Analog Circuit: Design to Layout

Laboratory File

Submitted by - Rahul Gupta

Roll Number - 2K17/EC/136

2K17/EC/136
 EXPERIMENT NO. 1
CHARACTERIZATION OF MOSFET

Objective

To characterize an n-channel and p-channel MOSFET by measuring the device parameters

• Device Transconductance parameter (Kn / Kp )
• Threshold voltage (Vt)
• Channel length modulation coefficient (λ)
• Drain Output Resistance (ro )
• Verify Gm vs Id to be parabolic in nature

Theory

For an n-channel MOSFET, the circuit to observe its characteristics, is as shown below:

Fig.1

In the saturation mode (that is VDS> (VGS –Vt)), neglecting the channel length modulation, the drain
current is described by,
𝐾𝑛 𝑊
𝐼𝐷 = (𝑉𝐺𝑆 − 𝑉𝑡 )2 (1)
2 𝐿

Now the square root of the drain current can be written as a linear function of gate to source voltage.

𝐾 𝑊
√𝐼 𝐷 = √ 2𝑛 𝐿
(𝑉𝐺𝑆 − 𝑉𝑡 ) (2)

If the square root of measured drain current value is plotted against gate to source voltage it will be a
𝐾 𝑊
linear curve. The slope of each curve is equal to√ 2𝑛 𝐿 . Thus the transconductance parameter Kn can
be simply calculated from this slope. The voltage axis intercept of the resulting curve can determine
the threshold voltage (Vt). By extrapolating the curves to zero drain current the threshold voltage Vt

2K17/EC/136
can be computed. The voltage axis intercept of curve with Vsb = 0, gives the zero bias threshold volt
(Vto).

The experimental measurement of the channel length modulation coefficient lambda requires a
different test circuit setup. The drain to source voltage is chosen sufficiently large (VDS>VGS-Vt) that
the transistor operation in saturation region. The saturation drain current is then measured for two
different drain voltages values VDS1, VDS2. Note that the drain current in the saturation mode is given
by
𝐾𝑛 𝑤
𝐼𝐷 = (𝑉𝐺𝑆 − 𝑉𝑡 )2(1 + 𝜆𝑉𝐷𝑆 ) (3)
2 𝑙

The ratio of ID1, ID2 is

𝐼𝐷2 (1+ 𝜆𝑉𝐷𝑆2 )

= (4)
𝐼𝐷1 (1+ 𝜆𝑉𝐷𝑆1 )

Which can be used to calculate the λ. This is in fact equivalent to calculating the slope of drain current
versus drain voltage curve in the saturation region. Print a plot of ID with VDS for different value of the
gate to source voltage VGS. Using this plot, parameter λ can be obtained.

1. NMOS

Circuit Diagram

N-Channel MOSFET

2K17/EC/136
 Id vs Vgs

√𝐼𝑑 𝑣𝑠 𝑉𝑔𝑠

2K17/EC/136
 𝜕(√𝐼𝑑)/𝜕(𝑉𝑔𝑠)

Calculations

(i) Kn

From the curve of √𝐼𝑑 𝑣𝑠 𝑉𝑔𝑠 and the curve of its slope, taking the average slope to be 22*10-3.

𝐾 𝑊
√ 2𝑛 = 24*10-3, for the given MOSFET W = 5u and L = 1u
𝐿

Kn = 230.4 uA/V2

(ii) Vt

From the curve of √𝐼𝑑 𝑣𝑠 𝑉𝑔𝑠, observing the linear part of the graph

√𝐼 𝐷 = 24 × 10−3 × (𝑉𝐺𝑆 − 𝑉𝑡 )

Taking a typical value of VGS = 1.2 V and √𝐼 𝐷 = 18.5 m √𝐴

18.5 m = 24 m (1.2 V - Vt )

Vt = 0.43 V

2K17/EC/136
 Id vs Vds

(iii) λ
We know that current in saturation region follows the relation,

𝐼𝐷2 (1 + 𝜆𝑉𝐷𝑆2 )
=
𝐼𝐷1 (1 + 𝜆𝑉𝐷𝑆1 )

VDS1 1.51V
ID1 193.011uA
VDS2 1.8V
ID2 193.907uA

193.011/193.907= (1+ 1.51 λ) /(1+ 1.8 λ )

Resulting in λ =0.016 v-1

(iv) ro
𝑉𝐷𝑆1 − 𝑉𝐷𝑆2
𝑟𝑜 =
𝐼𝐷1 − 𝐼𝐷2

ro = 3.48 MΩ

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 𝑊
(v) 𝑔𝑚 = √(2𝑘𝑛 𝐼 )
𝐿 𝐷

As expected from the equation, the graph came out to be parabolic in nature.

2. PMOS

Circuit Diagram

P-Channel MOSFET

2K17/EC/136
 Id vs Vgs

√𝐼𝑑 𝑣𝑠 𝑉𝑔𝑠

2K17/EC/136
 𝜕(√𝐼𝑑)/𝜕(𝑉𝑔𝑠)

Calculations

(i) Kp

From the curve of √𝐼𝑑 𝑣𝑠 𝑉𝑔𝑠 and the curve of its slope, taking the average slope to be 22*10-3.

𝐾𝑝 𝑊
√ = 9.5*10-3, for the given MOSFET W = 5u and L = 1u
2 𝐿

Kn = 36.1 uA/V2

(ii) Vt

From the curve of √𝐼𝑑 𝑣𝑠 𝑉𝑔𝑠, observing the linear part of the graph

√𝐼 𝐷 = 9.5 × 10−3 × (|𝑉𝐺𝑆 | − |𝑉𝑡 |)

Taking a typical value of |VGS| = 0.7 V and √𝐼 𝐷 = 2.8 m √𝐴

2.8 m = 9.5 m (0.7 V - |Vt |)

Vt = -0.40 V

2K17/EC/136
 Id vs Vds

(iii) λ
We know that current in saturation region follows the relation,

𝐼𝐷2 (1 + 𝜆|𝑉𝐷𝑆2 |)
=
𝐼𝐷1 (1 + 𝜆|𝑉𝐷𝑆1 |)

VDS1 -800 mV
ID1 38.36 uA
VDS2 -1.4 V
ID2 39.03 uA

38.36/39.03= (1+ 0.8 λ) /(1+ 1.4 λ )

Resulting in λ =0.045 v-1

(iv) ro
𝑉𝐷𝑆1 − 𝑉𝐷𝑆2
𝑟𝑜 =
𝐼𝐷1 − 𝐼𝐷2

ro = 0.89 MΩ

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 𝑊
(V) 𝑔𝑚 = √(2𝑘𝑝 𝐼 )
𝐿 𝐷

As expected from the equation, the graph came out to be parabolic in nature.

Result

N-Channel MOSFET P-Channel MOSFET

Kn / K p 230.4 uA/V2 36.1 uA/V2

Vt 0.43 V -0.40 V

λ 0.016 v-1 0.045 v-1

ro 3,48 MΩ 0.89 MΩ

2K17/EC/136