, Una.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MJ4032
MJ4035
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS

. COMPLEMENTARY PNP - NPN DEVICES

. MONOLITHIC DARLINGTON
CONFIGURATION
. INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE

APPLICATIONS
. GENERAL PURPOSE SWITCHING
. GENERAL PURPOSE AMPLIFIERS

DESCRIPTION
The MJ4035 is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in Jedec TO-3 metal case.
It is inteded for use in general purpose and
amplifier applications.
The complementary PNP type is the MJ4032. INTERNAL SCHEMATIC DIAGRAM
C o(TAB)

B
o•
(1)
Rl

40 E° (2) E°(2)

Ri Typ. = 6 KQ Rz Typ. = 55 Q

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

PNP MJ4032
NPN MJ4035
VCBO Collector-Base Voltage (IE = 0) 100 V
VCEO Collector-Emitter Voltage (Is = 0) 100 V
VEBO Emitter-Base Voltage (Ic = 0) 5 V
Ic Collector Current 16 A
IB Base Current 0.5 A
Plot Total Dissipation at Tc < 25 °C 150 W
T s tg Storage Temperature -65 to 200 °C
Tj Max. Operating Junction Temperature 200 °C
For PNP types voltage and current values are negative.

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time ongoing
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors entourages customers to verity that datasheets nre current before placing orders.
MJ4032/MJ4035

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max 1.17 °C/W

ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

ICER Collector Cut-off VCE = 100V 1 mA
Current (RBE = 1KJ1) VCE=100V TC=150°C 5 mA
ICEO Collector Cut-off VCE = 50 V 3 mA
Current (Is = 0)
IEBO Emitter Cut-off Current VEB = 5 V 5 mA
(lc = 0)
V(BR)CEO* Collector-Emitter Ic = 100 mA 100 V
Breakdown Voltage
VcE(sat)* Collector-Emitter lc = 10A IB = 4 0 m A 2.5 V
Saturation Voltage lc=16A IB = 80mA 4 V
VBE* Base-Emitter Voltage lc = 1 0 A V CE = 3V 3 V
rips* DC Current Gain Ic = 10 A VCE = 3 V 1000
* Pulsed: Pulse duration = 300 us, duty cycle 1.5 %
For PNP type voltage and current values are negative.