Sei sulla pagina 1di 2

# Submission date : Monday 17 feb 2020

## ESC205: Introduction to electronics

Assignment1
1. A pure semiconductor is doped with donor impurities in ratio 1:107. Find
(a) donor concentration
(b) Concentration of electrons
(c) Concentration of holes.

## Assume total number of atoms=4.421×1022/cm3.

2. Find the forward current of a Silicon diode, operating at room temperature, with forward bias voltage
of 750mV across it, if saturation current is 10nA.
3. A silicon diode indicates forward current of 2mA and 10mA, when forward voltage across the diode is
0.6V and 0.7V respectively. Find the operating temperature of diode junction.
4. For the circuit given in figure,
(a) Using the approximate characteristics for the Si diode, determine the level of VD, ID, and VR
(b) Perform the same analysis as part (a) using the ideal model for the diode.
(c) Do the results obtained in parts (a) and (b) suggest that the ideal model can provide a good
approximation for the actual response under some conditions?

5. Determine the current I for each of the configurations of Fig. 2.134 using the approximate equivalent
model for the diode.

## 6. Sketch vo for the network for the input shown

7. For a BJT,
(a) Given α=0.998, determine IC if IE = 4 mA.
(b) Determine α if IE=2.8 mA and IB = 20 μA.
(c) Find IE if IB =40 μA and α is 0.98.
8. What are the major differences between the collector characteristics of a BJT transistor and the drain
characteristics of a JFET transistor? Compare the units of each axis and the controlling variable. How
does IC react to increasing levels of IB versus changes in ID to increasingly negative values of VGS? How
does the spacing between steps of IB compare to the spacing between steps of VGS? Compare VCsat to VP
in defining the nonlinear region at low levels of output voltage
9. (a) Describe in your own words why IG is effectively zero amperes for a JFET transistor.
(b) Why is the input impedance to a JFET so high?
(c) Why is the terminology field effect appropriate for this important three-terminal device?
(d) Why is BJT called as Current controlled device and FET as Voltage controlled device?
10. A p-channel JFET has device parameters of IDSS = 7.5 mA and VP = 4 V. Sketch the transfer
characteristics.
11. Given a depletion-type MOSFET with IDSS =6 mA and VP=-3 V, determine the drain current at VGS=-
1, 0, 1, and 2 V. Compare the difference in current levels between -1 and 0 V with the difference between
1 and 2 V. In the positive VGS region, does the drain current increase at a significantly higher rate than
for negative values? Does the ID curve become more and more vertical with increasing positive values
of VGS. Explain.
12. Calculate the gain, input, and output impedances of a voltage-series feedback amplifier having A=-300,
Ri=1.5 kΩ, Ro = 50 kΩ, and β= -1/15.
13. Calculate the operating frequency of a BJT phase-shift oscillator for R= 6kΩ, C=1500 pF, and
RC=18kΩ.
14. For an FET Colpitts oscillator, determine the circuit oscillation frequency if C1 =750 pF, C2=2500 pF,
and L= 40 μH
15. Describe two techniques for turning an SCR off.