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• 13.5 dB Gain packaged in a low-cost surface-mount package.
The combination of low noise figure and high
• +26 dBm P1dB output IP3 at the same bias point makes it ideal for
• +37 dBm OIP3 receiver and transmitter applications. The FP101
• 2.0 dB Noise Figure achieves +37 dBm OIP3 with consistent quality to
maintain MTTF values exceeding 100 years at 1 2 3
• MTTF > 100 years mounting temperatures of +85°C and is housed in a RF IN GND RF OUT
• SOT-89 SMT Package SOT-89 industry-standard SMT package.
Function Pin No.
Input / Gate 1
All devices are 100% RF and DC tested. The
Output / Drain 3
product is targeted for applications where high Ground 2, 4
linearity is required.
Specification
DC Parameter Units Min Typ Max Comments
Saturated Drain Current, Idss mA 270 Vgs = 0 V, Vds = 3 V
Transconductance, Gm mS 120
Pinch Off Voltage, Vp V -2.3 Ids = 1.2 mA
Thermal Information
Parameters Rating
Operating Case Temperature -40 to +85° C
Storage Temperature -55 to +125° C
Thermal Resistance (junction to ground tab) 68° C / W
Junction Temperature* (8V / 100 mA) 139° C
Junction Temperature* (5V / 100 mA) 119° C
* A minimum MTTF of 1 million hours is achieved for junction temperatures below 160° C.
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com September 2003
FP101
High Dynamic Range FET
The Communications Edge TM
Product Information
1.0
Swp Max
1.0
30 Swp Max
0.8
0. 8
DB(|S[2,1]|) 5.05GHz 5.05GHz
6
0.
S21
0.
0
0
2.
2.
DB(MSG)
25 MSG 0.
4 4
0 0.
3. 0
3.
0 0
4. 4.
20 5.0 5. 0
0.2 0. 2
S21, MSG(dB)
10.0 10.0
15
10.0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
10 -10.0 -1 0.0
2
-0. 2
- 0.
0
-5. 0
5 -4
.0
.0
- 5.
-4
.0
-3 .0
.4 .4
-3
-0 -0
0
.0
.0
-2
.6
0 1 2 3 4 5
-2
.6
-0
-0
-0.8
-0.8
Swp Min
-1.0
Frequency(GHz) Swp Min
-1.0
0.05GHz 0.05GHz
Typical Performance 15 0
Parameter Value Comments S21
14 -5
Notes
1700 1750 1800 1850 1900 1950 2000
1. OIP3 is measured with 2 tones at an output power of +10 dBm/tone with 10 MHz
spacing at 1850 MHz. The suppression on the largest IM3 product is used to calculate Frequency (MHz)
OIP3 using a 2:1 slope rule. Test parameters were taken at 25 °C.
2. All components are 0603 size. Toko LL1608-FH chip inductors and AVX ±0.1 pF
tolerance capacitors (C3 and C5) were used in the design. Other capacitor components
are standard types. The overall circuit size should be minimized as much as possible.
3. The drain voltage can be increased to +8 V for increased output power performance
(higher P1dB, higher OIP3). The gate voltage can be adjusted so that the drain bias can
be anywhere between 50 - 150 mA.
Vgs
C2
0.018 µF
Vds = + 5 V
R1 100 mA
51 Ω C4
C2 68 pF
68 pF
L1 L3
C1 18 nH 8.2 nH C6
68 pF L2 R2 L4
68 pF
3.3 nH 5.1 Ω 2.2 nH RF OUT
RF IN
FP101
C3 C5
2.7 pF 1.5 pF
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com September 2003
FP101
High Dynamic Range FET
The Communications Edge TM
Product Information
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com September 2003
FP101
High Dynamic Range FET
The Communications Edge TM
Product Information
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com September 2003