StrongIRFET™

IRFP7530PbF
Application HEXFET® Power MOSFET
 Brushed Motor drive applications
 BLDC Motor drive applications   D VDSS 60V
Battery powered circuits RDS(on) typ. 1.65m
 Half-bridge and full-bridge topologies
 Synchronous rectifier applications G max 2.00m
 Resonant mode power supplies ID (Silicon Limited) 281A
S
 OR-ing and redundant power switches
ID (Package Limited) 195A
 DC/DC and AC/DC converters
 DC/AC Inverters

Benefits
S
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness GD
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
TO-247
Lead-Free, RoHS Compliant
IRFP7530PbF

G D S
Gate Drain Source

Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRFP7530PbF TO-247 Tube 25 IRFP7530PbF

7 300
RDS(on), Drain-to -Source On Resistance (m)

ID = 100A
6 250 Limited by package
ID, Drain Current (A)

5 200

4 150
TJ = 125°C
3 100

TJ = 25°C
2 50

1 0
2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)

Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature

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IRFP7530PbF
Absolute Maximum Rating
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 281
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 199
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195
IDM Pulsed Drain Current  760
PD @TC = 25°C Maximum Power Dissipation 341 W
Linear Derating Factor 2.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
TJ Operating Junction and
-55 to + 175  
TSTG Storage Temperature Range °C  
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)  
Avalanche Characteristics 
EAS (Thermally limited) Single Pulse Avalanche Energy  557
mJ
EAS (Thermally limited) Single Pulse Avalanche Energy  1102
IAR Avalanche Current  A
See Fig 15, 16, 23a, 23b
EAR Repetitive Avalanche Energy  mJ
Thermal Resistance  
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case  ––– 0.44
RCS Case-to-Sink, Flat Greased Surface 0.24 ––– °C/W  
RJA Junction-to-Ambient  ––– 40
Static @ TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 47 ––– mV/°C Reference to 25°C, ID = 1mA 
RDS(on) Static Drain-to-Source On-Resistance ––– 1.65 2.00 VGS = 10V, ID = 100A 
m
––– 2.10 ––– VGS = 6.0V, ID = 50A 
VGS(th) Gate Threshold Voltage 2.1 ––– 3.7 V VDS = VGS, ID = 250µA
––– ––– 1.0 VDS =60 V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 150 VDS =60V,VGS = 0V,TJ =125°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Gate Resistance ––– 2.1 ––– 

Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 111µH, RG = 50, IAS = 100A, VGS =10V.
ISD  100A, di/dt  1338A/µs, VDD  V(BR)DSS, TJ 175°C.
Pulse width  400µs; duty cycle  2%.
 Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
 Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
 R is measured at TJ approximately 90°C.
 Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 47A, VGS =10V.

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IRFP7530PbF

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 242 ––– ––– S VDS = 10V, ID =100A
Qg Total Gate Charge ––– 274 411 ID = 100A
Qgs Gate-to-Source Charge ––– 64 ––– VDS = 30V
nC  
Qgd Gate-to-Drain Charge ––– 83 ––– VGS = 10V
Qsync Total Gate Charge Sync. (Qg– Qgd) ––– 191 –––
td(on) Turn-On Delay Time ––– 52 ––– VDD = 30V
tr Rise Time ––– 141 ––– ID = 100A
ns
td(off) Turn-Off Delay Time ––– 172 ––– RG= 2.7
tf Fall Time ––– 104 ––– VGS = 10V
Ciss Input Capacitance ––– 13703 ––– VGS = 0V
Coss Output Capacitance ––– 1266 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 806 ––– ƒ = 1.0MHz, See Fig.7
pF  
Effective Output Capacitance
Coss eff.(ER) ––– 1267 ––– VGS = 0V, VDS = 0V to 48V
(Energy Related)
Coss eff.(TR) Output Capacitance (Time Related) ––– 1630 ––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics  
Symbol Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol D

IS ––– ––– 281

(Body Diode) showing the
A G
Pulsed Source Current integral reverse
ISM ––– ––– 760
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C,IS = 100A,VGS = 0V 

dv/dt Peak Diode Recovery dv/dt ––– 8.1 ––– V/ns TJ = 175°C,IS =100A,VDS = 60V
––– 51 ––– TJ = 25°C VDD = 51V
trr Reverse Recovery Time ns
––– 54 ––– TJ = 125°C IF = 100A,
––– 86 ––– TJ = 25°C di/dt = 100A/µs 
Qrr Reverse Recovery Charge nC
––– 102 ––– TJ = 125°C  
IRRM Reverse Recovery Current ––– 2.9 ––– A TJ = 25°C 

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IRFP7530PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

4.5V
4.5V 100

10

60µs PULSE WIDTH

60µs PULSE WIDTH Tj = 175°C
Tj = 25°C
1 10
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 3. Typical Output Characteristics Fig 4. Typical Output Characteristics

1000 2.4

RDS(on) , Drain-to-Source On Resistance

ID = 100A
VGS = 10V
ID, Drain-to-Source Current(A)

2.0
100

(Normalized)
TJ = 175°C TJ = 25°C 1.6
10

1.2

1
0.8
VDS = 25V
60µs PULSE WIDTH
0.1 0.4
2 3 4 5 6 7 -60 -20 20 60 100 140 180
VGS, Gate-to-Source Voltage (V) TJ , Junction Temperature (°C)

Fig 5. Typical Transfer Characteristics Fig 6. Normalized On-Resistance vs. Temperature

14.0
1000000
VGS = 0V, f = 1 MHZ ID = 100A
Ciss = Cgs + Cgd, Cds SHORTED 12.0
VGS, Gate-to-Source Voltage (V)

Crss = Cgd VDS = 48V

Coss = Cds + Cgd VDS = 30V
100000 10.0
VDS= 12V
C, Capacitance (pF)

8.0
Ciss
10000
6.0
Coss
Crss 4.0
1000
2.0

0.0
100
0 50 100 150 200 250 300 350
0.1 1 10 100
QG, Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Gate-to-Source Voltage
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IRFP7530PbF
1000
1000

ID, Drain-to-Source Current (A)

100µsec
ISD, Reverse Drain Current (A)

TJ = 175°C
100
100
Limited by Package
TJ = 25°C 1msec
10 OPERATION IN THIS AREA
10 LIMITED BY RDS(on)

10msec
1 1
Tc = 25°C DC
VGS = 0V Tj = 175°C
Single Pulse
0.1 0.1
0.1 0.4 0.7 1.0 1.3 1.6 1.9 0.1 1 10

VSD , Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 9. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Safe Operating Area
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)

80 2.0
Id = 1.0mA
1.8

77 1.6

1.4

1.2
Energy (µJ)
74
1.0

71 0.8

0.6

68 0.4

0.2

65 0.0
-60 -20 20 60 100 140 180 0 10 20 30 40 50 60
TJ , Temperature ( °C ) VDS, Drain-to-Source Voltage (V)

Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy

10
RDS (on), Drain-to -Source On Resistance (m)

VGS = 5.5V
9 VGS = 6.0V
VGS = 7.0V
8 VGS = 8.0V
VGS = 10V
7

1
0 100 200 300 400 500
ID, Drain Current (A)

Fig 13. Typical On-Resistance vs. Drain Current

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IRFP7530PbF
1

Thermal Response ( Z thJC ) °C/W

D = 0.50
0.1 0.20
0.10
0.05
0.01 0.02
0.01

0.001 SINGLE PULSE

( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming  Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)

100

10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and
Tstart = 150°C.
1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width

600
TOP Single Pulse Notes on Repetitive Avalanche Curves , Figures 15, 16:
BOTTOM 1.0% Duty Cycle (For further info, see AN-1005 at www.irf.com)
500 ID = 100A 1.Avalanche failures assumption:
EAR , Avalanche Energy (mJ)

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of Tjmax. This is validated for every
400 part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
300
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
200 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
100 6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
Fig 16. Maximum Avalanche Energy vs. Temperature EAS (AR) = PD (ave)·tav  

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IRFP7530PbF
4.5 20
IF = 60A
VGS(th), Gate threshold Voltage (V)

4.0 VR = 51V

15 TJ = 25°C
3.5 TJ = 125°C

IRRM (A)
3.0
10
2.5

2.0 ID = 250µA
ID = 1.0mA 5
ID = 1.0A
1.5

1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 0 200 400 600 800 1000
TJ , Temperature ( °C ) diF /dt (A/µs)

Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt
450
20
IF = 100A IF = 60A
400
VR = 51V VR = 51V

TJ = 25°C 350 TJ = 25°C

15
TJ = 125°C TJ = 125°C
300
QRR (nC)
IRRM (A)

250
10

200

150
5

100

50
0
0 200 400 600 800 1000
0 200 400 600 800 1000
diF /dt (A/µs)
diF /dt (A/µs)

Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt

400
IF = 100A
350 VR = 51V
TJ = 25°C
300 TJ = 125°C
QRR (nC)

250

200

150

100

50
0 200 400 600 800 1000
diF /dt (A/µs)

Fig 21. Typical Stored Charge vs. dif/dt

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IRFP7530PbF

Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs

V(BR)DSS

15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
20V
tp 0.01 I AS

Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms

Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms
Id
Vds

Vgs

VDD 
Vgs(th)

Qgs1 Qgs2 Qgd Qgodr

Fig 25a. Gate Charge Test Circuit Fig 25b. Gate Charge Waveform

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IRFP7530PbF

TO-247AC Package Outline (Dimensions are shown in millimeters (inches))

TO-247AC Part Marking Information

Notes: This part marking information applies to devices produced after 02/26/2001

EXAMPLE: THIS IS AN IRFPE30

WITH ASSEMBLY PART NUMBER
LOT CODE 5657 INTERNATIONAL
ASSEMBLED ON WW 35, 2001 RECTIFIER IRFPE30

IN THE ASSEMBLY LINE "H" LOGO 135H

56 57
DATE CODE
ASSEMBLY YEAR 1 = 2001
Note: "P" in assembly line position
indicates "Lead-Free" LOT CODE WEEK 35
LINE H

TO-247AC package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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IRFP7530PbF

Qualification Information†  
Industrial
Qualification Level   (per JEDEC JESD47F) ††

Moisture Sensitivity Level TO-247 N/A

RoHS Compliant Yes

† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

Revision History
Date Comments
 Updated EAS (L =1mH) = 1102mJ on page 2
11/7/2014
 Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 47A, VGS =10V”. on page 2

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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