NPN Silicon AF Transistors BC 337

BC 338

● High current gain

● High collector current
● Low collector-emitter saturation voltage
● Complementary types: BC 327, BC 328 (PNP)
2

3
1

Type Marking Ordering Code Pin Configuration Package1)

1 2 3
BC 337 – Q62702-C313 C B E TO-92
BC 337-16 Q62702-C313-V3
BC 337-25 Q62702-C313-V1
BC 337-40 Q62702-C313-V2
BC 338 Q62702-C314
BC 338-16 Q62702-C314-V1
BC 338-25 Q62702-C314-V2
BC 338-40 Q62702-C314-V3

1) For detailed information see chapter Package Outlines.

Semiconductor Group 1 5.91

 BC 337
BC 338

Maximum Ratings
Parameter Symbol Values
BC 337 BC 338 Unit
Collector-emitter voltage VCE0 45 25 V
Collector-base voltage VCB0 50 30
Emitter-base voltage VEB0 5
Collector current IC 800 mA
Peak collector current ICM 1 A
Base current IB 100 mA
Peak base current IBM 200
Total power dissipation, TC = 66 ˚C Ptot 625 mW
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150

Thermal Resistance

Junction - ambient Rth JA ≤ 200 K/W

Junction - case1) Rth JC ≤ 135

1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.

Semiconductor Group 2
 BC 337
BC 338

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

DC characteristics
Collector-emitter breakdown voltage V(BR)CE0 V
IC = 10 mA
BC 337 45 – –
BC 338 25 – –
Collector-base breakdown voltage V(BR)CB0
IC = 100 µA
BC 337 50 – –
BC 338 30 – –
Emitter-base breakdown voltage V(BR)EB0 5 – –
IE = 10 µA
Collector cutoff current ICB0
VCB = 25 V BC 338 – – 100 nA
VCB = 45 V BC 337 – – 100 nA
VCB = 25 V, TA = 150 ˚C BC 338 – – 10 µA
VCB = 45 V, TA = 150 ˚C BC 337 – – 10 µA

Emitter cutoff current IEB0 – – 100 nA

VEB = 4 V
DC current gain1) hFE –
IC = 100 mA; VCE = 1 V
BC 337/16; BC 338/16 100 160 250
BC 337/25; BC 338/25 160 250 400
BC 337/40; BC 338/40 250 350 630
IC = 300 mA; VCE = 1 V
BC 337/16; BC 338/16 60 – –
BC 337/25; BC 338/25 100 – –
BC 337/40; BC 338/40 170 – –
Collector-emitter saturation voltage1) VCEsat – – 0.7 V
IC = 500 mA; IB = 50 mA
Base-emitter saturation voltage VBEsat – – 2
IC = 500 mA; IB = 50 mA

1) Pulse test: t ≤ 300 µs, D ≤ 2 %.

Semiconductor Group 3
 BC 337
BC 338

Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.

AC characteristics
Transition frequency fT – 170 – MHz
IC = 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance Cobo – 8 – pF
VCB = 10 V, f = 1 MHz
Input capacitance Cibo – 60 –
VEB = 0.5 V, f = 1 MHz

Semiconductor Group 4
 BC 337
BC 338

Total power dissipation Ptot = f (TA; TC) Permissible pulse load RthJA = f (tp)

Collector current IC = f (VBE) Collector cutoff current ICB0 = f (TA)

VCE = 1 V VCB = 45 V

Semiconductor Group 5
 BC 337
BC 338

DC current gain hFE = f (IC) Transition frequency fT = f (IC)

VCE = 1 V f = 20 MHz, TA = 25 ˚C

Collector-emitter saturation voltage Base-emitter saturation voltage

VCEsat = f (IC) VBEsat = f (IC)
hFE = 10 hFE = 10

Semiconductor Group 6
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