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2. A GaAs FET has following S- parameters and noise parameters at 1GHz. (Z0=50Ω),
S11 = 0.61∠-155˚, S12 = 0, S21 = 5.0 ∠180 ˚, S22= 0.51∠-20˚. Fmin = 3dB, Γopt =
0.45∠180˚.,Rn = 4Ω. Design a low noise amplifier for noise figure of 3.5dB and gain
of 16 dB.
8. Design an amplifier to have again of 10dB at a 6GHz using transistor with the
following S parameters ( Z0 = 50Ω)
S11 = 0.61∠ − 170˚ , S12 = 0 ,S21 =2.24∠32˚ , S22 = 0.72∠ − 83˚
Plot Constant gain circles for Gs = 1dB, and GL = 2dB . Use matching sections with
open circuited shunt stubs.
9. A GaAs FET has the following S parameters and noise parameters 1GHz (Z0 = 50Ω)
S11 = 0.7∠-155˚ , S12 = 0, S21 = 5.0∠180˚, S22 = 0.51∠ − 20˚
Fmin = 3dB, Γopt = 0.45∠180˚, Rn = 4Ω. Design a low noise amplifier for a noise
figure of 3.5dB and power gain of 16dB
10. Consider the amplifier circuit shown below the
The input and output matching networks are to be designed using open circuited stubs
for ΓS = 0.5 ∠120˚ and ΓL = 0.4∠90˚. Use Smith chart .
11. If the transistor has following S parameters at 5GHz with 50Ω impedance
S11 = 0.6∠ − 175˚ S12 = 0.02∠20˚
S21 = 2.2∠35˚ S22 = 0.6∠ − 95˚
Determine the stability criteria and plot the stability circles
14. Define the Figure of Merit in unilateral microwave amplifiers. If . unilateral gain of
the microwave amplifier is
show that
19. A BJT with Ic = 30mA and VCE=10V is operated at a frequency of 1GHz in 50Ω
system . Its S- parameters are
S11 = 0.73∠175˚ , S12 = 0, S21 = 4.45∠65˚, S22 = 0.21∠ − 89˚
Determine whether the transistor is unconditionally stable . if yes calculate the
optimum terminations GS max, GL max, GTU max
20. A MESFET is biased for large signal class A operation with the following small
signal s parameters at 5GHz
S11 = 0.55∠ − 150° S12 = 0.04∠20°
S21 = 3.5∠170° S22 = 0.45∠30
The large signal S21 = 2.8∠180°
Design a large signal class A amplifier with max transducer gain in 50Ω system