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Abstract— Solar cell systems have become popular with the cells, such as thin film solar cells, have been put into practical
gradual improvement in cost and conversion efficiency. As a use in addition to crystalline Si based solar systems. [1] Recently,
recent trend, paint-type solar cells have been proposed. These the efficiency of perovskite based solar cells has improved to
solar cells have several advantages which include: a follow-up over 20%[2], which has attracted significant attention. Painted
curved surface, free-shape and seam-less high design. In general, type solar cells are unique with features which include curved
a solar cell is fabricated based on a series of possible surface conformability, free shape, and high design without
configurations, and the output voltage of the solar module setup seams (Fig. 2, Fig. 3(b)). Generally, when using a solar cell, a
can be up to several tens of volts. In applications which involve series structure is formed into a module with an output voltage
exploiting the free-shape, these devices may not provide sufficient
of tens of volts for ease of use (Fig. 3(a)). However, in the case
current. Moreover, this current may then be interrupted as a
result of the small cell size or partial light blockage due to the
of a painted type, cells are painted directly on an object, and it
series construction. To address these problem, DC-DC converters is considered to be difficult to separate the devices. When
based on the performance of high-design solar cells have been curved surface compliance and free-shape are required, there is
investigated. These components can be boosted to an easy-to-use the possibility that the cell may be limited by the current of the
voltage for practical daily usage. shadow cell or by the cell with the smallest area, when
connected in series. As such the painted solar cell may not be
Keywords— Single Solar Cell; Boost type DC-DC Converter; able to exhibit acceptable performance (Fig. 3(a)). In order to
Start up in low voltage; High boost-up voltage ratio address this problem, the authors have proposed[5] a DC-DC
converter that can boost the low voltage of a single-cell solar
I. INTRODUCTION cell to a voltage that is easy to use and can maximize the
performance of a highly-designed solar cell (Fig. 3(b)).
Solar power generation systems are in widespread use
around the globe (Fig. 1). In recent years, various types of solar
Enlarge
Single DC-DC
Load
Solar Cell With MPPT
0.5V 5V 5V
Low
Voltage Control Power Supply
Charging a smartphone with a PV Start Up Circuit to control
incorporated in a suit Circuit
Fig. 2 Schematic of application of the painted PV Fig. 4 A block diagram of the single solar cell system
L DB SW L T
Do1 Io Do1 Io
T L
Ipv L Co RL Vo Ipv Co RL Vo
4<α<20 0<α<20
In the case of boosting a voltage in the low of 0.5 to 0.7 V Boost ratio α 10 △ 1<α<5 × 0<α<1 ◎
(winding ratio1:4)
○
(winding ratio1:20)
Continuity of
for a single cell solar cell, establishing a voltage to drive the input current
9 ○ continuous × discontinuous ○ continuous × discontinuous
SW:1, SW:1,
Number of SW:1, SW:1,
Di:1, Di:1,
passing elements 8 ◎ ◎ Di:1, ○ Di1,○
Transformer L:1, L:1,
(for efficiency) L:1 L:1
T:1 T:1
Resister to start T
Do Tro Output SW
Diode Transistor Cost 7 ◎ SW:1, Di:1, L:1, C2 ◎ SW:1, Di:1, L:1, C2 ○ SW:2, Di:2, L:1, T:1, C2 ○ SW:2, Di:2, L:1, T:1, C2
Judgment △ × ◎ ○
Iout
Single Solar Cell Rs Ls T Do1
Lo iL
Vin Co RL
Condenser to Load Iin Co RL Vout
Cf Rf store energy
Ld
(control circuit)
Tr
Transistor to Lf vL
switching Do2
Vin Cin
Fig. 6 The low voltage start up circuit PV SW1 SW2
Do Tro - + Do Tro
Fig. 8 The boost type DC-DC converter circuit.
Rs Ls Rs Ls
Vin≧0.5V + Do1
Lo Co RL Lo Co RL Io Do1 Io
Vin - T T
+ -
+ - Ipv Ld Co1 RL1 Vo1 Ipv Co1 RL1 Vo1
Ld
OFF Cf Rf -
Cf Rf Tr
Tr Lf Lf Do2 Do2
+ Vpv Ci Vpv
SW1:ON Ci
Fig. 7 Operating modes of the low voltage start up circuit Fig. 9 Operating modes of the main circuit
1947
The circuit diagram of the boost type converter with a high waveforms before and after the output Pch FET Tro. This
frequency transformer is shown in Fig. 8. Since it is necessary represents the voltage before the FET output starts to gradually
to secure a current path of the DC inductor current iL, there is rise, beginning at the circuit starting time, until a certain
no timing whereby both switches SW1 and SW2 are OFF (Fig. threshold voltage is achieved; the FET turns on and the voltage
9). Therefore, it is necessary to control the switching timing is outputted. As a result, start-up failure due to an inrush
within 0.5 <Duty <1. current of the control circuit connected to the subsequent stage
is suppressed.
III. FUNDAMENTAL EXPERIMENT III-II Target solar cell and load
III-I The low voltage start up circuit The target solar cell is assumed to be applied to wearable
The low voltage start up circuit is shown in Fig. 6 and its devices and the like. Assuming that the area is 100,000 mm2
operation is confirmed. The parameters are shown in Table 2 (one side is about 300 mm) and the photoelectric conversion
and the waveforms of each component is shown in Fig. 10. Fig. efficiency is 10%, the solar cell output when the solar radiation
10(a) shows the waveform of the collector-emitter voltage VCE intensity is 1 kW/m2 is set to PPV = 10 W. When the solar cell
of the transistor and the base potential VBE. Oscillation occurs Table 3 The main circuit configuration
at a frequency of 410 kHz, the duty cycle = 81%, and an output
Components SPECs
voltage VCO = 5 V is obtained. Fig. 10(b) shows the voltage PV Kikusui PWR400L Vin:0~80V,
Table 2 Circuit configuration of the low voltage start up circuit DC Source Iin:0~25A,
RL Kikusui PLZ164WA Vout:0~150V
Parts SPECs Electronic Load Iout:0~33A
Tr 2n4923 Ci, Co Electrolytic capacitor 100μF
Rs 470Ω DC Inductor Ld Core:TDK PC40 Ni-Zn 10μH
Cf 5μF Transformer Core TDK PC40 Ni-Zn winding ratio 1:10
Rf 10Ω SW1, SW2 ON Semiconductor RDS(ON)<=0.7mΩ
Ls 5Turn NVMFS5C404N
Lf 10Turn Do1, Do2 Sanken VF=0.55V
FMEN-2208
Lo 30Turn
SWf 100kHz
Co 100μF
Voltage [2V/div.]
Do D1FH3 6
Tro REP15P05 4
2
Experimental DATA
8 Vco 2.0 GND
Experimental DATA Vcar Vsw1 Vsw2 Vdy*
1.5 -2 0 8 16 24 32 40
6 Vce
Vbe, Vo[V]
4 1.0
Fig. 11 Waveform of the boost type push-pull PWM signal
0.5 10 25
2 Vbe 8 200kHz 20
6 15
4 iL: 5A/div. 10
-2 -0.5 2 vL:2V/div. 5
vL:GND iL :GND
-2 200kHz -5
-4 -1.0
-4 -10
0 1 2 43 5 6 7 8 9 10 -15
t[μsec.] -6
-8 Experimental DATA 2μs/div. -20
(a) Output Voltage vo and Transistor Voltage vbe, vce
0 4 8 12 16 20
Vin[200mV/div.], Vco, Vo[2V/div.]
Vo
20 100kHz 10V/div. 15
2
10 10
vSW1:GND 5
Experimental DATA -10 100kHz iSW1 :GND
28 32 -20 2μs/div. -5
0 8 12 24 ON OFF ON
t[sec.] 0 4 8 16 12 20
(b) Operation of the Output Transistor Tro Time t[μsec.]
(b) Switch SW1 Voltage and Current
Fig. 10 Operating modes of the low voltage start up circuit Fig. 12 Waveform of the DC inductor and semiconductor switches
1948
voltage VPV = 0.5 V, the current IPV = 20 A is obtained. Also, the region of 0.7 V<Vin<1.3 V, almost no change in efficiency
the load is assumed to be a 12 V battery. In this situation, a DC is seen. In the region where Vin>1.3, the efficiency gradually
power supply with suitable specifications was used for stable increases, with peaks at Vin=1.8 V, η=64.4%. As Vin is further
measurement of the electric performance. increased, the efficiency gradually decreased, with η =61.5% at
Vin=2.0 V. Fig. 13(b) shows the power conversion efficiency η
III-III Boost operation with input voltage Vin=1.5 V and output voltage Vout=12 V,
To confirm the operation of the main circuit, an experiment versus the output power Pout. When the output power Pout=2.6
was conducted. Various parameters are shown in Table 3. The W, the power conversion efficiency η is 44%, and the
gate pulses Vsw1 and Vsw2 are shown in Fig. 11. Fig. 13 efficiency increases as the output power increases. A peak is
shows the power that can be output when the output power observed with η=65% at Pout=7 W, and the output power has a
Vout is fixed at 12 V. When the input voltage Vin=0.5 V, the high efficiency and starts to decrease, with η=53% at Pout=10
output power Pout is obtained as 1.5 W, and a sufficient output W.
is not obtained from the single solar cell. As the input voltage
Vin is increased, the output Pout also increases, and in the range IV. MODELING OF INPUT RESISTANCE OF MAIN CIRCUIT
of Vin> 1.4 V, an output of Pout=10 W is obtained. The
waveforms of the DC inductor voltage vL and current iL when IV-I Modeling of input resistance
Vin=1.5 V, Vout=12 V and Pout=10 W are shown in Fig. 12(a). Similar to this study, when attempting to obtain a high
The drain-source voltage vSW1 and current iSW1 of the switch output for a circuit with an input voltage as low as 0.5 V, the
SW1 are shown in Fig. 12(b). As shown in Fig. 12, while the input resistance becomes a problem. According to the
switch voltage and current are at 100 kHz, the DC inductor experimental results of a fabricated test circuit, when the input
voltage and the current are at 200 kHz, and the currents of voltage Vin=0.5 V and Vout=12 V, the input current Iin is up to
switches 1 and 2 are summed. Also, at the moment when the 7 A and the input power Pin is up to 3.5 W. Further, the output
conductor switch turns off, a large surge voltage is generated in power Pout at this time is 1.5 W, and the efficiency is slightly
both the switch and the DC inductor, whereby the DC inductor lower than 50%. In order to consider the operation of such a
current drops sharply. Subsequently, the convergence of the low voltage input DC-DC converter, we model the circuit in
surge voltage and the DC inductor current become constant. the steady state of the converter, as shown in Fig. 15. In the
III-IV Power conversion efficiency DC-DC converter with a low input voltage (Vin), a large current
Iin flows through the input stage, so the loss due to the input
Fig. 13 (a) shows the power conversion efficiency η when resistance Rin is large. The power Pin-a which can be input to
the output voltage Vout=12 V is fixed under the same conditions the actual DC-DC converter is given by Equation (1).
as in Section III-III, versus the input voltage Vin. In the vicinity
of Vin=0.1 V, η=65%; the efficiency decreases as Vin is
increased, such that η=33% in the vicinity of Vin=0.7 V, and in 30 6 0.6
Iin[A] Experimental DATA Simulation 20A,5.2W
20 4 0.4
Duty100%
Vin:Parameter, Vout=12V Const. 15
12 3 0.3
100.0% 12 10
2 At20A, Available Input Power=5.2W 0.2
1.4V,10W 5 Circuit inside Resistance is 12mΩ
Output Power Pout[W]
0.4
Pout[W] 0.3 Static 12 10.4 5.2 -
20A,0.26V
0.0% 0 0.2 Simulation With Switching 35.6 3.5 1.76 1.5
0 0.5 1 1.5 2 0.1
At 20A, Actual Input Voltage=0.26V
0
Input Voltage Vin[V] 0 5 10 15 20 25
(a) The Relationship between Input voltage, Output power and Efficiency Current[A]
(b) Calculated value of the Actual Input Voltage
(In the case of Circuit inside resistance=12mΩ)
Previous of the
2.6W,44% 10W,53% Pin Later of the
60.0 Transformer Pin-a
Iin Rin Transformer Pout
40.0
Efficiency[%]
20.0 35.6mΩ
Vin Vin-a Vout
0.0
0 2 4 6 8 10 12
Pin=3.5W Pin-a=1.76W Pout=1.5W
Putput power Pout[W]
(b) The Relationship between Output power and Efficiency
Fig. 13 Static characteristics of the main circuit Fig. 15 A input model of the boost type DC-DC Converter
1949
Pin-a=-Rin 2 +Vin・Iin ・・・・・・・・・・・・・・・(1) and finally the combination effect of these changes is discussed.
When the input power Pin of the prototype circuit is Pin=3.5 W, V-II Reduction of element resistance
the input resistance is Rin=35.6 mΩ, and the maximum real The relationship between the actual input power Pin-a and
input power Pin-aMAX=1.76 W, which is indicated by equation the efficiency η of the input stage when the input resistance Rin
(2). is used as a parameter is shown in equation (3).
Vin 2 =1-
R in
Pin-a MAX ・・・・・・・・・・・・・・(2) V in
Iin
4・Rin 2
V in V in 4・ P i n - a
The relationship between the input current Iin and the actual R in
±
R in
R in ・・・・・・・・・・・(3)
Iin =
input power Pin-a is shown in Fig. 16 2
A graph of the actual input power Pin-a versus the input
2 Vin 2 efficiency η when the input resistance Rin is reduced, is shown
1.76W Pin-a MAX
in Fig. 17(b). With the input resistance Rin<5 mΩ, electric
Actual Input Ppower
1.5 4・Rin
Simulation power of 10 W or more can be obtained and the efficiency is
Pin-a[W]
1 about 70%.
0.5
V-III Main circuit parallelization
2
Pin-a=-Rin・Iin +Vin・Iin By parallelizing the primary side across the transformer of
0
the main circuit, the input resistance Rin can be reduced, and by
0 5 10 15
serializing the secondary side of the transformer, this
Input Cirrent Iin[A]
contributes to a high voltage output. The main circuit of “m”
Fig. 16 Relation between input current and actual input power parallel input and “n” serial output type is shown in Fig. 18.
Vin 2 2
Vin・ Para
V. EXAMINATION OF HIGH POWER AND HIGH EFFICIENCY Pin-a MAX = =
4・Rin 4・Rin1 ・・・・・・・・・(4)
V-I Resistance reduction of main circuit Rin1
Rin=
Reducing the input resistance Rin leads to a high power Para
input and high efficiency. There are two directions of how to assuming that the input resistance of the main circuit is Rin1
reduce the input resistance Rin. One is reducing resistance of where the parallel number of the primary side is Para. The
the circuit elements itself for example switching devices, DC actual input power Pin-aMAX that can be input is as shown in
inductors and transformers etc. The other is multiply equation (4).
parallelizing the circuit without changing the elements. In this
study, firstly, the effect of lowering the resistance of the The relationship between the number of primary side Para
element is discussed, secondly, the parallelization is performed, and feasible real input power Pin-aMAX is shown in Fig. 19. In
this case, by substituting the second line of equation (4) into
equation (3), a relational expression between the real input
2.5 100% 100%
35.6mΩ power when the primary side of the main circuit is parallel and
Input Efficiency ηin[%]
2 80% 30mΩ
80%
the efficiency η of the input stage is obtained. A graph of the
Losses[W]
1950
efficiency when the input resistance Rin1 of one main circuit is 12
reduced to 7.5 mΩ and further parallelized. By reducing the 10
Efficiency η[%]
50.0
100%
40.0
Input Efficiency ηin[%]
1para.
95% 30.0
2para. Pout-Efficiency
20.0
90% 3para. Pin-Efficiency
10.0
85% 4para. 0.0
0 2 4
80% When the Input Resistance of one Output Power Pout[W]
75% circuit Rin1 is reduced to 7.5mΩ (b) Power VS Efficiency
Input Voltage
14 1.4 Corporation-”, IEEJ Magazine, Vol.136 No.5, pp.266-269, 2016
Vout 12V Output Current
12 1.2 [2] Best Reserch-Cell Efficiencies, National Renewable Energy Laboratory,
10 Iin 11.3A 1 Rev. 03-09-2016
Vin DC0.5V+ Ripple1.2Vp-p800MHz [3] SII very low voltage charge pump IC S882Z Datasheet
8 0.8
6 0.6 [4] D. Yoshitomi, K. Hirachi and K. Fujisawa, “Control of Surge Voltage
4 0.4 for Current Mode DC/DC Converter”, IEEJ SPC11 25-48.50-54 pp.89-
94, 2011-1
2 Iout 280mA
0.2
1.25μs/div. [5] A. Nakajima, S. Masukawa, “A study of the Boost type DC-DC
0 0
Converter for the Single Solar Cell” IEEJ industrial application section
0 1.25 2.5 3.75 5 6.25 7.5 8.75 10 meeting 1-45 Aug. 30th, 2016
time[μsec.]
1951