Engineering Report

Introduction

This Engineering Report consists of three Sections that are the Objective 1, 2 and 3. The main objective
of the Report is to get a basic understanding of the integrated op-amp using 5 BJT transistors. Perform
the basic analysis on this op-amp, calculate its parameters and analyze its performance in terms of its
voltage gain, its limitation and its improvement. To accomplish this task simulation of the basic circuit of
the op-amp was performed on NI-MULTISIM using the parameters of the assignment. Then its basic
parameters were calculated like Voltage gain, Dc and Ac characteristics DC load line etc. Then finally
some improvements were made in the given circuit and its performance was improved and then its
parameters were calculated again and it was compared with the previous design to judge whether it
contains any anomaly or not. The whole project gave a good understanding of the basic working of the
Op-Amp using the BJT Transistors and its various parameters and its calculation.

1.1 Objective 1
The main building blocks of the given circuit in the assignment are the 5 transistors. It acts just like an op-
amplifier. The function of the transistor is to amplify the signal or it can be used as a switch. It works in 3
modes .This 5 transistors works in the configuration of a op-amp which function is to amplify the input
signal. In this op-amp circuit a differential pair is used between transistor 2 transistor 3. The building
blocks of the circuit and their functions are as follows

Q1 is used for taking input

Q2 is used as an amplifier

Q3 is used as a current driven device

Q4 and Q5 are used as amplifier

R1 is used as a collector resistance Rc of Transistor Q4

R2 is used as a collector resistance Rc of Transistor Q2

R3 is used as a emitter resistance Rc of Transistor Q3

R4 is used as a collector resistance Rc of Transistor Q3 and emitter resistance Re of transistor Q5

R5 is used as a emitter resistance Re of Transistor Q2

R6 is used as a emitter resistance Re of Transistor Q1

V1 is the input voltage of the circuit

DC Analysis
The equations of the DC analysis are as follows for all five Transistors

For Transistor 1 Q1

𝑉𝑖𝑛 = 𝐼𝑏 𝑅𝑏 + 𝐼𝑒 𝑅𝑒

𝑉𝑖𝑛
𝐼𝑒 =
𝑅𝑒

𝐼𝑒 = 𝐼𝑐 + 𝐼𝑏

𝑉𝑐 = 𝑉𝑐𝑐 − 𝐼𝑐 𝑅𝑐

𝑉𝑐𝑐
𝑃 = 𝑉𝑐𝑐
4𝑅𝑒

𝑉𝑜𝑢𝑡)
𝐴𝑣 =
𝑉𝑖𝑛

𝐴𝑣 (𝑖𝑛 𝑑𝑏) = 20𝐿𝑜𝑔(𝐴𝑣 )

Now in the question a=400

𝑉𝑖𝑛 = 400𝑉𝐼𝑚𝑠

𝐼𝑖𝑛 = 1.4𝜇𝐴(𝐼𝑛𝑠)

At Q1 (Transistor1)

𝑉𝑖𝑛 = 𝐼𝑏 𝑅𝑏 + 𝐼𝑒 𝑅𝑒

Ib=0 A so

𝑉𝑖𝑛 = 𝐼𝑒 𝑅𝑒
 𝑉𝑖𝑛 50 × 10−3
𝐼𝑒 = = = 5 × 10−4
𝑅𝑒 102

𝐼𝑒 = 500𝜇𝐴

𝐼𝑒 + 𝐼𝑐

𝐼𝑒 = 𝐼𝑐 = 500𝜇𝐴

𝑉𝑐 = 𝑉𝑜𝑢𝑡 = 𝑉𝑐𝑐

𝑉𝑐 = 15 𝑉

2
𝑉𝐶𝐶 15×15
Quiescent Power =𝑃 = =
4𝑅𝑒 4×100

𝑃 = 5.62𝑚𝑊

𝑉𝑜𝑢𝑡) 15
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 = = = 300 = 41.9𝑑𝑏
𝑉𝑖𝑛 50 × 10−3

𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 (𝑑𝑏) = 49.54𝑑𝑏

OutputImpedance =
𝑅𝑜𝑢𝑡 = 1 + (𝑃. 𝛾𝜖 = 𝑅𝑒 )

𝑉1 26𝑚𝑉
𝑟𝑒 = = = 52𝑜ℎ𝑚
𝐼𝑒 0.5𝑚𝐴

𝑅𝑜𝑢𝑡 = 1 + (5.62 × 10−3 × 52 + 100) = 101.29 𝑜ℎ𝑚

Now we will calculate the input impedance as

𝑉𝑐 15
𝑅𝑖𝑛 = =
𝐼𝑐 500 × 10−6

𝐴𝑣
𝐶𝑀𝑀𝑅 =
𝐴𝐶𝑀

𝑅𝑖𝑛 = 0.3𝑀𝑜ℎ𝑚

1
𝐴𝑐𝑚 = +
2𝑔𝑚 𝑅𝑖𝑛
 𝐼𝑐 0.5𝑚𝐴
𝑔𝑚 = = = 0.019𝐴𝜏
𝑉𝑇 26𝑚𝑉

1
𝐴𝑐𝑚 = + = 0.00086
2 × 0.019 × 30000

𝐴𝑣 300
𝐶𝑀𝑀𝑅 = = = 348837
𝐴𝐶𝑀 8.6 × 10−4

𝐶𝑀𝑀𝑅(𝑑𝑏) = 110.85𝑑𝑏

For Transistor 2 Q2

𝑉𝑖𝑛 = 𝐼𝑏 𝑅𝑏 + 𝐼𝑒 𝑅𝑒

𝑉𝑖𝑛
𝐼𝑒 =
𝑅𝑒

𝐼𝑒 = 𝐼𝑐 + 𝐼𝑏

𝑉𝑐 = 𝑉𝑐𝑐 − 𝐼𝑐 𝑅𝑐

𝑉𝑐𝑐
𝑃 = 𝑉𝑐𝑐
4𝑅𝑒

𝑉𝑜𝑢𝑡)
𝐴𝑣 =
𝑉𝑖𝑛

𝐴𝑣 (𝑖𝑛 𝑑𝑏) = 20𝐿𝑜𝑔(𝐴𝑣 )

Now in the question a=400

𝑉𝑖𝑛 = 400𝑉𝐼𝑚𝑠

𝐼𝑖𝑛 = 1.4𝜇𝐴(𝐼𝑛𝑠)

At Q2

𝑉𝑖𝑛 = 𝐼𝑏 𝑅𝑏 + 𝐼𝑒 𝑅𝑒
Ib=0 A so

𝑉𝑖𝑛 = 𝐼𝑒 𝑅𝑒

𝑉𝑖𝑛 50 × 10−3
𝐼𝑒 = = = 500𝜇𝐴
𝑅𝑒 100

𝐼𝑒 = 500𝜇𝐴

𝐼𝑒 + 𝐼𝑐

𝐼𝑒 = 𝐼𝑐 = 500𝜇𝐴

𝑉𝑐 = 𝑉𝑜𝑢𝑡 = 𝑉𝑐𝑐 − 𝐼𝐶 𝑅𝐶 = 15 − 500 × 10−6 × 4.7 × 103

𝑉𝑐 = 12.65 𝑉

2
𝑉𝐶𝐶 15×15
Quiescent Power =𝑃 = =
4𝑅𝑒 4×100

𝑃 = 5.62𝑚𝑊

𝑉𝑜𝑢𝑡) 15 − 0.0005 × 4700

𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 = = = 253 = 48.06𝑑𝑏
𝑉𝑖𝑛 50 × 10−3

𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 (𝑑𝑏) = 48.06𝑑𝑏

OutputImpedance =
𝑅𝑜𝑢𝑡 = 1 + (𝑃. 𝛾𝜖 = 𝑅𝑒 )

𝑉1 26𝑚𝑉
𝑟𝑒 = = = 52𝑜ℎ𝑚
𝐼𝑒 0.5𝑚𝐴

𝑅𝑜𝑢𝑡 = 1 + (5.62 × 10−3 × 52 + 100) = 101.29 𝑜ℎ𝑚

Now we will calculate the input impedance as

𝑉𝑐 12.65
𝑅𝑖𝑛 = = = 25300 𝑜ℎ𝑚
𝐼𝑐 5 × 10−4

𝐴𝑣
𝐶𝑀𝑀𝑅 =
𝐴𝐶𝑀

𝑅𝑖𝑛 = 0.253𝑀𝑜ℎ𝑚
 1
𝐴𝑐𝑚 = +
2𝑔𝑚 𝑅𝑖𝑛

𝐼𝑐 0.5𝑚𝐴
𝑔𝑚 = = = 0.019𝐴𝜏
𝑉𝑇 26𝑚𝑉

1
𝐴𝑐𝑚 = + = 0.001
2 × 0.019 × 25300

𝐴𝑣 253
𝐶𝑀𝑀𝑅 = = = 253000
𝐴𝐶𝑀 1 × 10−3

𝐶𝑀𝑀𝑅(𝑑𝑏) = 108.06𝑑𝑏

For Transistor 3 Q3

At Q3

𝑉𝑖𝑛 = 𝐼𝑏 𝑅𝑏 + 𝐼𝑒 𝑅𝑒

Ib=0 A so

𝑉𝑖𝑛 = 𝐼𝑒 𝑅𝑒

𝑉𝑖𝑛 50 × 10−3
𝐼𝑒 = = = 33.33𝜇𝐴
𝑅𝑒 1500

𝐼𝑒 = 33.33𝜇𝐴

𝐼𝑒 + 𝐼𝑐

𝐼𝑒 = 𝐼𝑐 = 33.33𝜇𝐴

𝑉𝑐 = 𝑉𝑜𝑢𝑡 = 𝑉𝑐𝑐 − 𝐼𝐶 𝑅𝐶 = 15 − 3.33 × 10−5 × 15 × 103

𝑉𝑐 = 14.505 𝑉

2
𝑉𝐶𝐶 15×15
Quiescent Power =𝑃 = =
4𝑅𝑒 4×1500

𝑃 = 17.5𝑚𝑊

𝑉𝑜𝑢𝑡) 14.505
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 = = = 290 = 49.25𝑑𝑏
𝑉𝑖𝑛 50 × 10−3
 𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 (𝑑𝑏) = 49.25𝑑𝑏

OutputImpedance =
𝑅𝑜𝑢𝑡 = 1 + (𝑃. 𝛾𝜖 = 𝑅𝑒 )

𝑉1 26𝑚𝑉
𝑟𝑒 = = = 787.8𝑜ℎ𝑚
𝐼𝑒 0.03𝑚𝐴

𝑅𝑜𝑢𝑡 = 1 + (17.5 × 10−3 × 787.8 + 1500) = 1514.7 𝑜ℎ𝑚

Now we will calculate the input impedance as

𝑉𝑐 14.505
𝑅𝑖𝑛 = = = 0.439 𝑜ℎ𝑚
𝐼𝑐 3.33 × 10−5

𝐴𝑣
𝐶𝑀𝑀𝑅 =
𝐴𝐶𝑀

1
𝐴𝑐𝑚 = +
2𝑔𝑚 𝑅𝑖𝑛

𝐼𝑐 0.03𝑚𝐴
𝑔𝑚 = = = 0.001𝐴𝜏
𝑉𝑇 26𝑚𝑉

1
𝐴𝑐𝑚 = + = 0.00098
2 × 0.001 × 439544

𝐴𝑣 290
𝐶𝑀𝑀𝑅 = = = 295918
𝐴𝐶𝑀 9.8 × 10−4

𝐶𝑀𝑀𝑅(𝑑𝑏) = 109.42𝑑𝑏

For Transistor 4 Q4

At Q4

𝑉𝑖𝑛 = 𝐼𝑏 𝑅𝑏 + 𝐼𝑒 𝑅𝑒

Ib=0 A so

𝑉𝑖𝑛 = 𝐼𝑒 𝑅𝑒

𝑉𝑖𝑛 50 × 10−3
𝐼𝑒 = = = 3.33𝜇𝐴
𝑅𝑒 1500
 𝐼𝑒 = 3.33𝜇𝐴

𝐼𝑒 + 𝐼𝑐

𝐼𝑒 = 𝐼𝑐 = 3.33𝜇𝐴

𝑉𝑐 = 𝑉𝑜𝑢𝑡 = 𝑉𝑐𝑐 − 𝐼𝐶 𝑅𝐶 = 15 − 3.33 × 10−6 × 22 × 103

𝑉𝑐 = 14.92 𝑉

𝑉2
𝐶𝐶 15×15
Quiescent Power =𝑃 = 4𝑅𝑒 = 4×15000

𝑃 = 3.75𝑚𝑊

𝑉𝑜𝑢𝑡) 14.92
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 = = = 298.4 = 49.49𝑑𝑏
𝑉𝑖𝑛 50 × 10−3

𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 (𝑑𝑏) = 49.49𝑑𝑏

OutputImpedance =
𝑅𝑜𝑢𝑡 = 1 + (𝑃. 𝛾𝜖 = 𝑅𝑒 )

𝑉1 26𝑚𝑉
𝑟𝑒 = = = 7878𝑜ℎ𝑚
𝐼𝑒 0.0033𝑚𝐴

𝑅𝑜𝑢𝑡 = 1 + (3.75 × 10−3 × 7878 + 15000) = 15030 𝑜ℎ𝑚

Now we will calculate the input impedance as

𝑉𝑐 14.92
𝑅𝑖𝑛 = = = 4.480480 𝑜ℎ𝑚
𝐼𝑐 3.33 × 10−6

𝐴𝑣
𝐶𝑀𝑀𝑅 =
𝐴𝐶𝑀

1
𝐴𝑐𝑚 = +
2𝑔𝑚 𝑅𝑖𝑛

𝐼𝑐 0.03𝑚𝐴
𝑔𝑚 = = = 1.26 × 10−4 𝐴𝜏
𝑉𝑇 26𝑚𝑉

298.4
𝐴𝑐𝑚 =
8.79 × 10−4
 𝐶𝑀𝑀𝑅 = 339476.6

𝐶𝑀𝑀𝑅(𝑑𝑏) = 110.6𝑑𝑏

For Transistor 5 Q5

At Q5

𝑉𝑖𝑛 = 𝐼𝑏 𝑅𝑏 + 𝐼𝑒 𝑅𝑒

Ib=0 A so

𝑉𝑖𝑛 = 𝐼𝑒 𝑅𝑒

𝑉𝑖𝑛 50 × 10−3
𝐼𝑒 = = = 3.3350𝜇𝐴
𝑅𝑒 1500

𝐼𝑒 = 3.33𝜇𝐴

𝐼𝑒 + 𝐼𝑐

𝐼𝑒 = 𝐼𝑐 = 3.33𝜇𝐴

𝑅𝐶 = 0

𝑉𝑐 = 15 𝑉

2
𝑉𝐶𝐶 15×15
Quiescent Power =𝑃 = =
4𝑅𝑒 4×1500

𝑃 = 3.75𝑚𝑊

𝑉𝑜𝑢𝑡) 15
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 = = = 300 = 49.54𝑑𝑏
𝑉𝑖𝑛 50 × 10−3

𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 (𝑑𝑏) = 49.54𝑑𝑏

OutputImpedance =
𝑅𝑜𝑢𝑡 = 1 + (𝑃. 𝛾𝜖 = 𝑅𝑒 )

𝑉1 26𝑚𝑉
𝑟𝑒 = = = 7878𝑜ℎ𝑚
𝐼𝑒 0.03𝑚𝐴

𝑅𝑜𝑢𝑡 = 1 + (3.75 × 10−3 × 7878 + 1500) = 15030 𝑜ℎ𝑚

Now we will calculate the input impedance as

𝑉𝑐 15
𝑅𝑖𝑛 = = = 4504504 𝑜ℎ𝑚 = 4.5𝑀𝑜ℎ𝑚
𝐼𝑐 3.33 × 10−6

𝐴𝑣
𝐶𝑀𝑀𝑅 =
𝐴𝐶𝑀

1
𝐴𝑐𝑚 = +
2𝑔𝑚 𝑅𝑖𝑛

𝐼𝑐 0.03𝑚𝐴
𝑔𝑚 = = = 1.269 × 10−4 𝐴𝜏
𝑉𝑇 26𝑚𝑉

1
𝐴𝑐𝑚 = + = 8.75 × 10−4
2 × 1.269 × 10−4 × 4.5 × 106

𝐴𝑣 1
𝐶𝑀𝑀𝑅 = = = 342630
𝐴𝐶𝑀 8.75 × 10−4

𝐶𝑀𝑀𝑅(𝑑𝑏) = 110.69𝑑𝑏

AC Analysis
The equations of the DC analysis are as follows for all five Transistors

Vin = Ib. rbe + Ie. RE And Vout = Vcc - Ic. RC

For Transistor 1 Q1

𝑅𝑖𝑛
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 =
𝑅𝑜𝑢𝑡

𝑅𝑖𝑛 = (1 + 𝛽)(𝑟𝑒1 + 𝑅1 )

𝑉𝑇 50 × 10−3
𝑟𝑒1 = =
𝐼𝑐 264 × 10−6

𝑅𝑜𝑢𝑡 = 100 𝑜ℎ𝑚

𝑉𝑖𝑛 (𝑝−𝑝)
𝑅𝑖𝑛 =
𝐼

Substituting the values we get

 𝑅𝑖𝑛
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 = = 49.7𝑑𝑏
𝑅𝑜𝑢𝑡

For Transistor 2 Q2

𝑅𝑖𝑛
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 =
𝑅𝑜𝑢𝑡

𝑅𝑖𝑛 = (1 + 𝛽)(𝑟𝑒2 + 𝑅2 )

𝑉𝑇 50 × 10−3
𝑟𝑒2 = =
𝐼𝑐 263 × 10−6

𝑅𝑜𝑢𝑡 = 100 𝑜ℎ𝑚

𝑉𝑖𝑛 (𝑝−𝑝)
𝑅𝑖𝑛 =
𝐼

Substituting the values we get

𝑅𝑖𝑛
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 = = 48.3𝑑𝑏
𝑅𝑜𝑢𝑡

For Transistor 3 Q3

𝑅𝑖𝑛
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 =
𝑅𝑜𝑢𝑡

𝑅𝑖𝑛 = (1 + 𝛽)(𝑟𝑒2 + 𝑅2 )

𝑉𝑇 50 × 10−3
𝑟𝑒3 = =
𝐼𝑐 786 × 10−6

𝑅𝑜𝑢𝑡 = 15𝑘 𝑜ℎ𝑚

𝑉𝑖𝑛 (𝑝−𝑝)
𝑅𝑖𝑛 =
𝐼

Substituting the values we get

 𝑅𝑖𝑛
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 = = 49.9𝑑𝑏
𝑅𝑜𝑢𝑡

For Transistor 4 Q4

𝑅𝑖𝑛
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 =
𝑅𝑜𝑢𝑡

𝑅𝑖𝑛 = (1 + 𝛽)(𝑟𝑒4 + 𝑅4 )

𝑉𝑇 50 × 10−3
𝑟𝑒4 = =
𝐼𝑐 1.05 × 10−6

𝑅𝑜𝑢𝑡 = 50 𝑜ℎ𝑚

𝑉𝑖𝑛 (𝑝−𝑝)
𝑅𝑖𝑛 =
𝐼

Substituting the values we get

𝑅𝑖𝑛
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 = = 46.4𝑑𝑏
𝑅𝑜𝑢𝑡

For Transistor 5 Q5

𝑅𝑖𝑛
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 =
𝑅𝑜𝑢𝑡

𝑅𝑖𝑛 = (1 + 𝛽)(𝑟𝑒5 + 𝑅5 )

𝑉𝑇 50 × 10−3
𝑟𝑒5 = =
𝐼𝑐 501 × 10−9

𝑅𝑜𝑢𝑡 = 50 𝑜ℎ𝑚

𝑉𝑖𝑛 (𝑝−𝑝)
𝑅𝑖𝑛 =
𝐼

Substituting the values we get

𝑅𝑖𝑛
𝑉𝑜𝑙𝑡𝑎𝑔𝑒 𝑔𝑎𝑖𝑛 = 𝐴𝑣 = = 47.99𝑑𝑏
𝑅𝑜𝑢𝑡
The given circuit have very high input impedance in Mega Ohms and it has very high voltage gain and
CMMR.

1.2 OBJECTIVE 2

Simulation:
In this 2nd part simulation was performed on MULTISIM and same AC and DC characteristics were
calculated on MULTISIM. No any discrepancies were found. Its diagram is given below. The similar circuit Commented [pc1]: Please make a table of characteristics. One
column will have calculated results from objective 1, Second
was also made on hardware and its results were found similar to that of simulation . column will have conditions calculated from simulation and third
column will have % error.
Do this separately for AC and DC analysis.
Also, the plots should be Added.

Transistor Calculated Power value Simulated Power value Error Commented [pc2]:
from Objective 1 from Objective 2
Q1 5.62 mW 5.96 mW 0.34mW
Q2 5.6 mW 5.25 mW 0.35mW
Q3 17.5 mW 13.2 mW 4.3 mW
Q4 3.75 mW 408 uW 3.3 mW
Q5 3.75 mW 11 mW 7.25 mW
 Figure 1 Power Consumption

Transistor Calculated Voltage value Simulated Voltage value Error

from Objective 1 from Objective 2
Q1 15 V 15 V 0V
Q2 12.65 V 13.2 V 0.55V
Q3 14.505 V 13.5 V 1.855 V
Q4 14.92 V -14.4 V 0.52W
Q5 15 V -647mV 14.353V
 Figure 2 Voltages of the circuit

Transistor Calculated Current value Simulated Current value Error

from Objective 1 from Objective 2
Q1 500 uA 382uA 118 uA
Q2 500 uA 379uA 121 uA
Q3 33.33 uA 748uA 714.67 uA
Q4 3.33 uA 648uA 644.7uA
Q5 3.33 763 uA 759.67 uA
 Figure 3 Currents of each Transistors

The input resistances were also calculated during the simulation as shown in below diagram
Figure 4 Input Resistance

Figure 5 AC sweep
Figure 6 DC operating Point Analysis
Figure 7 AC Analysis at 1khz

Hardware: Commented [pc3]: We need to add hardware results that I

gave u. If any thing is missing, please leave highlighted space there.
The similar circuit was implemented on hardware and its images are pasted below Add hardware results here. Discuss them and any errors/problems
faced during hardware construction.
Result comparison: Commented [pc4]: Final results difference between theoretical
calculation (from objective 1), simulation and hardware, will be
As we can see in objective two that the calculated values from the objective 1 and simulated values from discussed here.
Objective 2 are very close to each other except for transistors Q4 and Q5. The errors in the Q4 and Q5
could be due some simulation errors incorporated in NI MULTISIM. The Hardware results shows
similarity to the results obtained in the simulation part.

Objective 3

Part A:
In this part of the objective the target was to improve the performance of the given circuit. It was
achieved by putting a current mirror At Q1 and changing the value of R2 resistor to 1k ohm and R3 to
20K ohm. The performance was improved in terms of its voltage gain of the circuit as it can be seen in
the simulation part.

Figure 8 Improved circuit with current mirror

 Figure 9 DC Transfer Characteristic

Figure 10 Dc Operating Point Analysis

 Figure 11 AC Sweep

Part B:

In this part of the objective we were told to improve the performance of the circuit by making changes
to the original one and that circuit should be able to run a 8 ohm loudspeaker . We used a current mirror Commented [pc5]: Objective 3 had two parts. Part A and Part
B.. In first part, you will improve circuit:
at Q1 transistor and value of R2 was changed to 1k ohm and R3 to 20kohm. The performance in terms of
voltage gain was improved. The changes made in part A of the objective 3 was successful in testing the Part A:
Please explain little more.
same circuit on 8 ohm loudspeaker. Please calculate the new and improved values of voltage gain
(dB), input-output impedance, CMRR (dB), etc. Compare
results in table with previous results to prove that this circuit is
Moreover Crossover Distortion, thermal runaway and short circuit protection was also taken into better.
account. On keenly observing the circuit it was also observed that there was no negative feedback to the Part B:
Now, in part B, you will again edit circuit to make it suitable for 8
load and the whole circuit was performing very well under all condition. Ohm speaker with 100mW. Please discuss or derive theoretically.
How, do you know that its performance is satisfactory for 8 Ohm
speaker.

Crossover distortion (THD-Total Harmonic Distortion), thermal

runaway and short circuit protection should also be taken into
account within the design changes. Explore negative
feedback. These changes should be analysed in terms of
advantages and limitations, relative to the original circuit with
the help of NI Multisim
All these highlighted points must be discussed in objective 3.

For both parts, you need to include plots. Also, the measurements
or calculations can be tabulated.
 Figure 12 Improved circuit with 8 ohm Loudspeaker

Conclusion
The overall objective of the design of the circuit and its improvement was successfully achieved along
with the calculation of the parameters of the Op-Amplifier. We were given 3 tasks to perform. In the 1st
task we were told to calculate theoretical values of the given circuit. The given circuit was an Op-Amp
Commented [pc6]: Conclusion should be around half page.
First, it will summarize what was done in practical. Secondly, it will
briefly explain obtained results and finally it will draw some
conclusion.

having 5 transistors, Q1,Q2,Q3,Q4 and Q5. We calculated the individual currents, voltages, input
impedances, voltage gains in db of each transistor. Also the CMMR was calculated for every transistor. In
2nd part of the objective we were told to perform the same circuit analysis on NI-MULTISIM. The circuit
was simulated successfully on MULTISIM and the values were compared with the results obtained in
objective 1. The same circuit was then successfully made on hardware and the results were again
compared with the theoretical and simulated values. There was a slight error in Q4 and Q5 voltage
values. That error could have been due to the simulation error or noise present in the implementation
of the hardware. In the 3rd part of the objective we were told to improve the circuit performance in
terms of its voltage gain and CMMR. We were given a number of options to incorporate to improve its
performance. Firstly the performance was improved by incorporating a current mirror at Q1 position
and changing the values of resistance. We saw that we get a improvement in voltage gain values and
other parameters were improved too. In the 2nd part of objective 3, the changes made in the circuit was
successful in running a loudspeaker load. Short circuit protection, thermal overload , THD was also
considered while designing the overall circuit for the desired task.

All these tasks helped us in understanding the basic building blocks of the simple OP-AMP, its working its
functions and about its parameters. We were able to perform it on simulation as well as on hardware.
The results obtained were compared and very few errors were found. Then finally we made few changes
in the circuit and improved its performance in terms of parameters.