TITLE: Temperature Effect on Voltage Divider Bias Circuit

OBJECTIVES:
 To be able to describe the temperature effects on a voltage divider bias
circuit by using a typical transistor circuit and verify the results with a
multimeter, a clock, and calculations.

APPARATUS AND MATERIALS:

 F A C E T Base Unit
 TRANSISTOR AMPLIFIER CIRCUITS Circuit Board
 Power supply, 15 Vdc
 Multimeter
 Clock

PROCEDURE: Refer to manual

RESULTS AND OBSERVATION:

We have performed procedures 1 to 2 and answered the questions below:

3. Measure the record the voltage [Vr5 (cold)] across the 100 ohms resistor R5 in
the collector circuit. Leave the multimeter connected across the R5.
VR5cold = 1.59 mA

4. What is the collector current Ic cold?

ICcold = 1.89 mA

5. The change in collector current due to an increase in transistor Q1

temperature will be measured after 2.0 minutes period. Connect the transistor
HEATER to the circuit and make note of the time. What is the voltage across R5
[Vr5(hot)] after the HEATER is connected for 2.0 minutes?
VR5hot = 0.197 V

7. What is the collector current [Ic (hot)] after 2.0 minutes?

IChot = 1.97 mA

8. Does Ic decrease or increase with a temperature increase of transistor Q1?

The Ic increases with a transistor Q1 temperature increase.

9. What is the percent (%) change in collector current after transistor Q1 is

heated for 2.0 minutes in a fixed bias circuit?

Ic(hot)−Ic(cold)
𝑥100
Ic(cold)
1.97−1.89
𝑥100 = 4.23%
1.89

10. How does the percent increase in collector current of the voltage divider
circuit, calculated in step 9, compare with the percent change in collector current
of the fixed bias circuit, calculated in step 18 of Exercise 5-1?

There is a higher percentage change in collector current Ic after the transistor Q1

is heated for 2.0 minutes in a fixed bias circuit.
EVALUATION:

1. A common emitter transistor bias circuit with a low stability factor would
have
a. a collector resistor larger than the emitter resistor
b. base and collector resistors
c. a voltage divider circuit and an emitter resistor
d. two dc power supplies

2. A stability factor
a. less than 10 is good
b. over 50 is good
c. equal to beta is good
d. None of the above

3. A voltage divider circuit has an emitter resistor. As the emitter voltage

increases with temperature, the base
a. current increases
b. to ground voltage decreases
c. current decreases
d. current remains the same

4. The voltage divider circuit with an emitter resistor has good temperature
stability because the collector current change due to temperature change
a. depends on the dc supply voltage
b. is dependent on beta
c. equals the emitter current
d. is almost independent of beta

5. The purpose of the voltage divider circuit with an emitter resistor is to

a. set the collector current
b. fix the beta for the transistor
c. maintain an essentially constant Q-point
d. maintain a constant VBE

CONCLUSION:

Therefore, the voltage divider bias circuit is more stable compared to the
Fixed-boas circuit when the transistor is subjected to temperature changes. This
is because, there is very little increase with the collector current as the transistor
temperature changes.
TITLE: Temperature Effect on Fixed Bias Circuit

OBJECTIVES:
 To be able to demonstrate the effect of a temperature increase on
transistor bias by using a typical transistor amplier bias circuits.
 To be able to describe the effect of temperature on a fixed bias circuit
using a typical transistor circuit and verify the results with a multimeter, a
vlovk and calculations.
APPARATUS AND MATERIALS:
 F A C E T Base Unit
 TRANSISTOR AMPLIFIER CIRCUITS Circuit Board
 Power Supply, 15 Vdc (2 required)
 Multimeter
 Clock
PROCEDURE: Refer to Manual

RESULTS AND OBSERVATIONS:

We have executed procedures one to four and answered the questions below.

5. Measure and record the base-emitter voltage [VBE(cold)]. Leave the voltmeter
leads connected to teh base-emitter terminals.
VBEcold = 0.625 V

6. Connect the transistor HEATER to the circuit and make note of the time. What
is VBE (hot) after the HEATER is connected 2.0 minutes?
VBEhot = 0.622 V

8. Does the VBE decrease or increase with a transistor Q1 temperature

increase?
The VBE decreases with a transistor Q1 temperature increase.

9. What is the change in VBE after the transistor is heated for 2.0 minutes?
0.028 V

11. Record the voltage across R5 [VBE(cold)].

VR5cold = 0.640 V

12. What is the collector current [IC cold]?

ICcold = 0.204/100 = 2.04 mA

13. Connect the transistor HEATER to the circuit and make note of the time.
What is the voltage across R5 [Vr5(hot)] after the HEATER is connected for 2.0
minutes?
VR5hot = 0.215 V

15. What is the collector current [Ic(hot)] after the transistor is heated for 2.0
minutes?
IChot = 2.15 mA

16. Does Ic decrease or increase with a temperature increase of transistor Q1?

The Ic increases with a transistor Q1 temperature increase.

17. What is the change in Ic after the transistor is heated for 2.0 minutes?
0.11 mA

18. What is the percent change in collector current Ic after the transistor Q1 is
heated for 2.0 minutes in a fixed bias circuit?
Ic(hot)−Ic(cold)
Ic(cold)
𝑥100
2.15−2.04
𝑥100 = 5.39%
2.04
EVALUATION:

1. Transistors are
a. not very senstive to changes in temperature
b. heat-sensitive devices
c. reliable when operated above 750 Celsius
d. pressure-sensitive devices

2. The transistor bias refers to

a. the dc operating conditions
b. the ac operating conditions
c. temperature stability
d. the dc voltage supply

3. The transistor base-emitter voltage (VBE)

a. increase with an increase in temperature
b. is not affected by temperature change
c. decreases with an increase in temperature
d. has no effect on collector current

4. In a fixed bias circuit, an increase in transistor operating temperature

moves the Q-point
a. toward the cut-off point
b. insignificantly
c. to a new dc load line
d. toward the saturation point

5. A transistor circuit with a stability factor of 200

a. is not affected by a temperature change
b. has a very poor temperature stability
c. is usually used in audio amplifier circuits
d. is usually not affected by a change in beta due to a temperature
change

CONCLUSION:

In a Fixed-bias circuit, as the temperature of a transistor increases, the

VBE and IC decreases and increases greatly, respectively. These changes in
VBE and IC values indicate that a fixed-bias circuit is very sensitive to changes in
temperature.
 CEBU INSTITUTE OF TECHNOLOGY-UNIVERSITY

Cebu City

ECE282 - W1

EXPERIMENT NO. 1

BIAS STABILIZATION
TITLE

MIRAMBEL, MAY O. BSECE-2

NAME / COURSE / YEAR

ENGR. JOSELITO P. VALDEZAMO

INSTRUCTOR