OBJECTIVE - To develop PHOTOVOLTAIC CELL model using MATLAB

INTRODUCTION

Solar power has become the trend in renewable energy. It has the potential to
meet many of the challenges facing the world. The traditional central power of
stations with their pollution related problems will likely be replaced with cleaner
and smaller power plants closer to the loads.The energy generated by the sun is one
of the most promising, nonpolluting, free source of energy.Among of its benefits,
solar systems are easily expanded. Despite of their still relatively high cost, the
worldwide installed PV systems show a nearly exponential increase. PV systems
have proven that it can generate power to very small electronic devices up to
utility scale PV power plant. A PV cell directly converts sunlight into
electricity , the basic elementary device of PV system is the PV cell. The basic
building block for PV system is a PV module consisting of a number of pre-wired
cells in series. Modules are then connected in series to increase voltage and in
parallel to increase current, the product is power. PV array is formed as series
and parallel combination of modules. The performance of a PV system is normally
evaluated under the standard test condition (STC), where an average solar
spectrum at AM1.5 is used, the irradiance is normalized to 1000W/m”, the cell
temperature is defined as 25°C. However, under real operating conditions varying
irradiance as well as significant temperature changes) most of commercial modules
do not necessary behave as given in the specification given by the manufacturers. In
addition, PV modules perform differently according to the location, time of the day,
and season of the year.

It is therefore essential with the growing demand of PV modules to develop reliable

methods for accurate extraction of the module internal parameters. Not all the module
parameters are provided by the manufacturers, and this makes it crucial to evaluate
these parameters with robust estimation methods to predict the behavior of any PV
module accurately.
FORMULAES USED

Iph=[Isc+Kt*(T-298)]*S/1000 %photo current

Isat=Irs*(T/Tn)^3 * exp[q*Ego*((1/Tn)-(1/T))/(n*K)] %saturation current

Irs=Isc/[e^((q*Voc)/(n*Ns*K*T))-1] %reverse saturation current

Io=Iph*Np-Np*Isat*[exp((q/(K*T*A))*(Vo/Ns)-1] %output current of pv module

Eg=Ego-(a*T*T)/((T+beta)*q) %band gap energy of semiconductor

DEVELOPED CODE

%for S variation% where S is the insolation

% Declaring variables%

Isc=8.21; %short circuit current

ki=0.00023; %short circuit current of cell at 25 degree
centigrade and 1000W/m^2
k=1.38065*10^(-23); %Boltzmann constant
Iscr=5.21; %short circuit current%
Irs=0.000021; %reverse saturation current%
T=318; %operating temperature(in K)
S=[1000 800 600 400 200];%solar irradiance
Tr=298; %normal temperature at 25 degree
centigrade(in K)
q=1.602*10^(-19); %electron charge
Voc=32.9; %open circuit voltage
A=2.15; %ideality factor of diode
Ego=1.1666; %initial band gap energy of the semiconductor
(in eV)
Alpha=0.473;
Beta=636;

%Implementation of formula part%

Eg=Ego-(Alpha*T*T)/(T+Beta)*q;% band gap energy of the

semiconductor(in eV)
Ns=80; %no of cells connected in series
Np=4; %no of cells connected in parallel
Rs=221; %series resistance
Rsh=415.405; %shunt resistance
Vo=0:1:300; %output voltage%
for i=1:5
Iph=(Iscr+ki*(T-Tr))*((S(i))/1000); % phase current
Irs=Iscr/(exp((q*Voc)./(A*Ns*k*T))-1);%reverse saturation current
Isa=Irs*((T/Tr)^3)*exp(q*Eg/(k*A)*((1/Tr)-(1/T)));%saturation
current%
 Io=(Iph*Np)-Np*Isa*(exp(q/(k*T*A)*Vo./Ns)-1); %output current of PV
module
Po=Vo.*Io; %output power

figure(1)
plot(Vo,Io);
axis([0 30 0 30]);
xlabel('Voltage in volts');
ylabel('Current in amps');
hold on;

figure(2)
plot(Vo,Po);
axis([0 30,0 450]);
xlabel('Voltage in volts');
ylabel('Power in watts');
hold on;

figure(3)
plot(Io,Po);
axis([0 30 0 450]);
xlabel('Current in amps');
ylabel('Power in watts');
hold on;
end

%for T variation% where T is the temperature

%Declaring variables%

Isc=8.21; %short circuit current

ki=0.00023; %short circuit current of cell at 25 degree
centigrade an 1000 W/m^2
k=1.38065*10^(-23);%Boltzmann constant
Iscr=3.75; %short circuit current%
Irs=0.000021; %reverse saturation current%
T=[303 308 313 318 350]; %operating temperature(in K)
S=1000; %solar irradiance
Tr=298; %normal temperature at 25 degree centigrade(in K)
q=1.602*10^(-19); %electron charge
Voc=32.9; %open circuit voltage
A=2.15; %ideality factor of diode
Ego=1.1666; %initial band gap energy of the semiconductor(in eV)
Alpha=0.473;
Beta=636;

%Implementation of formula part%

Ns=80; %no of cells connected in series

Np=4; %no of cells connected in parallel
Rs=221; %series resistance
Rsh=415.405; %shunt resistance
Vo=0:1:300; %output voltage%

for i=1:5
Eg=Ego-(Alpha*T(i)*T(i)/(T(i)+Beta)*q);%band gap energy of
semiconductor(in eV)
Iph=(Isc+ki*(T(i)-Tr))*(S/1000); % phase current
Irs=Iscr/(exp((q*Voc)./(A*Ns*k*T(i)))-1);%reverse saturation
current
Isa=Irs*((T(i)/Tr)^3)*exp(q*Eg/(k*A)*((1/Tr)-(1/T(i))));%saturation
current%
Io=(Iph*Np)-Np*Isa*(exp(q/(k*T(i)*A)*Vo./Ns)-1); %output current of
PV module
Po=Vo.*Io;%output power

figure(1) %voltage Vs current plot%

plot(Vo,Io);
axis([0 45,0 35]);
xlabel('Voltage in volts');
ylabel('Current in amps');
hold on;

figure(2 )%voltage Vs power plot%

plot(Vo,Po);
axis([0 45 0 650]);
xlabel('Voltage in volts');
ylabel('Power in watts');
hold on;

figure(3) %current Vs power plot%

plot(Io,Po);
axis([0 30 0 650]);
xlabel('Current in amps');
ylabel('Power in watts');
hold on;
end
% both T and S variation%

Isc=8.21; %short circuit current

ki=0.00023; %short circuit current of cell at 25 degree centigrade an
1000 W/m^2
k=1.38065*10^(-23);%Boltzmann constant
Iscr=5.21;%short circuit current%
Irs=0.000021;%reverse saturation current%

S=[1000 800 600 400 200]; %solar irradiance

Tr=298; %normal temperature at 25 degree centigrade(in K)
q=1.602*10^(-19); %electron charge
Voc=32.9; %open circuit voltage
A=2.15; %ideality factor of diode
Ego=1.1666; %initial band gap energy of the semiconductor(in eV)
Alpha=0.473;
Beta=636;

%Implementation of formula part%

Eg=Ego-(Alpha*T*T)/(T+Beta)*q;% band gap energy of the

semiconductor(in eV)
Ns=80; %no of cells connected in series
Np=4; %no of cells connected in parallel
Rs=221; %series resistance
Rsh=415.405; %shunt resistance
Vo=0:1:300; %output voltage%
T=318:2:348; %operating temperature(in K)
for i=1:5
Iph=(Iscr+ki*(T(i)-Tr))*((S(i))/1000); % phase current
Irs=Iscr/(exp((q*Voc)./(A*Ns*k*T(i)))-1);%reverse saturation
current
Isa=Irs*((T(i)/Tr)^3)*exp(q*Eg/(k*A)*((1/Tr)-(1/T(i))));%saturation
current%
Io=(Iph*Np)-Np*Isa*(exp(q/(k*T(i)*A)*Vo./Ns)-1); %output current of
PV module
Po=Vo.*Io; %output power

figure(1)
plot(Vo,Io);
axis([0 30 0 30]);
xlabel('Voltage in volts');
ylabel('Current in amps');
hold on;

figure(2)
plot(Vo,Po);
axis([0 30,0 450]);
xlabel('Voltage in volts');
 ylabel('Power in watts');
hold on;

figure(3)
plot(Io,Po);
axis([0 30 0 450]);
xlabel('Current in amps');
ylabel('Power in watts');
hold on;
end

GRAPHS

%S variation%
% T variations%
Both S and T variations
DISCUSSION-

I-V characteristic of a PV module is dependent on insolation and

temperature, which are continuously changing. The photo-generated
current depends directly on insolation. The short-circuit current
varies linearly with irradiance and its variation with temperature is
fairly small depending on its temperature coefficient. An increase in
temperature causes reduction in the band gap, which in turn, causes
increase in photocurrent. Photocurrent variations with temperature and
irradiance are similar to those of the short-circuit current.
The open–circuit voltage Voc exhibits a strong dependence on
temperature, which is described by the voltage temperature
coefficient. The cell voltage decreases by approximately 2.2 mV per
degree celcius rise in temperature, depending on the resistivity of
material.Its dependence on insolation G is, however, not very
significant and follows a logarithmic function.