® BTB24 B

STANDARD TRIACS

..
FEATURES
HIGH SURGE CURRENT CAPABILITY
COMMUTATION : (dV/dt)c > 10V/µs

DESCRIPTION
A1
The BTB24 B triac family are high performance A2
G
glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where high surge current capability is re- TO220AB
quired. Application such as phase control and (Plastic)
static switching on inductive or resistive load.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current Tc = 90 °C 25 A
(360° conduction angle)
ITSM Non repetitive surge peak on-state current tp = 8.3 ms 260 A
( Tj initial = 25°C )
tp = 10 ms 250
I2t I2t value tp = 10 ms 312 A2s
dI/dt Critical rate of rise of on-state current Repetitive 50 A/µs
Gate supply : IG = 2 . IGT tr ≤ 100ns F = 100 Hz
Tstg Storage and operating junction temperature range - 40 to + 150 °C
Tj - 40 to + 125 °C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 260 °C
from case

Symbol Parameter BTB24-... B Unit

400 600 700 800

VDRM Repetitive peak off-state voltage 400 600 700 800 V

VRRM Tj = 125 °C

October 1998 - Ed: 2A 1/4

BTB24 B
THERMAL RESISTANCES
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC 1.5 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 1.1 °C/W

GATE CHARACTERISTICS (maximum values)

PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A (tp = 20 µs) VGM = 16V (tp = 20 µs).

ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Quadrant Suffix Unit
IGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MIN 5 mA
I-II-III MAX 50
IV MAX 100
VGT VD=12V (DC) RL=33Ω Tj=25°C I-II-III-IV MAX 1.3 V
VGD VD=VDRM RL=3.3kΩ Tj=125°C I-II-III-IV MIN 0.2 V
IL IG=1.2 IGT Tj=25°C I-III-IV MAX 70 mA
II 150
IH * IT= 500mA gate open Tj=25°C MAX 50 mA
VTM * ITM= 35A tp= 380µs Tj=25°C MAX 1.6 V
IDRM VDRM Rated Tj=25°C MAX 5 µA
IRRM VRRM Rated Tj=125°C MAX 2 mA
dV/dt * Linear slope up to VD=67%VDRM Tj=125°C MIN 750 V/µs
gate open
(dV/dt)c * (dI/dt)c = 11.1A/ms Tj=125°C MIN 10 V/µs

* For either polarity of electrode A2 voltage with reference to electrode A1.

Fig. 1: Maximum power dissipation versus RMS Fig. 2: Correlation between maximum power dissipation
on-state current. and maximum allowable temperatures (Tamb and
Tcase) for different thermal resistances heatsink +
contact.

P(W)
35 P(W) Tcase (°C)
35
30 α = 180°
30 Rth=3°C/W Rth=2°C/W Rth=1°C/W Rth=0°C/W 90
25 α = 120° 25
20 100
α = 90° 20
15 α = 60°
15
110
10 180° 10
α α = 180°
α = 30° 5
5 α 120
Tamb(°C)
IT(rms)(A) 0 125
0 0 20 40 60 80 100 120 140
0 5 10 15 20 25

2/4
 BTB24 B
Fig. 3: RMS on-state current versus case temperature. Fig. 4: Relative variation of thermal impedance versus
pulse duration.

IT(rms)(A) K=[Zth/Rth]
30 1.00
α = 180°

25 Zth(j-c)

20
Zth(j-a)
15 0.10

10

5
Tcase(°C) tp(s)
0 0.01
0 25 50 75 100 125 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 5: Relative variation of gate trigger current and Fig. 6: Non Repetitive surge peak on-state current
holding current versus junction temperature (typical versus number of cycles.
values).

IGT,IH[Tj] / IGT,IH[Tj=25°C] ITSM(A)

2.5 220 Tj initial=25°C
200 F=50Hz

2.0 IGT 180

160
1.5 140
120
IH 100
1.0 80
60
0.5 40
Tj(°C) 20 Number of cycles
0.0 0
-40 -20 0 20 40 60 80 100 120 140 1 10 100 1000

Fig. 7: Non repetitive surge peak on-state current for a Fig. 8: On-state characteristics (maximum values).
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.

ITSM(A),I²t(A²s) ITM(A)
1000 300
Tj initial=25°C
Tj=25°C

100
ITSM Tj=Tj max.
500
I²t

10
200
Tj max.:
Vto=0.95V
tp(ms) VTM(V) Rt=19mΩ

100 1
1 2 5 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

3/4
BTB24 B

PACKAGE MECHANICAL DATA

TO220AB Plastic
B C
REF. DIMENSIONS
I b2
Millimeters Inches
L
Min. Max. Min. Max.
A 14.23 15.87 0.560 0.625
F
a1 4.50 0.177
a2 12.70 14.70 0.500 0.579
A
B 10.20 10.45 0.402 0.411
l1
b1 0.64 0.96 0.025 0.038
a1 b2 1.15 1.39 0.045 0.055
C 4.48 4.82 0.176 0.190
c1 0.35 0.65 0.020 0.026
l3
l2 c2 2.10 2.70 0.083 0.106
a2 e 2.29 2.79 0.090 0.110
b1
F 5.85 6.85 0.230 0.270
b1
I 3.55 4.00 0.140 0.157
L 2.54 3.00 0.100 0.118
c1 I1 1.30 0.051
e c2 l2 1.45 1.75 0.057 0.069
e l3 0.80 1.20 0.031 0.047

Cooling method : C
Marking : type number
Weight : 2.25 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces
all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics

© 1998 STMicroelectronics - Printed in Italy - All rights reserved.

STMicroelectronics GROUP OF COMPANIES

Austral ia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.

http://www.st.com

4/4