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IRF540NPbF
HEXFET® Power MOSFET
Advanced Process Technology
D
Ultra Low On-Resistance VDSS = 100V
Dynamic dv/dt Rating
175°C Operating Temperature RDS(on) = 44mΩ
Fast Switching G
Fully Avalanche Rated
Lead-Free
ID = 33A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.15
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
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11/3/03
IRF540NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, I D = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 44 mΩ VGS = 10V, ID = 16A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 21 ––– ––– S VDS = 50V, ID = 16A
––– ––– 25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 71 ID = 16A
Qgs Gate-to-Source Charge ––– ––– 14 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V
tr Rise Time ––– 35 ––– ID = 16A
ns
td(off) Turn-Off Delay Time ––– 39 ––– RG = 5.1Ω
tf Fall Time ––– 35 ––– VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G
––– ––– 33
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 16A, VGS = 0V
trr Reverse Recovery Time ––– 115 170 ns TJ = 25°C, IF = 16A
Qrr Reverse Recovery Charge ––– 505 760 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ 16A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. (See fig. 11) TJ ≤ 175°C
Starting TJ = 25°C, L =1.5mH Pulse width ≤ 400µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 16A. (See Figure 12) This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
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IRF540NPbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100
4.5V
10 4.5V 10
1000 3.5
ID = 33A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
3.0
2.5
(Normalized)
TJ = 25 ° C 2.0
100
1.5
TJ = 175 ° C
1.0
0.5
V DS = 50V
20µs PULSE WIDTH VGS = 10V
10 0.0
4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)
3000 20
VGS = 0V, f = 1MHz ID = 16A
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd VDS = 80V
Ciss
2000
12
1500
8
1000
Coss
4
500
Crss FOR TEST CIRCUIT
SEE FIGURE 13
0 0
1 10 100 0 20 40 60 80
VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)
1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100 100
TJ = 175 ° C
100µsec
10 10
TJ = 25 ° C 1msec
1 1
T A = 25°C 10msec
T J = 175°C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.6 1.0 1.4 1.8
VSD ,Source-to-Drain Voltage (V) 1 10 100 1000
VDS , Drain-toSource Voltage (V)
35 RD
VDS
30
VGS
D.U.T.
RG
ID , Drain Current (A)
25 +
-VDD
20
VGS
Pulse Width ≤ 1 µs
15 Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
5 VDS
90%
0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10 P DM
0.1 0.05 t1
0.02 SINGLE PULSE
0.01 (THERMAL RESPONSE) t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
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IRF540NPbF
400
ID
RG D.U.T +
V
- DD 200
IAS A
20V
tp 0.01Ω
V(BR)DSS
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
50KΩ
12V .2µF
QG .3µF
VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF540NPbF
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD ]
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
Mouser Electronics
Authorized Distributor
Infineon:
IRF540NPBF