DOKUZ EYLUL UNIVERTSITY

DEPARTMENT OF ELECTRICAL &

ELECTRONICS ENGINEERING

EED 2012 LAB

ANALOG ELECTRONICS

EXPERIMENT 1
COMMON SOURCE TRANSISTOR
AMPLIFIER

Std. No. Name & Surname:

1________ _______________
2________ _______________
3________ _______________

Group No :_____________
Submitted to:_____________
Date :_____________

Spring, 2019
OBJECTIVE

To measure DC and AC voltages in common-source amplifier. To obtain measured values of

voltage amplification (Av ) and frequency response.

EQUIPMENT REQUIRED

(1) BS170 N-type MOSFET

(1) 3.3kΩ

(2) 10kΩ

(3) 1MΩ

(1) 1MΩ pot

(3) 100µF

RESUME OF THEORY

Three t e r m i n a l devices can be used to implement a controlled source. This property makes
them suitable to be used in amplifiers. A transistor is an example of a device of this kind. In
particular, MOSFET (metal-oxide-semiconductor field-effect transistor) is a widely used three
terminal device.

The working principle of a MOSFET amplifier is controlling the current flowing through drain
terminal b y setting the gate-to-source voltage. This property can be achieved by operating
the MOSFET in the saturation (active) region.

Figure 1

The common source is the most commonly used MOSFET amplifier. The name “common
source” comes from the fact that when the source terminal is grounded, it becomes a common
terminal for both drain and source terminals.
In order to cancel the nonlinear relationship of VGS versus ID biasing techniques are used. In this
experiment voltage-divider bias technique will be implemented. In voltage divider bias (see Figure1),
VG and VGS can be found using Equation 1.

(1)

Transconductance of a transistor is an important characteristic of the transistor. Transconduc- tance

can be explained simply as the deviation of drain current with respect to the deviation of gate voltage.
With the Equation 2 it can be seen that the transconductance depends on the bias current ID .

(2)

The gain Av can be calculated as:

Av = −gm (RD ║ RL ║ ro ) ≈ −gm (RD ║ RL ) (3)

under the condition ro >> RD ║ RL.

Figure 2 Circuit to measure Vt

PROCEDURE

Part 1. Measuring Vt

a. Construct the network of Fig. 2 using the BS170 n-type MOSFET transistor. Set your
multimeter to its most sensitive range. Use the following components:

• R1 = 2M Ω (series connection of two 1M Ω resistors)

• R2 = 1M Ω pot
• RD = 10kΩ
• RS = 3.3kΩ
Set VDD =15V.

b. Slightly change the DC voltage applied to the gate of the MOSFET from 0V by changing the
 pot resistance value. Note the voltage when the current ID is nonzero.

VT (measured) =

Part 2. DC Analysis

a. Construct the network of Figure 1 using the BS170 n-type MOSFET transistor. Use
the following resistances and capacitances (VDD =15V):

• R1 = 2M Ω (series connection of two 1M Ω resistors)

• R2 = 1M Ω
• RD = 10kΩ
• RS = 3.3kΩ
• RL = 10kΩ
• C1 = C2 = C3 = 100µF

b. Measure the DC values of VG , VS , VD , ID , VGS and VDS . Insert the results in Table1.

c. Calculate the transconductance (gm ) using measured values of ID , VGS and VT .

(Hint: Use Equation 2).

gm(calculated) =

Part 3. AC Analysis

a. Calculate the voltage gain of Fig. 1 using Equation 3.

Av (calculated)=
b. Apply 10mV peak-to-peak sinusoidal signal (Vin ) at 1kHz to the circuit of Fig. 1. Record
your measurement in Fig. 3.

Volt/div=
time/div=
 Figure 3

c. What is the measured voltage gain?

Av (measured)=

d. Increase V in with 10mV steps. Try to find the level of Vin where the output
waveform distorts. Record the waveform at this instant in Fig. 4.

Volt/div=
time/div=

Figure 4
Compare the calculated and measured values of voltage gain? Comment briefly.

Why are C1 and C3 capacitors are used in the Figure 1?

Does source resistor reduce or increase the voltage gain? Why?