IRF640, SiHF640

www.vishay.com
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
• Dynamic dV/dt rating
VDS (V) 200
• Repetitive avalanche rated Available
RDS(on) () VGS = 10 V 0.18
• Fast switching
Qg (Max.) (nC) 70 Available
• Ease of paralleling
Qgs (nC) 13
• Simple drive requirements
Qgd (nC) 39
• Material categorization: for definitions of compliance
Configuration Single
please see www.vishay.com/doc?99912
D Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
TO-220AB
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
S
D S ruggedized device design, low on-resistance and
G cost-effectiveness. 
N-Channel MOSFET The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRF640PbF
Lead (Pb)-free
SiHF640-E3
IRF640
SnPb
SiHF640

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 200
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 18
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 11 A
Pulsed Drain Current a IDM 72
Linear Derating Factor 1.0 W/°C
Single Pulse Avalanche Energy b EAS 580 mJ
Repetitive Avalanche Current a IAR 18 A
Repetitive Avalanche Energy a EAR 13 mJ
Maximum Power Dissipation TC = 25 °C PD 125 W
Peak Diode Recovery dV/dt c dV/dt 5.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150
d
°C
Soldering Recommendations (Peak temperature) for 10 s 300
10 lbf · in
Mounting Torque 6-32 or M3 screw
1.1 N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12).
c. ISD  18 A, dI/dt  150 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.

S15-2667-Rev. C, 16-Nov-15 1 Document Number: 91036

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF640, SiHF640
www.vishay.com
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - °C/W
Maximum Junction-to-Case (Drain) RthJC - 1.0

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 200 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.29 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 200 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 160 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 11 A b - - 0.18 
Forward Transconductance gfs VDS = 50 V, ID = 11 A b 6.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 1300 -
Output Capacitance Coss VDS = 25 V, - 430 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 130 -
Total Gate Charge Qg - - 70
ID = 18 A, VDS =160 V,
Gate-Source Charge Qgs VGS = 10 V - - 13 nC
see fig. 6 and 13 b
Gate-Drain Charge Qgd - - 39
Turn-On Delay Time td(on) - 14 -
Rise Time tr VDD = 100 V, ID = 18 A, - 51 -
ns
Turn-Off Delay Time td(off) Rg = 9.1 , RD = 5.4, see fig. 10 b - 45 -
Fall Time tf - 36 -

Internal Drain Inductance LD Between lead, D

- 4.5 -
6 mm (0.25") from
package and center of G
nH
Internal Source Inductance LS die contact - 7.5 -
S

Gate Input Resistance Rg f = 1 MHz, open drain 0.5 - 3.6 

Drain-Source Body Diode Characteristics
MOSFET symbol
Continuous Source-Drain Diode Current IS D
- - 18
showing the 
integral reverse G
A
Pulsed Diode Forward Current a ISM p - n junction diode S
- - 72

Body Diode Voltage VSD TJ = 25 °C, IS = 18 A, VGS = 0 V b - - 2.0 V

Body Diode Reverse Recovery Time trr - 300 610 ns
TJ = 25 °C, IF = 18 A, dI/dt = 100 A/μs b
Body Diode Reverse Recovery Charge Qrr - 3.4 7.1 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

S15-2667-Rev. C, 16-Nov-15 2 Document Number: 91036

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF640, SiHF640
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

RDS(on), Drain-to-Source On Resistance

VGS 3.0
ID = 18 A
Top 15 V VGS = 10 V
10 V 2.5
8.0 V
ID, Drain Current (A)

7.0 V
6.0 V
2.0

(Normalized)
101 5.5 V
5.0 V
Bottom 4.5 V
1.5

1.0
100
4.5 V
0.5
20 µs Pulse Width
TC = 25 °C
0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91036_01 VDS, Drain-to-Source Voltage (V) 91036_04 TJ, Junction Temperature (°C)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 4 - Normalized On-Resistance vs. Temperature

VGS 3000
VGS = 0 V, f = 1 MHz
Top 15 V Ciss = Cgs + Cgd, Cds Shorted
10 V 2500 Crss = Cgd
8.0 V Coss = Cds + Cgd
ID, Drain Current (A)

7.0 V
Capacitance (pF)

101 6.0 V 2000

5.5 V Ciss
5.0 V
1500
Bottom 4.5 V 4.5 V

1000 Coss
100
500 Crss
20 µs Pulse Width
TC = 150 °C
0
10-1 100 101 100 101

91036_02 VDS, Drain-to-Source Voltage (V) 91036_05 VDS, Drain-to-Source Voltage (V)

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20
ID = 18 A
VGS, Gate-to-Source Voltage (V)

VDS = 160 V
150 °C 16
ID, Drain Current (A)

101 VDS = 100 V

VDS = 40 V
12
25 °C

100 8

4
20 µs Pulse Width For test circuit
10-1 VDS = 50 V see figure 13
0
4 5 6 7 8 9 10 0 15 30 45 60 75
91036_03 VGS, Gate-to-Source Voltage (V) 91036_06 QG, Total Gate Charge (nC)

Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

S15-2667-Rev. C, 16-Nov-15 3 Document Number: 91036

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF640, SiHF640
www.vishay.com
Vishay Siliconix

20
ISD, Reverse Drain Current (A)

150 °C
16

ID, Drain Current (A)

25 °C
101 12

4
100

VGS = 0 V
0
0.50 0.70 0.90 1.10 1.30 1.50 25 50 75 100 125 150
91036_07 VSD, Source-to-Drain Voltage (V) 91036_09 TC, Case Temperature (°C)

Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature

RD
103 VDS
5
Operation in this area limited
by RDS(on)
VGS
2
D.U.T.
RG
ID, Drain Current (A)

102 +
10 µs
5 - VDD
2 100 µs
10 V
10 Pulse width ≤ 1 µs
5 1 ms
Duty factor ≤ 0.1 %
2 10 ms
1 Fig. 10a - Switching Time Test Circuit
5 TC = 25 °C
2
TJ = 150 °C VDS
Single Pulse
0.1 90 %
2 5 2 5 2 5 2 5
0.1 1 10 102 103

91036_08 VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area 10 %

VGS
td(on) tr td(off) tf

Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1
0 − 0.5

0.2
0.1 0.1 PDM
0.05
0.02
0.01 Single Pulse t1
10-2 (Thermal Response) t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-3
10-5 10-4 10-3 10-2 0.1 1 10

91036_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S15-2667-Rev. C, 16-Nov-15 4 Document Number: 91036

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF640, SiHF640
www.vishay.com
Vishay Siliconix

L
VDS
Vary tp to obtain QG
required IAS 10 V

RG D.U.T + QGS QGD

V DD
-
I AS
VG
10 V
tp 0.01 Ω

Charge

Fig. 12a - Unclamped Inductive Test Circuit Fig. 13a - Basic Gate Charge Waveform

VDS Current regulator

Same type as D.U.T.
tp
VDD 50 kΩ

12 V 0.2 µF
0.3 µF
VDS
+
VDS
D.U.T. -

IAS VGS

3 mA

Fig. 12b - Unclamped Inductive Waveforms IG ID

Current sampling resistors

1400 Fig. 13b - Gate Charge Test Circuit

ID
EAS, Single Pulse Energy (mJ)

1200 Top 6.0 A

11.0 A
Bottom 18.0 A
1000

800

600

400

200
VDD = 50 V
0
25 50 75 100 125 150

91036_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

S15-2667-Rev. C, 16-Nov-15 5 Document Number: 91036

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF640, SiHF640
www.vishay.com
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor "D"
• D.U.T. - device under test

Driver gate drive

P.W.
Period D=
P.W. Period

VGS = 10 V*

D.U.T. ISD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

* VGS = 5 V for logic level devices

Fig. 14 - For N-Channel











Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91036.

S15-2667-Rev. C, 16-Nov-15 6 Document Number: 91036

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A MILLIMETERS INCHES
E DIM.
MIN. MAX. MIN. MAX.
F
A 4.24 4.65 0.167 0.183
ØP b 0.69 1.02 0.027 0.040
Q

b(1) 1.14 1.78 0.045 0.070

H(1)

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
1 2 3
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1)

L(1) 3.33 4.04 0.131 0.159

M* ØP 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
L

DWG: 6031
Note
• M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

C
b
e
J(1)
e(1)

Package Picture
ASE Xi’an

Revison: 14-Dec-15 1 Document Number: 66542

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 08-Feb-17 1 Document Number: 91000