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Technical Data
Data Sheet N0102, Rev. B
SK34 SCHOTTKY RECTIFIER
Features
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters,
Free Wheeling, and Polarity Protection Applications
This is a Pb - Free device
All SMC parts are traceable to the wafer lot
SMC Additional testing can be offered upon request
Maximum Ratings:
Characteristics Symbol Condition Max. Units
Peak Repetitive Reverse Voltage VRRM -
Working Peak Reverse Voltage VRWM 40 V
DC Blocking Voltage VR
50% duty cycle @TC=105°C, rectangular
Average Rectified Forward Current IF (AV) 3 A
wave form
Peak One Cycle Non-Repetitive
IFSM 8.3ms, Half Sine pulse, Tc = 25 C 75 A
Surge Current
Electrical Characteristics:
Characteristics Symbol Condition Typ. Max. Units
Forward Voltage Drop* VF1 @ 3A, Pulse, TJ = 25 C 0.58 0.63 V
VF1 @ 3A, Pulse, TJ = 125 C 0.50 0.57 V
Reverse Current* IR1 @VR = rated VR, TJ = 25 C 0.01 50 uA
IR2 @VR = rated VR, TJ = 100 C - 10 mA
Junction Capacitance CT @VR = 5V, TC = 25 C, fSIG = 1MHz 45 150 pF
Series Inductance LS Measured lead to lead 5 mm from
8.0 - nH
package body
Voltage Rate of Change dv/dt - - 10,000 V/s
* Pulse width < 300 µs, duty cycle < 2%
Thermal-Mechanical Specifications:
Millimeters Inches
SYMBOL
Min. Max. Min. Max.
Millimeters
SYMBOL
Min. Max.
A 5.90 6.10
B 8.20 8.40
C 2.40 2.60
d 1.40 1.60
E 1.40 1.60
F 7.60 7.70
P 7.90 8.10
P0 3.90 4.10
P1 3.90 4.10
T - 0.600
W 15.80 16.20