
. C
D ohmic
Undefined .
.
D
17. Referring to the following transfer curve, determine the level of All of the above
.
VGS when the drain current is 20 mA.
14. The drain current will always be one-fourth of IDSS as long as
the gate-to-source voltage is ________ the pinch-off value.
A 19. Refer to the following curves. Calculate ID at VGS = 1 V.
one-fourth
.
B
one-half
.
C
three-fourths
.
D
21. The three terminals of the JFET are the ________, ________, 3 or 4
.
and ________.
A
gate, collector, emitter
.
25. Refer to the following figure. Calculate VGS at ID = 8 mA for k =
0.278 × 10–2 A/V2.
B
base, collector, emitter
.
C
gate, drain, source
.
D
gate, drain, emitter
.
B B
Gate 5.36 V
. .
C C
Source 7.36 V
. .
D D
All of the above 2.36 V
. .
A
8.167 mA
.
23. A BJT is a ________-controlled device. The JFET is a 26. The level of VGS that results in ID = 0 mA is defined by VGS =
B ________ - controlled device.
4.167 mA ________.
.
A A
voltage, voltage VGS(off)
C . .
6.167 mA
.
B B
voltage, current VP
D . .
0.616 mA
.
C C
current, voltage VDS
. .
C B
MOSFET enhancement-type Higher current and power ratings
. .
D C
None of the above Faster switching time
. .
D
All of the above
.
28. Which of the following applies to MOSFETs?
A No direct electrical connection between the gate
. terminal and the channel
32. Hand-held instruments are available to measure ________ for
the BJT.
B
Desirable high input impedance A
. A 1.1378 k
.
. dc
C Uses metal for the gate, drain, and source
B
. connections B 113.78
IDSS .
.
D
All of the above C
. C 11.378
VP .
.
D
D 11.378 k
29. At which of the following is the level of VDS equal to the pinch- All of the above .
.
off voltage?
A
When ID becomes equal to IDSS
. 35. Which of the following is (are) not an FET?
33. Which of the following input impedances is not valid for a
JFET? A
B n-channel
When VGS is zero volts .
. A
. 1010
B
C p-channel
IG is zero .
. B 9
. 10
C
D p-n channel
All of the above .
. C
. 108
D
n-channel and p-channel
.
D 11
30. Which of the following represent(s) the cutoff region for an . 10
FET?
A
ID = 0 mA
. FET DEVICES FILL IN THE BLANKS
34. Refer to the following characteristic curve. Calculate the
B resistance of the FET at VGS = –0.25 V if ro = 10 k .
VGS = VP 1. One of the most important characteristics of the FET is its
. ________ impedance.
C A
IG = 0 low input
. .
D B
All of the above medium input
. .
C
high input
.
31. Which of the following is (are) the advantage(s) of VMOS over
MOSFETs?
combat the possibility of thermal runaway.
D .
None of the above
. A
positive
C .
VDG
.
B
2. The pinch-off voltage continues to drop in a ________ manner negative
D .
as VGS becomes more and more negative. ID
.
A C
linear zero
. .
B 7. The ________ transistor has become one of the most important D
horizontal sens. devices used in the design and construction of integrated None of the above
. .
circuits for digital computers.
C A
Per step MOSFET
. .
11. A(n) ________ can be used to check the condition of an FET.
D B A
gm BJT digital display meter (DDM)
. . .
C B
JFET ohmmeter (VOM)
. .
4. The specification sheet provides ________ to calculate the
value of k for enhancement-type MOSFETs.
D C
None of the above curve tracer
A . .
VGS(on)
.
D
All of the above
B .
ID(on) 8. The silicon dioxide (SiO2) layer used in a MOSFET is
.
________.
C A
VGS(Th) an insulator 12. ________ has high input impedance, fast switching speeds,
. .
and lower operating power levels.
D B A
All of the above a conductor CMOS
. . .
C B
a semiconductor FET
. .
5. In an FET circuit, ________ is normally the parameter to be
determined first.
D C
None of the above BJT
A . .
VGS
.
D
None of the above
B VDS .
9. VMOS FETs have a ________ temperature coefficient that will
. .
D B
All of the above cutoff region 22. In an n-channel enhancement-type MOSFET with a fixed value
. .
of VT, the ________ the level of VGS, the ________ the
saturation level for VDS.
C
power line
. A
15. The primary difference between the construction of a MOSFET higher, more
.
and an FET is the ________.
D
All of the above
A . B
construction of the gate connection higher, less
. .
B C
low input impedance 19. The level of ________ that results in the significant increase in lower, lower
. .
drain current in enhancement-type MOSFETs is called
threshold voltage VT.
C D
threshold voltage None of the above
. A .
VDD
.
D
None of the above
. B
VDS 23. The FET resistance in the ohmic region is ________ at VP and
.
________ at the origin.
C A
16. The FET is a ________ device depending solely on either VGS smallest, largest
. .
electron (n-channel) or hole (p-channel) conduction.
A D B
unipolar VDG largest, smallest
. . .
B C
bipolar larger, smaller
. .
20. A junction field-effect transistor (JFET) is a ________ device.
C tripolar A current-controlled D smaller, larger
. B
85%.
.
C
24. In the n-channel transistor, the drain and source are connected 90%.
.
to the ________ channel while the gate is connected to the two
layers of ________ material.
D
100%.
A .
p-type, n-type
.
B
p-type, p-type 3. A common-source amplifier is similar in configuration to which
.
BJT amplifier?
C A
n-type, p-type common-base
. .
D B A
n-type, n-type common-collector 20 V
. . .
C B
common-emitter 11 V
. .
25. The transfer curve can be obtained by ________.
A D C
using Shockley's equation emitter-follower 10 V
. . .
C
characteristics
.
6. A BJT is a ________-controlled device.
D A
None of the above current
. .
B
voltage
.
FET AMPLIFIERS
A
common-emitter
.
A
increase.
B .
common-collector
.
B
decrease.
C .
common-base
.
C
remain the same.
D .
emitter-follower
.
D
distort.
.
B
common-collector
.
A
undistorted.
C .
common-base
.
B
clipped on the negative peaks.
D .
common-gate
.
C A
clipped on the positive peaks. 176 mV p-p
. .
C
48 mV p-p
.
11. Use the following equation to calculate gm for a JFET having
IDSS = 10 mA, VP = –5 V, and VGSQ = –2.5 V.
D
24 mV p-p
.
A
2 mS 14. Referring to the following figure, calculate gm for VGSQ = –1.25
.
V.
B
3 mS
.
C
A 4 mS
–7.29 .
.
D
B 5 mS
–7.50 .
.
C
–8.05
. 12. For what value of ID is gm equal to 0.5 gm0?
D A
–8.55 0 mA A
. . 2 mS
.
B
0.25 IDSS B
. 2.5 mS
10. Refer to this figure. If Vin = 1 V p-p, the output voltage Vout would .
be C
0.5 IDSS C 2.75 mS
.
. B C
BJTs 180
. .
D
3.25 mS
. C D
MOSFETs none of the above
. .
D
15. Referring to this figure, calculate the value of RD if the ac gain is any of the above
.
10. Assume VGSQ = ¼Vp. 22. Refer to this figure. If C4 opened, the signal voltage at the drain of
Q1 would
C
to create a short-circuit equivalent for ac analysis
.
D
All of the above
.
A
increase.
.
19. An FET is a ________-controlled device.
A B
. 2.2 k A decrease.
current .
.
B C
. 2.42 k B remain the same.
voltage .
.
C D
. 2.62 k distort.
.
20. What is the input resistance (Rin(source)) of a common-gate
D amplifier?
. 2.82 k
A 23. Referring to this figure, find Z if y = 20
Rs S.
. o os
16. Where do you get the level of gm and rd for an FET transistor? B
.
A
from the dc biasing arrangement
.
C
1 / gm
.
B
from the specification sheet
.
D
none of the above
.
C
from the characteristics
.
C C C
2.05 k a positive temperature coefficient. 4 mS
. . .
D D D
2.15 k all of the above 5 mS
. . .
24. Which of the following is a required condition to simplify the 28. When VGS = 0.5 Vp gm is ________ the maximum value. 31. Which type of FETs can operate with a gate-to-source Q-point
equations for Zo and Av for the self-bias configuration? value of 0 V?
A
one-fourth
A . A
rd 10RD JFET
. .
B
one-half
B . B
rd = RD E-MOSFET
. .
C
three-fourths
C . C
rd 10RD D-MOSFET
. .
D
None of the above 29. MOSFET digital switching is used to produce which digital
.
gates? 32. On which of the following parameters does rd have no or little
impact in a source-follower configuration?
A
inverters
. A
25. The steeper the slope of the ID versus VGS curve, the ________ Zi
.
the level of gm.
B
NOR gates
A . B
less Zo
. .
C
NAND gates
B . C
same Av
. .
D
all of the above
C . D
greater All of the above
. .
B
. 1M
C
. 10 M
D
. 1000 M
C
5 mA.
.
D
2.5 mA.
.
B
common-drain
.
C
common-source
.
D
A all of the above
increase. .
.
B
decrease. A
. 38. What common factor determines the voltage gain and input 1.75 k
.
resistance of a common-gate amplifier?
C
remain the same. A B
. RD 1.81 k
. .
D
distort. B C
. RL 1.92 k
. .
C D
gm . 2.00 k
36. Refer to this figure. If ID = 4 mA, find the value of VGS. .
39. Referring to the figure below, determine the output impedance 41. Referring to this figure, calculate Z if r = 19 k
i d .
for VGS = –3 V at VDS = 5 V.
A
less
.
B
same
.
C
greater
.
A
2.83 mS
.
A
. 2.42 M B
3.00 mS
.
B
. 2.50 M C
3.25 mS
.
C
. 2.53 M D
3.46 mS
.
D
. 2.59 M
D
. A 47. Refer to this figure. The approximate value of Rin is
. 362.52
B
43. Referring to this figure, obtain gm for ID = 6 mA. . 340.5
C
. 420.5
D
. 480.9
B B C
1.5 k . low. 340.5
. . .
C D
. 3.3 k . . 350.0
51. Determine the value for RD if the ac gain is 8.
D
. 48 M .
53. FET amplifiers provide ________.
A
excellent voltage gain
.
48. Which of the following is (are) related to depletion-type
MOSFETs?
B
high input impedance
A .
. can be negative, zero, or positive.
C
low power consumption
B .
gm can be greater or smaller than gm0.
.
D
All of the above
C .
ID can be larger than IDSS. A
. 1.51 k
.
D
All of the above B 54. CMOS digital switches use
. 1.65 k
.
A
n-channel and p-channel D-MOSFETs in series.
.
C
. 1.85 k
49. Refer to this figure. If C2 shorted, Vout would B
n-channel and p-channel D-MOSFETs in parallel.
.
D
. 2.08 k
C
n-channel and p-channel E-MOSFETs in series.
.
A B
increase. . 100 S to 1000 S
.
B C
decrease. . 1000 S to 5000 S
.
C D
remain the same. . 10000 S to 100000 S
.
D
distort.
.
A 56. Calculate g and r if y = 4 mS and y = 15
300.2 m d fs os S.
.
A 4 mS, 66.7 k
50. The input resistance at the gate of a FET is extremely
. A
increase.
.
62. E-MOSFETs are generally used in switching applications
B
4 mS, 15 k because
. B
decrease.
. A
of their very low input capacitance.
C .
. 66.7 k , 4 mS C
remain the same.
. B
of their threshold characteristic (VGS(th)).
D .
None of the above
. D
distort.
. C
of their high-frequency response capabilities.
.
B
VGS(th) 63. For an FET small-signal amplifier, one could go about
.
troubleshooting a circuit by ________.
C A
the switch's power handling viewing the circuit board for poor solder joints
. .
D B
VDS using a dc meter
. .
C
applying a test ac signal
.
58. Input resistance of a common-drain amplifier is
A D
RG || RIN(gate). All of the above
. .
B
RG + RIN(gate).
. A
2.2 k 64. The E-MOSFET is quite popular in ________ applications.
.
C A
RG. digital circuitry
. B .
. 1.2 k
D B
RIN(gate). high-frequency
. C .
. 600 k
C
buffering
D .
59. Refer to this Figure. If Vin was increased in amplitude a little, the . 100 k
signal voltage at the source of Q2 would D
All of the above
.
B
2 common-source amplifiers.
.
C
1 common-gate and 1 common-source amplifier.
.
D
1 common-gate and 1 common-drain amplifier.
.
67. In a common-source amplifier, the purpose of the bypass
capacitor, C2, is to
A
keep the source effectively at ac ground.
.
B
provide a dc path to ground.
.
C
provide coupling to the input.
.
D
provide coupling to the load.
.
B B
–3.56 –6 V
. .
C C
–3.62 10.8 V
. .
D D
–4.02 30 V
. .
66. Referring to this figure, calculate Z if y = 40 70. If ID = IDSS / 2, gm = ________ gmo.
o os S.
A
1
.
A
1.2.
. B
0.707
.
B
2.4.
. C
0.5
.
C
4.4.
.
D
.
8.8. FET AMPLIFIERS FILL IN THE BLANKS
B B
D-type MOSFET
. 3.20 k .
C C
E-type MOSFET
. 3.25 k .
D D
None of the above
. 3.75 k .
2. ________ is the network-input impedance for a JFET fixed-bias
configuration. .
D
5. The ________ does not support Shockley's equation. E-type MOSFET B
. much lower
.
A
JFET
. C
lower
9. .
B ________ configuration(s) has (have) Zo RD.
D-type MOSFET
.
A D
Fixed-bias higher
. .
C
E-type MOSFET
.
B
Self-bias
.
D 13. ________ is the only parameter that is different between
None of the above
. voltage-divider and fixed-bias configurations.
C Voltage-divider
17. The range of output admittance yos for FETs is ________.
A
Zi
. A
. 5 S–10 S 21. The range of input impedance Zi for MOSFETs is ________.
B A
Av 1k –10 k
. B .
. 10 S –50 S
C B
Zo 100 k –1 M
. C .
. 50 S –100 S
D C
None of the above 10 M –100 M
. D .
. 200 S –500 S
D
. 1012 to 1015
14. The ________ controls the ________ of an FET.
18. The ________ configuration has the distinct disadvantage of
A requiring two dc voltage sources.
ID, VGS
.
A 22. The value of gm is at its maximum gm0 at VGS equal to ________
self-bias and zero at VGS equal to ________.
B .
VGS, ID
.
B A
voltage-divider .
C . 0 V,
IG, VDS
.
C
fixed-bias
D . B
IG, ID .
. , 0 V
D
All of the above
.
C
15. Transconductance is the ratio of changes in ________. .
0.5 , 0.3
A 19. A field-effect transistor amplifier provides excellent voltage gain
ID to VGS
. with the added feature of a ________ input impedance.
D
B A .
ID to VDS low 0.3 , 0.5
. .
C B
VGS to IG medium
. . 23. A ________ configuration has a voltage gain less than 1.
C A
D high fixed-bias
VGS to VDS . .
.
D B
None of the above self-bias
. .
16. The ________ configuration has an input impedance, which is
other than RG. C
source-follower
.
A 20. ________ is an undefined quantity in a JFET.
common-source
.
D
A voltage-divider
Ai .
B .
common-gate
.
B
Av
C . 24. ________ is a required step in order to calculate Zo.
common-drain
.
C A
Zi Setting IG equal to zero
. .
D
None of the above
.
D B
Zo Setting Vi equal to zero
. .
C A
Setting ID equal to IDSS
. True
.
D
8. In a class D amplifier, the low-pass filter
None of the above
. B comes directly after the pulse-width
False modulator.
.
A
25. The input and output signals are 180º out of phase in a True
________ configuration. .
A
source-follower 4. Class D amplifier efficiencies can reach
.
practical levels of more than 90%. B
False
.
B
common-gate A
. True
.
C
common-drain
.
B 9. The common-drain configuration has
False extremely high input resistance.
D
voltage-divider
.
.
A
True
.
5. There is no phase inversion between the
FET AMPLIFIERS TRUE OR FALSE B
gate and the drain voltages. False
.
1. In a class D amplifier, the output A
True
transistors are operated in a nonlinear .
mode. 10. The voltage gain of a common-source
B
A False amplifier is found by the product of gm and
True .
. R d.
A
B True
False 6. The common-drain amplifier is also called .
.
a source-follower.
B
A False
True .
2. Generally, higher voltage gains can be .
achieved with bipolar amplifiers than with
FET amplifiers. B
False 11. The common-gate configuration has
.
A extremely high input resistance.
True
. A
True
7. A load resistance connected to the output .
B
False of an amplifier reduces the voltage gain.
. B
A False
True .
.
3. Bypassing a source resistor reduces the
voltage gain. B
False 12. Digital MOSFET switches are used in the
.
sample-and-hold circuit of an analog-to- A
2
digital converter. .
A B
True .
10
.
C
5
B .
False
.
D
20
.
D
1.0
. A
14. The common-source configuration has .
15.8 Hz
C
High-frequency 5. The smaller capacitive elements of the design will determine
15. There is a 180º phase inversion between .
the ________ cutoff frequencies.
the gate and source voltages.
D A
All of the above low
. .
A
True
. B
mid
.
4. Determine the lower cutoff frequency of this network.
B
False C
. .
high
C A
0.1 to 1 nF low
. .
14. For audio systems, the reference level is generally accepted as
B ________.
D mid
0.1 to 1 F .
. A
1 mW
.
C
high
.
B
7. 1W
An amplifier rated at 30-W output is connected to a 5- .
speaker. Calculate the input voltage for the rated output if the
amplifier voltage gain is 20 dB. C
11. Which of the following elements is (are) important in 10 mW
determining the gain of the system in the high-frequency .
A
1.225 mV region?
.
D
A 100 mW
Interelectrode capacitances .
B .
12.25 mV
.
B
C Wiring capacitances
122.5 mV . 15. What is the range of the capacitors Cgs and Cgd?
.
A
C 1 to 10 pF
D Miller effect capacitance .
1.225 V .
.
B
D 1 to 10 nF
All of the above .
.
8. A 3-dB drop in hfe will occur at a frequency defined by C
________. 1 to 10 F
.
A 12. The input power to a device is 10,000 W at 1000 V. The output
. D
power is 500 W, and the output impedance is 100 . Find the 1 to 10 F
.
voltage gain in decibels.
B
. A
–30.01 dB
.
16. For the low-frequency response of a BJT amplifier, the
C maximum gain is where ________ .
1 B
. –20.0 dB
. A
. RB = 0
D
2 C
. –13.01 dB
. B
. RC = 0
D
–3.01 dB
9. . C
An amplifier rated at 30-W output is connected to a 5-
. RE = 0
speaker. Calculate the input power required for full power
output if the power gain is 20 dB.
A 13. By what factor does an audio level change if the power level
3 mW changes from 4 W to 4096 W?
. 17. In the input RC circuit of a single-stage BJT, by how much does
A the base voltage lead the input voltage at the cutoff frequency
B 2 in the low-frequency region?
30 mW .
.
A
About 0º
B .
C 4
300 mW .
.
B
45º
C .
D 6
3W .
.
C
About 90º
D 8 .
D .
None of the above
.
21. What is the ratio of the common logarithm of a number to its
D
natural logarithm? All of the above
.
A
18. What is the normalized gain expressed in dB for the cutoff 0.435
.
frequencies?
A B 25. The ________-frequency response of a transformer-coupled
–3 dB 2 system is calculated primarily by the stray capacitance between
. .
the turns of the primary and secondary windings.
B C A
+3 dB 2.3 low
. . .
C D B
–6 dB 3.2 mid
. . .
D C
–20 dB high
. .
22. Which of the following configurations does (do) not involve the
Miller effect capacitance?
A
19. Which of the low-frequency cutoffs determined by CS, CC, or Common-emitter 26. logea = ________ log10a
.
CE will be the predominant factor in determining the low-
frequency response for the complete system? A
2.3
B .
Common-base
A .
lowest
. B
2.718
C .
Common-collector
B .
middle
. C
e
D .
All of the above
C .
highest
. D
1.414
.
D
None of the above 23. What magnitude voltage gain corresponds to a decibel gain of
.
50?
A 27. In the hybrid or Giacoletto model, which one of the following
31.6238 does rb include?
.
20. Determine the break frequency for this circuit.
A
B Base spreading resistance
316.228 .
.
B
C Base contact
3162.38 .
.
C
D Base bulk
31623.8 .
.
D
All of the above
A .
15.915 Hz
.
24. By what other name(s) are the cutoff frequencies in a frequency
response plot called?
B
159.15 Hz A 28. What is the ratio of the output voltage to the input voltage at the
. Corner frequency
. cutoff frequencies in a normalized frequency response plot?
C A
31.85 Hz B 0.25
. Break frequency .
.
D B
318.5 Hz C Half-power frequency 0.50
. .
C A D
0.707 About 0º 0.25
. . .
D B
1 45º
. .
2. The ________ region produces the maximum voltage gain in a
single-stage BJT or FET amplifier.
C
About 90º
. A
29. Which of the following statements is true for a square-wave low-frequency
.
signal?
D
None of the above
A . B
It is composed of both even and odd harmonics. mid-frequency
. .
B C
It is composed only of odd harmonics. 33. In the ________-frequency region, the capacitive elements of high-frequency
. .
importance are the interelectrode (between terminals)
capacitances internal to the active device and the wiring
C capacitance between the leads of the network. D
It is composed only of even harmonics. None of the above
. .
A
low
D .
The harmonics waveforms are also square waves.
.
B 3. The resistance associated with the 1-mW power level is
mid ________ , chosen because it is the characteristic impedance
.
of audio transmission lines.
30. A change in frequency by a factor of ________ is equivalent to C A
1 decade. high 100
. .
A
2
. B
250
.
34. What is the ratio of the output power to the input power at the
B cutoff frequencies in a normalized frequency response plot?
10
. C
400
A .
0.25
C .
5
. D
600
B .
0.50
D .
20
.
C
0.707 4. The Miller effect is meaningful in the ________ amplifier.
.
A
31. Which of the following capacitors is (are) included in Ci for the D inverting
1 .
high-frequency region of a BJT or FET amplifier? .
A B
noninverting
. Input wiring capacitance .
B
BJT AND FET FREQUENCY RESPONSE FILL IN THE C
inverting/noninverting
. The transition capacitance ( ) .
BLANKS
C D
1. The magnitude of the third harmonic is ________ of the None of the above
. Miller capacitance .
magnitude of the fundamental.
D A
All of the above 1
. .
5. To fix the frequency boundaries of relatively high gain,
________ was chosen to be the gain at the cutoff levels.
B
0.5
. A
0.5Av mid
32. In the input RC circuit of a single-stage BJT, by how much does .
the base voltage lead the input voltage for frequencies much C
larger than the cutoff frequency in the low-frequency region? 0.33
. B 0.707Av mid
. A D
significantly smaller –40 dB
. .
C
Av low
. B
smaller
.
13. A change in frequency by a factor of 2 results in a ________
D
0.5Av high change in the ratio of the normalized gain.
. C
significantly greater
. A
3-dB
.
D
6. Voltage gains of ________ dB or higher should immediately be None of the above
. B
recognized as being quite high. 6-dB
.
A
3
. C
10. With a BJT amplifier in the high-frequency region, the 10-dB
.
capacitance Cbe is the ________ of the parasitic capacitances
B while Cce is the ________.
6
. D
20-dB
A .
smallest, largest
C .
20
.
B
largest, smallest 14. If the parasitic capacitors were the only elements to determine
D .
50 the high cutoff frequency, the ________ frequency would be
.
the determining factor.
C
smallest, medium
. A
lowest
.
7. The decibel gain of a cascaded system is the ________ of the D
decibel gains of each stage. None of the above
. B
highest
A .
sum
.
C
11. In the low-frequency region, the ________ low-frequency cutoff lowest or highest
B .
difference determined by CS, CC, or CE will have the greatest impact on
. the network.
D
None of the above
C A .
product highest
. .
D B
quotient average 15. For the RC-coupled amplifier, the drop in gain at low
. .
frequencies is due to the increasing reactance of ________.
C A
lowest CC
. .
8. The bandwidth ________ in a multistage amplifier compared to
an identical single-stage amplifier. D B
None of the above Cs
. .
A
increases
.
C
CE
B .
decreases 12. For two identical stages in cascade, the drop-off rate in the
. high- and low-frequency regions has increased to ________
per decade. D
All of the above
C .
remains the same A
. –3 dB
.
D
None of the above B 16. The logarithm of a number ________ than 1 is always
. –6 dB
. ________.
A
C greater, negative
–20 dB .
9. .
is ________ than in a common-base configuration.
20. At very high frequencies, the effect of Ci is to ________ the
B total impedance of the parallel combination of R1, R2, R3, and D
less, positive 20-dB
. Ci. .
C A
less, negative increase
. .
24. For any inverting amplifier, the impedance capacitance will be
B ________ by a Miller effect capacitance sensitive to the gain of
D maintain
None of the above . the amplifier and the interelectrode capacitance.
.
A
C unaffected
decrease .
.
17. The ________ in the Fourier series has the same frequency as B
the square wave itself. D increased
None of the above .
.
A
fundamental
. C
decreased
.
B 21. The decibel (dB) is defined such that ________ decibel(s) =
third harmonic
. ________ bel(s). D
None of the above
.
C A
fifth harmonic 1, 10
. .