BHARATIYA VIDYA BHAVAN’S

SARDAR PATEL INSTITUTE OF TECHNOLOGY

MUNSHI NAGAR, ANDHERI(W), MUMBAI 400058

ASSIGNMENT-2

CO3 Differentiate between bipolar and unipolar conduction

CO4 Discuss working principle of semiconductor devices

CO5 Discuss working principle of various optoelectronic devices

CO6 Identify the applications of semiconductor devices

Branch: Electronics Semester: III (S.E.)

Subject: Analog Electronics-I (AE-1/EL31) Date: 14th October 2019

Q1. Write a note on Avalanche Photo Diode.

A photodiode has quantum efficiency of 65%. When photons of energy 1.5 × 10-19 J are
incident upon it. a) At what wavelength is the photodiode operating. b) Calculate the incident
optical power required to obtain photocurrent of 2.5 μA.

Q.2. Explain the formulation of Gummel-Poon Model

Q.3. What are non-ideal effects in BJT.

Q.4. Write a note on AC equivalent circuit of FET

Q.5. Explain the working of MESFET and MODFET

Q.6. Write a note on HBT: Hetereojunction Bipolar Transistor

-- Prof. Najib Ghatte

Q. 7. Calculate the values of following DC parameters for the FET circuit given below
(i) VGQ (iv) VD
(ii) IDQ (v) VG
(iii) VDSQ (vi) VS

Q. 8. Derive the relationship between α, β and γ for an NPN BJT where α, β and γ are notations
for current gains as per their standard meaning.
In an NPN silicon transistor α = 0.995, IE = 10 mA and leakage current ICBO = 0.5 μA. Determine
ICEO.

-- Prof. Najib Ghatte

 MOSFET Questions
1. Diagram and working of E-NMOS and D-NMOS

2. Derive threshold voltage equation of MOSFET with charge distribution

3. Derive saturation drain current MOSFET with charge distribution

4. Write a note on Short Channel Effects

5. Design the oxide thickness of an MOS system to get appropriate threshold voltage for an
n+ polysilicon gate and p-type silicon substrate doped to Na = 6 × 1015 cm3. Assume Qss=
10 cm-2, Work function difference is -1.13 V and threshold voltage = + 0.65 V

6. Draw and explain energy band diagram for MOSFET for different gate bias condition

7. Detailed Explain Channel Length Modulation and velocity saturation effects of FET

8. Construction and working of E-NMOS and D-MOS

9. Explain Two-Terminal MOS structure with P-substrate

10. Derive equation of flat band voltage of a MOSFET with Charge Distribution

- x - x - x -

-- Prof. Najib Ghatte