MCQ in DC Biasing - BJTs

Monday, August 26, 2019 4:27 PM

Practice Exam Test Question

1. Which of the following currents is nearly equal to each other? IC and IE
2. The ratio of which two currents is represented by β? IC and IB
3. At what region of operation is the base-emitter junction forward biased and base-collector junction
reverse biased? Linear or active
4. Calculated the approximate value of the maximum power rating for the transistor represented by the
output characteristics of Figure 4.1? 170 mW
5. The cutoff region is defined by IB ≤ 0 A.
6. The saturation is defined by VCE ≤ VCEsat.
7. For the BJT to operate in the active (linear) region, the base-emitter junction must be forward-
biased and the base-collector must be reverse-biased.
8. For the BJT to operate in the saturation region, the base-emitter junction must be forward-biased
and the base-collector must be forward-biased.
9. Which of the following voltages must have a negative level (value) in any npn bias circuit? VBC
10. For what value of β does the transistor enter the saturation region? 116

11. Determine the reading on the meter when VCC = 20 V, RC = 5 k-ohms and IC = 2 mA. VCE = 10
V

12. Which of the following is assumed in the approximate analysis of a voltage divider circuit? IB is
essentially zero amperes, R1 and R2 are considered to be series elements, βRE ≥ 10 R2.
13. It is desirable to design a bias circuit that is independent of the transistor beta. True
14. Calculate the voltage across the 91 k-ohm resistor. 3.23 V

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15. Calculate the value of VCEQ. 7.86 V

16. Calculate ICsat. 4.72 mA

17. Calculate VCE. -4.52 V

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18. Calculate VCE. 4.52 V

19. Which of the following is (are) related to an emitter-follower configuration? The input and output
signals are in phase, The voltage gain is slightly less than 1, Output is drawn from the emitter
terminal
20. Determine the values of VCB and IB for this circuit? 1.4 V, 59.7 uA

21. Calculate Eth for this network. -3.65 V

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22. Calculate Rsat if VCE = 0.3 V. 49.2 ohms

23. You can select the values for the emitter and collector resistors from the information that is
provided for this circuit. False

24. In the case of this circuit, you must assume that VE = 0.1(VCC) in order to calculate RC and RE.
True

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 25. Which of the following is (are) the application(s) of a transistor? Amplification of signal,
switching and control, computer logic circuitry
26. Calculate the storage time in a transistor switching network if toff is 56 ns, tf = 14 ns and tr = 20 ns.
42 ns
27. The total time required for the transistor to switch from the 'off' to the 'on' state is designated as ton
and defined as the delay time plus the time element. True
28. For an 'on' transistor, the voltage VBE should be in the neighborhood of 0.7 V. True
29. For the typical transistor amplifier in the active region, VCE is usually about 25% to 75% of VCC.
30. Which of the following is (are) a stability factor? S(ICO), S(VBE), S(β)
31. In a fixed-bias circuit, which one of the stability factors overrides the other factors? S(β)
32. In a voltage-divider circuit, which one of the stability factors has the least effect on the device at
very high temperature? S(β)
33. Use this table to determine the change in IC from 25 degrees Celsius to 175 degrees Celsius for
RB/RE = 250 due to S(ICO) stability factor. Assume an emitter-bias configuration. 14034 uA

34. Determine the change in IC from 25 degrees Celsius to 175 degrees Celsius for the transistor
defined in this table for fixed-bias with RB = 240 k-ohms and β = 100 due to S(VBE) stability
factor. 145.8 uA

35. Determine ICQ at a temperature of 175 degrees Celsius if ICQ = 2 mA at 25 degrees Celsius for
RB/RE = 20 due to the S(β) stability factor. 2.417 mA

Fill in the blanks Questions

1. By definition, quiescent means quiet, still and inactive.
2. DC and AC should be considered in the analysis or design of any electronic amplifiers.
3. For the dc analysis the network can be isolated from the indicated ac levels by replacing the
capacitor with an open circuit equivalent.
4. In a fixed bias circuit with a fixed supply voltage VCC, the selection of a base resistor sets the level
of base current for the operating point.
5. Changes in temperature will affect the level of both current gain β and leakage current ICEO.

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 5. Changes in temperature will affect the level of both current gain β and leakage current ICEO.
6. In a fixed-bias circuit, the magnitude of IC is controlled by and therefor is a function of RB and β.
7. For a transistor operating in the saturation region, the collector current IC is at its maximum and
the collector-emitter voltage VCE is to the left of VCEsat line.
8. The dc load line is determined solely by the collector-emitter loop.
9. A change in value of VCC will create a will create a new load line parallel to its previous one in a
fixed-bias circuit.
10. In a fixed-bias circuit, the slope of the dc load line is controlled by RC.
11. The emitter resistor in an emitter-stabilized bias circuit appears to be larger in the base circuit.
12. Thevenin resistance Rth is the primary difference between the exact and approximate techniques
used in the analysis of a voltage divider circuit.
13. The Thevenin equivalent network is used in the analysis of the voltage divider circuit.
14. The saturation current of a transistor used in a fixed-bias circuit is more than its value used in a
emitter-stabilized or voltage divider bias circuit for the same values of RC.
15. In a collector feedback bias circuit, the current through the collector resistance is IB + IC' and the
collector current is IC.
16. Fixed bias is the least stabilized circuit.
17. Voltage divider is less dependent on the transistor beta.
18. In a transistor-switching network, the level of the resistance between the collector and emitter is
low at the saturation and is high at the cutoff.
19. In a transistor-switching network, the operating point switches from cutoff to saturation regions
along the load line.
20. For the typical transistor amplifier in the active region, VCE is usually about 25% to 75% of VCC.
21. In any amplifier employing a transistor, the collector current IC is sensitive to β, VBE and ICO.
22. As the temperature increases, β increases, VBE decreases and ICO doubles in value for every 10
degrees Celsius.
23. A significant increase in leakage current due to increase in temperature creates larger spacing
between IB curves.
24. The higher the stability factor, the more sensitive the network is to variations in the parameter.
25. In an emitter-bias configuration, the larger the resistance Re, the lower the stability factor and the
more stable is the system.

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