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TCMT110. Series
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Vishay Semiconductors
Optocoupler, Phototransistor Output, Single Channel,
Half Pitch Mini-Flat Package
FEATURES
C E
4 3
• Low profile package (half pitch)
• AC isolation test voltage 3750 VRMS
• Low coupling capacitance of typical 0.3 pF
• Current transfer ratio (CTR) selected into groups
1 2 • Low temperature coefficient of CTR
A C • Wide ambient temperature range
16467-4
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION APPLICATIONS
The TCMT110. series consist of a phototransistor optically
• Programmable logic controllers
coupled to a gallium arsenide infrared-emitting diode in a
4 pin package. • Modems
The elements are mounted on one leadframe providing a • Answering machines
fixed distance between input and output for highest safety • General applications
requirements.
AGENCY APPROVALS
• UL1577, file no. E76222 system code M, double
protection
• cUL CSA 22.2 bulletin 5A, double protection
• DIN EN 60747-5-5 (VDE 0884-5)
• FIMKO: FI EN 60950-1:2006
• BSI: BS EN60065:2002
BS EN60950-1:2006
ORDERING INFORMATION
SOP-4
T C M T 1 1 0 #
TCMT110. Series
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Vishay Semiconductors
TCMT110. Series
www.vishay.com
Vishay Semiconductors
IF IF +5V
IF I F = 10 mA +5V
0
I C = 2 mA; adjusted through 0
IC
input amplitude
R G = 50 Ω
R G = 50 Ω
tp
= 0.01 tp
T = 0.01
T
t p = 50 µs
Channel I t p = 50 µs
Oscilloscope Channel I
R L = 1 MΩ Oscilloscope
Channel II
C L = 20 pF R L ≥ 1 MΩ
Channel II
C L ≤ 20 pF
50 Ω 100 Ω
50 Ω 1 kΩ
95 10843
95 10804
Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Test Circuit, Saturated Operation
TCMT110. Series
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Vishay Semiconductors
IF
0
tp t
IC
100 %
90 %
10 %
0
tr
td tf t
ts
t on t off
tp Pulse duration ts Storage time
td Delay time tf Fall time
tr Rise time t off (= ts + tf) Turn-off time
t on (= td + tr) Turn-on time 96 11698
300 1000
Coupled device
IF - Forward Current (mA)
250
100
200
Phototransistor
150 10
IR-diode
100
1
50
0 0.1
0 40 80 120 0 0.4 0.8 1.2 1.6 2.0
96 11700 Tamb - Ambient Temperature (°C) 96 11862 VF - Forward Voltage (V)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature Fig. 5 - Forward Current vs. Forward Voltage
TCMT110. Series
www.vishay.com
Vishay Semiconductors
CTRrel - Relative Current Transfer Ratio
2.0 100
VCE = 5 V 20 mA
5 mA
1.0
1 2 mA
0.5
1 mA
0 0.1
- 25 0 25 50 75 0.1 1 10 100
95 11025 Tamb - Ambient Temperature (°C) 95 10985 VCE - Collector Emitter Voltage (V)
Fig. 6 - Relative Current Transfer Ratio vs. Fig. 9 - Collector Current vs. Collector Emitter Voltage
Ambient Temperature
10 000 1.0
ICEO - Collector Dark Current,
VCE = 20 V 20 % used
IF = 0 VCEsat - Collector Emitter
Saturation Voltage (V)
0.8
with Open Base (nA)
1000 CTR = 50 %
used
0.6
100
0.4
10
0.2
10 % used
1 0
0 25 50 75 100 1 10 100
95 11026 Tamb - Ambient Temperature (°C) 95 11028 IC - Collector Current (mA)
100 1000
CTR - Current Transfer Ratio (%)
VCE = 5 V
IC - Collector Current (mA)
VCE = 5 V
10
100
10
0.1
0.01 1
0.1 1 10 100 0.1 1 10 100
95 11027 IF - Forward Current (mA) 95 11029 IF - Forward Current (mA)
Fig. 8 - Collector Current vs. Forward Current Fig. 11 - Current Transfer Ratio vs. Forward Current
TCMT110. Series
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Vishay Semiconductors
50 10
ton/toff - Turn-On/Turn-Off Time (µs)
30 6
toff
toff
20 4
10 2
ton
0 0
0 5 10 15 20 0 2 4 6 8
95 11031 IF - Forward Current (mA) 95 11030 IC - Collector Current (mA)
Fig. 12 - Turm-on/off Time vs. Forward Current Fig. 13 - Turn-on/off Time vs. Collector Current
2.8 max.
2.1 max.
+ 0.3
0.15 +- 0.10
0.05
0.45 ± 0.1 0.7 - 0.4
1.27 nom.
4 3
Possible footprint
0.9
1.27
7.6
1 2
technical drawings
Pin no. 1 identification according to DIN
specifications
16283
MT1100
V YWW M 68
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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