DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2159
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING

The 2SK2159 is an N-channel vertical type MOS FET featur- PACKAGE DIMENSIONS
ing an operating voltage as low as 1.5 V. Because it can be (in millimeters)
driven on a low voltage and it is not necessary to consider
4.5 ± 0.1
driving current, the 2SK2159 is suitable for driving actuators of 1.6 ± 0.2 1.5 ± 0.1
low-voltage portable systems such as headphone stereo sets

4.0 ± 0.25
2.5 ± 0.1
and camcorders.
2
1 3

0.8 MIN.
FEATURES 0.42 0.42 ± 0.06
± 0.06 0.47
• Capable of drive gate with 1.5 V 1.5 ± 0.06
0.41+0.03
–0.05
3.0
• Small RDS(on)
RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A
RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A EQUIVALENT CIRCUIT
2

Internal diode
3
Gate protection
diode
PIN CONNECTION
1
1. Source (S)
2. Drain (D)

Marking: NW 3. Gate (G)

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT

Drain to Source Voltage VDSS VGS = 0 60 V

Gate to Source Voltage VGSS VDS = 0 ±14 V

Drain Current (DC) ID(DC) ±2.0 A

Drain Current (pulse) ID(pulse) PW ≤ 10 ms, ±4.0 A

Duty Cycle ≤ 50 %

Total Power Dissipation PT Mounted on 16 cm2 × 0.7 mm ceramic substrate. 2.0 W

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C

Document No. D11235EJ2V0DS00 (2nd edition)

Date Published June 1996 P
Printed in Japan
© 1996
 2SK2159

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain Cut-off Current IDSS VDS = 60 V, VGS = 0 1.0 µA

Gate Leakage Current IGSS VGS = ±14 V, VDS = 0 ±10 µA
Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 0.5 0.9 1.1 V

Forward Transfer Admittance | yfs | VDS = 10 V, ID = 1.0 A 0.4 S

Drain to Source On-state Resistance RDS(on)1 VGS = 1.5 V, ID = 0.1 A 0.55 0.7 Ω

Drain to Source On-state Resistance RDS(on)2 VGS = 2.5 V, ID = 1.0 A 0.27 0.5 Ω

Drain to Source On-state Resistance RDS(on)3 VGS = 4.0 V, ID = 1.0 A 0.22 0.3 Ω

Input Capacitance Ciss VDS = 10 V, VGS = 0, 319 pF

Output Capacitance Coss f = 1.0 MHz 109 pF

Reverse Transfer Capacitance Crss 22 pF

Turn-On Delay Time td(on) VDD = 25 V, ID = 1.0 A 38 ns

Rise Time tr VGS(on) = 3 V, RG = 10 Ω 128 ns

RL = 25 Ω
Turn-Off Delay Time td(off) 237 ns

Fall Time tf 130 ns

2
 2SK2159

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA FORWARD BIAS SAFE OPERATING AREA
100 10 Single pulse

5
80 1
dT - Derating Factor - %

ID - Drain Current - A
s
2 10
60 m
s
1 PW
=
40 DC 10
0.5 0
m
s
20
0.2

0.1
0 30 60 90 120 150 1 2 5 10 20 50 100
TA - Ambient Temperature - ˚C VDS - Drain to Source Voltage - V

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE TRANSFER CHARACTERISTICS
5 10
VDS = 10 V

4
1
ID - Drain Current - A

ID - Drain Current - A
V
5 V V
3. 3.0 .5
V 2 V
3 7 0
2. TA = 75 °C
1.5 V 0.1 25 ° C
–25 °C
2

0.01
1
VGS = 1.0 V

0.001
0 0.4 0.8 1.2 1.6 2.0 0 1 2 3
VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE

RDS(on) - Drain to Source On-State Resistance - Ω

DRAIN CURRENT vs. DRAIN CURRENT

10
VGS = 1.5 V
|yfs| - Forward Transfer Admittance - S

VDS = 10 V 1.4

1.2
TA = –25 °C
1 25 °C 1

75 °C 0.8
TA = 75 °C
0.6 25 °C
0.1 –25 °C
0.4

0.2

0.01 0
0.001 0.01 0.1 1 0.001 0.01 0.1 1 10
ID - Drain Current - A ID - Drain Current - A

3
 2SK2159

DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE

RDS(on) - Drain to Source On-State Resistance - Ω

RDS(on) - Drain to Source On-State Resistance - Ω

vs. DRAIN CURRENT vs. DRAIN CURRENT

1.4 VGS = 2.5 V 1.4 VGS = 4.0 V

1.2 1.2

1.0 1.0

0.8 0.8

0.6 0.6

0.4 TA = 75 °C 0.4 TA = 75 °C
25 °C 25 °C
0.2 –25 °C 0.2 –25 °C
0 0
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
ID - Drain Current - A ID - Drain Current - A

DRAIN TO SOURCE ON-STATE RESISTANCE CAPACITANCE vs.

RDS(on) - Drain to Source On-State Resistance - Ω

vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE VOLTAGE

1 1 000

Ciss, Coss, Crss - Capacitance - pF

500
0.8
Ciss

200
0.6
100
0.4 Coss
50
ID = 2 A
0.2
ID = 1 A 20
VGS = 0 Crss
f = 1 MHz
10
0 2 4 6 8 10 12 14 1 2 5 10 20 50 100
VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V

SOURCE TO DRAIN DIODE

SWITCHING CHARACTERISTICS FORWARD VOLTAGE
1 000 10
td(on), tr, td(off), tf - Switching Time - ns

ISD - Source to Drain Current - A

500
1
td(off)
200 tr
tf
100 0.1

50 td(on)

0.01
VDD = 25 V
20
VGS(on) = 3 V
RG = 10 Ω
10 0.001
0.1 0.2 0.5 1 2 5 10 0.4 0.6 0.8 1.0 1.2
ID - Drain Current - A VSD - Source to Drain Voltage - V

4
 2SK2159

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system TEI-1202

Quality grade on NEC semiconductor devices IEI-1209

Semiconductor device mounting technology manual C10535E

Guide to quality assurance for semiconductor devices MEI-1202

Semiconductor selection guide X10679E

5
 2SK2159

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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11