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Instructions:
(1) All questions are compulsory.
(2) Illustrate your answers with neat sketches wherever necessary.
(3) Figures to the right indicate full marks.
(4) Assume suitable data if necessary.
(5) Preferably, write the answers in sequential order
Fig.no.1
Instructions:
(1) All questions are compulsory.
(2) Illustrate your answers with neat sketches wherever necessary.
(3) Figures to the right indicate full marks.
(4) Assume suitable data if necessary.
(5) Preferably, write the answers in sequential order.
Instructions:
(1) All questions are compulsory.
(2) Illustrate your answers with neat sketches wherever necessary.
(3) Figures to the right indicate full marks.
(4) Assume suitable data if necessary.
(5) Preferably, write the answers in sequential order.
Instru
uctions:
(1) Alll questions are compullsory.
(2) Illuustrate yourr answers with
w neat skeetches wherrever necesssary.
(3) Figgures to thee right indicate full marrks.
(4) Asssume suitab ble data if necessary.
n
(5) Preferably, write the answ wers in sequuential ordeer.
1]
2]
bb) State any
y two appliccation of FE ET.
cc) State typ
pe of transisstor configuuration for obtaining
o higghest currennt gain.
dd) Sketch thhe symbol ofo P-Channeel and N-Chhannel Enhaancement tyype MOSFE ET.
ee) State any
y two limitaations of Zeener diode reegulator.
ff) Define: Load
L regulaation and Liine regulatioon.
gg) Identify the type of diode for thhe given V-I characterristics show wn in figure 1:
Figure 1
Q.2) A
Attempt an ny THREE of the folloowing. 122 Marks
a) Sketch the block diaggram of Reg gulated DC
C power suppply, explaiin working of each
block with input and output
o waveforms.
b) Sketch fixeed bias and self
s bias BJT
B biasing circuit.
c) Differentiatte Zener brreakdown annd Avalanche breakdow
wn on basiss of:
1. Definittion
2. Breakddown characteristics
d) Explain thhe thermal ruunaway phhenomenon for BJT
1
Figure 2
Instru
uctions:
1. All questioons are commpulsory
2. Illustrate your
y answerrs with neatt sketches wherever
w neccessary
3. Figures to the right inndicate full marks
m
4. Assume su uitable data if necessaryy
5. Preferablyy, write the answers
a in sequential
s o
order
c) Expplain the wo
orking princciple of LED
D with neat diagram
d) Com
mpare Half wave rectiffier and Cen
ntre tapped full
f wave reectifier on thhe basis of
folloowing param
meter:
3
e) Describe the working of Positive Clamper with circuit diagram and waveforms.
f) Explain the energy band diagram for conductors, insulator, and semiconductors.
Instru
uctions:
1. All questioons are commpulsory
2. Illustrate your
y answerrs with neatt sketches wherever
w neccessary
3. Figures to the right inndicate full marks
m
4. Assume su uitable data if necessaryy
5. Preferablyy, write the answers
a in sequential
s o
order
Figurre 1
d) Skketch the circcuit diagram
m of fixed bias.
b
e) Ex
xplain workiing of transiistorized shhunt voltagee regulator with
w diagram
m.
f) Draw the sym
mbols of :p channel
c MO
OSFET and n channel MOSFET
M
Q.2 Atttempt anyy THREE. ( Marks))
(12
a) Idenntify the cirrcuit given in
i figure 2 and
a explain its workingg.
Figurre 2
b) Expplain workinng of n-channnel JFET with
w diagram
m.
Figure 3
d) Draw the output characteristics of CE configuration , label its different region.
e) Identify circuit given in figure 4 and draw input and output waveforms for
following circuits:
Figure 4
f. Compare CB with CE, configuration of transistor on the basis of:
i. Input current,
ii. output current,
iii. Application
iv. Output voltage
Instructions:
1. All Questions are Compulsory.
2. Answer each next main Question on a new page.
3. Illustrate your answers with neat sketches wherever necessary.
4. Non Programmable pocket calculator is allowed.
5. Programmable pocket calculator is not allowed.
6. Figures to the right indicate full marks.
7. Mobile Phone, Pager and any other Electronic Communication devices are not
permissible in Examination Hall.
c) Find if y = e ∙ tan
d) Evaluate e dx
e) Evaluate : tan x dx
f) Find the area bounded by the curve y = x, X-axis & the ordinates x = 0, x = 2.
1
Sample output to test PDF Combine only
Q.2 Attempt any THREE of the following 12 Marks
c) An electrical pole wire near a factory hangs in the form of a curve y = log(sin x).
π
Find the radius of curvature at x =
4
d) If I and I be the currents and R and R be the two resistances in parallel to
b) Find if y = x + (sin x)
c) If y = e find
d) Evaluate dx
a) Evaluate
√
b) Evaluate:
c) Evaluate x sin x dx
d) Evaluate dx
( )
2
Sample output to test PDF Combine only
/
e) Evaluate: dx
dy
i) Find the order & degree of the differential equation =
dx
i) Express in x + i y form
ii) Find L{ e t }
4s + 5
b) Find L 2
s−1 ∙ s+2
+ = ; q(0)=0
3
Sample output to test PDF Combine only
Scheme – I
Sample Test Paper - I
(40% of 5-Unit curriculum and 50% of 6-Unit curriculum)
Instructions:
1. All Questions are Compulsory.
6. Mobile Phone, Pager and any other Electronic Communication devices are not permissible
in Examination Hall.
b) State with proof whether the function f(x) = x − 3x + sin x is even or odd.
c) Find if y = (x − 7x + 3) ∙ (x − 1)
f) Evaluate : e dx
4
Sample output to test PDF Combine only
Q.2 Attempt any THREE of the following 12 Marks
a) Find if x + y + xy − y = 0 at (1,2)
b) Find the equation of tangent & normal to the curve x2 + 3 + y2 = 5 at the point
(1, 1).
c) Find the values of x for which the function is maximum and minimum if
15 x2
y=x − + 18 x .
2
d) Evaluate : − xa + 5X + dx
√
5
Sample output to test PDF Combine only
Scheme – I
Instructions:
1. All Questions are Compulsory.
2. Answer each next main Question on a new page.
3. Illustrate your answers with neat sketches wherever necessary.
4. Non Programmable pocket calculator is allowed.
5. Figures to the right indicate full marks.
6. Mobile Phone, Pager and any other Electronic Communication devices are not permissible
in Examination Hall.
a) Evaluate: dx
b) Evaluate : dx
( )( )
dx
c) Evaluate:
d) Find the area bounded by the curve y = x, X-axis & the ordinates x = 0, x = 2.
dy
e) Find the order & degree of the differential equation = y+
6
Sample output to test PDF Combine only
Q.2 Attempt any THREE of the following. 12 Marks
a) Evaluate: x ∙ sin 2 dx
dy
b) Solve: cos x
dx
+ y = tan x
+ = ; q(0) = 0
7
Sample output to test PDF Combine only
Scheme – I
Sample Question Paper
Instructions:
(1) All questions are compulsory.
(2) Illustrate your answers with neat sketches wherever necessary.
(3) Figures to the right indicate full marks.
(4) Assume suitable data if necessary.
(5) Preferably, write the answers in sequential order.
Instructions:
(1) All questions are compulsory.
(2) Illustrate your answers with neat sketches wherever necessary.
(3) Figures to the right indicate full marks.
(4) Assume suitable data if necessary.
(5) Preferably, write the answers in sequential order.
Instructions:
(1) All questions are compulsory.
(2) Illustrate your answers with neat sketches wherever necessary.
(3) Figures to the right indicate full marks.
(4) Assume suitable data if necessary.
(5) Preferably, write the answers in sequential order.
P.T.O.
––––––––––––––
Marks
P.T.O.
Marks
(f) ‘Pentavalent impurity materials are called as Donor impurity.’ Justify your
answer.
[1 of 4] P.T.O.
(i) Temperature
(ii) Alloying
(c) Describe the effect on the capacitance of the dielectric material on the basis of
factors polarizability and permittivity.
(c) Sketch energy band diagram of conducting and insulating material and label it
well.
(i) Electro-textile
(ii) Textile-antenna
(c) Describe with sketch B-H curve. State effect of change in temperature on area
of B-H curve.
(i) Mica
(iii) Rubber
(iv) Polymer
(a) The resistivity of pure copper is 1.56 -cm. An alloy of copper containing 1
atomic percent nickel has a resistivity of 2.81 -cm. An alloy of copper
containing 3 atomic percent silver has a resistivity of 1.98 -cm. Calculate
the resistivity of copper alloy containing 2 atomic percent nickel and 2 atomic
percent silver.
P.T.O.
(i) Platinum
(ii) Iron
(iii) Glass
(v) Quartz
(b) Explain hysteresis loss and eddy current loss of magnetic material.
(c) Suggest two passive materials used for substrate, metal and capacitance of
semiconductor device fabrication. State their two functions.
_______________
Marks
e) Evaluate : y sin 2x dx
2
log x dx
a) Evaluate : y x (2 + log x) (3 + log x)
b) Evaluate : y 3 - dx
2 sin x
-1
x sin x
c) Evaluate : y dx
1 - x2
3s + 1
b) Find L 1 * 4
-
(s - 1) (s2 + 1)
c) Solve the differential equation using Laplace transform.
di
L + R i = V, i (o) = 0
dt
Marks
P.T.O.
Fig. No. 1
c) Write any four advantages of 3 f system over 1 f system.
d) Draw schematic of following motors. Give two applications of
each.
(i) DC shunt
(ii) DC series
P.T.O.
Fig. No. 2
b) A 3f balanced load contains R = 12W and XC= 15W in each
phase. It is connected in star across a 230V, 50Hz, 3f AC.
Calculate -
(i) Vph
(ii) Zph
(iii) Iph
(iv) IL
(v) pf
(vi) P
c) Draw a practical set up to find voltage and current ratio on
a 230/115 V, 1KVA, 1f 50Hz transformer. Also write reading
of each meter.
Marks
P.T.O.
P.T.O.
Marks
1. Attempt any FIVE of the following : 10
(a) List any four relational operators with their use.
(b) Give syntax of switch-case statement.
(c) Give syntax of for loop.
(d) State any two differences between call by value and call by reference.
(e) Define pointer and state any two uses of pointer.
(f) State the use of , & symbols used in pointers.
(g) Define structure.
Marks
1. Attempt any FIVE of the following : 5 × 2 = 10
(a) Define Superconductivity.
(b) Give any two properties of polymers.
(c) Give the classification of magnetic materials.
(d) Define intrinsic and extrinsic semiconductor.
(e) List any two applications of thermionic emission.
(f) Draw energy level diagram of conductor and insulator.
(g) State any four applications of micrometers.
Marks
P.T.O.
a) Evaluate # x tan-1 x dx
b) Evaluate # 4 + 5dxcos x
2
c) Evaluate # (x - 1)2(xx ++25) (x + 3) dx
d) Evaluate # dx
16 - 6x - x2
r/2
e) Evaluate # 1 +dxcot x
0
2s2 - 4
b) Find L-1 ' 1
(s + 1) (s - 2) (s - 3)
dx + = -t
c) Solve using Laplace transform 2x e given
dt
that x(0) = 2
Marks
(a) State materials used for LED’s to emit different colour light.
(b) Sketch the symbol of P-channel and n-channel depletion type MOSFET.
(c) List any two BJT biasing circuits with respect to operating point.
(f) Define line regulation. State the formula for its regulation.
(g) State cut in voltage value of diode for silicon and germanium.
[1 of 4] P.T.O.
(a) Describe experimental set-up for operation of P-N junction diode in forward
bias. Draw its characteristics.
(b) Define alpha and beta of a transistor and state the relation between them.
(c) Explain basic block diagram of regulated DC power supply, draw its input and
output waveforms.
(a) Describe circuit diagram of bridge rectifier, draw its input and output
waveforms.
(b) Explain the working of positive clamper with proper circuit diagram and draw
the waveforms at input & output of clamper.
(c) A JFET has IDSS = 10 mA, VP = –5 volts, gmo = 2 ms. Calculate the trans-
conductance and drain current of the JFET for VGS = –2.5 volts.
(d) Draw the circuit diagram for transistor series regulator and explain functions
of each component.
(a) State the values of following parameters for half wave and full wave rectifiers :
(c) Draw the input and output characteristics of CE configuration with proper
labelling of various regions.
(d) Draw the constructional details of n-channel MOSFET. State its working
principle.
(a) Explain drain characteristics of JFET with ohmic region, saturation region, cut
off region and break down region.
(b) Draw circuit diagram and input and output waveforms of full wave rectifier
connected with filter.
(a) Show constructional details of LED. Give any two applications of LED.
(b) Describe the working of single stage CE amplifier with neat circuit diagram.
(ii) Function
(iii) Application
(iv) Configuration
_______________
P.T.O.
Marks
(f) State the impurities for obtaining p-type and n-type semiconductor from
(g) Give the material composition for obtaining RED and yellow colour LED.
[1 of 4] P.T.O.
(b) Describe the concept of piezo electricity and state its applications.
(a) State the materials used for fabrication of photo diode along with its
justification.
(b) Describe the process of photo emission. State the application of photo
(ii) Glass
(iii) Mica
(c) Describe dielectric strength and dielectric constant with respect to dielectric
materials.
(d) Explain the concept of anti ferro magnetism and state its significance.
(a) State the different modes of electron emission in metal. Explain any two
modes of emission.
(b) Define magnetic permeability. State and explain the factors affecting
(c) Describe the concept of ferro electricity. Explain the application of ferro
electric material.
magnetostriction.
(c) State any four materials used in fabrication of semiconductor device and
_______________
P.T.O.
Marks
P.T.O.
Marks
1. Attempt any FIVE of the following : 10
(i) (ii)
[1 of 4] P.T.O.
(b) Explain with a neat circuit diagram of voltage divider bias method for biasing
a transistor.
(c) Draw the block diagram of DC power supply. Explain the function of each
block.
(b) State the values of following parameters with reference to full wave rectifier :
(d) Determine output voltage Vo, load current IL, zener current IZ & power
(c) Find the Q point values for the following circuit. Assume VBE = 0.7 V &
= 60
(i) Symbol
(iv) Application
(e) Describe the working of zener diode as a voltage regulator with reverse
P.T.O.
(a) With neat circuit diagram and mathematical expressions, explain the self
biasing used in FET.
(b) Identify the following circuit shown in Fig. No. 1 and draw input and output
waveforms
Fig. 1
(a) Draw the characteristics of LED and write advantages, disadvantages and
application of it. (each two points)
(b) Draw circuit and describe working of full wave rectifier using center tapped
transformer with waveforms.
_______________
22218
11819
3 Hours / 70 Marks Seat No.
Marks
P.T.O.
___________________
Marks
c) Find dy if y = a x + x a + a a + x
dx
d) Evaluate # 1 dx
x2 + 4
e) Evaluate # x $ e x dx
f) If z1 = 4 - 5i and z2 = 3 + 7i find z1 + z2 .
P.T.O.
b) Find dy if x = 1 and y = 1 - 1
dx t t
c) A bullet is fired into a mud bank and penetrates (120t - 3600t2)m.
in ‘t’ sec. after impact. Calculate maximum depth of penetration.
b) Find dy if y = sec-1 = 1
G
dx 3
4x - 3x
x y dy (log y) 2
c) If y = e prove that dx =
log y - 1
` x - 1je x
d) Evaluate # x 2 . sin 2 (e x x )
dx
# dx
a) Evaluate
4 cos 2 x + 9 sin 2 x
log x
b) Evaluate # dx
x 82 + log xB83 + log xB
5
x
c) Evaluate # 7-x + x
dx
2
d) Evaluate # x $ tan-1 x $ dx
# x
e) Evaluate dx
(x + 1) (x + 2)
(i) Solve `1 + x2 j dy - `1 + y 2 j dx = 0
dy
(ii) Solve dx
+ y cot x = cos x
3 3
a) If ~1 = 21 + i 2 and ~2 = 21 - i 2
- -
show that ~1 2 = ~2
b) Find L :e3 t $ `t 2 + t jD
Marks
P.T.O.
Marks
P.T.O.
d) Evaluate # dx
4 + 5 cos x
# 2x2 + 5
c) Evaluate dx
(x - 1) (x + 2) (x + 3)
d) Evaluate # x2 . e3x dx
5
5- x
e) Evalute # x + 5- x
dx
o
Marks
P.T.O.
Marks
[1 of 2] P.T.O.
Marks