IEEE Transactions on Dielectrics and Electrical Insulation Vol. 14, No.

4; August 2007 931

High Voltage Marx Generator Implementation

using IGBT Stacks
Jong-Hyun Kim, Byung-Duk Min, Sergey Shenderey and Geun-Hie Rim
Korea Electrotechnology Research Institute (KERI)
P.O. Box 20, Changwon, 641-120, Korea

ABSTRACT
High voltage Marx generator implementation using IGBT (Insulated Gate Bipolar
Transistor) stacks is proposed in this paper. To protect the Marx generator at the
moment of breakdown, AOCP (Active Over-Current Protection) part is included. The
Marx generator is composed of 12 stages and each stage is made of IGBT stacks, two
diode stacks, and capacitors. IGBT stack is used as a single switch. Diode stacks and
inductors are used to charge the high voltage capacitor at each stage without power
loss. These are also used to isolate input and high voltage negative output in high
voltage generation mode. The proposed Marx generator implementation uses IGBT
stack with a simple driver and has modular design. This system structure gives
compactness and easiness to implement the total system. Some experimental and
simulated results are included to verify the system performances in this paper.
Index Terms - Pulsed power supply, IGBT stack, AOCP, Marx generator.

1 INTRODUCTION
HIGH voltage Marx generators have been used for
pulsed power sources [1]. In the past they were usually
implemented using spark gap technology and had low pulse
repetition rates [2].
In recent years Marx circuits based on semiconductor
switches have been proposed for high pulse repetition rates
[3-5]. But these generators were used in low voltage
applications due to the limitation of voltage rating of
semiconductor switches. Marx circuits with high repetition
rates can be used for solving the ecological problems [6], the
electron-beam generation [7], the microwave generation [8],
and plasma source ion implantation (PSII) [9, 10]. Especially,
PSII is an emerging technology for surface treatment of metal
and polymer materials. Through this technology it is possible
to improve surface properties of the materials such as metals,
plastics and ceramics.
In this paper, high voltage Marx generator
implementation using IGBT stacks is proposed for pulsed
power source of PSII. Marx circuit is used as the main
circuit. The Marx circuit is composed of 12 stages and each
stage is made of IGBT stacks, two diode stacks, and
capacitors. To overcome the low voltage of Marx circuit
based on semiconductor switches, new IGBT stack and
driver are suggested and used as a single switch (with 10
kV and 300 A ratings). IGBT stack composed of twelve
IGBTs has a merit with a simple gate driver. Generally,
IGBT stack consists of twelve series IGBTs need twelve
active drivers which need drive circuits and individual
Manuscript received on 14 November 2006, in final form 13 April 2007.
isolation power. But a novel IGBT stack has only two
active drivers and eleven passive drivers (composed of only
passive components such as Resistor, Capacitor, and
Diode). This RCD circuit acts as a gate driver and an RCD
snubber to each IGBT switch. Diode stacks and inductor
are used to charge high voltage capacitor of each stage in
charging mode. These are also used to isolate dc input and
high voltage negative output in high voltage pulse
generation mode. This method is more efficient than the
resistive charging and isolation method. Fault detection and
fast protection are critical parts of the pulsed power supply.
The breakdown in the plasma load is common and results in
very high current. So the active over-current protection
(AOCP) part is included to protect system when breakdown
occurs. From the above characteristics, the proposed system
structure gives compactness, easiness, and reliability for
pulsed power source of PSII..
2 DESCRIPTION OF THE TOPOLOGY
Figure 1 shows the overall circuits of the proposed high
voltage pulsed power implementation using Marx generator
with 12 stages. One stage of the proposed Marx circuit is
made of IGBT stacks (IS), two diode stacks (DS), and
capacitors (C). IGBT stack is used as a single switch with 10
kV and 300 A ratings. Diode stack is made of nine series
connected diodes which have the rating of 1,800 V and 60 A,
respectively. To protect system at the moment of breakdown,
the AOCP is included between the Marx generator’s output
(L) and the output load (Zload). The output diode DO is
necessary for positive voltage blocking which results in
plasma density reduction at the plasma load.

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932
Figure 1. Overall circuit of the proposed pulsed power implementation with 12 stages.
The proposed pulsed power implementation using Marx
circuit with 12 stages can be simplified to charging or high
voltage pulse generation circuit as shown in Figure 2. When
IGBT stacks (IS1 - IS12) are off, the input dc voltage (Vi)
charges each high voltage capacitors (C1 - C12) through an
inductor (L1) and diode stacks (DS1 - DS24) as shown in Figure
2a. The proposed Marx circuit uses an inductor and diode
stacks to charge 12 capacitors in parallel to the input dc
voltage. The merit of using an inductor and diode stacks is
that it could be very quickly charged and is a very efficient
method. If IGBT stacks are turned on at the same time, the
capacitors are simultaneously switched into a series
configuration, delivering a voltage pulse to the load that is
theoretically -N∗Vi (N=12), as shown in Figure 2b. At this
moment, an inductor acts as an isolator DC input and high
voltage pulse output (-11∗Vi). So a maximum inductor voltage
is 12∗Vi.
(a) Charging circuit
(b) High voltage pulse generation circuit
Figure 2. Charging and high voltage pulse generation circuit of the proposed
pulsed power implementation.
The proposed pulsed power system has 12 stages and the
input voltage is maximum 10 kV. So the maximum output
voltage is 120 kV. Because the proposed system uses IGBT
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J.-H. Kim et al.: High Voltage Marx Generator Implementation using IGBT Stacks
stacks as main switches, the pulse width and pulse repetition
rate (PRR) can be easily adjusted. The output current and
voltage are sensed by a current sensor and a voltage divider,
respectively, and are fed to the controller. Using this
information, the system can be protected from fault over-
voltage and over-current.
3 KEY COMPONENTS
3.1 IGBT STACKS & DRIVERS
Twelve IGBT stacks are used in this topology. Figure 3
shows the IGBT stack (single switch) configuration. Each
IGBT stack consists of twelve IGBTs and has only two active
drivers and eleven passive drivers. This RCD circuit acts as a
gate driver and a RCD snubber to each IGBT switch. Before
the bottom IGBT Q1.1 is turned on by the active driver AD1,
let’s suppose that all capacitors (C1 - C12) of RCD circuit are
charged to high value (input voltage divided by 12) through
diodes (D12 - D1). When the bottom IGBT Q1.1 is turned on by
the AD1, the collect-emitter voltage of the bottom IGBT Q1.1
begins to decrease. The decreased collect-emitter voltage of
the IGBT Q1.1 gives discharging path of RCD circuit’s
capacitor C1. At this moment, the energy of RCD circuit’s
capacitor C1 gives turn-on energy to gate-emitter of the upper
IGBT Q2.1 through R1 and Don,2. Then collect-emitter voltage
of the IGBT Q2.1 begins to decrease. Similarly, this decreased
collect-emitter voltage of the IGBT Q2.1 provides discharging
path of RCD circuit capacitor and turn-on energy to gate-
emitter of the upper IGBT Q3.1 through R2 and Don,3. All
twelve IGBTs (Q1.1 - Q12.1) of the stack are turned on at the
same time in this method. With all twelve IGBTs being turned
on, if the active drive2 (AD2) turns on twelve FET(Field
Effect Transistor)s (M1.1 - M12.1) through diodes (Doff,2 - Doff,12),
then gate-emitter voltages of twelve IGBTs are discharged by
FETs and all twelve IGBTs are turned off. In this method,
twelve IGBTs are turned on or off simultaneously using only
two active drivers. Two active drivers are located in the
groundside, which ensures low insulation requirement for the
controller resulting in simple and cost effective driving
method.
Most semiconductor switches are fairly tolerant of
overcurrent but intolerant of overvoltage condition. So voltage
balancing between switches is a very important in series
connection. The voltage balancing during the blocking mode
IEEE Transactions on Dielectrics and Electrical Insulation
(IGBT off state) is achieved using balancing resistor (RB) in
parallel to the IGBT and the voltage sharing during the
transient is obtained from RCD circuit. At this moment, RCD
circuit acts as an RCD snubber.
Figure 4 is a simulated result of the IGBT stack. It shows
that all twelve IGBTs are turned on or off simultaneously and
voltage balancing is maintained for the blocking mode as well
as the turn-on and turn-off transients.
Figure 3. The IGBT stack (single switch) configuration.
Figure 4. Simulated result of the IGBT stack.
IGBT Stacks need isolated driver power and signal. Two
active drivers need isolated power that has maximum 120 kV
insulation level. In this paper, the isolated power is
implemented using two toroidal cores and three 50 kV
insulation wires as shown in Figure 5.
Figure 5. Photograph of isolated driver power.
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Vol. 14, No. 4; August 2007 933
3.2 INDUCTOR
The role of an inductor in the Marx generator is to charge
high voltage capacitors (C1 - C12) in charging mode as shown
in Figure 2a and isolate DC input voltage and high voltage
pulse in high voltage pulse generation mode as shown in
Figure 2b. The charging time (tc) in charging mode can be
calculated as
T 2π L1Ct π L1Ct
tc = = = (1)
4 4 2
where T is a period time, L1 is a charging inductor, and Ct is a
total capacitance (= C1 + C2 + --- + C11 + C12) of the Marx
generator. To meet maximum pulse repetition rates (fmax.), the
charging time should be less than Tmax. (=1/fmax.). So maximum
inductance of L1 is obtained as follows;
π L1, max .Ct 1
≤ (2)
2 f max .
The current of an inductor L1 has a maximum value in high
voltage pulse generation mode. To limit maximum current of
an inductor L1, the minimum inductance of L1 is as follows;
ΔTmax .
Lmin . ≥ vL , max . (3)
ΔI L , max .
where vL,max. is a maximum inductor voltage, ΔTmax is a
maximum pulse width, and ΔIL,max. is a maximum current of an
inductor L1. The inductance of an inductor L1 must be selected
so as to meet above equations (2) and (3).
3.3 CAPACITOR
The capacitor energy is transferred to the output in high
voltage generation mode. For the simple design of capacitance,
let’s assume that ZLoad is a resistor. Then the capacitor in the
Marx generator can be determined according to the RC
discharge time constant. We design system that it allows 20 %
voltage droop of the output pulse voltage at maximum pulse
width and maximum load. To meet above condition, the
equivalent capacitor (Ceq) in high voltage generation mode
should satisfy following equation (4)
Cn τ × Vo
Ceq = ≥ (4)
12 ΔVd × Z Load
where Cn is a value of each capacitor (from C1 to C12), τ is a
maximum pulse width, VO is the maximum output pulse
voltage, ΔVd is voltage droop of the maximum output pulse
voltage, and ZLoad is a maximum load at the maximum output
pulse voltage. Under the 20 % voltage droop condition and the
parameter of Table 1, Cn is 1.5 μF. We use three 0.47 μF (20
kV) capacitors to meet this value.
3.4 AOCP
Fault detection and fast protection are critical parts of the
pulsed power supply. The breakdown in the plasma load is
common and results in very high current. So the AOCP part is
needed to protect system at the moment of breakdown. The
AOCP part is implemented using IGBTs (1200 V, 45 A) as
shown in Figure 6a. The gate-emitter voltage (VGE) of each
934
IGBT is powered by DC voltage VDC through diodes (D1 -DN)
and gate resistors (RG1 -RGN) and this amplitude is limited by
zener diodes (DZ1 -DZN). The collector-emitter current (IC) is
linearly dependent on VGE. The VGE of each IGBT is limited to
15 V and the maximum IC is 100 A in this AOCP. To increase
current rating, two IGBTs are used in parallel. If the IC
exceeds 100 A, the equivalent collector-emitter resistance
becomes very larger (>>RB1, RB2, and RBN). So the resistance
of the AOCP is nearly equal to Rmax. (.=RB1+RB2 ,…, +RBN ).
As shown in Figure 6b, the AOCP part acts as a nonlinear
resistor which functions as current IC. Before the IC exceeds a
critical point (Icritical), the AOCP part has a minimum
resistance (Rmin.) which reflects collector-emitter saturation
voltage VCE(ON). But if the IC exceeds a critical point (Icritical),
the resistance of the AOCP part exponentially increases and
reaches to Rmax.. So the output current can be limited under the
breakdown.
(a) Implementation of the AOCP part.
(b) Nonlinear resistance characteristics of the AOCP part.
Figure 6. Implementation and characteristics of the OCP part.
4 EXPERIMENTAL RESULT
In order to verify the proposed system, Marx circuit shown
in Figure 2 is implemented with the parameters in Table 1. To
meet above equations (2) and (3), the maximum inductance
(L1,max.) is 22.5 mH and the minimum inductance (L1,min.) is 12
mH. So the inductance of an inductor L1 is arbitrary selected
as 15 mH in this paper. The current and charging time of an
inductor at the Marx circuit is simulated as shown in Figure 7.
The maximum current is less than 80 A and charging time is
820 μs. IGBTs used in the proposed system have the ratings of
1,200 V and 300 A. Figure 8 is a photograph of the proposed
Marx generator with 12 stages. Figure 9 shows pulse
waveforms at resistive load of 400 Ω. Pulse voltage and
current are 120 kV and 300 A, respectively. The pulse width
is 3 μs and the rising and falling time of the output pulse
voltage are 300 ns and 2 μs, respectively. Figure 10 shows
waveforms of pulse voltage magnitude variation at resistive
load of 400 Ω. The pulse voltage can be controlled from 20 to
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J.-H. Kim et al.: High Voltage Marx Generator Implementation using IGBT Stacks
120 kV. Figure 11 shows pulse width variation at 80 kV
output. Now the voltage droop at the maximum pulse width is
20 %. The pulse width can be controlled from 2 to 10 μs.
Figures 12 show different pulse repetition rate at resistive load
of 400 Ω. Figure 12a is 100 pps (pulse per second) and Figure
12b is 1000pps. Pulse repetition rate can be controlled from
10 to 1000 pps. Figure 13 shows pulse waveforms at the
plasma load (300 W RF power, 4x10-2 Pa), 100 L, PSII
chamber). Pulse voltage and peak current are 40 kV and 40 A,
respectively. Figure 14 shows normal and overcurrent
waveform due to the breakdown in the plasma load. If the
breakdown is generated, then output current rapidly increases.
If the output current comes to overcurrent sensing point (150
A), then overcurrent protection circuit turns off IGBT stacks.
Now the turn off time of IGBT stacks is 0.5 μs and output
current reaches 280 A. Maximum current during the
breakdown is limited less than 300 A. The proposed pulsed
power generator has high flexibility with respect to the pulse
width, the pulse repetition rate, and the voltage magnitude.
Table 1. System specifications and parameters
Pulse
repetition 10 – 1000 pps Width 2 – 10 μs
rate
Rising time Sub μs Falling time 2 μs
Current Max. 300 A Voltage 20 – 120 kV
ΔIL,max 100 A C1 - C24 1.5 μF
R1 1000 kΩ R2 1000 Ω
Figure 7. Simulation results of the Marx generator.
Figure 8. Photograph of the proposed Marx generator.
IEEE Transactions on Dielectrics and Electrical Insulation
Figure 9. 120kV pulse output waveforms.
Figure 10. Waveforms of pulse voltage variation.
Figure 11. Waveforms of pulse width variation.
(a) 100pps
(b) 1000 pps
Figure 12. Waveforms of different pulse repetition rate.
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Vol. 14, No. 4; August 2007 935
Figure 13. Output waveforms at the plasma load.
Figure 14. Overcurrent waveform due to the breakdown in the plasma load.
5 CONCLUSION
The high voltage pulsed power generator using IGBT
stacks is proposed and implemented in this study. The high
voltage pulsed power generator uses the Marx circuit as main
circuit. Marx circuit is composed of 12 stages and each stage
is made of IGBT stack, two diode stacks, and capacitor. IGBT
stack is proposed and used as a single switch. The AOCP part
is included to protect system under the breakdown. The
developed system has the advantages of high efficiency, long
lifetime, and high parameter flexibility such as voltage
magnitude, the pulse repetition rate, and the pulse width. The
experimental results show good performance of the proposed
system as pulsed power generator for the plasma source ion
implantation source.
ACKNOWLEDGMENT
This work is funded by the NRL (National Research Lab.)
program of the MOST (Ministry of Science and Technology
of Korea).
REFERENCES
[1] W. J. Carey, and J. R. Mayes, “Marx generator design and performance”,
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Switches”, 12th IEEE International Pulse Power Conf., Monterey, California,
USA, pp. 1203 - 1206, 1999.
[3] S. G. E. Pronko, M. T. Ngo, and R. F. K. Germer, “A Solid-state Marx-type
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[4] M. D. Grimes and T. E. Owen, “A High-Repetition Rate, Solid-stage, Marx-
Bank Pulse Generator for Geophysical Instrumentation”, 12th Power
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 936 J.-H. Kim et al.: High Voltage Marx Generator Implementation using IGBT Stacks

Plate Type Precipitator Geometry under Combined DC/pulse
Energizations”, Industry Applications Society Annual Meeting, pp. 725 -
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[7] A. Mizuno and Y. Kamase, “A High-voltage Pulse Source for Electron-
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[8] S. E. Calico and M. C. Scott, “Development of a Compact Marx Generator
for High-power Microwave Applications”, 11th IEEE Intern. Pulse Power
Conf., pp. 1536 - 1541, 1997.
[9] J. L. Shohet, “Plasma-Aided Manufacturing”, IEEE Trans. plasma Sci., Vol.
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Jong-Hyun Kim was born on 18 April 1968 and
received the Ph.D. degree in electronic and electrical
engineering from Pohang University of Science and
Technology. His main research interests are pulsed
power supply, semiconductor stacking, and module type
power converter. He is currently a senior researcher in
power electronics group, Korea Electrotechnology
Research Institute (KERI).
Sergey V. Shenderey received the B.S. degree from
the Leningrad Polytechnic Institute, Radio technical
Faculty, diploma; engineering-physicist specialty:
physics and semiconductors. In 1974, he joined the
Physics-Technical Institute. His main research interests
are pulsed power supply and semiconductor stacking.
Since 2001, he has been with the Korea
Electrotechnology Research Institute (KERI).
Geun-Hie Rim (S’87-M’91) received the B.S. degree
from Seoul National University, Seoul, Korea, in 1978
and the M.S. and Ph.D. degrees from Virginia
Polytechnic Institute and State University, Blacksburg,
in 1988 and 1992, both in electrical engineering. Since
1978, he has been with the Korea Electrotechnology
Research Institute (KERI), Chngwon-Won, as the vice
president for R&D. His specialized research areas
include power electronics, motor drives, high power
energy conversions, power quality and high voltage pulse power generation.

Byung-Duk Min received the BS degree in electronic

engineering at Kyungbook National University in 1990
and received the MS and Ph.D. degres in electronic and
electrical Engineering, at Pohang University of Science
and Technology in 1992 and 1997, respectively. He
worked for Hyundai Electronics Industries and Hyundai
Heavy Industries in Electronic Vehicle Driver
Development Team from 1997 to 2004. His main
research interests are photovoltaic inverter, photovoltaic
simulator, U.P.S., and hybrid electric vehicle driver. He is currently a senior
researcher in renewable energy group, Korea Electrotechnology Research
Institute (KERI).

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