High Voltage IGBT IXDN 55N120 VCES = 1200 V

with optional Diode IXDN 55N120 D1 IC25 = 100 A

VCE(sat) typ = 2.3 V
Short Circuit SOA Capability
Square RBSOA
C C miniBLOC, SOT-227 B
E153432 E
G G G

E E

IXDN 55N120 IXDN 55N120 D1 E

C
Symbol Conditions Maximum Ratings E = Emitter ①, C = Collector
G = Gate, E = Emitter ①
VCES TJ = 25°C to 150°C 1200 V
① Either Emitter terminal can be used as
VCGR TJ = 25°C to 150°C; RGE = 20 kW 1200 V Main or Kelvin Emitter

VGES Continuous ±20 V

VGEM Transient ±30 V
IC25 TC = 25°C 100 A
IC90 TC = 90°C 62 A
ICM TC = 90°C, tp = 1 ms 124 A Features
RBSOA VGE = ±15 V, TJ = 125°C, RG = 22 W ICM = 100 A ●
NPT IGBT technology
Clamped inductive load, L = 30 µH VCEK < VCES ●
low saturation voltage
tSC VGE = ±15 V, VCE = VCES, TJ = 125°C 10 µs
●
low switching losses
(SCSOA) RG = 22 W, non repetitive
●
square RBSOA, no latch up
●
high short circuit capability
PC TC = 25°C IGBT 450 W ●
positive temperature coefficient for
Diode 220 W easy paralleling
●
MOS input, voltage controlled
VISOL 50/60 Hz; IISOL £ 1 mA 2500 V~ ●
optional ultra fast diode
TJ -40 ... +150 °C
●
International standard package
miniBLOC
Tstg -40 ... +150 °C
Md Mounting torque 1.5/13 Nm/lb.in. Advantages
Terminal connection torque (M4) 1.5/13 Nm/lb.in. ●
Space savings
Weight 30 g
●
Easy to mount with 2 screws
●
High power density

Symbol Conditions Characteristic Values Typical Applications

(TJ = 25°C, unless otherwise specified)
min. typ. max.
●
AC motor speed control
●
DC servo and robot drives
V(BR)CES VGE = 0 V 1200 V ●
DC choppers
●
Uninteruptible power supplies (UPS)
VGE(th) IC = 2 mA, VCE = VGE 4.5 6.5 V ●
Switch-mode and resonant-mode
ICES VCE = VCES TJ = 25°C 3.8 mA power supplies
TJ = 125°C 6 mA
IGES VCE = 0 V, VGE = ± 20 V ± 500 nA
VCE(sat) IC = 55 A, VGE = 15 V 2.3 2.8 V
032

© 2000 IXYS All rights reserved 1-4

 IXDN 55N120
IXDN 55N120 D1

Symbol Conditions Characteristic Values

miniBLOC, SOT-227 B
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Cies 3300 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 500 pF
Cres 220 pF
Qg IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 240 nC
td(on) 100 ns
tr 70 ns
Inductive load, TJ = 125°C
td(off) 500 ns
IC = 55 A, VGE = ±15 V,
tf VCE = 600 V, RG = 22 W 70 ns
Eon 8.4 mJ M4 screws (4x) supplied
Eoff 6.2 mJ
Dim. Millimeter Inches
RthJC 0.28 K/W Min. Max. Min. Max.
A 31.50 31.88 1.240 1.255
RthCK Package with heatsink compound 0.1 K/W B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
H 37.80 38.20 1.489 1.505
Reverse Diode (FRED) [D1 version only] Characteristic Values J 11.68 12.22 0.460 0.481
K 8.92 9.60 0.351 0.378
(TJ = 25°C, unless otherwise specified)
L 0.76 0.84 0.030 0.033
Symbol Conditions min. typ. max. M 12.60 12.85 0.496 0.506
N 25.15 25.42 0.990 1.001
VF IF = 55 A, VGE = 0 V 2.4 2.6 V O 1.98 2.13 0.078 0.084
IF = 55 A, VGE = 0 V, TJ = 125°C 1.9 V P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
R 3.94 4.42 0.155 0.174
IF TC = 25°C 110 A S 4.72 4.85 0.186 0.191
TC = 90°C 60 A T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
V 3.30 4.57 0.130 0.180
IRM IF = 55 A, -diF/dt = 400 A/µs, VR = 600 V 40 A W 0.780 0.830 19.81 21.08
trr VGE = 0 V, TJ = 125°C 200 ns
trr IF = 1 A, -diF/dt = 100 A/µs, VR = 30 V, VGE = 0 V 40 ns
RthJC 0.6 K/W

© 2000 IXYS All rights reserved 2-4

 IXDN 55N120
IXDN 55N120 D1

120 120
TJ = 25°C VGE=17V
A VGE=17V A TJ = 125°C
15V
100 15V 100
IC IC 13V
13V
80 80
11V 11V
60 60

40 40 9V
9V
20 20

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V
VCE VCE

Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics

120 180
VCE = 20V
A TJ = 125°C
TJ = 25°C
100 A
150
TJ = 25°C
IC IF
80 120

60 90

40 60

20 30

0 0
5 6 7 8 9 10 11 V 0 1 2 3 V 4
VGE VF

Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of

free wheeling diode

20 120 300
V VCE = 600V
IC = 50A A ns
VGE 15 IRM trr trr
80 200

10
TJ = 125°C
40 VR = 600V 100
IRM
5 IF = 50A

IXDN55N120
0 0 0
0 50 100 150 200 250 nC 0 200 400 600 A/ms
800 1000
QG -di/dt
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode

© 2000 IXYS All rights reserved 3-4

 IXDN 55N120
IXDN 55N120 D1

24 120 12 600
ns mJ Eoff ns
mJ
10 500
td(off)
18 90 Eoff
Eon td(on) t 8 400 t

12 60 6 300
tr VCE = 600V
VCE = 600V
VGE = ±15V
VGE = ±15V 4 200
RG = 22W
6 RG = 22W 30
TJ = 125°C
Eon TJ = 125°C 2 100
tf

0 0 0 0
0 20 40 60 80 100 A 0 20 40 60 80 100 A
IC IC

Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current

20 240 10 1500
VCE = 600V td(on) VCE = 600V td(off)
mJ ns mJ ns
VGE = ±15V VGE = ±15V
IC = 50A 8 IC = 50A 1200
Eoff
Eon 15 TJ = 125°C Eon
180
t
Eoff
TJ = 125°C t
6 900
10 120
tr
4 600

5 60
2 300

tf
0 0 0 0
0 10 20 30 40 50 60 70 80 90 100 W 0 10 20 30 40 50 60 70 80 90 100 W
RG RG
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor

120 1
A
K/W
100
0.1
ICM ZthJC
80 diode IGBT
RG = 22W 0.01
60 TJ = 125°C
VCEK < VCES
0.001
40

0.0001
20 single pulse

IXDN55N120
0 0.00001
0 200 400 600 800 1000 1200 V 0.00001 0.0001 0.001 0.01 0.1 s 1
VCE t
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA

© 2000 IXYS All rights reserved 4-4

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.