SDP06S60

SDT06S60

Silicon Carbide Schottky Diode thinQ!¥ SiC Schottky Diode

• Worlds first 600V Schottky diode
• Revolutionary semiconductor Product Summary
VRRM 600 V
material - Silicon Carbide
Qc 21 nC
• Switching behavior benchmark
• No reverse recovery
IF 6 A

• No temperature influence on PG-TO220-2-2. P-TO220

the switching behavior

• Ideal diode for Power Factor
Correction up to 1200W 1)
• No forward recovery

Type Package Ordering Code Marking Pin 1 Pin 2 Pin 3

SDP06S60 P-TO220-3 Q67040-S4371 D06S60 n.c. C A
SDT06S60 PG-TO220-2-2. Q67040-S4446 D06S60 C A

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit
Continuous forward current, TC=100°C IF 6 A
RMS forward current, f=50Hz IFRMS 8.4
Surge non repetitive forward current, sine halfwave IFSM 21.5
TC=25°C, tp=10ms

Repetitive peak forward current IFRM 28

Tj=150°C, TC=100°C, D=0.1

Non repetitive peak forward current IFMAX 60

tp=10µs, TC=25°C

i 2t value, TC=25°C, tp=10ms ³i2dt 2.3 A²s

Repetitive peak reverse voltage VRRM 600 V
Surge peak reverse voltage VRSM 600
Power dissipation, TC=25°C Ptot 57.6 W
Operating and storage temperature Tj , Tstg -55... +175 °C

Rev. 2.4 Page 1 2008-06-02

 SDP06S60
SDT06S60
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - - 2.6 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Diode forward voltage VF V
IF=6A, Tj=25°C - 1.5 1.7
IF=6A, Tj=150°C - 1.7 2.1
Reverse current IR µA
V R=600V, T j=25°C - 20 200
V R=600V, T j=150°C - 50 1000

1CCM, V = 85VAC, T = 150°C, T =100°C, η = 93%, ∆ I = 30%

IN j C IN
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.

Rev. 2.4 Page 2 2008-06-02

 SDP06S60
SDT06S60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Total capacitive charge Qc - 21 - nC
V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C
Switching time trr - n.a. - ns
V R=400V, IF=6A, diF/dt=200A/µs, T j=150°C

Total capacitance C pF
V R=0V, T C=25°C, f=1MHz - 300 -
V R=300V, T C=25°C, f=1MHz - 20 -
V R=600V, T C=25°C, f=1MHz - 15 -

Rev. 2.4 Page 3 2008-06-02

 SDP06S60
SDT06S60
1 Power dissipation 2 Diode forward current
Ptot = f (TC) IF = f (TC)
parameter: Tj≤175 °C
60 6.5
W A

50 5.5

5
45
4.5
40
Ptot

IF
35
3.5
30
3
25
2.5
20
2
15
1.5
10 1

5 0.5

0 0
0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 °C 180
TC TC

3 Typ. forward characteristic 4 Typ. forward power dissipation vs.

IF = f (VF) average forward current
parameter: Tj , tp = 350 µs PF(AV)=f(IF) TC=100°C, d = tp/T
12 28
A W
150°C d=0.1
125°C 24 d=0.2
10
100°C d=0.5
25°C 22
9 d=1
-40°C 20
PF(AV)

8
18
IF

7 16

6 14

5 12

10
4
8
3
6
2
4
1 2

0 0
0 0.5 1 1.5 V 2.5 0 2 4 6 8 A 12
VF IF(AV)

Rev. 2.4 Page 4 2008-06-02

 SDP06S60
SDT06S60
5 Typ. reverse current vs. reverse voltage 6 Transient thermal impedance
I R=f(VR) ZthJC = f (t p)
parameter : D = t p/T
2
10 10 1 SDP06S60

µA K/W

10 1 150°C 10 0
125°C
100°C

ZthJC
25°C
10 0 10 -1
IR

D = 0.50
-1 -2
10 10 0.20
0.10
0.05
-2 -3
single pulse 0.02
10 10
0.01

10 -3 10 -4 -7 -6 -5 -4 -3 -2 0
100 150 200 250 300 350 400 450 500 V 600 10 10 10 10 10 10 s 10
VR tp

7 Typ. capacitance vs. reverse voltage 8 Typ. C stored energy

C= f(V R) EC=f(V R)
parameter: TC = 25 °C, f = 1 MHz
250 3.5

µJ
pF

2.5
EC

150
C

1.5
100

50
0.5

0 0 1 2 3 0
10 10 10 V 10 0 100 200 300 400 V 600
VR VR

Rev. 2.4 Page 5 2008-06-02

 SDP06S60
SDT06S60
9 Typ. capacitive charge vs. current slope
Q c=f(diF /dt)
parameter: Tj = 150 °C
22
nC
IF*2
IF
18

16 IF*0.5

14
Qc

12

10

0
100 200 300 400 500 600 700 800 A/µs 1000
diF /dt

Rev. 2.4 Page 6 2008-06-02

 SDP06S60
SDT06S60

P-TO220-3-1, P-TO220-3-21

Rev. 2.4 Page 7 2008-06-02

 SDP06S60
SDT06S60

PG-TO-220-2-2

Rev. 2.4 Page 8 2008-06-02

 SDP06S60
SDT06S60

Rev. 2.4 Page 9 2008-06-02