Sei sulla pagina 1di 49

Energy Efficient Innovations

General Purpose and Low V<sub>CE(sat)</sub> Transistors


Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BC846CL General Purpose 0.0116 Pb-free Active NPN Genera 0.25 0.1 65 80 6 0.7 0.66 420 800 100 0.225 SOT-
Transistors l 23-3
Halide Purpos
free e

12A02CH Bipolar Transistor, -12V, - 0.0501 Pb-free Active PNP Low 0.24 1 12 15 5 0.9 - 300 700 450 0.7 CPH-3
1A, Low VCE(sat), PNP VCE(sat)
Single CPH3

15C01C Bipolar Transistor, 15V, 0.0533 Pb-free Active NPN Low 0.3 0.7 15 20 5 0.9 - 300 800 330 0.3 SC-59-
0.7A, Low VCE(sat) NPN VCE(sat) 3 / CP-
Single CP 3

15C01M Bipolar Transistor, 15V, 0.0413 Pb-free Active NPN Low 0.3 0.7 15 20 5 0.9 - 300 800 330 0.3 SC-70 /
0.7A, Low VCE(sat) NPN VCE(sat) MCP3
Single MCP

15C01SS Bipolar Transistor, 15V, 0.0445 Pb-free Active NPN Low 0.3 0.6 15 20 5 0.9 - 300 800 - 0.2 SOT-
0.6A, Low VCE(sat), NPN VCE(sat) 623 /
Single SSFP SSFP

2N3055 15 A, 60 V NPN Bipolar 2.9406 Pb-free Active NPN Genera 3; 1.1 15 60 100 7 - 1.5 20 70 2.5 115 TO-
Power Transistor l 204-2
Purpos
e

2N3055A 15 A, 60 V NPN Bipolar 2.9255 Pb-free Active NPN Genera 1.1 15 60 100 7 - 0.7 10 70 2.5 115 TO-
Power Transistor l 204-2
Purpos
e

2N3442 10 A, 140 V NPN Bipolar 3.2478 Pb-free Active NPN Genera 5 10 140 160 7 - 5.7 20 70 0.08 117 TO-
Power Transistor l 204-2
Purpos
e

2N3771 30 A, 40 V NPN Bipolar 3.6118 Pb-free Active NPN Genera 2 30 40 50 5 - 2.7 15 60 0.2 150 TO-
Power Transistor l 204-2
Purpos
e

2N3772 20 A, 60 V NPN Bipolar 3.7888 Pb-free Active NPN Genera 1.4 20 60 100 7 - 2.2 15 60 0.2 150 TO-
Power Transistor l 204-2
Purpos
e

2N3773 16 A, 140 V NPN Bipolar 3.5924 Pb-free Active NPN Genera 4 16 140 160 7 - 2.2 15 60 4 150 TO-
Power Transistor l 204-2
Purpos
e

2N3904T 40 V NPN General 0.024 Pb-free Active NPN Genera 0.3 0.2 40 60 6 0.65 - 100 300 300 1.5 TO-92-
Purpose Bipolar Junction l 3
Transistor Purpos
e TO-92-
3 LF

2N3906T Small Signal PNP Bipolar 0.0251 Pb-free Active PNP Genera 0.4 0.2 40 40 5 0.65 - 100 300; 250 1.5; TO-92-
Transistor, TO-92 l 400 0.625 3
Purpos
e TO-92-
3 LF

2N4401(LEGAC NPN Bipolar Junction 0.0272 Pb-free Active NPN Genera 0.75 0.6 40 60 6 1.2 - 100 300 250 0.625 TO-92-
Y FAIRCHILD) Transistor, TO-92 l 3
Purpos
e TO-92-
3 LF

2N4403T PNP Bipolar Junction 0.0277 Pb-free Active PNP Genera 0.75 0.6 40 40 5 1.3 - 100 300 200 0.625 TO-92-
Transistor, TO-92 l 3
Purpos
e TO-92-
3 LF

2N4918 1.0 A, 40 V PNP Bipolar 0.2148 Pb-free Active PNP Genera 0.6 1 40 40 5 1.3 1.3 30 150 3 30 TO-
Power Transistor l 225-3
Halide Purpos
free e

2N4919 Medium Power PNP 0.2148 Pb-free Active PNP Genera 0.6 1 60 40 5 1.3 1.3 30 150 3 30 TO-
Bipolar Power Transistor l 225-3
Halide Purpos
free e

2N4920 1.0 A, 80 V PNP Bipolar 0.2148 Pb-free Active PNP Genera 0.6 1 80 80 5 1.3 1.3 30 150 3 30 TO-
Power Transistor l 225-3
Halide Purpos
free e

2N4921 Medium Power NPN 0.214 Pb-free Active NPN Genera 0.6 1 40 40 5 1.3 1.3 30 150 3 30 TO-
Bipolar Power Transistor l 225-3
Halide Purpos
free e

2N4922 Medium Power NPN 0.2119 Pb-free Active NPN Genera 0.6 1 60 60 5 1.3 1.3 30 150 3 30 TO-
Bipolar Power Transistor l 225-3
Halide Purpos
free e

2N4923 1.0 A, 80 V NPN Bipolar 0.2091 Pb-free Active NPN Genera 0.6 1 80 80 5 1.3 1.3 30 150 3 30 TO-
Power Transistor l 225-3
Halide Purpos
free e

2N5038 NPN Bipolar Power 5.4431 Pb-free Active NPN Genera 2.5 20 90 150 7 3.3 - 20 100 60 140 TO-
Transistor l 204-2
Purpos
e

2N5190 4.0 A, 40 V NPN Bipolar 0.2591 Pb-free Active NPN Genera 0.6 4 40 40 5 - 1.2 25 100 2 40 TO-
Power Transistor l 225-3
Halide Purpos
free e

2N5191 4.0 A, 60 V NPN Bipolar 0.2365 Pb-free Active NPN Genera 0.6 4 60 60 5 - 1.2 25 100 2 40 TO-
Power Transistor l 225-3
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

2N5192 4.0 A, 80 V NPN Bipolar 0.2467 Pb-free Active NPN Genera 0.6 4 80 80 5 - 1.2 20 80 2 40 TO-
Power Transistor l 225-3
Halide Purpos
free e

2N5195 4.0 A, 80 V PNP Bipolar 0.2379 Pb-free Active PNP Genera 0.6 4 80 80 5 - 1.2 20 80 2 40 TO-
Power Transistor l 225-3
Halide Purpos
free e

2N5302 High Power NPN Bipolar 3.6118 Pb-free Active NPN Genera 0.75 30 60 60 - 1.8 1.7 15 60 2 200 TO-
Power Transistor l 204-2
Purpos
e

2N5401 High Current PNP Bipolar 0.0251 Pb-free Active PNP High 0.2 0.6 150 160 5 1 - 40 200 100 0.625 TO-92-
Transistor, TO-92 Current 3

TO-92-
3 LF

2N5550T Small Signal NPN Bipolar 0.0213 Pb-free Active NPN Genera 0.25 0.6 140 160 6 1.2 - 50 200 100 0.625 TO-92-
Transistor l 3 LF
Purpos
e

2N5657 0.5 A, 350 V NPN Bipolar 0.1808 Pb-free Active NPN Genera 1 0.5 350 375 6 - - 30 250 10 20 TO-
Power Transistor l 225-3
Halide Purpos
free e

2N5684 50 A, 80 V PNP Bipolar 9.5192 Pb-free Active PNP Genera 1 50 80 80 5 2 2 15 60 2 300 TO-
Power Transistor l 204-2 /
Purpos TO-3-2
e

2N5686 50 A, 80 V NPN Bipolar 9.5196 Pb-free Active NPN Genera 1 50 80 80 5 2 2 15 60 2 300m TO-
Power Transistor l 204-2 /
Purpos TO-3-2
e

2N5883 25 A, 60 V PNP Bipolar 3.637 Pb-free Active PNP Genera 1 25 60 60 5 2.5 1.5 20 100 4 200 TO-
Power Transistor l 204-2
Purpos
e

2N5884 25 A, 80 V PNP Bipolar 3.63 Pb-free Active PNP Genera 1 25 80 80 5 2.5 1.5 20 100 4 200 TO-
Power Transistor l 204-2
Purpos
e

2N5885 25 A, 60 V NPN Bipolar 3.6088 Pb-free Active NPN Genera 1 25 60 60 5 2.5 1.5 20 100 4 200 TO-
Power Transistor l 204-2
Purpos
e

2N5886 25 A, 80 V NPN Bipolar 3.4991 Pb-free Active NPN Genera 1 25 80 80 5 2.5 1.5 20 100 4 200 TO-
Power Transistor l 204-2
Purpos
e

2N6107 7.0 A, 70 V PNP Bipolar 0.3933 Pb-free Active PNP Genera 3.5 7 70 80 5 3.5 3 30 150 4 40 TO-
Power Transistor l 220-3
Purpos
e

2N6109 7.0 A, 50V PNP Bipolar 0.3128 Pb-free Active PNP Genera 3.5 7 50 60 5 3.5 3 30 150 10 40 TO-
Power Transistor l 220-3
Purpos
e

2N6111 7.0 A, 30 V PNP Bipolar 0.3145 Pb-free Active PNP Genera 3.5 7 30 40 5 3.5 3 30 150 10 40 TO-
Power Transistor l 220-3
Purpos
e

2N6288 7.0 A, 30 V NPN Bipolar 0.3419 Pb-free Active NPN Genera 3.5 7 30 40 5 3.5 3 30 150 4 40 TO-
Power Transistor l 220-3
Purpos
e

2N6292 7.0 A, 70 V NPN Bipolar 0.3276 Pb-free Active NPN Genera 3.5 7 70 80 5 3.5 3 30 150 4 40 TO-
Power Transistor l 220-3
Purpos
e

2N6338 25 A, 100 V NPN Bipolar 7.1717 Pb-free Active NPN Genera 1 25 100 100 6 2.5 1.8 30 120 40 200 TO-
Power Transistor l 204-2
Purpos
e

2N6341 25 A, 150 V NPN Bipolar 7.691 Pb-free Active NPN Genera 1 25 150 180 6 2.5 1.8 30 120 40 200 TO-
Power Transistor l 204-2
Purpos
e

2N6487 15 A, 60 V NPN Bipolar 0.4533 Pb-free Active NPN Genera 1.3 15 60 70 5 - 1.3 20 150 5 75 TO-
Power Transistor l 220-3
Purpos
e

2N6488 Power Bipolar Transistor, 0.4533 Pb-free Active NPN Genera 1.3 15 80 90 5 - 1.3 20 150 5 75 TO-
NPN, 80 V, 15 A l 220-3
Purpos
e

2N6490 15 A, 60 V PNP Bipolar 0.4067 Pb-free Active PNP Genera 1.3 15 60 70 5 - 1.3 20 150 5 75 TO-
Power Transistor l 220-3
Purpos
e

2N6491 Power Bipolar Transistor, 0.4067 Pb-free Active PNP Genera 1.3 15 80 90 5 - 1.3 20 150 5 75 TO-
NPN, 80 V, 15 A l 220-3
Purpos
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

2N6517 High Voltage Transistors 0.0343 Pb-free Active PNP Genera 1 0.5 350 350 6 0.9 2 30 200 40 0.625 TO-92-
l 3
Purpos
e TO-92-
3 LF

2N6520T High Voltage PNP Bipolar 0.0383 Pb-free Active PNP Genera 0.3 0.5 350 350 5 0.75 2 30 200 40 0.625 TO-92-
Junction Transistor l 3 LF
Purpos
e

2SA1416 Bipolar Transistor, -100V, 0.1277 Pb-free Active PNP Low 0.6 1 100 120 6 0.85 - 140; 280; - 0.5 SOT-89
-1A, Low VCE(sat), VCE(sat) 200 400 / PCP-1
(PNP)NPN Single PCP

2SA1417 Bipolar Transistor, (- 0.2107 Pb-free Active PNP Low 0.6 2 100 120 6 0.85 - 140; 280; 120 1.5 SOT-89
)100V, (-)2A, Low VCE(sat) 200 400 / PCP-1
VCE(sat), (PNP)NPN
Single PCP

2SA1418 Bipolar Transistor, -160V, 0.1879 Pb-free Active PNP Low 0.5 0.7 160 180 6 0.85 - 140 280 - 0.5 SOT-89
-0.7A, Low VCE(sat), VCE(sat) / PCP-1
(PNP)NPN Single PCP

2SA1419 Bipolar Transistor, -160V, 0.222 Pb-free Active PNP Low 0.5 1.5 160 180 6 0.85 - 140; 280; - 0.5 SOT-89
-1.5A, Low VCE(sat), VCE(sat) 200 400 / PCP-1
(PNP)NPN Single PCP Halide
free

2SA1552 Bipolar Transistor, (- 0.2176 Pb-free Active PNP Low 0.5 1.5 160 180 6 0.85 - 140; 280; - 1 IPAK /
)160V, (-)1.5A, Low VCE(sat) 200 400 TP
VCE(sat) (PNP)NPN Halide
Single TP/TP-FA free DPAK-
3 / TO-
252-3

2SA1593 Bipolar Transistor, (- 0.264 Pb-free Active PNP Low 0.6 2 100 120 6 0.85 - 140; 280; - 1 IPAK /
)100V, (-)2A, Low VCE(sat) 200 400 TP
VCE(sat), (PNP)NPN
Single TP/TP-FA DPAK-
3 / TO-
252-3

2SA1774 PNP Bipolar Transistor 0.0125 Pb-free Active PNP Genera 0.5 0.1 50 60 6 - - 120 560 - 0.15 SC-75-
l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

2SA1943 PNP Epitaxial Silicon 1.76 Pb-free Active PNP Genera 3 17 250 250 5 - 1 80; 55 160; 30 150 TO-
Transistor l 110 264-3
Purpos
e

2SA1962 PNP Epitaxial Silicon 1.0448 Pb-free Active PNP Genera 3 17 250 250 5 - 1 80; 55 160; 30 130 TO-3P-
Transistor l 110 3L
Purpos
e

2SA2012 Bipolar Transistor, -30V, - 0.1733 Pb-free Active PNP Low 0.21 5 30 30 5 0.83 - 200 560 - 1.3 SOT-89
5A, Low VCE(sat) PNP VCE(sat) / PCP-1
Single PCP

2SA2013 Bipolar Transistor, -50V, - 0.1361 Pb-free Active PNP Low 0.18 4 50 100 6 0.89 - 200 560 - 1.3 SOT-89
4A, Low VCE(sat), VCE(sat) / PCP-1
(PNP)NPN Single PCP

2SA2016 Bipolar Transistor, -50V, - 0.1944 Pb-free Active PNP Low 0.39 7 50 100 6 0.83 - 200 560 290 1.3 SOT-89
7A, Low VCE(sat), VCE(sat) / PCP-1
(PNP)NPN Single PCP

2SA2029M3 PNP Bipolar Transistor 0.0273 Pb-free Active PNP Genera 0.5 0.1 50 60 6 - - 120 560 - 0.265 SOT-
l 723-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

2SA2039 Bipolar Transistor, -50V, - 0.2667 Pb-free Active PNP Low 0.195 5 50 100 6 0.89 - 200 560 - 0.8 IPAK /
5A, Low VCE(sat), PNP VCE(sat) TP
Single TP/TP-FA
DPAK-
3 / TO-
252-3

2SA2040 Bipolar Transistor, -50V, - 0.2356 Pb-free Active PNP Low 0.39 8 50 100 6 0.83 - 200 560 290 1 IPAK /
8A, Low VCE(sat), VCE(sat) TP
(PNP)NPN Single TP/TP-
FA DPAK-
3 / TO-
252-3

2SA2124 Bipolar Transistor, -30V, - 0.1013 Pb-free Active PNP Low 0.4 2 30 30 6 0.95 - 200 560 440 1.3 SOT-89
2A, Low VCE(sat), PNP VCE(sat) / PCP-1
Single PCP

2SA2125 Bipolar Transistor, (-)50V, 0.1427 Pb-free Active PNP Low 0.23 3 50 100 6 0.94 - 200 560 390 1.3 SOT-89
(-)3A, Low VCE(sat), VCE(sat) / PCP-1
(PNP)NPN Single PCP Halide
free

2SA2126 Bipolar Transistor, -50V, - 0.2213 Pb-free Active PNP Low 0.27 3 50 50 6 0.96 - 200 560 - 0.8 DPAK-
3A, Low VCE(sat), PNP VCE(sat) 3 / TO-
Single TP/TP-FA Halide 252-3
free
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

2SA2153 Bipolar Transistor, -50V, - 0.1036 Pb-free Active PNP Low 0.4 2 50 50 6 0.9 - 200 560 420 1.3 SOT-89
2A, Low VCE(sat), PNP VCE(sat) / PCP-1
Single PCP

2SA2169 Bipolar Transistor, -50V, - 0.3229 Pb-free Active PNP Low 0.58 10 50 100 6 0.93 - 200 560 130 0.95 IPAK /
10A, Low VCE(sat), VCE(sat) TP
(PNP)NPN Single TP/TP-
FA DPAK-
3 / TO-
252-3

2SA2202 Bipolar Transistor, -100V, 0.128 Pb-free Active PNP Low 0.24 2 100 100 7 0.85 - 200 400 300 1.3 SOT-89
-2A, Low VCE(sat) PNP VCE(sat) / PCP-1
Single PCP

2SA2210 Bipolar Transistor, -50V, - 0.6091 Pb-free Active PNP Low 0.5 20 50 50 6 1.2 - 150 450 140 30 TO-
20A, Low VCE(sat), PNP VCE(sat) 220-3
TO-220F-3SG FullPak

2SA2222SG Bipolar Transistor, -50V, - 0.2977 Pb-free Active PNP Low 0.5 10 50 50 6 1.2 - 150 450 230 25 TO-
10A, Low VCE(sat), PNP VCE(sat) 220-3
TO-220F-3FS FullPak

2SB1121 Bipolar Transistor, -25V, - 0.1737 Pb-free Active PNP Low 0.6 2 25 30 6 0.85 - 140; 280; 150 1.3 SOT-89
2A, Low VCE(sat) PNP VCE(sat) 200 400 / PCP-1
Single PCP

2SB1122 Bipolar Transistor, -50V, - 0.0992 Pb-free Active PNP Low 0.5 1 50 60 5 0.9 - 140; 280; - 1.3 SOT-89
1A, Low VCE(sat) PNP VCE(sat) 200 400 / PCP-1
Single PCP

2SB1123 Bipolar Transistor, -50V, - 0.1208 Pb-free Active PNP Low 0.7 2 50 60 6 0.9 - 140; 280; 150 0.5 SOT-89
2A, Low VCE(sat), VCE(sat) 200 400 / PCP-1
(PNP)NPN Single PCP

2SB1124 Bipolar Transistor, (-)50V, 0.2 Pb-free Active PNP Low 0.7 3 50 60 6 0.94 - 140; 280; - 1.5 SOT-89
(-)3A, Low VCE(sat), VCE(sat) 200 400 / PCP-1
(PNP)NPN Single PCP

2SB1201 Bipolar Transistor, -50V, - 0.1755 Pb-free Active PNP Low 0.7 2 50 60 6 0.9 - 140; 280; 150 0.8 IPAK /
2A, Low VCE(sat), VCE(sat) 200 400 TP
(PNP)NPN Single TP/TP-
FA DPAK-
3 / TO-
252-3

2SB1202 Bipolar Transistor, -50V, - 0.1895 Pb-free Active PNP Low 0.7 5 50 60 6 0.94 - 140; 280; - 1 IPAK /
3A, Low VCE(sat) PNP VCE(sat) 200 400 TP
Single TP/TP-FA
DPAK-
3 / TO-
252-3

2SB1203 Bipolar Transistor, -50V, - 0.2456 Pb-free Active PNP Low 0.55 5 50 60 6 0.95 - 140; 280; 130 1 IPAK /
5A, Low VCE(sat), VCE(sat) 200 400 TP
(PNP)NPN Single TP/TP-
FA DPAK-
3 / TO-
252-3

2SB1204 Bipolar Transistor, -50V, - 0.2596 Pb-free Active PNP Low 0.5 8 50 60 6 0.95 - 140; 280; 130 1 DPAK-
8A, Low VCE(sat), PNP VCE(sat) 200 400 3 / TO-
Single TP/TP-FA 252-3

IPAK /
TP

2SB1205 Bipolar Transistor, -20V, - 0.2105 Pb-free Active PNP Low 0.5 5 20 25 5 1 - 140; 280; 320 1 DPAK-
5A, Low VCE(sat), PNP VCE(sat) 200 400 3 / TO-
Single TP/TP-FA 252-3

2SB1215 Bipolar Transistor, -100V, 0.2973 Pb-free Active PNP Low 0.5 3 100 120 6 0.9 - 140; 280; - 1 IPAK /
-3A, Low VCE(sat), PNP VCE(sat) 200 400 TP
Single, TP/TP-FA
DPAK-
3 / TO-
252-3

2SB1216 Bipolar Transistor, -100V, 0.2807 Pb-free Active PNP Low 0.5 4 100 120 6 0.9 - 140 280 130 1 IPAK /
-4A, Low VCE(sat), PNP VCE(sat) TP
Single
DPAK-
3 / TO-
252-3

2SB1302 Bipolar Transistor, -20V, - 0.238 Pb-free Active PNP Low 0.5 5 20 25 5 1 - 100 400 - 1.3 SOT-89
5A, Low VCE(sat) PNP VCE(sat) / PCP-1
Single PCP

2SB815 Bipolar Transistor, (-)15V, 0.08 Pb-free Active PNP Low 0.035 0.7 15 20 5 - - 200; 400; 250 0.2 SC-59-
(-)0.7A, Low VCE(sat), VCE(sat) 300 600 3 / CP-
(PNP)NPN Single CP 3

2SC3646 Bipolar Transistor, 100V, 0.1325 Pb-free Active NPN Low 0.4 1 100 120 6 0.85 - 140; 280; - 0.5 SOT-89
1A, Low VCE(sat), VCE(sat) 200 400 / PCP-1
(PNP)NPN Single PCP

2SC3647 Bipolar Transistor, (- 0.1548 Pb-free Active NPN Low 0.4 2 100 120 6 0.85 - 140; 280; 120 1.5 SOT-89
)100V, (-)2A, Low VCE(sat) 200 400 / PCP-1
VCE(sat), (PNP)NPN
Single PCP

2SC3648 Bipolar Transistor, 160V, 0.1417 Pb-free Active NPN Low 0.4 0.7 160 180 6 0.85 - 140; 280; - 0.5 SOT-89
0.7A, Low VCE(sat), VCE(sat) 200 400 / PCP-1
(PNP)NPN Single PCP

2SC3649 Bipolar Transistor, 160V, 0.2115 Pb-free Active NPN Low 0.45 1.5 160 180 6 0.85 - 140; 280; 120 0.5 SOT-89
1.5A, Low VCE(sat), VCE(sat) 200 400 / PCP-1
(PNP)NPN Single PCP Halide
free

2SC4027 Bipolar Transistor, (- 0.1879 Pb-free Active NPN Low 0.45 1.5 160 180 6 0.85 - 140; 280; - 1 IPAK /
)160V, (-)1.5A, Low VCE(sat) 200 400 TP
VCE(sat) (PNP)NPN Halide
Single TP/TP-FA free DPAK-
3 / TO-
252-3
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

2SC4134 Bipolar Transistor, 100V, 0.2367 Pb-free Active NPN Low 0.4 1 100 120 6 0.85 - 140 280 120 0.8 DPAK-
1A, Low VCE(sat), NPN VCE(sat) 3 / TO-
Single TP/TP-FA 252-3

2SC4135 Bipolar Transistor, (- 0.2303 Pb-free Active NPN Low 0.4 2 100 120 6 0.85 - 140; 280; - 1 IPAK /
)100V, (-)2A, Low VCE(sat) 200 400 TP
VCE(sat), (PNP)NPN
Single TP/TP-FA DPAK-
3 / TO-
252-3

2SC4617 NPN Bipolar Transistor 0.0599 AEC Active NPN Genera 0.4 0.1 50 120 560 180 0.125 SC-75-
Qualifie l 3
d Purpos
e
PPAP
Capabl
e

Pb-free

Halide
free

2SC5200 NPN Epitaxial Silicon 1.6 Pb-free Active NPN Genera 3 17 250 250 5 - 1 80 160 30 150 TO-
Transistor l 264-3
Purpos
e

2SC5242 NPN Epitaxial Silicon 1.5018 Pb-free Active NPN Genera 3 17 250 250 5 - 1 80 160 30 130 TO-3P-
Transistor l 3L
Purpos
e

2SC5566 Bipolar Transistor, 50V, 0.1531 Pb-free Active NPN Low 0.13 4 50 100 6 0.89 - 200 560 - 1.3 SOT-89
4A, Low VCE(sat), VCE(sat) / PCP-1
(PNP)NPN Single PCP

2SC5569 Bipolar Transistor, 50V, 0.1988 Pb-free Active NPN Low 0.24 7 50 100 6 0.83 - 560 200 330 1.3 SOT-89
7A, Low VCE(sat), VCE(sat) / PCP-1
(PNP)NPN Single PCP

2SC5658M3 NPN Bipolar Transistor 0.0408 Pb-free Active NPN Genera 0.4 0.1 50 50 7 - - 120 560 180 0.26 SOT-
l 723-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

2SC5658RM3 Small Signal General 0.0237 Pb-free Active NPN Genera 0.4 0.1 50 50 7 - - 215 375 180 0.26 SOT-
Purpose NPN Transistor l 723-3
Halide Purpos
free e

2SC5706 Bipolar Transistor, 50V, 0.2619 Pb-free Active NPN Low 0.135 5 100 100 6 0.89 - 200 560 - 0.8 IPAK /
5A, Low VCE(sat), VCE(sat) TP
(PNP)NPN Single TP/TP-
FA DPAK-
3 / TO-
252-3

2SC5707 Bipolar Transistor, 50V, 0.2341 Pb-free Active NPN Low 0.24 8 50 100 6 0.83 - 200 560 330 1 IPAK /
8A, Low VCE(sat), VCE(sat) TP
(PNP)NPN Single TP/TP-
FA DPAK-
3 / TO-
252-3

2SC5964 Bipolar Transistor, (-)50V, 0.1333 Pb-free Active NPN Low 150 3 50 100 6 0.94 - 200 560 380 1.3 SOT-89
(-)3A, Low VCE(sat), VCE(sat) / PCP-1
(PNP)NPN Single PCP Halide
free

2SC5994 Bipolar Transistor, 50V, 0.1075 Pb-free Active NPN Low 0.3 2 50 100 6 0.9 - 200 560 420 1.3 SOT-89
2A, Low VCE(sat), NPN VCE(sat) / PCP-1
Single PCP

2SC6017 Bipolar Transistor, 50V, 0.2528 Pb-free Active NPN Low 0.36 10 50 100 6 0.93 - 200 700 200 0.95 IPAK /
10A, Low VCE(sat), VCE(sat) TP
(PNP)NPN Single TP/TP-
FA DPAK-
3 / TO-
252-3

2SC6082 Bipolar Transistor, 50 V, 0.4337 Pb-free Active NPN - - - 50 60 6 1.2 - 200 560 - 2 TO-
15 A, Low VCE(sat), NPN 220-3
TO-220F-3SG FullPak

2SC6094 Bipolar Transistor, 60V, 0.2373 Pb-free Active NPN Low 0.135 3 60 100 6.5 0.84 - 300 600 390 1.3 SOT-89
3A, Low VCE(sat), NPN VCE(sat) / PCP-1
Single PCP

2SC6095 Bipolar Transistor, 80V, 0.1867 Pb-free Active NPN Low 0.15 2.5 80 120 6.5 0.9 - 300 600 350 1.3 SOT-89
2.5A, Low VCE(sat), NPN VCE(sat) / PCP-1
Single PCP

2SC6096 Bipolar Transistor, 100V, 0.1848 Pb-free Active NPN Low 0.15 2 100 120 6.5 0.85 - 300 600 300 1.3 SOT-89
2A, Low VCE(sat), NPN VCE(sat) / PCP-1
Single PCP Halide
free

2SC6097 Bipolar Transistor, 60V, 0.1965 Pb-free Active NPN Low 0.15 3 60 100 6.5 0.84 - 300 600 390 0.8 IPAK /
3A, Low VCE(sat), NPN VCE(sat) TP
Single TP/TP-FA
DPAK-
3 / TO-
252-3

2SC6098 Bipolar Transistor, 80V, 0.3011 Pb-free Active NPN Low 0.165 2.5 80 120 6.5 0.9 - 300 600 350 0.8 DPAK-
2.5A, Low VCE(sat), NPN VCE(sat) 3 / TO-
Single TP/TP-FA 252-3
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

2SC6144SG Bipolar Transistor, 50V, 0.2977 Pb-free Active NPN Low 0.36 10 50 60 5 1.2 - 200 560 330 25 TO-
10A, Low VCE(sat), NPN VCE(sat) 220-3
TO-220F-3FS FullPak

2SD1048 Bipolar Transistor, (-)15V, 0.0589 Pb-free Active NPN Low 0.025 0.7 15 20 5 - - 200; 400; 250 0.2 SC-59-
(-)0.7A, Low VCE(sat), VCE(sat) 300 600 3 / CP-
(PNP)NPN Single CP 3

2SD1060 Bipolar Transistor, 50V, 0.5533 Pb-free Active NPN Low 0.3 5 50 60 6 - - 100; 200; 30 1.75 TO-
5A, Low VCE(sat), NPN VCE(sat) 140 280 220-3
TO-220-3L

2SD1620 Bipolar Transistor, 10V, 0.168 Pb-free Active NPN Low 0.4 3 10 30 6 - - 140 - 200 0.5 SOT-89
3A, Low VCE(sat), NPN VCE(sat) / PCP-1
Single PCP

2SD1623 Bipolar Transistor, 50V, 0.1532 Pb-free Active NPN Low 0.4 2 50 60 6 0.9 - 140; 280; 150 0.5 SOT-89
2A, Low VCE(sat), VCE(sat) 200 400 / PCP-1
(PNP)NPN Single PCP

2SD1624 Bipolar Transistor, (-)50V, 0.1743 Pb-free Active NPN Low 0.5 3 50 60 6 0.94 - 140; 280; - 1.5 SOT-89
(-)3A, Low VCE(sat), VCE(sat) 200 400 / PCP-1
(PNP)NPN Single PCP Halide
free

2SD1628 Bipolar Transistor, 20V, 0.1547 Pb-free Active NPN Low 0.5 5 20 60 6 1.5 - 160; 320; 120 0.5 SOT-89
5A, Low VCE(sat), NPN VCE(sat) 280 560 / PCP-1
Single PCP Halide
free

2SD1801 Bipolar Transistor, 50V, 0.1796 Pb-free Active NPN Low 0.4 2 50 60 6 0.9 - 140 280 - 0.8 IPAK /
2A, Low VCE(sat), VCE(sat) TP
(PNP)NPN Single TP/TP-
FA DPAK-
3 / TO-
252-3

2SD1802 Bipolar Transistor, 50V, 0.1824 Pb-free Active NPN Low 0.5 5 50 60 6 0.94 - 140; 280; - 1 IPAK /
3A, Low VCE(sat) NPN VCE(sat) 200 400 TP
Single TP/TP-FA
DPAK-
3 / TO-
252-3

2SD1803 Bipolar Transistor, (-)50V, 0.2456 Pb-free Active NPN Low 0.4 5 50 60 6 0.95 - 140; 280; - 1 IPAK /
(-)5A, Low VCE(sat), VCE(sat) 200 400 TP
(PNP)NPN Single TP/TP- Halide
FA free DPAK-
3 / TO-
252-3

2SD1805 Bipolar Transistor, 20V, 0.2295 Pb-free Active NPN Low 0.5 5 20 60 6 0.22 - 160; 320; 120 1 DPAK-
5A, Low VCE(sat), NPN VCE(sat) 280 560 3 / TO-
Single TP/TP-FA 252-3

IPAK /
TP

2SD1815 Bipolar Transistor, 100V, 0.2527 Pb-free Active NPN Low 0.4 3 100 120 6 0.9 - 140; 280; - 1 IPAK /
3A, Low VCE(sat), NPN VCE(sat) 200 400 TP
Single, TP/TP-FA
DPAK-
3 / TO-
252-3

2SD1816 Bipolar Transistor, 100V, 0.2485 Pb-free Active NPN Low 0.4 4 100 120 6 0.9 - 140; 280; - 1 IPAK /
4A, Low VCE(sat), NPN VCE(sat) 200 400 TP
Single Halide
free DPAK-
3 / TO-
252-3

30A02CH Bipolar Transistor, -30V, - 0.0596 Pb-free Active PNP Low 0.22 0.7 30 30 5 0.9 - 200 500 - 0.7 CPH-3
0.7A, Low VCE(sat), PNP VCE(sat)
Single CPH3

30A02MH Bipolar Transistor, -30V, - 0.0707 Pb-free Active PNP Low 0.22 0.7 30 30 5 0.9 - 200 500 520 0.6 SC-
0.7A, Low VCE(sat), PNP VCE(sat) 70FL /
Single MCPH3 Halide MCPH-
free 3

30C02CH Bipolar Transistor, 30V, 0.0544 Pb-free Active NPN Low 0.19 0.7 30 40 5 0.9 - 300 800 540 0.7 CPH-3
0.7A, Low VCE(sat), NPN VCE(sat)
Single CPH3

30C02MH Bipolar Transistor, 30V, 0.0771 Pb-free Active NPN Low 0.19 0.7 30 40 5 0.9 - 300 800 540 0.6 SC-
0.7A, Low VCE(sat), NPN VCE(sat) 70FL /
Single MCPH3 MCPH-
3

50A02MH Bipolar Transistor, -50V, - 0.0591 Pb-free Active PNP Low 0.12 0.5 50 50 5 0.9 - 200 500 - 0.6 SC-
0.5A, Low VCE(sat), PNP VCE(sat) 70FL /
Single MCPH3 MCPH-
3

50A02SS Bipolar Transistor, -50V, - 0.0473 Pb-free Active PNP Low 0.12 0.4 50 50 5 0.9 - 200 500 690 0.2 SOT-
0.4A, Low VCE(sat), PNP VCE(sat) 623 /
Single SSFP SSFP

50C02CH Bipolar Transistor, 50V, 0.0633 Pb-free Active NPN Low 0.1 0.5 50 60 5 0.9 - 300 800 - 0.7 CPH-3
0.5A, Low VCE(sat), NPN VCE(sat)
Single

50C02MH Bipolar Transistor, 50V, 0.0771 Pb-free Active NPN Low 0.1 0.5 50 60 5 0.9 - 300 800 - 0.6 SC-
0.5A, Low VCE(sat), NPN VCE(sat) 70FL /
Single MCPH3 MCPH-
3

50C02SS Bipolar Transistor, 50V, 0.0421 Pb-free Active NPN Low 0.1 0.4 50 60 5 0.9 - 300 800 500 0.2 SOT-
0.4A, Low VCE(sat), NPN VCE(sat) 623 /
Single SSFP SSFP

BC327(LEGACY PNP Bipolar Transistor 0.0303 Pb-free Active PNP Linear 0.7 0.8 45 50 5 - 1.2 160; 400; 260 0.625 TO-92-
FAIRCHILD) Switchi 250; 630 3
ng 100
Mediu TO-92-
m 3 LF
Power
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BC337(LEGACY NPN Bipolar Transistor 0.0249 Pb-free Active NPN Linear 0.7 0.8 45; 25 50; 30 5 - 1.2 100; 630; 210; 0.625 TO-92-
FAIRCHILD) Switchi 160; 400 100 3
ng 250
Mediu TO-92-
m 3 LF
Power;
Genera
l
Purpos
e

BC546 Transistor NPN Silicon 0.0215 Pb-free Active NPN Linear 0.6 0.1 65 80 6 0.7 0.55 110 450 150 0.625 TO-92-
Plastic Switchi 3
ng
Mediu TO-92-
m 3 LF
Power

BC547 NPN Epitaxial Silicon 0.0215 Pb-free Active NPN Genera 0.6 0.1 45 50 6 0.9 0.66 110; 220; 300; 0.625; TO-92-
Transistor l 200; 450; 150 0.5 3 LF
Purpos 420 800
e TO-92-
3

BC548 NPN Epitaxial Silicon 0.0319 Pb-free Active NPN Genera 0.6 0.1 30 30 5 0.9 0.66 200 450 300 0.5 TO-92-
Transistor l 3
Purpos
e

BC549 NPN Epitaxial Silicon 0.0245 Pb-free Active NPN Genera 0.6 0.1 30 30 5 0.9 0.66 200; 450; 300 0.5 TO-92-
Transistor l 420 800 3 LF
Purpos
e

BC550 NPN Epitaxial Silicon 0.0292 Pb-free Active NPN Genera 0.6 0.1 45 50 5 0.9 0.66 420 800 300 0.5 TO-92-
Transistor l 3
Purpos
e

BC556 PNP Epitaxial Silicon 0.0224 Pb-free Active PNP Genera 0.65 0.1 65 80 5 0.9 0.66 110; 220; 150 0.5 TO-92-
Transistor l 200 450 3
Purpos
e TO-92-
3 LF

BC557 50 V, 100 mA PNP Bipolar 0.0215 Pb-free Active PNP Genera 0.65 0.1 45 50 5 0.9 110; 220; 150 0.5 TO-92-
Junction Epitaxial Silicon l 200 450 3 LF
Transistor Purpos
e

BC559 PNP Epitaxial Silicon 0.0292 Pb-free Active PNP Genera 0.65 0.1 30 30 5 0.9 0.66 420 800 150 0.5 TO-92-
Transistor l 3 LF
Purpos
e

BC636 Transistor Silicon Plastic 0.028 Pb-free Active PNP Genera 0.5 0.5 80 80 5 - 1 100 250 150 0.625 TO-92-
PNP l 3 LF
Purpos
e

BC638 Transistor Silicon Plastic 0.034 Pb-free Active PNP Genera 0.5 0.5 60 80 5 - 1 100 250 150 0.625 TO-92-
PNP l 3 LF
Purpos
e

BC63916(LEGA NPN Medium Power 0.0779 Pb-free Active NPN Genera 0.5 1 80 100 5 - 1 100 250 100 0.83 TO-92-
CY FAIRCHILD) Transistor l 3 LF
Purpos
e

BC807-16L PNP Bipolar Transistor 0.0153 Pb-free Active PNP Genera 0.7 0.5 45 50 5 - 1.2 100 250 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC807-25L PNP Bipolar Transistor 0.0153 Pb-free Active PNP Genera 0.7 0.5 45 50 5 - 1.2 160 400 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC807-25W PNP General Purpose 0.014 Pb-free Active PNP Genera 0.7 0.5 45 50 5 - 1.2 160 400 100 0.46 SC-70-
Transistor l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BC807-40L PNP Bipolar Transistor 0.0156 Pb-free Active PNP Genera 0.7 0.5 45 50 5 - 1.2 250 600 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC807-40W PNP Bipolar Transistor 0.0427 Pb-free Active PNP Genera 0.7 0.5 45 50 5 - 1.2 250 600 100 0.46 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

BC808 PNP Bipolar Transistor 0.0132 Pb-free Active PNP Genera 0.7 0.5 25 30 5 - 1.2 160; 400; 100 0.225 SOT-
l 250 600 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC817-16L NPN Bipolar Transistor 0.0153 Pb-free Active NPN Genera 0.7 0.5 45 50 5 - 1.2 100 250 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC817-25L NPN Bipolar Transistor 0.0143 Pb-free Active NPN Genera 0.7 0.5 45 50 5 - 1.2 160 400 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC817-40L NPN Bipolar Transistor 0.0144 Pb-free Active NPN Genera 0.7 0.5 45 50 5 - 1.2 250 600 100 0.25 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC817-40W 45 V, 0.5 A, General 0.0427 Pb-free Active NPN Genera 0.7 0.5 45 50 5 - 1.2 250 600 100 0.46 SC-70-
Purpose NPN Transistor l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

BC818 NPN Bipolar Transistor 0.0156 Pb-free Active NPN Genera 0.7 0.5 25 30 5 - 1.2 250 600 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC846(LEGACY NPN Epitaxial Silicon 0.0252 Pb-free Active NPN Genera 0.25 0.1 65 80 6 0.9 0.72 420 800 300 0.31 SOT-
FAIRCHILD) Transistor l 23-3
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BC846AL NPN Bipolar Transistor 0.0116 Pb-free Active NPN Genera 0.25 0.1 65 80 6 0.7 0.66 110 220 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC846BDW1 Dual NPN Bipolar 0.0264 Pb-free Active Dual Genera 0.25 0.1 65 80 6 0.7 0.66 200 450 100 0.38 SC-88-
Transistor NPN l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

BC846BL NPN Bipolar Transistor 0.0116 Pb-free Active NPN Genera 0.25 0.1 65 80 6 0.7 0.66 200 450 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC846BM3 NPN Bipolar Transistor 0.026 Pb-free Active NPN Genera 0.25 0.1 65 80 6 0.7 0.66 200 450 100 0.265 SOT-
l 723-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC846BPDW1 NPN PNP Bipolar 0.0264 Pb-free Active Comple Genera 0.6 0.1 65 80 6 0.7 0.66 200 475 100 0.38 SC-88-
Transistor mentar l 6 / SC-
Halide y Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

BC846BW NPN Bipolar Transistor 0.0167 Pb-free Active NPN Genera 0.25 0.1 65 80 6 0.7 0.66 200 450 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

BC846C Dual NPN Bipolar 0.0233 Pb-free Active Dual Genera 0.25 0.1 45 50 6 0.7 0.66 420 800 100 0.38 SC-88-
Transistor NPN l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

BC847AL NPN Bipolar Transistor 0.0116 Pb-free Active NPN Genera 0.25 0.1 45 45 6 0.7 0.66 110 220 100 0.225 SOT-
l 23-3
Halide Purpos
free e

BC847AW NPN Bipolar Transistor 0.0141 Pb-free Active NPN Genera 0.25 0.1 45 50 6 0.7 0.66 110 220 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BC847BDW1 Dual NPN Bipolar 0.0264 Pb-free Active Dual Genera 0.25 0.1 45 50 6 0.7 0.66 200 450 100 0.38 SC-88-
Transistor NPN l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

BC847BL NPN Bipolar Transistor 0.0116 Pb-free Active NPN Genera 0.25 0.1 45 50 6 0.7 0.66 200 450 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC847BM3 Low and Medium Voltage 0.0232 Pb-free Active NPN Genera 0.25 0.1 45 50 6 0.7 0.66 200 450 100 0.26 SOT-
NPN Bipolar Transistor l 723-3
Halide Purpos
free e

BC847BP NPN PNP Bipolar 0.0155 Pb-free Active Comple Genera 0.6 0.1 45 50 6 0.7 0.66 200 475 100 0.38 SC-88-
Transistor mentar l 6 / SC-
Halide y Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

BC847BPDXV6 Dual NPN PNP Bipolar 0.0567 Pb-free Active Comple Genera 0.25 0.1 45 50 6 0.7 0.66 200 475 100 0.5 SOT-
Transistor mentar l 563
Halide y Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC847BT NPN Bipolar Transistor 0.0233 Pb-free Active NPN Genera 0.25 0.1 45 50 6 0.7 0.66 200 450 100 0.2 SC-75-
l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC847BW NPN Bipolar Transistor 0.0167 Pb-free Active NPN Genera 0.25 0.1 45 50 6 0.7 0.66 200 450 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

BC847CDXV6 NPN Bipolar Transistor 0.0544 Pb-free Active Dual Genera 0.25 0.1 45 50 6 0.7 0.66 420 800 100 0.357 SOT-
NPN l 563
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC847CL NPN Bipolar Transistor 0.0113 Pb-free Active NPN Genera 0.25 0.1 45 50 6 0.7 0.66 420 800 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BC847CW NPN Bipolar Transistor 0.0167 Pb-free Active NPN Genera 0.25 0.1 45 50 6 0.7 0.66 420 800 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

BC848AL NPN Bipolar Transistor 0.0107 Pb-free Active NPN Genera 0.25 0.1 30 30 5 0.7 0.66 110 220 100 0.225 SOT-
l 23-3
Halide Purpos
free e

BC848BL NPN Bipolar Transistor 0.0099 Pb-free Active NPN Genera 0.25 0.1 30 30 5 0.7 0.66 200 450 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC848BW NPN Bipolar Transistor 0.0167 Pb-free Active NPN Genera 0.25 0.1 30 30 5 0.7 0.66 200 450 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

BC848CDW1 Dual NPN Bipolar 0.0224 Pb-free Active Dual Genera 0.25 0.1 30 30 5 0.7 0.66 420 800 100 0.38 SC-88-
Transistor NPN l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

BC848CL NPN Bipolar Transistor 0.0113 Pb-free Active NPN Genera 0.25 0.1 30 30 5 0.7 0.66 420 800 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC848CPD NPN PNP Bipolar 0.0317 Pb-free Active Comple Genera 0.6 0.1 30 30 6 0.7 0.66 420 800 100 0.38 SC-88-
Transistor mentar l 6 / SC-
Halide y Purpos 70-6 /
free e SOT-
363-6

BC848CW NPN Bipolar Transistor 0.0131 Pb-free Active NPN Genera 0.25 0.1 30 30 5 0.7 0.66 420 800 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

BC849BL NPN Bipolar Transistor 0.0099 Pb-free Active NPN Genera 0.25 0.1 30 30 5 0.7 0.66 200 450 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC849CL NPN Bipolar Transistor 0.0113 Pb-free Active NPN Genera 0.25 0.1 30 30 5 0.7 0.66 420 800 100 0.225 SOT-
l 23-3
Halide Purpos
free e

BC850BL NPN Bipolar Transistor 0.0116 Pb-free Active NPN Genera 0.25 0.1 45 50 6 0.7 0.66 200 450 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BC850CL NPN Bipolar Transistor 0.0113 Pb-free Active NPN Genera 0.25 0.1 45 50 6 0.7 0.66 420 800 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC856 SERIES PNP Bipolar Transistor 0.026 Pb-free Active PNP Genera 0.3 0.1 65 80 5 0.7 0.6 220 475 100 0.265 SOT-
l 723-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC856AL PNP Bipolar Transistor 0.0116 Pb-free Active PNP Genera 0.7 0.1 65 80 5 0.7 0.6 125 250 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC856B Dual PNP Bipolar 0.0264 Pb-free Active Dual Genera 0.3 0.1 65 80 5 0.7 0.6 220 475 100 0.38 SC-88-
Transistor PNP l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

BC856BL PNP Bipolar Transistor 0.0116 Pb-free Active PNP Genera 0.3 0.1 65 80 5 0.7 0.6 220 475 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC856BW PNP Bipolar Transistor 0.0167 Pb-free Active PNP Genera 0.3 0.1 65 80 5 0.7 0.6 220 475 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

BC857AL PNP Bipolar Transistor 0.0116 Pb-free Active PNP Genera 0.3 0.1 45 50 5 0.7 0.6 125 250 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC857BDW1 Dual PNP Bipolar 0.0188 Pb-free Active Dual Genera 0.3 0.1 45 50 5 0.7 0.6 220 475 100 0.38 SC-88-
Transistor PNP l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

BC857BL PNP Bipolar Transistor 0.0116 Pb-free Active PNP Genera 0.3 0.1 45 50 5 0.7 0.6 220 475 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BC857BT PNP Bipolar Transistor 0.0233 Pb-free Active PNP Genera 0.3 0.1 45 50 5 0.7 0.6 220 475 100 0.2 SC-75-
l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC857BW PNP Bipolar Transistor 0.0167 Pb-free Active PNP Genera 0.3 0.1 45 50 5 0.7 0.6 220 475 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

BC857CDW1 Dual PNP Bipolar 0.0317 Pb-free Active Dual Genera 0.3 0.1 45 50 5 0.7 0.6 420 800 100 0.38 SC-88-
Transistor PNP l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6

BC857CL PNP Bipolar Transistor 0.0113 Pb-free Active PNP Genera 0.3 0.1 45 50 5 0.7 0.6 420 800 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC857CW 45 V, 100 mA, PNP 0.0167 Pb-free Active PNP Genera 0.3 0.1 45 50 5 0.7 0.6 420 800 100 0.15 SC-70-
Bipolar Junction Transistor l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

BC858AL PNP Bipolar Transistor 0.0116 Pb-free Active PNP Genera 0.3 0.1 30 30 5 0.7 0.6 125 250 100 0.225 SOT-
l 23-3
Halide Purpos
free e

BC858AW PNP Bipolar Transistor 0.0129 Pb-free Active PNP Genera 0.3 0.1 30 30 5 0.7 0.6 125 250 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

BC858BL PNP Bipolar Transistor 0.0116 Pb-free Active PNP Genera 0.3 0.1 30 30 5 0.7 0.6 220 475 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BC858BW PNP Bipolar Transistor 0.0167 Pb-free Active PNP Genera 0.3 0.1 30 30 5 0.7 0.6 220 475 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

BC858CDXV6 PNP Bipolar Transistor 0.076 Pb-free Active Dual Genera 0.3 0.1 30 30 5 0.7 0.6 420 800 100 0.357 SOT-
PNP l 563
Halide Purpos
free e

BC858CL PNP Bipolar Transistor 0.0113 Pb-free Active PNP Genera 0.3 0.1 30 30 5 0.7 0.6 420 800 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BCP52 PNP General Purpose 0.1415 Pb-free Active PNP Genera 0.5 1.2 60 60 5 - 1 40 250 - 1.5 SOT-
Amplifier l 223-4 /
Purpos TO-
e 261-4
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BCP53 PNP 80 V Bipolar 0.08 Pb-free Active PNP Genera 0.5 1.5 80 100 5 - 1 63; 160; 50 1.5 SOT-
Transistor l 100; 40 250 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

BCP54 NPN General Purpose 0.1431 Pb-free Active NPN Genera 0.5 1.5 45 45 5 - 1 40 250 - 1.5 SOT-
Amplifier l 223-4 /
Purpos TO-
e 261-4

BCP55 NPN Epitaxial Silicon 0.1267 Pb-free Active NPN Genera 0.5 1.5 60 60 5 - 1 40 250 - 1.5 SOT-
Transistor l 223-4 /
Purpos TO-
e 261-4

BCP56 NPN Bipolar Transistor 0.08 Pb-free Active NPN Genera 0.5 1 80 100 5 - 1 63; 160; - 1.5 SOT-
l 100; 40 250 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

BCP68T NPN Bipolar Transistor 0.1 Pb-free Active NPN Genera 0.5 1 20 25 5 - 1 85 375 - 1.5 SOT-
l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

BCP69 PNP Bipolar Transistor 0.0733 Pb-free Active PNP Genera 0.5 1 20 25 5 - 1 85 375 - 1.5 SOT-
l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

BCV71 NPN General Purpose 0.0284 Pb-free Active NPN Genera 0.25 0.5 60 80 5 - 0.55 110 220 - 0.35 SOT-
Amplifier l 23-3
Halide Purpos
free e

BCW30L PNP Bipolar Transistor 0.0156 Pb-free Active PNP Genera 0.3 0.1 32 32 5 - 0.6 215 500 - 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BCW32L NPN Bipolar Transistor 0.0143 Pb-free Active NPN Genera 0.25 0.1 32 32 5 - 0.55 200 450 - 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BCW33L NPN Bipolar Transistor 0.0143 Pb-free Active NPN Genera 0.25 0.1 32 32 5 - 0.55 420 800 - 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BCW65AL NPN Bipolar Transistor 0.0143 Pb-free Active NPN Genera 0.7 0.8 32 60 5 2 - 100; 250; 100 0.225 SOT-
l 250 630 23-3
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BCW66 NPN Bipolar Transistor 0.0165 Pb-free Active NPN Genera 0.7 0.8 45 75 5 2 - 160 400 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BCW68GL PNP Bipolar Transistor 0.0183 Pb-free Active PNP Genera 0.7 0.8 45 60 5 2 - 120 400 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BCW70L PNP Bipolar Transistor 0.0145 Pb-free Active PNP Genera 0.3 0.1 45 45 5 - 0.6 215 500 - 0.225 SOT-
l 23-3
Halide Purpos
free e

BCW71 NPN General Purpose 0.0277 Pb-free Active NPN Genera 0.25 0.5 45 50 5 0.85 0.6 110 220 330 0.35 SOT-
Amplifier l 23-3
Halide Purpos
free e

BCW72L NPN Bipolar Transistor 0.0169 Pb-free Active NPN Genera 0.25 0.1 45 50 5 0.85 0.6 200 450 - 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BCX17L PNP Bipolar Transistor 0.0271 Pb-free Active PNP Genera 0.62 0.5 45 50 5 - 1.2 100 600 - 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BCX19L NPN Bipolar Transistor 0.0271 Pb-free Active NPN Genera 0.62 0.5 45 50 5 - 1.2 100 600 - 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BD135 1.5 A, 45V NPN Power 0.1735 Pb-free Active NPN Genera 0.5 1.5 45 40 250 - 12.5 TO-
Bipolar Junction Transistor l 225-3
Halide Purpos
free e

BD13510 1.5 A, 45V NPN Power 0.1864 Pb-free Active NPN Genera 0.5 1.5 45 45 5 - 1 63 160 - 12.5 TO-
Bipolar Junction Transistor l 126-3
Purpos
e

BD13516 1.5 A, 45V NPN Power 0.176 Pb-free Active NPN Genera 0.5 1.5 45 45 5 - 1 100 250 - 12.5 TO-
Bipolar Junction Transistor l 126-3
Purpos
e

BD136 1.5 A, 45 V PNP Bipolar 0.178 Pb-free Active PNP Genera 0.5 1.5 45 45 5 - 1 40 250 - 12.5 TO-
Power Transistor l 225-3
Halide Purpos
free e

BD13610 1.5 A, 45 V PNP Bipolar 0.184 Pb-free Active PNP Genera 0.5 1.5 45 45 5 - 1 63 160 - 12.5 TO-
Junction Medium Power l 126-3
Transistor Purpos
e

BD137 1.5 A, 60 V NPN Power 0.1668 Pb-free Active NPN Genera 0.5 1.5 60 60 5 - 1 40 250 - 12.5 TO-
Bipolar Junction Transistor l 225-3
Halide Purpos
free e

BD13716 1.5 A, 60 V NPN Power 0.1349 Pb-free Active NPN Genera 0.5 1.5 60 60 5 - 1 100 250 - 12.5 TO-
Bipolar Junction Transistor l 126-3
Purpos
e

BD138 1.5 A, 60 V PNP Power 0.2067 Pb-free Active PNP Genera 0.5 1.5 60 60 5 - 1 40 250 - 12.5 TO-
Bipolar Junction Transistor l 225-3
Halide Purpos
free e

BD13810 1.5 A, 60 V PNP Bipolar 0.184 Pb-free Active PNP Genera 0.5 1.5 60 60 5 - 1 63 160 - 12.5 TO-
Power Junctions l 126-3
Transistor Purpos
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BD13816 1.5 A, 60 V PNP Bipolar 0.184 Pb-free Active PNP Genera 0.5 1.5 60 60 5 - 1 100 250 - 12.5 TO-
Power Junctions l 126-3
Transistor Purpos
e

BD139 1.5 A, 80 V NPN Power 0.1933 Pb-free Active NPN Genera 0.5 1.5 80 100 5 - 1 40 250 - 12.5 TO-
Bipolar Junction Transistor l 225-3
Halide Purpos
free e

BD13910 1.5 A, 80 V NPN Power 0.184 Pb-free Active NPN Genera 0.5 1.5 80 80 5 - 1 63 160 - 12.5 TO-
Bipolar Junction Transistor l 126-3
Purpos
e

BD13916 1.5 A, 80 V NPN Power 0.184 Pb-free Active NPN Genera 0.5 1.5 80 80 5 - 1 100 250 - 12.5 TO-
Bipolar Junction Transistor l 126-3
Purpos
e

BD140 1.5 A, 80 V PNP Bipolar 0.1752 Pb-free Active PNP Genera 0.5 1.5 80 100 5 - 1 40 250 - 12.5 TO-
Power Transistor l 126-3
Halide Purpos
free e TO-
225-3

BD159 0.5 A, 350 V NPN Bipolar 0.1615 Pb-free Active NPN Genera - 0.5 350 375 5 - - 30 240 - 20 TO-
Power Transistor l 225-3
Halide Purpos
free e

BD175 NPN Epitaxial Silicon 0.1888 Pb-free Active NPN Genera 0.8 3 45 45 5 0.8 1.3 63; 100 160; 3 30 TO-
Transistor l 250 126-3
Purpos
e

BD179 3.0 A, 80 V Medium Power 0.1831 Pb-free Active NPN Genera 0.8 3 80 80 5 - 1.3 63 160 3 30 TO-
NPN Bipolar Power l 225-3
Transistor Halide Purpos
free e

BD180 1.0 A, 80 V PNP Bipolar 0.1928 Pb-free Active PNP Genera 0.8 1 80 80 5 - 1.3 40 250 3 30 TO-
Power Transistor l 225-3
Halide Purpos
free e

BD234 2.0 A, 45 V PNP Bipolar 0.2667 Pb-free Active PNP Genera 0.6 2 45 60 5 - 1.3 40 - 3 25 TO-
Power Transistor l 225-3
Halide Purpos
free e

BD237 2.0 A, 80 V, 25W NPN 0.1968 Pb-free Active NPN Genera 0.6 2 80 100 5 - 1.3 40 - 3 25 TO-
Bipolar Power Transistor l 225-3
Halide Purpos
free e

BD239C NPN Epitaxial Silicon 0.2293 Pb-free Active NPN Genera 0.7 2 100 115 5 - 1.3 40 - - 30 TO-
Transistor l 220-3
Purpos
e

BD241C 3.0 A, 100 V, 40 W NPN 0.2432 Pb-free Active NPN Genera 1.2 3 100 115 5 - 1.8 2.5 - 3 40 TO-
Bipolar Power Transistor l 220-3
Purpos
e

BD242B 3.0 A, 80 V PNP Bipolar 0.2369 Pb-free Active PNP Genera 1.2 3 80 90 5 - 1.8 25 - 3 40 TO-
Power Transistor l 220-3
Purpos
e

BD242C 3.0 A, 100 V PNP Bipolar 0.2933 Pb-free Active PNP Genera 1.2 3 100 115 5 - 1.8 25 - 3 40 TO-
Power Transistor l 220-3
Purpos
e

BD243C 6.0 A, 100 V NPN Bipolar 0.3867 Pb-free Active NPN Genera 1.5 6 100 100 5 - 2 20 - 3 65 TO-
Power Transistor l 220-3
Purpos
e

BD244A PNP Epitaxial Silicon 0.3363 Pb-free Active PNP Genera 1.5 6 60 60 5 - 2 30 - - 65 TO-
Transistor l 220-3
Purpos
e

BD244B 6.0 A, 80 V PNP Bipolar 0.4007 Pb-free Active PNP Genera 1.5 6 80 80 5 - 2 30 - 3 65 TO-
Power Transistor l 220-3
Purpos
e

BD244C 6.0 A, 100 V PNP Bipolar 0.3933 Pb-free Active PNP Genera 1.5 6 100 100 5 - 2 30 - 3; - 65 TO-
Power Transistor l 220-3
Purpos
e

BD433 NPN Epitaxial Silicon 0.2528 Pb-free Active NPN Genera 0.5 4 22 22 5 - 1.1 40 130 3 36 TO-
Transistor l 126-3
Purpos
e

BD434 PNP Epitaxial Silicon 0.2715 Pb-free Active PNP Genera 0.5 4 22 22 5 - 1.1 40 140 3 36 TO-
Transistor l 126-3
Purpos
e

BD435 Medium Power NPN 0.1796 Pb-free Active NPN Genera 0.5 4 32 32 5 - 1.1 85 475 3 36 TO-
Bipolar Power Transistor l 225-3
Halide Purpos
free e

BD436(LEGACY PNP Bipolar Power 0.2508 Pb-free Active PNP Genera 0.5 4 32 32 5 - 1.1 85 475 3 36 TO-
FAIRCHILD) Transistor l 126-3
Purpos
e

BD437 Medium Power NPN 0.1961 Pb-free Active NPN Genera 0.8 4 45 45 5 - 1.1 85 375 3 36 TO-
Bipolar Power Transistor l 225-3
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BD438 4.0 A, 45 V PNP Bipolar 0.2508 Pb-free Active PNP Genera 0.7 4 45 45 5 - 1.1 85 375; 3 36 TO-
Power Transistor l 475 225-3
Halide Purpos
free e TO-
126-3

BD439 Medium Power NPN 0.1977 Pb-free Active NPN Genera 0.8 4 60 60 5 - 1.1 40 475 3 36 TO-
Bipolar Power Transistor l 225-3
Halide Purpos
free e

BD440 4.0 A, 60 V PNP Bipolar 0.2715 Pb-free Active PNP Genera 0.8 4 60 60 5 - 1.5 40 - 3 36 TO-
Power Transistor l 126-3
Purpos
e

BD441 Medium Power NPN 0.1971 Pb-free Active NPN Genera 0.8 4 80 80 5 - 1.1 40 475 3 36 TO-
Bipolar Power Transistor l 225-3
Halide Purpos
free e

BD442 4.0 A, 80 V PNP Bipolar 0.1829 Pb-free Active PNP Genera 0.8 4 80 80 5 - 1.5 40 475 3 36 TO-
Power Transistor l 225-3
Halide Purpos
free e

BD787 4.0 A, 60 V NPN Bipolar 0.1837 Pb-free Active NPN Genera 0.4 4 60 80 6 2 1.8 40 250 50 15 TO-
Power Transistor l 225-3
Halide Purpos
free e

BD788 4.0 A, 60 V PNP Bipolar 0.1417 Pb-free Active PNP Genera 0.4 4 60 80 6 2 1.8 40 250 50 15 TO-
Power Transistor l 225-3
Halide Purpos
free e

BD809 High Power NPN Bipolar 0.35 Pb-free Active NPN Genera 1.1 10 80 80 5 - 1.6 30 - 1.5 90 TO-
Transistor l 220-3
Purpos
e

BD810 High Power PNP 0.4171 Pb-free Active PNP Genera 1.1 10 80 80 5 - 1.6 30 - 1.5 90 TO-
BipolarTransistor l 220-3
Purpos
e

BF720 NPN Bipolar Small Signal 0.1089 Pb-free Active NPN Genera 0.6 0.1 300 300 5 - - 50 - 60 1.5 SOT-
Transistor l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

BF721 PNP Bipolar Small Signal 0.0852 Pb-free Active PNP Genera 0.8 0.05 300 300 5 - - 50 - 60 1.5 SOT-
Transistor l 223-4 /
Halide Purpos TO-
free e 261-4D

BSP16 High Voltage PNP Bipolar 0.0852 Pb-free Active PNP Genera 2 0.1 300 350 6 - - 30 120 15 1.5 SOT-
Transistor l 223-4 /
Halide Purpos TO-
free e 261-4D

BSR14 NPN General Purpose 0.0291 Pb-free Active NPN Genera 0.3 0.8 40 75 6 0.6 - 50 300 300 0.35 SOT-
Amplifier l 23-3
Halide Purpos
free e

BSR17A NPN General Purpose 0.0264 Pb-free Active NPN Genera 0.2 0.2 40 60 6 0.65 - 100 300 300 0.35 SOT-
Amplifier l 23-3
Halide Purpos
free e

BSS63L High Voltage PNP Bipolar 0.0271 Pb-free Active PNP Genera 0.25 0.1 100 110 - 0.9 - 30 - 50 0.225 SOT-
Transistor l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

BSS64L NPN Bipolar Small Signal 0.0192 Pb-free Active NPN Genera 0.2 0.1 80 120 5 - - 20 - 60 0.225 SOT-
Transistor l 23-3
Halide Purpos
free e

BSV52L NPN Bipolar Transistor 0.0427 Pb-free Active NPN Genera 0.4 0.1 12 20 - 0.7 - 40 120 400 0.225 SOT-
l 23-3
Halide Purpos
free e

BU406 NPN Bipolar Power 0.4539 Pb-free Active NPN Genera 1 7 200 400 6 1.2 - - - 10 60 TO-
Transistor l 220-3
Purpos
e

BUL45D2 NPN Bipolar Power 0.4513 Pb-free Active NPN Genera 0.8 5 400 700 12 0.8 - 22 - - 75 TO-
Transistor l 220-3
Purpos
e

BUT11A NPN Silicon Transistor 0.5743 Pb-free Active NPN Genera 1.5 5 450 1000 9 1.3 - - - - 100 TO-
l 220-3
Purpos
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

BUT11AF 10 Amp, 450 V NPN 0.558 Pb-free Active NPN Genera 1.5 5 450 1000 9 1.3 40 TO-
Power Bipolar Transistor l 220-3
Purpos FullPak
e

BUV21 40 A, 200V NPN Bipolar 9.8906 Pb-free Active NPN Genera 0.6 40 200 250 7 1.5 - 20 60 8 250 TO-
Power Transistor l 204-2 /
Purpos TO-3-2
e

BUV22 40 A, 250 V NPN Bipolar 9.8152 Pb-free Active NPN Genera 1 40 250 300 7 1.5 - 20 60 8 250 TO-
Power Transistor l 204-2 /
Purpos TO-3-2
e

BUX85 2.0 A, 450 V 50 W NPN 0.3333 Pb-free Active NPN Genera 0.8 2 450 1000 5 1.1 - 30 - 4 50 TO-
Bipolar Power Transistor l 220-3
Purpos
e

CPH3101 Bipolar Transistor, -30V, - 0.1052 Pb-free Active PNP Low 0.6 2 30 30 6 0.85 - 200 400 150 0.9 CPH-3
2A, Low VCE(sat), PNP VCE(sat)
Single CPH3

CPH3105 Bipolar Transistor, (-)50V, 0.1791 Pb-free Active PNP Low 0.2 3 50 100 3 0.88 - 200 560 360 0.9 CPH-3
(-)3A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH3

CPH3107 Bipolar Transistor, -15V, - 0.2535 Pb-free Active PNP Low 0.15 6 15 15 5 0.85 - 200 560 140 0.9 CPH-3
6A, Low VCE(sat), PNP VCE(sat)
Single CPH3

CPH3109 Bipolar Transistor, (-)30V, 0.1708 Pb-free Active PNP Low 0.23 3 30 40 5 0.83 - 200 560 380 0.9 CPH-3
(-)3A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH3

CPH3114 Bipolar Transistor, -15V, - 0.1023 Pb-free Active PNP Low 0.18 1.5 15 15 5 0.85 - 200 560 350 0.9 CPH-3
1.5A, Low VCE(sat), PNP VCE(sat)
Single CPH3

CPH3115 Bipolar Transistor, (-)30V, 0.1008 Pb-free Active PNP Low 0.375 1.5 30 40 5 0.85 - 200 560 450 0.9 CPH-3
(-)1.5A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH3

CPH3116 Bipolar Transistor, (-)50V, 0.0775 Pb-free Active PNP Low 0.43 1 50 80 5 0.81 - 200 560 420 0.9 CPH-3
(-)1A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH3

CPH3121 Single PNP Bipolar 0.12 Pb-free Active PNP Low 0.165 3 12 15 5 0.85 - 200 560 - 0.9 CPH-3
Transistor, -12 V, -3 A VCE(sat)

CPH3122 Bipolar Transistor, -30V, - 0.0992 Pb-free Active PNP Low 0.27 3 30 30 5 0.83 - 200 560 - 0.9 CPH-3
3A, Low VCE(sat) PNP VCE(sat)
Single CPH3

CPH3123 Bipolar Transistor, (-)50V, 0.12 Pb-free Active PNP Low 0.23 3 50 100 6 0.88 - 200 560 390 0.9 CPH-3
(-)3A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH3

CPH3140 Bipolar Transistor, (- 0.1135 Pb-free Active PNP Low 0.6 1 100 120 6 0.85 - 140 400 - 0.9 CPH-3
)100V, (-)1A, Low VCE(sat)
VCE(sat), (PNP)NPN
Single CPH3

CPH3145 Low VCE(sat) Bipolar 0.116 Pb-free Active PNP Low 0.33 2 50 80 6 0.9 - 200 560 420 0.9 CPH-3
Transistor, PNP, -50V, -2A VCE(sat)

CPH3205 Bipolar Transistor, (-)50V, 0.1733 Pb-free Active NPN Low 0.12 3 50 100 6 0.88 - 200 560 380 0.9 CPH-3
(-)3A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH3

CPH3209 Bipolar Transistor, (-)30V, 0.1108 Pb-free Active NPN Low 0.18 3 30 40 5 0.83 - 200 560 450 0.9 CPH-3
(-)3A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH3

CPH3212 Bipolar Transistor, 50V, 0.1924 Pb-free Active NPN Low 0.15 5 50 100 6 0.8 - 200 560 - 0.9 CPH-3
5A, Low VCE(sat), NPN VCE(sat)
Single CPH3

CPH3215 Bipolar Transistor, (-)30V, 0.096 Pb-free Active NPN Low 0.225 1.5 30 40 5 0.85 - 200 569 500 0.9 CPH-3
(-)1.5A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH3 Halide
free

CPH3216 Bipolar Transistor, (-)50V, 0.0647 Pb-free Active NPN Low 0.19 1 50 80 5 0.81 - 200 560 420 0.9 CPH-3
(-)1A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH3

CPH3223 Bipolar Transistor, (-)50V, 0.1436 Pb-free Active NPN Low 0.13 3 50 100 6 0.88 - 200 560 380 0.9 CPH-3
(-)3A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH3

CPH3240 Bipolar Transistor, (- 0.1124 Pb-free Active NPN Low 0.4 1 100 120 6 0.85 - 140 400 - 0.9 CPH-3
)100V, (-)1A, Low VCE(sat)
VCE(sat), (PNP)NPN
Single CPH3

CPH3245 Low VCE(sat) Bipolar 0.1132 Pb-free Active NPN Low 0.26 2 50 80 6 0.9 - 200 560 420 0.9 CPH-3
Transistor, NPN, 50V, 2A VCE(sat)

CPH5504 Bipolar Transistor, 50V, 0.2031 Pb-free Active Dual Low 0.15 3 50 100 6 0.88 - 200 560 - 1.2 CPH-5
3A, Low VCE(sat), NPN NPN VCE(sat)
Dual CPH5

CPH5505 Bipolar Transist, -30V, - 0.26 Pb-free Active Dual Low 0.23 3 30 30 5 0.83 - 200 560 380 1.2 CPH-5
3A, Low VCE(sat), PNP PNP VCE(sat)
Dual CPH5

CPH5506 Bipolar Transistor, (-)30V, 0.1344 Pb-free Active Comple Low 0.375 1.5 30 40 5 0.85 - 200 560 500 1.2 CPH-5
(-)5A, Low VCE(sat) mentar VCE(sat)
Complementary Dual y
CPH5

CPH5517 Bipolar Transistor, (-)50V, 0.1345 Pb-free Active Comple Low 0.43 1 50 60 5 0.81 - 200 560 420 0.9 CPH-5
(-)3A, Low VCE(sat), mentar VCE(sat)
Complementary Dual y
CPH5
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

CPH5518 Bipolar Transistor, (-)50V, 0.1449 Pb-free Active Comple Low 0.19 1 80 80 5 0.81 - 200 560 420 1.2 CPH-5
(-)3A, Low VCE(sat) mentar VCE(sat)
Complementary Dual Halide y
CPH5 free

CPH5520 Bipolar Transistor, (-)50V, 0.18 Pb-free Active Comple Low 0.33 2 50 80 6 0.9 - 200 560 420 1.2 CPH-5
(-)5A, Low VCE(sat), mentar VCE(sat)
Complementary Dual y
CPH5

CPH5524 Bipolar Transistor, (-)50V, 0.1468 Pb-free Active Comple Low 0.23 3 50 100 6 0.88 - 200 560 380 1.2 CPH-5
(-)6A, Low VCE(sat), mentar VCE(sat)
Complementary Dual y
CPH5

CPH5541 Bipolar Transistor, (-)30V, 0.1188 Pb-free Active Comple Low 0.19 0.7 30 40 5 0.9 - 300 800 540 0.6 CPH-5
(-)3A, Low VCE(sat), mentar VCE(sat)
Complementary Dual y

CPH5901 N-Channel JFET and NPN 0.1077 Pb-free Active NPN Low 0.4 0.15 50 55 6 0.8 - 135 400 - 0.5 CPH-5
Bipolar Transistor, 15V, 6 VCE(sat)
to 20mA, 50V, 150mA,
Composite type CPH5

CPH5902 N-Channel JFET and NPN 0.1891 Pb-free Active NPN Low 0.4 0.15 50 55 6 0.8 - 135 400 - 0.35 CPH-5
Bipolar Transistor, 15V, 10 VCE(sat)
to 32mA, 50V, 150mA,
Composite type CPH5

CPH5905 N-Channel JFET and NPN 0.1667 Pb-free Active NPN Low 0.4 0.15 50 55 6 0.8 - 135 400 - 0.5 CPH-5
Bipolar Transistor, 15V, 10 VCE(sat)
to 32mA, 50V, 150mA,
Composite type, CPH5

CPH6102 Bipolar Transisitor, -50V, - 0.1267 Pb-free Active PNP Low 0.5 1 50 60 5 0.9 - 200 560 150 1.3 CPH-6
1A, Low VCE(sat) PNP VCE(sat)
Single CPH6

CPH6122 Bipolar Transistor, -30V, - 0.12 Pb-free Active PNP Low 0.18 3 30 30 5 0.83 - 200 560 400 1.3 CPH-6
3A, Low VCE(sat), PNP VCE(sat)
Single CPH6

CPH6123 Bipolar Transistor, (-)50V, 0.1395 Pb-free Active PNP Low 0.23 3 50 100 6 0.88 - 200 560 390 1.3 CPH-6
(-)3A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH6

CPH6153 Bipolar Transistor, -20V, - 0.1147 Pb-free Active PNP Low 0.195 3 20 20 5 0.93 - 200 560 400 1.3 CPH-6
3A, Low VCE(sat), PNP VCE(sat)
Single CPH6

CPH6223 Bipolar Transistor, (-)50V, 0.1356 Pb-free Active NPN Low 0.13 3 50 100 6 0.88 - 200 560 380 1.3 CPH-6
(-)3A, Low VCE(sat), VCE(sat)
(PNP)NPN Single CPH6

D44H11 Power Bipolar Transistor, 0.48 Pb-free Active NPN Genera 1 10 80 - 5 1.5 - 40 - - 50 TO-
NPN, 10 A, 80 V l 220-3
Purpos
e

D44H8 Power Bipolar Transistor, 0.48 Pb-free Active NPN Genera 1 10 60 - 5 1.5 - 40 - - 50 TO-
NPN, 10 A, 60 V l 220-3
Purpos
e

D44VH Power Bipolar Transistor, 0.48 Pb-free Active NPN Genera 0.4 15 80 - 7 1.2 - 20 - - 83 TO-
NPN, 15 A, 80 V l 220-3
Purpos
e

D45H11 Power Bipolar Transistor, 0.4067 Pb-free Active PNP Genera 1 10 80 - 5 1.5 - 40 - - 50 TO-
PNP, 10 A, 80 V l 220-3
Purpos
e

D45H8 Power Bipolar Transistor, 0.4067 Pb-free Active PNP Genera 1 10 60 - 5 1.5 - 40 - - 50 TO-
PNP, 10 A, 80 V l 220-3
Purpos
e

D45VH Power Bipolar Transistor, 0.4067 Pb-free Active PNP Genera 1 15 80 - 7 1.5 - 20 - - 83 TO-
PNP, 15 A, 80 V l 220-3
Purpos
e

ECH8102 Bipolar Transistor, -30V, - 0.2119 Pb-free Active PNP Low 0.135 12 30 30 6 0.85 - 200 560 140 1.6 SOT-28
12A, Low VCE(sat), PNP VCE(sat) FL /
Single ECH8 Halide ECH-8
free

ECH8501 Bipolar Transistor, (-)30V, 0.2807 Pb-free Active Comple Low 0.17 5 30 40 6 0.85 - 200 560 280 1.6 SOT-28
(-)30A, Low VCE(sat), mentar VCE(sat) FL /
Complementary Dual Halide y ECH-8
free

ECH8502 Bipolar Transistor, (-)50V, 0.4267 Pb-free Active Comple Low 0.2 5 50 100 6 0.85 - 200 560 290 1.6 SOT-28
(-)30A, Low VCE(sat), mentar VCE(sat) FL /
Complementary Dual Halide y ECH-8
free

EMT SERIES Dual PNP Bipolar 0.0595 Pb-free Active Dual Genera 0.5 0.1 50 60 6 - - 120 560 - 0.357 SOT-
Transistor PNP l 563
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

EMX1 Dual NPN Bipolar 0.0532 Pb-free Active Dual Genera 0.4 0.1 50 60 7 - - 120 560 - 0.357 SOT-
Transistor NPN l 563
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

EMX2DXV6 Dual NPN Bipolar 0.0525 Pb-free Active Dual Genera 0.4 0.1 50 60 7 - - 120 560 - 0.357 SOT-
Transistor NPN l 563
Halide Purpos
free e

FFB2227A NPN & PNP General 0.0719 Pb-free Active NPN Genera 1.4 0.5 30 60 5 1.3 - 30 - 250 0.3 SC-88-
Purpose Amplifier l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6

FFB2907A PNP Multi-Chip General 0.0747 Pb-free Active PNP Genera 1.6 0.6 60 60 5 2.6 - 50 300 250 0.3 SC-88-
Purpose Amplifier l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6

FFB5551 NPN Multi-Chip General 0.088 Pb-free Active Dual Genera 0.2 0.2 160 180 6 1 - 30 250 100 0.2 SC-88-
Purpose Amplifier NPN l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6

FJA13009 NPN Silicon Transistor 0.8 Pb-free Active NPN High 1.5 12 400 700 9 1.6 - 6 30 4 130 TO-3P-
Voltage 3L
Switch
Mode

FJA4210 PNP Epitaxial Silicon 1.1706 Pb-free Active PNP Genera 0.5 10 140 200 6 - - 50 180 30 100 TO-3P-
Transistor l 3L
Purpos
e

FJA4213 PNP Epitaxial Silicon 1.1244 Pb-free Active PNP Genera 3 17 250 250 5 - 1 80; 55 160; 30 130 TO-3P-
Transistor l 110 3L
Purpos
e

FJA4310 NPN Epitaxial Silicon 1.0748 Pb-free Active NPN Genera 0.5 10 140 200 6 - - 70 140 30 100 TO-3P-
Transistor l 3L
Purpos
e

FJA4313 NPN Epitaxial Silicon 0.7434 Pb-free Active NPN Genera 3 17 250 250 5 - 1.5 80 160 30 130 TO-3P-
Transistor l 3L
Purpos
e

FJAF4210 PNP Epitaxial Silicon 1.0666 Pb-free Active PNP Genera 0.5 10 140 200 6 - - 70 140 30 80 TO-
Transistor l 3PF-3L
Purpos
e

FJAF4310 NPN Epitaxial Silicon 0.9093 Pb-free Active NPN Genera 0.5 10 140 200 6 - - 70 140 30 80 TO-
Transistor l 3PF-3L
Purpos
e

FJB102 100V High Voltage Power 0.4188 Pb-free Active NPN High- 2.5 8 100 100 5 - 2.8 200 20000 - 80 D2PAK
Darlington Transistor Voltage -3 / TO-
Halide Power 263-2
free Transis
tor

FJB5555 NPN Silicon Transistor 0.7272 Pb-free Active NPN Silicon 1.5 5 400 1050 14 1.2 - 20 40 - 100 D2PAK
transist -3 / TO-
Halide or 263-2
free

FJD3305H1 NPN Silicon Transistor 0.1901 Pb-free Active NPN Silicon 1 4 400 700 9 1.6 1.2 8 40 4 50 DPAK-
Transis 3 / TO-
tor 252-3

FJD5304D High Voltage Fast 0.1984 Pb-free Active NPN Genera 1 4 400 700 12 1.2 - 8 40 - 30 DPAK-
Switching Transistor l 3 / TO-
Purpos 252-3
e

FJD5553 High Voltage Fast 0.3288 Pb-free Active NPN Silicon 0.5 3 400 1050 14 1.2 - 30 60 - 1.25 DPAK-
Switching Transistor Transis 3 / TO-
tor 252-3

FJD5555 High Voltage Fast 0.4084 Pb-free Active NPN Silicon 1.5 5 400 1050 14 1.2 - 20 40 - 100 DPAK-
Switching Transistor Transis 3 / TO-
tor 252-3

FJE3303 NPN Silicon Transistor 0.176 Pb-free Active NPN High 3 1.5 400 700 9 1.2 - 8; 14 16; 21 4 20 TO-
Planar Silicon Transistor Voltage 126-3
Fast-
Switchi
ng
Power
Transis
tor

FJE5304D NPN Triple Diffused 0.292 Pb-free Active NPN High 1.5 4 400 700 12 1.3 - 8 40 - 30 TO-
Planar Silicon Transistor Voltage 126-3
Fast-
Switchi
ng
Transis
tor
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

FJI5603D NPN Silicon Transistor 0.7112 Pb-free Active NPN Silicon 2.5 3 800 1600 12 1.2 - 20 35 5 100 I2PAK-
Transis 3/
Halide tor D2PAK
free -3
STRAI
GHT
LEAD

FJL4215 PNP Epitaxial Silicon 1.6962 Pb-free Active PNP Genera 3 17 250 250 5 - 1.5 55 160 30 150 TO-
Transistor l 264-3
Purpos
e

FJL4315 NPN Epitaxial Silicon 1.76 Pb-free Active NPN Genera 3 17 250 250 5 - 1.5 55 160 30 150 TO-
Transistor l 264-3
Purpos
e

FJL6920 NPN Triple Diffused 2.9333 Pb-free Active NPN Triple 3 20 800 1700 6 1.5 - 5.5 8.5 - 200 TO-
Planar Silicon Transistor Diffuse 264-3
d
Planar
Silicon
Transis
tor

FJN3303F High Voltage Fast 0.0715 Pb-free Active NPN High 3 1.5 400 700 9 1.2 - 14 23 4 1.1 TO-92-
Switching NPN Power Voltage 3
Transistor Halide Fast-
free Switchi TO-92-
ng 3 LF
Power
Transis
tor

FJP13007 NPN Silicon Transistor 0.2995 Pb-free Active NPN High 3 8 400 700 9 1.6 - 15; 26 28; 39 4 80 TO-
Voltage 220-3
Fast-
Switchi
ng
Power
Transis
tor

FJP13009 High-Voltage Fast- 0.46 Pb-free Active NPN High 3 12 400 700 9 1.6 - 15; 8 40 4 100 TO-
Switching NPN Power Voltage 220-3
Transistor Fast-
Switchi
ng
Power
Transis
tor

FJP1943 PNP Epitaxial Silicon 1.1768 Pb-free Active PNP Genera 3 15 230 230 5 - 1.5 55 160 30 80 TO-
Transistor l 220-3
Purpos
e

FJP3305 NPN Silicon Transistor 0.27 Pb-free Active NPN High 1 4 400 700 9 1.6 - 19; 26 28; 35 4 75 TO-
Voltage 220-3
Fast-
Switchi
ng
Power
Transis
tor

FJP5027 NPN Silicon Transistor 0.44 Pb-free Active NPN High 2 3 800 1100 7 1.5 - 20; 15 40; 30 15 50 TO-
Voltage 220-3
Silicon
Transis
tor

FJP5304D NPN Triple Diffused 0.28 Pb-free Active NPN High 1.5 4 400 700 12 1.3 - 8 40 - 70 TO-
Planar Silicon Transistor Voltage 220-3
High
Speed
Power
Switchi
ng
Transis
tor

FJP5555 NPN Silicon Transistor 0.4 Pb-free Active NPN Silicon 1.5 5 400 1050 14 1.2 - 20 40 - 75 TO-
Transis 220-3
tor

FJPF13007 NPN Silicon Transistor 0.44 Pb-free Active NPN High 3 8 400 700 9 1.6 - 15; 26 28; 39 4 40 TO-
Voltage 220-3
High FullPak
Speed
Power
Switchi
ng
Transis
tor

FJPF13009 NPN Silicon Transistor 0.5823 Pb-free Active NPN Silicon 3 12 400 700 9 1.6 - 8; 15 17; 28 4 50 TO-
Transis 220-3
tor FullPak

FJPF2145 ESBC Rated NPN Power 0.4 Pb-free Active NPN ESBC 2 5 800 1100 7 1.5 - 20 40 15 40 TO-
Transistor Power 220-3
Transis FullPak
tor

FJPF3305 NPN Silicon Transistor 0.36 Pb-free Active NPN High 1 4 400 700 9 1.6 - 19; 26 28; 35 4 30 TO-
Voltage 220-3
Fast- FullPak
Switchi
ng
Power
Transis
tor

FJPF5021 NPN Silicon Transistor 0.4715 Pb-free Active NPN Silicon 1 5 500 800 7 1.5 - 20 40 15 40 TO-
Transis 220-3
tor FullPak
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

FJPF5027 NPN Silicon Transistor 0.5 Pb-free Active NPN High 2 3 800 1100 7 1.5 - 20; 15 40; 30 15 40 TO-
Voltage 220-3
Silicon FullPak
Transis
tor

FJT44 NPN Epitaxial Silicon 0.1367 Pb-free Active NPN Genera 0.75 0.3 400 500 6 0.75 - 50 200 - 2 SOT-
Transistor l 223-4 /
Purpos TO-
e 261-4

FJV1845 NPN Epitaxial Silicon 0.0283 Pb-free Active NPN Genera 0.3 0.05 120 120 5 - 0.65 300 600 50 0.3 SOT-
Transistor l 23-3
Halide Purpos
free e

FJV42MTF NPN High Voltage 0.0515 Pb-free Active NPN High- 0.5 0.5 350 350 6 0.9 - 25 - 50 0.35 SOT-
Transistor Voltage 23-3
Halide Transis
free tor

FJV992 PNP Epitaxial Silicon 0.0288 Pb-free Active PNP Genera 0.3 0.05 120 120 5 - 0.65 300 600 50 0.3 SOT-
Transistor l 23-3
Halide Purpos
free e

FJX992 PNP Audio-Frequency 0.084 Pb-free Active PNP Audio- 0.3 0.1 120 120 5 - 0.65 200 700 100 0.235 SC-70-
Low-Noise Amplifier Freque 3/
Halide ncy SOT-
free Low- 323-3
Noise
Amplifi
er

FMB2222A NPN Multi-Chip General 0.0907 Pb-free Active NPN Genera 1 0.5 45 75 5 2 - 100 300 300 0.7 TSOT-
Purpose Amplifier l 23-6
Halide Purpos
free e

FMB2227A NPN & PNP 0.104 Pb-free Active Comple Genera 1.4 0.5 30 60 5 1.3 - 30 - 250 0.7 TSOT-
Complementary Dual mentar l 23-6
Transistor Halide y Purpos
free e

FMB2907A PNP Multi-Chip General 0.0907 Pb-free Active PNP Genera 1.6 0.6 60 60 5 2.6 - 100 300 250 0.7 TSOT-
Purpose Amplifier l 23-6
Halide Purpos
free e

FMB3904 Dual NPN 40 V, 200 mA 0.0967 Pb-free Active NPN Genera 0.3 0.2 40 60 6 0.95 - 100 300 250 0.7 TSOT-
General Purpose Bipolar l 23-6
Junction Transistor Halide Purpos
free e

FMB3906 PNP Multi-Chip General 0.0967 Pb-free Active PNP Genera 0.4 0.2 40 40 5 0.95 - 100 300 200 0.7 TSOT-
Purpose Amplifier l 23-6
Halide Purpos
free e

FMB3946 NPN & PNP General 0.0987 Pb-free Active Comple Genera 0.25 0.2 40 40 5 0.9 - 100 300 200 0.7 TSOT-
Purpose Amplifier mentar l 23-6
Halide y Purpos
free e

FMB5551 NPN General Purpose 0.114 Pb-free Active NPN Genera 0.2 0.6 160 180 6 1 - 80 250 100 0.7 TSOT-
Amplifier l 23-6
Halide Purpos
free e

FMBA06 NPN Multi-Chip General 0.1639 Pb-free Active NPN Genera 0.25 0.5 80 80 4 - 1.2 100 - 100 0.7 TSOT-
Purpose Amplifier l 23-6
Halide Purpos
free e

FMBM5401 PNP General Purpose 0.1224 Pb-free Active PNP Genera 0.5 0.6 150 160 5 1 1 60 240 100 0.7 TSOT-
Amplifier l 23-6
Halide Purpos
free e

FMBM5551 NPN General Purpose 0.1352 Pb-free Active NPN Genera 0.2 0.6 160 180 6 1 1 80 250 100 0.7 TSOT-
Amplifier l 23-6
Halide Purpos
free e

FMMT549 PNP Low Saturation 0.0828 Pb-free Active PNP Low 0.75 1 30 35 5 1.25 1 100 300 100 0.5 SOT-
Transistor Saturati 23-3
Halide on
free Transis
tor

FSB560 NPN Low Saturation 0.0847 Pb-free Active NPN Low 0.35 2 60 80 5 1.25 1 100 300 75 0.5 SOT-
Transistor Saturati 23-3
Halide on
free Transis
tor

FSB560A NPN Low Saturation 0.1271 Pb-free Active NPN Low 0.3 2 60 80 5 1.25 1 250 550 75 0.5 SOT-
Transistor Saturati 23-3
Halide on
free Transis
tor

FSB649 NPN Low Saturation 0.1255 Pb-free Active NPN Low- 0.6 3 25 35 5 1.25 1 100 300 150 0.5 SOT-
Transistor Saturati 23-3
Halide on
free Transis
tor

FSB660A PNP Low Saturation 0.1255 Pb-free Active PNP Low- 0.3 2 60 60 5 1.25 1 250 550 75 0.5 SOT-
Transistor Saturati 23-3
Halide on
free Transis
tor

FSB749 PNP Low Saturation 0.1151 Pb-free Active PNP Low- 0.6 3 25 35 5 1.25 1 100 300 100 0.5 SOT-
Transistor Saturati 23-3
Halide on
free Transis
tor
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

FZT649 NPN Low Saturation 0.22 Pb-free Active NPN Low- 0.6 3 25 35 5 1.25 1 100 300 150 2 SOT-
Transistor Saturati 223-4 /
on TO-
Transis 261-4
tor

FZT790A PNP Low Saturation 0.1904 Pb-free Active PNP Low- 0.75 3 40 50 5 1 1 300 800 100 2 SOT-
Transistor Saturati 223-4 /
on TO-
Transis 261-4
tor

HN1B01FDW1 NPN PNP Bipolar 0.0289 Pb-free Active Comple Genera 0.3 0.2 50 60 7 - - 200 400 - 0.38 SC-74
Transistor mentar l
Halide y Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

KSA1010 PNP Epitaxial Silicon 0.4739 Pb-free Active PNP High 0.6 7 100 100 7 1.5 - 100 200 - 1.5 TO-
Transistor Speed 220-3
High
Voltage
Switchi
ng

KSA1013 PNP Epitaxial Silicon 0.1024 Pb-free Active PNP Genera 1.5 1 160 160 6 - 0.75 160 320 15 0.9 TO-92-
Transistor l 3
Purpos
e TO-92-
3 LF

KSA1015 PNP Epitaxial Silicon 0.0272 Pb-free Active PNP Genera 0.3 0.15 50 50 5 1.1 - 120 240 80 0.4 TO-92-
Transistor l 3 LF
Purpos
e

KSA1142 PNP Epitaxial Silicon 0.1487 Pb-free Active PNP Genera 0.5 0.1 180 180 5 1.5 - 100 320 180 1.2 TO-
Transistor l 126-3
Purpos
e

KSA1156 PNP Silicon Transistor 0.1715 Pb-free Active PNP High 1 0.5 400 400 7 1.2 - 100 200 - 1 TO-
Voltage 126-3
Switchi
ng Low
Power
Switchi
ng
Regulat
or

KSA1220A PNP Epitaxial Silicon 0.1983 Pb-free Active PNP Genera 0.7 1.2 160 160 5 1.3 - 160 320 175 1.2 TO-
Transistor l 126-3
Purpos
e

KSA1281 PNP Epitaxial Silicon 0.084 Pb-free Active PNP Genera 0.5 2 50 50 5 1.2 - 120 240 100 1 TO-92-
Transistor l 3 LF
Purpos
e

KSA1298 PNP Epitaxial Silicon 0.0291 Pb-free Active PNP Genera 0.4 0.8 25 30 5 - 0.8 100 320 120 0.2 SOT-
Transistor l 23-3
Halide Purpos
free e

KSA1381 PNP Epitaxial Silicon 0.1563 Pb-free Active PNP Genera 0.6 0.1 300 300 5 1 - 100 200 150 1.2 TO-
Transistor l 126-3
Purpos
e

KSA473 PNP Epitaxial Silicon Pb-free Active TO-


Transistor 220-3

KSA708 PNP Epitaxial Silicon 0.0297 Pb-free Active PNP Genera 0.7 0.7 60 80 8 1.1 - 120 240 50 0.8 TO-92-
Transistor l 3 LF
Purpos
e TO-92-
3

KSA916 PNP Epitaxial Silicon 0.0907 Pb-free Active PNP Genera 1 0.8 120 120 5 - - 120 240 120 0.9 TO-92-
Transistor l 3 LF
Purpos
e

KSA928A PNP Epitaxial Silicon 0.0771 Pb-free Active PNP Genera 2 2 30 30 5 - 1 160 320 120 1 TO-92-
Transistor l 3 LF
Purpos
e

KSA940 PNP Epitaxial Silicon 0.2551 Pb-free Active PNP Genera 1.5 1.5 150 150 5 - 0.85 40 140 4 1.5 TO-
Transistor l 220-3
Purpos
e

KSA992 PNP Epitaxial Silicon 0.0221 Pb-free Active PNP Genera 0.3 0.05 120 120 5 - 0.65 300; 470; 50 0.5 TO-92-
Transistor l 430 600 3 LF
Purpos
e TO-92-
3

KSB1015 PNP Epitaxial Silicon 0.2683 Pb-free Active PNP Genera 1 3 60 60 7 - 1 100 200 - 25 TO-
Transistor l 220-3
Purpos FullPak
e

KSB1017 PNP Epitaxial Silicon 0.3892 Pb-free Active PNP Genera 1.7 4 80 80 5 - 1.5 120 240 9 25 TO-
Transistor l 220-3
Purpos FullPak
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

KSB1151 PNP Epitaxial Silicon 0.2 Pb-free Active PNP Genera 0.3 5 60 60 7 1.2 - 160 320 - 1.3 TO-
Transistor l 126-3
Purpos
e

KSB1366 PNP Epitaxial Silicon 0.4379 Pb-free Active PNP Genera 1 3 60 60 7 - 1 150 320 9 2 TO-
Transistor l 220-3
Purpos FullPak
e

KSB546 PNP Epitaxial Silicon 0.2601 Pb-free Active PNP Genera 1 2 150 200 5 - - 120 240 5 2 TO-
Transistor l 220-3
Purpos
e

KSB596 PNP Epitaxial Silicon 0.3047 Pb-free Active PNP Genera 1.7 4 80 80 5 - 1.5 120 240 3 30 TO-
Transistor l 220-3
Purpos
e

KSB772 PNP Epitaxial Silicon 0.1607 Pb-free Active PNP Genera 0.5 3 30 40 5 2 - 160 320 80 1 TO-
Transistor l 126-3
Purpos
e

KSB834W PNP Epitaxial Silicon 0.4019 Pb-free Active PNP Genera 1 3 60 60 7 - 1 100 200 9 1.5 D2PAK
Transistor l -3 / TO-
Halide Purpos 263-2
free e

KSC1008 NPN Epitaxial Silicon 0.0319 Pb-free Active NPN Genera 0.4 0.7 60 80 8 1.1 - 120 240 30 0.8 TO-92-
Transistor l 3 LF
Purpos
e TO-92-
3

KSC1173 NPN Epitaxial Silicon Pb-free Active NPN 0.8 V 3 30 30 5 1 70 240 TO-
Bipolar Junction Transistor 220-3
(BJT)

KSC1815 NPN Epitaxial Silicon 0.0272 Pb-free Active NPN Genera 0.25 0.15 50 60 5 1 - 120 240 80 0.4 TO-92-
Transistor l 3 LF
Purpos
e

KSC2073 NPN Epitaxial Silicon 0.2491 Pb-free Active NPN Genera 1 1.5 150 150 5 - - 60; 40 125; 4 25 TO-
Transistor l 140 220-3
Purpos
e

KSC2328A NPN Epitaxial Silicon 0.0841 Pb-free Active NPN Genera 2 2 30 30 5 - 1 160 320 120 1 TO-92-
Transistor l 3
Purpos
e TO-92-
3 LF

KSC2334 NPN Epitaxial Silicon 0.5236 Pb-free Active NPN Genera 0.6 7 100 150 7 1.5 - 120 240 - 1.5 TO-
Transistor l 220-3
Purpos
e

KSC2383 NPN Epitaxial Silicon 0.1104 Pb-free Active NPN Genera 1.5 1 160 160 6 - 0.75 100; 200; 20 0.9 TO-92-
Transistor l 160 320 3 LF
Purpos
e

KSC2690A NPN Epitaxial Silicon 0.1804 Pb-free Active NPN Genera 0.7 1.2 160 160 5 1.3 - 160 320 155 1.2 TO-
Transistor l 126-3
Purpos
e

KSC2752 NPN Epitaxial Silicon 0.1848 Pb-free Active NPN Genera 1 0.5 400 500 7 2 - 30 60 - 1 TO-
Transistor l 126-3
Purpos
e

KSC3265 NPN Epitaxial Silicon 0.0291 Pb-free Active NPN Genera 0.4 0.8 25 30 5 - 0.8 160 320 120 0.2 SOT-
Transistor l 23-3
Halide Purpos
free e

KSC3296 NPN Epitaxial Silicon 0.3804 Pb-free Active NPN Genera 1.5 1.5 150 150 5 - 0.85 40 140 4 20 TO-
Transistor l 220-3
Purpos FullPak
e

KSC3503 NPN Epitaxial Silicon 0.1559 Pb-free Active NPN Genera 0.6 0.1 300 300 5 1 - 60 120 150 7 TO-
Transistor l 126-3
Purpos
e

KSC5026M NPN Silicon Transistor 0.3352 Pb-free Active NPN Genera 2 1.5 800 1100 7 1.5 - 20 40 15 20 TO-
l 126-3
Purpos
e

KSC5027 NPN Silicon Transistor 0.5116 Pb-free Active NPN Genera 2 3 800 1100 7 1.5 - 20 40 15 50 TO-
l 220-3
Purpos
e

KSC5338D NPN Triple Diffused 0.3845 Pb-free Active NPN Genera 1.5 5 450 1000 12 1 - 15 25 11 75 TO-
Planar Silicon Transistor l 220-3
Purpos
e

KSC5402D NPN Silicon Transistor 0.352 Pb-free Active NPN Genera 0.75 2 450 1000 12 1.1 - 14 29 11 30 DPAK-
Planar Silicon Transistor l 3 / TO-
Purpos 252-3
e

KSC5502 NPN Planar Silicon 0.5912 Pb-free Active NPN Genera 1.5 2 600 1200 12 1.2 - 12 30 - 50 TO-
Transistor l 220-3
Purpos
e

KSC5502D NPN Triple Diffused 0.3045 Pb-free Active NPN Genera 1.5 2 600 1200 12 1.2 - 12 30 11 87.83 DPAK-
Planar Silicon Transistor l 3 / TO-
Purpos 252-3
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

KSC5502DT NPN Triple Diffused 0.4528 Pb-free Active NPN Genera 1.5 2 600 1200 12 1.2 - 12 30 11 118.16 TO-
Planar Silicon Transistor l 220-3
Purpos
e

KSC5603D NPN Silicon Transistor 0.6607 Pb-free Active NPN Genera 2.5 3 800 1600 12 1.2 - 20 35 5 100 TO-
Planar Silicon Transistor l 220-3
Purpos
e

KSC945 NPN Epitaxial Silicon 0.0199 Pb-free Active NPN Genera 0.3 0.15 50 60 5 - - 120 240 300 0.25 TO-92-
Transistor l 3 LF
Purpos
e TO-92-
3

KSD1408 NPN Epitaxial Silicon 0.4948 Pb-free Active NPN Genera 1.5 4 80 80 5 - 1.5 120 240 8 25 TO-
Transistor l 220-3
Purpos FullPak
e

KSD1588 NPN Epitaxial Silicon 0.3633 Pb-free Active NPN Genera 0.5 7 60 100 7 1.5 - 100 200 - 30 TO-
Transistor l 220-3
Purpos FullPak
e

KSD1616A NPN Epitaxial Silicon 0.0604 Pb-free Active NPN Genera 0.3 1 60 120 6 1.2 0.7 200; 400; 100 0.75 TO-92-
Transistor l 135 270 3
Purpos
e TO-92-
3 LF

KSD1691 NPN Epitaxial Silicon 0.2312 Pb-free Active NPN Genera 0.3 5 60 60 7 1.2 - 200; 400; - 20 TO-
Transistor l 160 320 126-3
Purpos
e

KSD1692 NPN Silicon Darlington 0.2975 Pb-free Active NPN Genera 1.2 3 100 150 8 2 - 4000 12000 - 15 TO-
Transistor l 126-3
Purpos
e

KSD2012 NPN Epitaxial Silicon 0.32 Pb-free Active NPN Genera 1 3 60 60 7 - 1 150 320 3 25 TO-
Transistor l 220-3
Purpos FullPak
e

KSD363 NPN Epitaxial Silicon 0.4127 Pb-free Active NPN Genera 1 6 120 300 8 1.5 - 40; 120 80; 240 10 40 TO-
Transistor l 220-3
Purpos
e

KSD471A NPN Epitaxial Silicon 0.052 Pb-free Active NPN Genera 0.5 1 30 40 5 1.2 - 120 240 130 0.8 TO-92-
Transistor l 3
Purpos
e TO-92-
3 LF

KSD5041 NPN Epitaxial Silicon 0.0836 Pb-free Active NPN Genera 1 5 20 40 7 - - 340 600 150 0.75 TO-92-
Transistor l 3 LF
Purpos
e

KSD526 NPN Epitaxial Silicon 0.2404 Pb-free Active NPN Genera 1.5 4 80 80 5 - 1.5 120 240 3 30 TO-
Transistor l 220-3
Purpos
e

KSD794A NPN Epitaxial Silicon 0.1449 Pb-free Active NPN Genera 2 3 60 70 5 2 - 160 320 60 10 TO-
Transistor l 126-3
Purpos
e

KSD880 NPN Epitaxial Silicon 0.3256 Pb-free Active NPN Genera 1 3 60 60 7 - 1 60; 100 120; 3 30 TO-
Transistor l 200 220-3
Purpos
e

KSD882 NPN Epitaxial Silicon 0.1156 Pb-free Active NPN Genera 0.5 3 30 40 5 2 - 160 320 90 10 TO-
Transistor l 126-3
Purpos
e

KSE13003 NPN Silicon Transistor 0.198 Pb-free Active NPN Genera 3 1.5 400 700 9 1.2 - 9; 14 16; 21 4 20 TO-
l 126-3
Purpos
e

KSE13003T NPN Silicon Transistor 0.3884 Pb-free Active NPN Genera 3 1.5 400 700 9 1.2 - 8 40 4 30 TO-
l 220-3
Purpos
e

KSE44H NPN Epitaxial Silicon 0.396 Pb-free Active NPN Genera 1 10 80 - 5 1.5 - 60 - 50 50 TO-
Transistor l 220-3
Purpos
e

KSE45H PNP Epitaxial Silicon 0.3631 Pb-free Active PNP Genera 1 10 80 - 5 1.5 - 60 - 40 50 TO-
Transistor l 220-3
Purpos
e

KSE800 NPN Epitaxial Silicon 0.302 Pb-free Active NPN Genera 3 4 60 60 5 - 3 750 - - 40 TO-
Darlington Transistor l 126-3
Purpos
e

KSP2222A NPN Epitaxial Silicon 0.0248 Pb-free Active NPN Genera 1 0.6 40 75 6 2 - 100 300 300 0.625 TO-92-
Transistor l 3
Purpos
e TO-92-
3 LF

KSP2907A PNP Epitaxial Silicon 0.0275 Pb-free Active PNP Genera 1.6 0.6 60 60 5 2.6 - 100 300 200 0.625 TO-92-
Transistor l 3
Purpos
e TO-92-
3 LF
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

KSP42 NPN Epitaxial Silicon 0.034 Pb-free Active NPN Genera 0.5 0.5 300 300 6 0.9 - 40 - 50 0.625 TO-92-
Transistor l 3
Purpos
e TO-92-
3 LF

KSP43 NPN Epitaxial Silicon 0.0261 Pb-free Active NPN Genera 0.5 0.5 200 200 6 0.9 - 40 - 50 0.625 TO-92-
Transistor l 3
Purpos
e TO-92-
3 LF

KSP44 NPN Epitaxial Silicon 0.0732 Pb-free Active NPN Genera 0.75 0.3 400 500 6 0.75 - 50 200 - 0.625 TO-92-
Transistor l 3
Purpos
e TO-92-
3 LF

KSP55 PNP Epitaxial Silicon 0.0388 Pb-free Active PNP Genera 0.25 0.5 60 60 4 - 1.2 50 - 105 0.625 TO-92-
Transistor l 3 LF
Purpos
e

KSP92 PNP Epitaxial Silicon 0.0313 Pb-free Active PNP Genera 0.5 0.5 300 300 5 0.9 - 40 - 50 0.625 TO-92-
Transistor l 3
Purpos
e TO-92-
3 LF

MBT2222ADW1 NPN Bipolar Transistor 0.0317 Pb-free Active Dual Genera 1 0.6 40 75 6 2 - 100 300 300 0.15 SC-88-
T1 NPN l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

MBT35200 High Current PNP Bipolar 0.1333 Pb-free Active PNP Genera 0.2 2 35 55 5 0.68 0.81 100 400 100 0.625 TSOP-
Transistor for Load l 6
Management in Portable Halide Purpos
Applications free e

AEC
Qualifie
d

PPAP
Capabl
e

MBT3904DW1 Dual NPN Bipolar 0.0317 Pb-free Active Dual Genera 0.3 0.2 40 60 6 0.65 - 100 300 300 0.15 SC-88-
Transistor NPN l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

MBT3906DW1 Dual PNP Bipolar 0.0317 Pb-free Active Dual Genera 0.4 0.2 40 40 5 0.65 - 100 300 250 0.15 SC-88-
Transistor PNP l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

MBT3946DW1T1 NPN PNP Bipolar 0.0317 Pb-free Active Comple Genera 0.3- 0.2 40 60 6 0.65 - 100 300 250 0.15 SC-88-
Transistor mentar l NPN 6 / SC-
Halide y Purpos 0.4- 70-6 /
free e PNP SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

MBT6429DW1 NPN Bipolar Small Signal Pb-free Active Dual Genera 0.6 0.2 45 55 6 - 0.56 500 1250 100 0.15 SC-88-
Transistor NPN l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6

MCH3105 Bipolar Transistor, (-)50V, 0.1023 Pb-free Active PNP Low 0.2 3 50 80 6 0.88 - 200 560 360 0.8 SC-
(-)3A, Low VCE(sat), VCE(sat) 70FL /
(PNP)NPN Single MCPH3 MCPH-
3

MCH3109 Bipolar Transistor, (-)30V, 0.1064 Pb-free Active PNP Low 0.23 3 30 40 5 0.83 - 200 560 380 0.8 SC-
(-)3A, Low VCE(sat), VCE(sat) 70FL /
(PNP)NPN Single MCPH3 MCPH-
3

MCH3145 Bipolar Transistor, (-)50V, 0.0924 Pb-free Active PNP Low 0.33 2 50 80 6 0.9 - 200 560 420 0.8 SC-
(-)2A, Low VCE(sat), VCE(sat) 70FL /
(PNP)NPN Single MCPH3 MCPH-
3

MCH3205 Bipolar Transistor, (-)50V, 0.1135 Pb-free Active NPN Low 0.12 3 50 80 6 0.88 - 200 560 380 0.8 SC-
(-)3A, Low VCE(sat), VCE(sat) 70FL /
(PNP)NPN Single MCPH3 MCPH-
3
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MCH3209 Bipolar Transistor, (-)30V, 0.1437 Pb-free Active NPN Low 0.18 3 30 40 5 0.83 - 200 560 450 0.8 SC-
(-)3A, Low VCE(sat), VCE(sat) 70FL /
(PNP)NPN Single MCPH3 MCPH-
3

MCH3245 Bipolar Transistor, (-)50V, 0.104 Pb-free Active NPN Low 0.26 2 50 80 6 0.9 - 200 560 420 0.8 SC-
(-)2A, Low VCE(sat), VCE(sat) 70FL /
(PNP)NPN Single MCPH3 MCPH-
3

MCH6101 Bipolar Transistor, -15V, - 0.0753 Pb-free Active PNP Low 0.18 1.5 15 15 5 0.85 - 200 560 430 1 SC-
1.5A, Low VCE(sat), PNP VCE(sat) 88FL /
Single MCPH6 MCPH-
6

MCH6102 Bipolar Transistor, (-)30V, 0.108 Pb-free Active PNP Low 0.375 1.5 15 40 5 0.85 - 200 560 450 1 SC-
(-)1.5A, Low VCE(sat), VCE(sat) 88FL /
(PNP)NPN Single MCPH6 MCPH-
6

MCH6103 Bipolar Transistor, (-)50V, 0.084 Pb-free Active PNP Low 0.43 1 50 80 5 0.81 - 200 560 420 1 SC-
(-)1A, Low VCE(sat), VCE(sat) 88FL /
(PNP)NPN Single MCPH6 MCPH-
6

MCH6202 Bipolar Transistor, (-)30V, 0.1333 Pb-free Active NPN Low 0.225 1.5 30 40 5 0.85 - 200 560 500 1 SC-
(-)1.5A, Low VCE(sat), VCE(sat) 88FL /
(PNP)NPN Single MCPH6 MCPH-
6

MCH6203 Bipolar Transistor, (-)50V, 0.104 Pb-free Active NPN Low 0.19 1 50 80 5 0.81 - 200 560 420 1 SC-
(-)1A, Low VCE(sat), VCE(sat) 88FL /
(PNP)NPN Single MCPH6 MCPH-
6

MCH6534 Bipolar Transistor, 15V, 0.116 Pb-free Active Dual Low 0.3 0.7 15 20 5 0.9 - 300 800 330 0.55 SC-
0.7A, Low VCE(sat) NPN NPN VCE(sat) 88FL /
Dual MCPH6 MCPH-
6

MCH6541 Bipolar Transistor, (-)30V, 0.1317 Pb-free Active Comple Low 0.19 0.7 30 40 5 0.9 - 300 800 540 0.55 SC-
(-)3A, Low VCE(sat) mentar VCE(sat) 88FL /
Complementary Dual y MCPH-
MCPH6 6

MCH6544 Bipolar Transistor, 50V, 0.1331 Pb-free Active Dual Low 0.1 0.5 50 60 5 0.9 - 300 800 500 0.55 SC-
0.5A, Low VCE(sat) NPN NPN VCE(sat) 88FL /
Dual MCPH6 MCPH-
6

MCH6545 Bipolar Transistor, (-)50V, 0.1331 Pb-free Active Comple Low 0.1 0.5 50 60 5 0.9 - 300 700 500 0.55 SC-
(-)1A, Low VCE(sat) mentar VCE(sat) 88FL /
Complementary Dual y MCPH-
MCPH6 6

MJ14002 60 A, 80 V NPN Bipolar 9.5018 Pb-free Active NPN Genera 3 60 80 80 5 4 - 15 100 - 300 TO-
Power Transistor l 204-2 /
Purpos TO-3-2
e

MJ2955 15 A, 60 V PNP Bipolar 3.0789 Pb-free Active PNP Genera 3 15 60 100 7 - 1.5 20 70 2.5 115 TO-
Power Transistor l 204-2
Purpos
e

MJ4502 30 A, 100 V PNP Bipolar 3.6491 Pb-free Active PNP Genera 0.8 30 90 100 4 1.3 1.3 25 100 2 200 TO-
Power Transistor l 204-2
Purpos
e

MJ802 30 A, 90 V NPN Bipolar 3.7071 Pb-free Active NPN Genera 0.8 30 90 100 4 1.3 1.3 25 100 2 200 TO-
Power Transistor l 204-2
Purpos
e

MJB41C 6.0 A, 100 V NPN Bipolar 0.44 Pb-free Active NPN Genera 1.5 6 100 100 5 - 2 15 75 3 65 D2PAK
Power Transistor l -3 / TO-
Halide Purpos 263-2
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJB42C 6.0 A, 100 V PNP Bipolar 0.4717 Pb-free Active PNP Genera 1.5 6 100 100 5 - 2 15 75 3 65 D2PAK
Power Transistor l -3 / TO-
Halide Purpos 263-2
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJB44H11 Bipolar Power Transistor, 0.4699 Pb-free Active NPN Genera 1 10 80 - 5 1.5 - 60 - - 50 D2PAK
NPN, 10 A, 80 V, 50 Watt l -3 / TO-
Halide Purpos 263-2
free e

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MJB45H11 Bipolar Transistor, PNP, 0.4755 Pb-free Active PNP Genera 1 10 80 - 5 1.5 - 60 - - 50 D2PAK
80 V, 10 A l -3 / TO-
Halide Purpos 263-2
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD148 4 A, 45 V NPN Bipolar 0.2464 Pb-free Active NPN Genera 0.5 4 45 45 5 - 1.1 85 375 3 20 DPAK-
Power Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD200 5 A, 25 V NPN Bipolar 0.1736 Pb-free Active NPN Genera 1.8 5 25 40 8 2.5 1.6 45 180 65 12.5 DPAK-
Power Transistor l 3
Halide Purpos
free e

MJD210 5.0 A, 25 V PNP Bipolar 0.1697 Pb-free Active PNP Genera 1.8 5 25 40 8 2.5 1.6 45 180 3 12.5 DPAK-
Power Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD243 4.0 A, 100 V NPN Bipolar 0.2533 Pb-free Active NPN Genera 0.6 4 100 100 7 1.8 1.5 40 180 40 12.5 DPAK-
Power Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD253 4.0 A, 100 V PNP Bipolar 0.2533 Pb-free Active PNP Genera 0.6 4 100 100 7 1.8 1.5 40 180 40 12.5 DPAK
Power Transistor l INSER
Halide Purpos TION
free e MOUN
T
AEC
Qualifie DPAK-
d 3

PPAP
Capabl
e

MJD2955 10 A, 60 V PNP Bipolar 0.1851 Pb-free Active PNP Genera 0.8 10 60 70 5 - 1.8 20 100 2 20 DPAK-
Power Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD3055 10 A, 60 V NPN Bipolar 0.2556 Pb-free Active NPN Genera 8 10 60 70 5 - 1.8 20 100 2 20 DPAK-
Power Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD31 3.0 A, 40 V NPN Bipolar 0.1597 Pb-free Active NPN Genera 1.2 3 40 40 5 - 1.8 10 50 3 15 DPAK-
Power Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MJD31C 3.0 A, 100 V NPN Bipolar 0.1337 Pb-free Active NPN Genera 1.2 3 100 100 5 - 1.8 10 50 3 15 DPAK
Power Transistor l INSER
Halide Purpos TION
free e MOUN
T
AEC
Qualifie DPAK-
d 3

PPAP
Capabl
e

MJD32 3 A, 40 V PNP Bipolar 0.1743 Pb-free Active PNP Genera 1.2 3 40 40 5 - 1.8 10 50 3 15 DPAK-
Power Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD32C 3.0 A, 100 V PNP Bipolar 0.1421 Pb-free Active PNP Genera 1.2 3 100 100 5 - 1.8 10 50 3 15 DPAK-
Power Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD340 0.5 A, 300 V High Voltage 0.166 Pb-free Active NPN Genera 1 0.5 300 300 3 - 1.5 30 240 - 15 DPAK-
NPN Bipolar Power l 3
Transistor Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD350 0.5 A, 300 V High Voltage 0.1611 Pb-free Active PNP Genera 1 0.5 300 300 3 - 1.5 30 240 - 15 DPAK-
PNP Bipolar Power l 3
Transistor Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD41C 6.0 A, 100 V NPN Bipolar 0.2401 Pb-free Active NPN Genera 1.5 6 100 100 5 - 2 15 75 3 20 DPAK-
Power Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD42C 6.0 A, 100 V PNP Bipolar 0.2184 Pb-free Active PNP Genera 1.5 6 100 100 5 - 2 15 75 3 20 DPAK
Power Transistor l INSER
Halide Purpos TION
free e MOUN
T
AEC
Qualifie DPAK-
d 3

PPAP
Capabl
e

MJD44H11 8 A, 80 V NPN Bipolar 0.2132 Pb-free Active NPN Genera 1 8 80 - 5 1.5 - 60 - - 20 DPAK
Power Transistor l INSER
Halide Purpos TION
free e MOUN
T
AEC
Qualifie DPAK-
d 3

PPAP
Capabl
e

MJD45H11 8 A, 80 V PNP Power 0.22 Pb-free Active PNP Genera 1 8 80 - 5 1.5 - 60 - - 20 DPAK
Bipolar Junction Transistor l INSER
Halide Purpos TION
free e MOUN
T
AEC
Qualifie DPAK-
d 3

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MJD47 1.0 A, 250 V High Voltage 0.1837 Pb-free Active NPN Genera 1 1 250 350 5 - 1.5 30 150 10 15 DPAK-
NPN Bipolar Power l 3
Transistor Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD50 1.0 A, 400 V High Voltage 0.1933 Pb-free Active NPN Genera 1 1 400 500 5 - 1.5 30 150 10 15 DPAK-
NPN Bipolar Power l 3
Transistor Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MJD5731 1.0 A, 350 V High Voltage 0.2217 Pb-free Active PNP Genera 1 1 350 - 5 - 1.5 30 175 10 15 DPAK-
PNP Bipolar Power l 3
Transistor Halide Purpos
free e

MJE13007 8.0 A, 400 V NPN Bipolar 0.48 Pb-free Active NPN Genera 1 8 400 - 9 1.6 - 5 30 4 80 TO-
Power Transistor l 220-3
Purpos
e

MJE15033 Bipolar Transistor, PNP, 0.608 Pb-free Active PNP Genera 0.5 8 250 250 5 - 1 50 - 30 50 TO-
250 V, 8.0 A l 220-3
Purpos
e

MJE171 3.0 A PNP Bipolar Power 0.1728 Pb-free Active PNP Genera 1.7 3 40; 60 60; 80 7 2 1.2 50 250 50 12.5 TO-
Transistor l 225-3
Halide Purpos
free e

MJE172 3.0 A, 80 V PNP Bipolar 0.18 Pb-free Active PNP Genera 1.7 3 80 100 7 2 1.2 50 250 50 12.5 TO-
Power Transistor l 225-3
Halide Purpos
free e

MJE180 NPN Epitaxial Silicon 0.1367 Pb-free Active NPN Genera 1.7 3 40 60 7 2 1.2 50 250 50 12.5 TO-
Transistor l 126-3
Purpos
e

MJE18004 5.0 A, 1000 V NPN Bipolar 0.3435 Pb-free Active NPN Genera 0.75 5 450 1000 9 0.92 - 14 34 - 75 TO-
Power Transistor l 220-3
Purpos
e

MJE18008 8.0 A, 450 V NPN Bipolar 0.6133 Pb-free Active NPN Genera 0.6 8 450 1000 9 0.92 - 14 34 13 125 TO-
Power Transistor l 220-3
Purpos
e

MJE181 3.0 A, 60 V NPN Bipolar 0.1367 Pb-free Active NPN Genera 1.7 3 60 80 7 2 1.2 50 250 50 12.5 TO-
Power Transistor l 225-3
Halide Purpos
free e TO-
126-3

MJE182 3.0 A NPN Bipolar Power 0.1577 Pb-free Active NPN Genera 1.7 3 40; 80 60; 100 7 2 1.2 50 250 50 12.5 TO-
Transistor l 225-3
Halide Purpos
free e

MJE200 5.0 A, 25 V NPN Bipolar 0.1867 Pb-free Active NPN Genera 1.8 5 40 - 8 2.5 1.6 45 180 65 15 TO-
Power Transistor l 225-3
Halide Purpos
free e

MJE210 5.0 A, 25 V PNP Bipolar 0.1867 Pb-free Active PNP Genera 1.8 5 40 - 8 2.5 1.6 45 180 65 15 TO-
Power Transistor l 225-3
Halide Purpos
free e

MJE243 4.0 A, 100 V NPN Bipolar 0.2 Pb-free Active NPN Genera 0.6 4 100 100 7 1.8 1.5 40 180 40 15 TO-
Power Transistor l 225-3
Halide Purpos
free e

MJE253 4.0 A, 100 V PNP Bipolar 0.2 Pb-free Active PNP Genera 0.6 4 100 100 7 1.8 1.5 40 180 40 15 TO-
Power Transistor l 225-3
Halide Purpos
free e

MJE2955T Bipolar Power Transistor, 0.3283 Pb-free Active PNP Genera 8 10 60 70 5 - 1.8 20 100 2 125 TO-
PNP, 10 A, 60 V, 75 Watt l 220-3
Purpos
e

MJE3055T Bipolar Power Transistor, 0.3733 Pb-free Active NPN Genera 8 10 60 70 5 1.1 1.8 20 100 2 125 TO-
NPN, 10 A, 60 V, 75 Watt l 220-3
Purpos
e

MJE340 Medium Power NPN 0.19 Pb-free Active NPN Genera - 0.5 300 - 3 - - 30 240 - 20 TO-
Bipolar Power Transistor l 225-3
Halide Purpos
free e

MJE3439 NPN Bipolar Power 0.1872 Pb-free Active NPN Genera 0.5 0.3 350 450 5 1.3 0.8 15 200 15 15 TO-
Transistor l 225-3
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MJE344 0.5 A, 200 V NPN Bipolar 0.1872 Pb-free Active NPN Genera 1 0.5 200 200 5 - 1 30 300 15 20 TO-
Power Transistor l 225-3
Halide Purpos
free e

MJE350 0.5 A, 300 V PNP Bipolar 0.19 Pb-free Active PNP Genera - 0.5 300 - 3 - - 30 240 - 20 TO-
Power Transistor l 225-3
Halide Purpos
free e

MJE371 4.0 A, 40 V PNP Bipolar 0.2016 Pb-free Active PNP Genera - 4 40 40 4 - - 40 - - 40 TO-
Power Transistor l 225-3
Halide Purpos
free e

MJE4343 16 A, 160 V NPN Bipolar 1.7214 Pb-free Active NPN Genera 3.5 16 160 160 7 3.9 3.9 15 - 1 125 TO-247
Power Transistor l
Purpos
e

MJE5730 1.0 A, 300 V PNP Bipolar 0.4924 Pb-free Active PNP Genera 1 1 300 300 5 - 1.5 30 150 10 40 TO-
Power Transistor l 220-3
Purpos
e

MJE5731 1.0 A, 350 V PNP Bipolar 0.5 Pb-free Active PNP Genera 1 1 350 350 5 - 1.5 30 150 10 40 TO-
Power Transistor l 220-3
Purpos
e

MJE5731A PNP Bipolar Power 0.5 Pb-free Active PNP Genera 1 1 375 30 150 10 40 TO-
Transistor l 220-3
Purpos
e

MJE5850 8.0 A, 300 V PNP Bipolar 1.3133 Pb-free Active PNP Genera 2 8 300 - 6 1.5 - 15 - - 80 TO-
Power Transistor l 220-3
Purpos
e

MJE5851 8.0 A, 350 V PNP Bipolar 1.3129 Pb-free Active PNP Genera 2 8 350 - 6 1.5 - 15 - - 80 TO-
Power Transistor l 220-3
Purpos
e

MJE5852 8.0 A, 400 V PNP Bipolar 1.3133 Pb-free Active PNP Genera 2 8 400 - 6 1.5 - 15 - - 80 TO-
Power Transistor l 220-3
Purpos
e

MJF15030 8.0 A, 150 V NPN Bipolar 0.7333 Pb-free Active NPN Genera 0.5 8 150 150 5 - 1 40 - 30 36 TO-
Power Transistor l 220-3
Purpos FullPak
e

MJF15031 8.0 A, 150 V PNP Bipolar 0.7905 Pb-free Active PNP Genera 0.5 8 150 150 5 - 1 40 - 30 36 TO-
Power Transistor l 220-3
Purpos FullPak
e

MJF18004 5.0 A, 450 V NPN Bipolar 0.6885 Pb-free Active NPN Genera 0.75 5 450 1000 9 1.25 - 14 34 - 35 TO-
Power Transistor l 220-3
Purpos FullPak
e

MJF18008 8.0 A, 450 V NPN Bipolar 1.1396 Pb-free Active NPN Genera 0.6 8 450 1000 9 1.25 - 14 34 - 45 TO-
Power Transistor l 220-3
Purpos FullPak
e

MJF2955 PNP Bipolar Power 0.6072 Pb-free Active PNP Genera 2.5 10 90 - 5 - 1.5 20 100 2 30 TO-
Transistor l 220-3
Purpos FullPak
e

MJF3055 NPN Bipolar Power 0.72 Pb-free Active NPN Genera 2.5 10 90 - 5 - 1.5 20 100 2 30 TO-
Transistor l 220-3
Purpos FullPak
e

MJF31C NPN Bipolar Power 0.4667 Pb-free Active NPN Genera 1.2 3 100 100 5 - 1.8 10 50 3 30 TO-
Transistor l 220-3
Purpos FullPak
e

MJF32C PNP Bipolar Power 0.3764 Pb-free Active PNP Genera 1.2 3 100 100 5 - 1.8 10 50 3 30 TO-
Transistor l 220-3
Purpos FullPak
e

MJF44H11 NPN Bipolar Power 0.72 Pb-free Active NPN Genera 1 10 80 - 5 1.5 - 60 - - 50 TO-
Transistor l 220-3
Purpos FullPak
e

MJF45H11 PNP Bipolar Power 0.7333 Pb-free Active PNP Genera 1 10 80 - 5 1.5 - 60 - - 50 TO-
Transistor l 220-3
Purpos FullPak
e

MJF47 High Voltage NPN Bipolar 0.5551 Pb-free Active NPN Genera 1 1 250 350 5 - 1.5 30 150 10 28 TO-
Power Transistor l 220-3
Purpos FullPak
e

MJW18020 High Voltage, Planar NPN 3.7999 Pb-free Active NPN Genera 1.5 30 450 1000 9 1.5 - 14 34 - 250 TO-
Bipolar Power Transistor l 247-3
Purpos
e

MMBT100 NPN General Purpose 0.032 Pb-free Active NPN Genera 0.4 0.5 45 75 6 1 - 100 450 250 0.35 SOT-
Amplifier l 23-3
Halide Purpos
free e

MMBT2131 PNP Bipolar Transistor 0.1333 Pb-free Active PNP Genera 0.25 0.7 30 40 5 1.1 1 150 - - 0.342 SC-74
l
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MMBT2222AL NPN Bipolar Transistor 0.0123 Pb-free Active NPN Genera 1 0.6 40 75 6 2 - 100 300 300 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT2222AM3 NPN Bipolar Transistor 0.026 Pb-free Active NPN Genera 1 0.6 40 75 6 2 - 100 300 300 0.64 SOT-
l 723-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT2222AT NPN Bipolar Junction 0.0233 Pb-free Active NPN Genera 1 0.6 40 75 6 2 - 100 - 300 0.15 SC-75-
Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT2222AW NPN Bipolar Transistor 0.0207 Pb-free Active NPN Genera 1 0.6 40 75 6 2 - 100 300 300 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MMBT2222L NPN Bipolar Transistor 0.0193 Pb-free Active NPN Genera 1.6 0.6 30 60 5 2.6 - 100 300 250 0.225 SOT-
l 23-3
Halide Purpos
free e

MMBT2369AL NPN Bipolar Transistor 0.0271 Pb-free Active NPN Genera 0.5 0.2 15 40 4.5 1.6 - 40 120 - 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT2369L NPN Bipolar Transistor 0.0244 Pb-free Active NPN Genera 0.5 0.2 15 40 4.5 1.6 - 40 120 - 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT2484L NPN Bipolar Transistor 0.0271 Pb-free Active NPN Genera 0.35 0.1 60 60 6 - 0.95 250 800 - 0.225 SOT-
l 23-3
Halide Purpos
free e

MMBT2907AL PNP Bipolar Transistor 0.0147 Pb-free Active PNP Genera 1.6 0.6 60 60 5 2.6 - 100 300 200 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT2907AM3 PNP Bipolar Transistor 0.0333 Pb-free Active PNP Genera 1.6 0.6 60 60 5 2.6 - 100 300 200 0.64 SOT-
l 723-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MMBT2907AW PNP Bipolar Transistor 0.0213 Pb-free Active PNP Genera 1.6 0.6 60 60 5 2.6 - 100 - 200 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MMBT3416L NPN Bipolar Transistor 0.0127 Pb-free Active NPN Genera 0.3 0.1 40 - 4 1.3 - 75 225 - 0.225 SOT-
l 23-3
Halide Purpos
free e

MMBT3904L NPN Bipolar Transistor 0.0116 Pb-free Active NPN Genera 0.3 0.2 40 60 6 0.95 - 100 300 300 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT3904T NPN Bipolar Transistor 0.0233 Pb-free Active NPN Genera 0.3 0.2 40 60 6 0.95 - 100 300 300 0.2 SC-75-
l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT3904W NPN Bipolar Transistor 0.0147 Pb-free Active NPN Genera 0.3 0.2 40 60 6 0.95 - 100 300 300 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MMBT3906L PNP Bipolar Transistor 0.0116 Pb-free Active PNP Genera 0.4 0.2 40 40 5 0.95 - 100 300 250 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT3906T PNP Bipolar Transistor 0.0233 Pb-free Active PNP Genera 0.4 0.2 40 40 5 0.95 - 100 300 250 0.2 SC-75-
l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT3906W General Purpose Bipolar 0.0112 Pb-free Active PNP Genera 0.4 0.2 40 40 5 0.95 - 100 300 250 0.15 SC-70-
Transistor l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MMBT4124 20 V NPN Bipolar 0.0167 Pb-free Active NPN Genera 0.3 0.2 25 30 5 0.95 - 120 360 300 0.225 SOT-
Transistor l 23-3
Halide Purpos
free e

MMBT4126LT1 PNP Bipolar Transistor 0.0116 Pb-free Active PNP Genera 0.4 0.2 25 25 4 0.95 - 120 300 250 0.225 SOT-
l 23-3
Halide Purpos
free e

MMBT4401L NPN Bipolar Transistor 0.0137 Pb-free Active NPN Genera 0.75 0.6 40 60 6 1.2 - 100 300 250 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MMBT4401M3 NPN Bipolar Transistor 0.0267 Pb-free Active NPN Genera 0.75 0.6 40 60 6 1.2 - 100 300 250 0.64 SOT-
l 723-3
Halide Purpos
free e

MMBT4401WT1 NPN Bipolar Transistor 0.0213 Pb-free Active NPN Genera 0.75 0.6 40 60 6 1.2 - 100 300 250 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MMBT4403L PNP Bipolar Transistor 0.012 Pb-free Active PNP Genera 0.75 0.6 40 40 5 1.3 - 100 300 200 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT4403M3 PNP Bipolar Transistor 0.0267 Pb-free Active PNP Genera 0.75 0.6 40 40 5 1.3 - 100 300 200 0.64 SOT-
l 723-3
Halide Purpos
free e

MMBT4403W PNP Bipolar Transistor 0.0213 Pb-free Active PNP Genera 0.75 0.6 40 40 5 1.3 - 100 300 200 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

MMBT489 High Current NPN Bipolar 0.096 Pb-free Active NPN Genera 0.2 1 30 50 5 1.1 1.1 300 900 100 0.31 SOT-
Transistor l 23-3
Halide Purpos
free e

MMBT5087L PNP Bipolar Transistor 0.0271 Pb-free Active PNP Genera 0.3 0.05 50 50 3 0.85 - 250 800 40 0.25 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT5088L NPN Bipolar Transistor 0.0263 Pb-free Active NPN Genera 0.5 0.05 30 35 4.5 0.8 - 300 900 50 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT5089L NPN Bipolar Transistor 0.026 Pb-free Active NPN Genera 0.5 0.05 25 30 4.5 0.8 - 400 1200 50 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT5401L High Voltage PNP Bipolar 0.0223 Pb-free Active PNP Genera 0.5 0.5 150 160 5 1 - 60 240 100 0.225 SOT-
Transistor l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT5401M3 150 V, 60 mA, Low VCE(sat) 0.0336 Pb-free Active PNP Genera 0.6 0.06 150 160 5 1 - 60 240 100 0.25 SOT-
PNP Transistor in SOT- l 723-3
723 Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MMBT5401W High Voltage PNP Bipolar 0.0337 Pb-free Active PNP Genera 0.5 0.5 150 160 5 1 - 60 240 100 0.2 SC-70-
Transistor l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MMBT5550L High Voltage NPN Bipolar 0.0263 Pb-free Active NPN Genera 0.25 0.6 140 160 6 1.2 - 60 250 - 0.225 SOT-
Transistor l 23-3
Halide Purpos
free e

MMBT5551L High Voltage NPN Bipolar 0.0216 Pb-free Active NPN Genera 0.2 0.6 160 180 6 1 - 80 250 - 0.225 SOT-
Transistor l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT5551M3 High Voltage NPN Bipolar 0.0252 Pb-free Active NPN Genera 0.2 0.06 160 180 6 1 - 80 250 - 0.64 SOT-
Transistor l 723-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT589L 30 V, 1.0 A High Current 0.096 Pb-free Active PNP Genera 0.3 1 30 50 5 1.2 1.1 100 300 100 0.31 SOT-
PNP Low VCE(sat) Bipolar l 23-3
Transistor Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT5962 NPN General Purpose 0.032 Pb-free Active PNP Genera 0.2 0.1 45 45 8 - 0.7 600 1400 - 0.35 SOT-
Amplifer l 23-3
Halide Purpos
free e

MMBT6428L NPN Bipolar Transistor 0.0271 Pb-free Active NPN Genera 0.6 0.2 50 60 6 - 0.66 250 650 100 0.225 SOT-
l 23-3
Halide Purpos
free e

MMBT6429L NPN Bipolar Transistor 0.0271 Pb-free Active NPN Genera 0.6 0.2 45 55 6 - 0.66 500 1250 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT6520L High Voltage PNP Bipolar 0.0467 Pb-free Active PNP Genera 1 0.5 350 350 5 0.9 2 30 200 40 0.225 SOT-
Transistor l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT6521L NPN Bipolar Small Signal 0.0459 Pb-free Active NPN Genera 0.5 0.1 25 40 4 - - 300 600 - 0.225 SOT-
Transistor l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBT8099L NPN Bipolar Transistor 0.0248 Pb-free Active NPN Genera 0.3 0.5 80 80 6 - 0.8 100 300 150 0.225 SOT-
l 23-3
Halide Purpos
free e

MMBT918L NPN Bipolar Transistor 0.0284 Pb-free Active NPN Genera 0.4 0.05 15 30 3 1 - 20 - 600 0.225 SOT-
l 23-3
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MMBTA05L NPN Bipolar Transistor 0.0263 Pb-free Active NPN Genera 0.25 0.5 60 60 4 - 1.2 100 - 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBTA06L NPN Bipolar Transistor 0.0247 Pb-free Active NPN Genera 0.25 0.5 80 80 4 - 1.2 100 - 100 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBTA06WT1 NPN Bipolar Transistor 0.0217 Pb-free Active NPN Genera 0.25 0.5 80 80 4 - 1.2 100 - 100 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MMBTA42L High Voltage NPN Bipolar 0.0331 Pb-free Active NPN Genera 0.5 0.5 300 300 6 0.9 - 40 - 50 0.225 SOT-
Transistor l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBTA55L PNP Bipolar Transistor 0.0263 Pb-free Active PNP Genera 0.25 0.5 60 60 4 - 1.2 100 - 50 0.225 SOT-
l 23-3
Halide Purpos
free e

MMBTA56L PNP Bipolar Transistor 0.0249 Pb-free Active PNP Genera 0.25 0.5 80 80 4 - 1.2 100 - 50 0.225 SOT-
l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBTA56W PNP Bipolar Transistor 0.0217 Pb-free Active PNP Genera 0.25 0.5 80 80 4 - 1.2 100 - 50 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MMBTA92L High Voltage PNP Bipolar 0.0333 Pb-free Active PNP Genera 0.5 0.5 300 300 5 0.9 - 25 - 50 0.225 SOT-
Transistor l 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBTH10L NPN Bipolar Transistor 0.03 Pb-free Active NPN Genera 0.5 - 25 30 3 - 0.95 120; 60 240; - 800; 0.225 SOT-
l 650 23-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MMBTH10M3 NPN Bipolar Transistor Pb-free Active NPN Genera 0.5 - 25 30 3 - 0.95 60 - 650 0.64 SOT-
l 723-3
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MMJT350T1 PNP Bipolar Power 0.1389 Pb-free Active PNP Genera - 0.5 300 300 5 - - 30 240 - 2.75 SOT-
Transistor l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

MMPQ2222A Legacy Fairchild - Quad 1.04 Pb-free Active NPN Genera 1 0.5 45 75 5 2 - 100 300 200 1 SOIC-
General Purpose l 16
Transistor Halide Purpos
free e

MMPQ2907A PNP Multi-Chip General 1.04 Pb-free Active PNP Genera 1.6 0.6 60 60 5 2.6 - 100 300 250 1 SOIC-
Purpose Amplifier l 16
Halide Purpos
free e

MMPQ3904 Quad NPN 40V, 200 mA 0.9066 Pb-free Active NPN Genera 0.2 0.2 40 60 6 0.85 - 75 - 250 0.8 SOIC-
Bipolar Junction Transistor l 16
Halide Purpos
free e

MMPQ3906 Quad Amplifier/Switch 0.9066 Pb-free Active PNP Genera 0.25 0.2 40 40 5 0.85 - 75 - 200 0.8 SOIC-
Transistor l 16
Halide Purpos
free e

MMPQ6700(LEG Quad Complementary 0.9333 Pb-free Active Comple Genera 0.25 0.2 40 40 5 0.9 - 70 - 200 1 SOIC-
ACY (NPN and PNP) Quad mentar l 16
FAIRCHILD) Bipolar Transistor Halide y Purpos
free e

MPS751 (Legacy Fairchild) PNP 0.1464 Pb-free Active PNP Genera 0.5 2 60 80 5 1.2 1 40 - 75 0.625 TO-92-
60V 2 Amp Small Signal l 3
Bipolar Junction Transistor Purpos
e TO-92-
3 LF

MPSA05 NPN Bipolar Small Signal 0.0732 Pb-free Active NPN Genera 0.25 0.5 60 60 4 - 1.2 100 - 100 0.625 TO-92-
Transistor l 3 LF
Purpos
e

MPSA06 NPN Bipolar Small Signal 0.0732 Pb-free Active NPN Genera 0.25 0.5 80 80 4 - 1.2 100 - 100 0.625 TO-92-
Transistor l 3
Purpos
e TO-92-
3 LF

MSA1162 PNP Bipolar Transistor 0.042 Pb-free Active PNP Genera 0.5 0.1 50 60 7 - - 200; 400; 80 0.2 SC-59-
l 120 240 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MSB1218A-RT1 PNP Bipolar Transistor 0.0188 Pb-free Active PNP Genera 0.5 0.1 45 45 7 - - 210 340 - 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MSB92 High Voltage PNP Bipolar 0.072 Pb-free Active PNP Genera 0.5 0.15 300 300 5 0.9 - 25 - 50 0.15 SC-59-
Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MSB92A High Voltage PNP Bipolar 0.0667 Pb-free Active PNP Genera 0.5 0.5 300 300 5 0.9 - 120 200 50 0.15 SC-70-
Transistor l 3/
Halide Purpos SOT-
free e 323-3

MSB92AW High Voltage PNP Bipolar 0.0217 Pb-free Active PNP Genera 0.5 0.5 300 300 5 0.9 - 120 200 50 0.15 SC-70-
Transistor l 3/
Halide Purpos SOT-
free e 323-3

MSB92W High Voltage PNP Bipolar 0.0207 Pb-free Active PNP Genera 0.5 0.5 300 25 - 50 0.15 SC-70-
Transistor l 3/
Halide Purpos SOT-
free e 323-3

MSC2712GT1 NPN Bipolar Transistor 0.042 Pb-free Active NPN Genera 0.5 0.1 50 60 7 - - 200 400 50 0.2 SC-59-
l 3
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

MSD1819A-R NPN Bipolar Transistor 0.0272 Pb-free Active NPN Genera 0.5 0.1 50 60 7 - - 210 340 - 0.15 SC-70-
l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MSD42 NPN Silicon General 0.0219 Pb-free Active NPN Genera 0.5 0.5 300 300 6 - - 40 - 50 0.15 SC-59-
Purpose High Voltage l 3
Transistor Halide Purpos
free e

MSD42SW High Voltage NPN Bipolar 0.0333 Pb-free Active NPN Genera 0.5 0.15 300 300 6 - - 25 200 - 0.15 SC-70-
Transistor l 3/
Halide Purpos SOT-
free e 323-3

MSD42W High Voltage NPN Bipolar 0.0333 Pb-free Active NPN Genera 0.5 0.15 300 300 6 - - 40 - - 0.15 SC-70-
Transistor l 3/
Halide Purpos SOT-
free e 323-3

AEC
Qualifie
d

PPAP
Capabl
e

MSD601-R NPN Bipolar Transistor 0.0129 Pb-free Active NPN Genera 0.5 0.1 50 60 7 - - 210 340 - 0.2 SC-59-
l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

MSD602-RT1 NPN Bipolar Transistor 0.042 Pb-free Active NPN Genera 0.6 0.5 50 60 7 1 1 120 240 - 0.2 SC-59-
l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

NJD1718 2.0 A, 50 V PNP Power 0.1889 Pb-free Active PNP Genera 0.5 2 50 50 5 1.2 1.2 70 240 80 15 DPAK-
Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

NJD2873 2.0 A, 50 V NPN Bipolar 0.1751 Pb-free Active NPN Genera 0.3 2 50 50 5 1.2 1.2 120 360 65 12.5 DPAK-
Power Transistor l 3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

NJT4030P Bipolar Power Transistors, 0.1133 Pb-free Active PNP Genera 0.5 3 40 40 6 1 1 200 400 100 2 SOT-
PNP, 3.0 A, 40 V l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

NJT4031N 3.0 A, 40 V NPN Bipolar 0.12 Pb-free Active NPN Genera 0.3 3 40 40 6 1 1 200 500 215 2 SOT-
Power Transistor l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

NJW0302 Bipolar Power Transistors, 1.4 Pb-free Active NPN; Genera 1 15 250 250 5 1 1.2 75 150 30 150 TO-3P-
Complementary, 15 A, 250 PNP l 3
V Purpos
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

NJW21194 Bipolar Power Transistors, 1.9933 Pb-free Active PNP; Genera 4 16 250 400 5 - 2.2 20 70 4 200 TO-3P-
Complementary, 16 A, 250 NPN l 3
V Purpos
e

NJW44H11 NPN Power Bipolar 0.8 Pb-free Active NPN Genera 1 10 80 - 5 - 1.5 100 320 85 120 TO-3P-
Transistor, 80 V, 10 A l 3
Purpos
e

NS2029M3 PNP Bipolar Small Signal 0.026 Pb-free Active PNP Genera 0.5 0.1 50 60 6 - - 120 560 - 0.265 SOT-
Transistor l 723-3
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

NSL12AW High Current PNP Low 0.1467 Pb-free Active PNP Genera 0.29 2 12 12 5 0.95 0.95 100 300 - 0.45 SC-88-
VCE(sat) Bipolar Transistor l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6

NSM3005NZ NChannel MOSFET 20 V, 0.1067 Pb-free Active PNP Genera 0.4 0.5 30 40 5 1.1 1 40 100 - 0.8 UDFN-
224 mA with Small Signal l 6
PNP BJT, 30 V, 500 mA Halide Purpos
free e

NSM4002MR6 Dual NPN Transistors for 0.0667 Pb-free Active NPN Genera 0.3 200-Q1 40 60 6 - 1.2 100 300 300 - SC-74
Driving LEDs l 500-Q2
Halide Purpos
free e

NSM6056M NPN Transistor with Zener 0.0533 Pb-free Active NPN Genera 0.75 0.6 40 60 6 1.2 - 300 100 250 0.38 SC-74
Diode l
Halide Purpos
free e

NSM80100M PNP Transistor with Dual 0.0933 Pb-free Active PNP Genera 0.25 0.5 80 80 4 1.2 - 120 - 150 0.27 SC-74
Series Switching Diode l
Halide Purpos
free e

NSM80101M NPN Transistor with Dual 0.0933 Pb-free Active NPN Genera 0.3 0.5 80 80 6 1.2 - 120 - 150 0.27 SC-74
Series Switching Diode l
Halide Purpos
free e

NSS12100M3 Low VCE(sat) Transistor, 0.1501 Pb-free Active PNP Low 0.06 1 12 12 5 1.15 1.2 120 - - 0.48 SOT-
PNP, 12 V, 1.0 A VCE(sat) 723-3
Halide
free

NSS12100UW Low VCE(sat) Transistor, 0.1597 Pb-free Active PNP Low 0.44 1 12 12 5 1.15 1.2 200 400 200 1.1 WDFN-
PNP, 12 V, 1.0 A VCE(sat) 3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS12100XV6 Low VCE(sat) Transistor, 0.1267 Pb-free Active PNP Low 0.44 1 12 12 5 1.15 1.15 100 - - 0.65 SOT-
PNP, 12 V, 1.0 A VCE(sat) 563
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS12200L Low VCE(sat) Transistor, 0.1227 Pb-free Active PNP Low 0.09 2 12 12 7 0.9 0.9 250 - 100 0.71 SOT-
PNP, 12 V, 4.0 A VCE(sat) 23-3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS12200W Low VCE(sat) Transistor, Pb-free Active PNP Low 0.29 2 12 12 5 0.95 0.95 100 300 - 0.45 SC-88-
PNP, 12 V, 2.0 A VCE(sat) 6 / SC-
Halide 70-6 /
free SOT-
363-6

NSS12201L Low VCE(sat) Transistor, 0.1096 Pb-free Active NPN Low 0.05 2 12 12 6 0.9 0.9 200 - 150 0.54 SOT-
NPN, 12 V, 4.0 A VCE(sat) 23-3
Halide
free

NSS12500UW3 Low VCE(sat) Transistor, 0.2933 Pb-free Active PNP Low 0.26 5 12 12 7 0.9 0.9 250 - 100 1.5 WDFN-
PNP, 12 V, 8.0 A VCE(sat) 3
Halide
free

NSS12501UW3 Low VCE(sat) Transistor, Pb-free Active NPN Low 0.035 5 12 12 6 0.9 0.9 250 - 150 1.5 WDFN-
NPN, 12 V, 7.0 A VCE(sat) 3
Halide
free
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

NSS12601CF8 Low VCE(sat) Transistor, Pb-free Active NPN Low 0.05 6 12 12 6 0.9 0.9 200 - 140 1.4 ChipFE
NPN, 12 V, 8.0 A VCE(sat) T-8
Halide
free

NSS1C200 Low VCE(sat) Transistor, 0.188 Pb-free Active PNP Low 0.125 2 100 140 7 0.95 0.85 120 360 100 2 SOT-
PNP, 100 V, 2.0 A VCE(sat) 223-4 /
Halide TO-
free 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

NSS1C200L Low VCE(sat) Transistor, 0.11 Pb-free Active PNP Low 0.115 2 100 140 7 0.95 0.85 120 360 - 0.71 SOT-
PNP, 100 V, 2.0 A VCE(sat) 23-3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS1C201L 100 V, 2.0 A NPN Low 0.1096 Pb-free Active NPN Low 0.09 2 100 140 7 0.95 0.85 120 360 - 0.71 SOT-
VCE(sat) Bipolar Transistor VCE(sat) 23-3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS1C201MZ4 2.0 A, 100 V Low VCE(sat) 0.188 Pb-free Active NPN Low 0.1 2 100 140 7 1.1 0.85 120 360 100 0.8 SOT-
NPN Bipolar Transistor VCE(sat) 223-4 /
Halide TO-
free 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

NSS1C300E 3 A, 100 V Low VCE(sat) 0.2267 Pb-free Active PNP Low 0.4 3 100 140 6 1 0.9 120 360 - 12.5 DPAK-
PNP Transistor VCE(sat) 3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS1C301E 3 A, 100 V Low VCE(sat) 0.2267 Pb-free Active NPN Low 0.25 3 100 140 6 1 0.9 120 360 - 12.5 DPAK-
NPN Transistor VCE(sat) 3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS20101J 20 V, 1.0 A NPN Low 0.0427 Pb-free Active NPN Low 0.22 1 20 40 6 1.1 0.9 200 500 350 0.255 SC-89-
VCE(sat) Bipolar Transistor VCE(sat) 3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS20200DM Dual 20V 2A Low VCE(sat) 0.2208 Pb-free Active Dual Low 0.39 2 20 20 7 1.2 0.9 100 155 2.1; WDFN-
PNP Transistors in PNP VCE(sat) 1.59 6
WDFN6 Halide
free

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

NSS20200L Low VCE(sat) Transistor, 0.1039 Pb-free Active PNP Low 0.09 2 20 20 7 0.9 0.9 250 - 100 0.71 SOT-
PNP, -20 V, 4.0 A VCE(sat) 23-3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS20201L Low VCE(sat) Transistor, 0.1096 Pb-free Active NPN Low 0.05 2 20 20 6 0.9 0.9 200 - 150 0.54 SOT-
NPN, 20 V, 4.0 A VCE(sat) 23-3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS20201MR6 Bipolar Transistor, Low 0.16 Pb-free Active NPN Low 0.15 2 20 40 5 0.95 0.9 300 - 200 1.75 TSOP-
VCE(sat), NPN, 2.0 A, 20 V VCE(sat) 6
Halide
free

NSS20300MR6 Bipolar Transistor, Low Pb-free Active PNP Low 0.015 3 20 30 6 0.85 0.875 100 400 100 1.75 TSOP-
VCE(sat), PNP, 3.0 A, 20 V VCE(sat) 6
Halide
free

NSS20500UW3 Low VCE(sat) Transistor, 0.1699 Pb-free Active PNP Low 0.26 5 20 20 7 0.9 0.9 250 - 100 1.5 WDFN-
PNP, -20 V, 7.0 A VCE(sat) 3
Halide
free

NSS20501UW3 Low VCE(sat) Transistor, 0.1809 Pb-free Active NPN Low 0.04 5 20 20 6 0.9 0.9 250 - 150 1.5 WDFN-
NPN, 20 V, 7.0 A VCE(sat) 3
Halide
free

NSS20601CF8 Low VCE(sat) Transistor, 0.2133 Pb-free Active NPN Low 0.065 6 20 20 6 0.9 0.9 200 - 140 1.4 ChipFE
NPN, 20 V, 8.0 A VCE(sat) T-8
Halide
free

NSS30070MR6T 30 V, 0.7 A PNP Low 0.1467 Pb-free Active PNP Low 0.25 0.7 30 40 5 1.1 1 150 - - 0.665 SC-74
1G VCE(sat) Bipolar Transistor VCE(sat)
Halide
free

NSS30071MR6T 30 V, 0.7 A NPN Low 0.1123 Pb-free Active NPN Low 0.25 0.7 30 40 5 1.1 1 150 - - 0.665 SC-74
1G VCE(sat) Bipolar Transistor VCE(sat)
Halide
free

NSS30100L Low VCE(sat) Transistor, 0.1227 Pb-free Active PNP Low 0.25 1 30 50 5 1.2 1.1 100 300 100 0.71 SOT-
PNP, 30 V, 2.0 A VCE(sat) 23-3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS30101L Low VCE(sat) Transistor, 0.1073 Pb-free Active NPN Low 0.2 1 30 50 5 1.1 1.1 300 900 100 0.71 SOT-
NPN, 30 V, 2.0 A VCE(sat) 23-3
Halide
free

NSS30201MR6T Low VCE(sat) Transistor, 0.1699 Pb-free Active NPN Low 0.2 2 30 50 5 1.1 1.1 300 900 200 1.75 TSOP-
1G NPN, 30 V, 2.0 A VCE(sat) 6
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS35200CF8T Low VCE(sat) Transistor, 0.1389 Pb-free Active PNP Low 0.3 2 35 55 5 0.85 0.875 100 400 100 2.75 ChipFE
1G PNP, 35 V, 7.0 A VCE(sat) T-8
Halide
free

NSS35200MR6T Low VCE(sat) Transistor, 0.1127 Pb-free Active PNP Low 0.31 2 35 55 5 0.85 0.875 100 400 100 1.75 TSOP-
1G PNP, 35 V, 5.0 A VCE(sat) 6
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

NSS40200L Low VCE(sat) Transistor, 0.108 Pb-free Active PNP Low 0.095 2 40 40 7 0.9 0.9 250 - 100 0.71 SOT-
PNP, -40 V, 2.0 A VCE(sat) 23-3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS40200UW6T Low VCE(sat) Transistor, 0.3009 Pb-free Active PNP Low 0.12 2 40 40 7 0.9 0.9 150 - 140 1.5 WDFN-
1G PNP, -40 V, 2.0 A VCE(sat) 6
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS40201L Low VCE(sat) Transistor, 0.108 Pb-free Active NPN Low 0.06 2 40 40 6 0.9 0.9 200 - 150 0.54 SOT-
NPN, 40 V, 2.0 A VCE(sat) 23-3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS40300 Low VCE(sat) Transistor, 0.1716 Pb-free Active PNP Low 0.4 3 40 40 6 1 0.9 175 350 100; - 2 SOT-
PNP, 40 V, 3.0 A VCE(sat) 223-4 /
Halide TO-
free 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

NSS40300DD Low VCE(sat) Transistor, Pb-free Active Dual Low 0.095 3 40 40 7 0.9 0.75 220 - 100 0.576 SOIC-8
Dual PNP, 40 V, 6.0 A PNP VCE(sat)
Halide
free

NSS40300MD Low VCE(sat) Transistor, 0.2933 Pb-free Active Dual Low 0.095 3 40 40 7 0.9 0.75 220 - 100 0.576 SOIC-8
Dual PNP, 40 V, 6.0 A PNP VCE(sat)
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS40301 3.0 A, 40 V Low VCE(sat) 0.1533 Pb-free Active NPN Low 0.2 3 40 40 6 1 0.9 200 500 100 2 SOT-
NPN Bipolar Power VCE(sat) 223-4 /
Transistor Halide TO-
free 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

NSS40301MD Low VCE(sat) Transistor, 0.2943 Pb-free Active Dual Low 0.06 3 40 40 6 0.9 0.75 200 - 100 0.576 SOIC-8
Dual NPN, 40 V, 6.0 A NPN VCE(sat)
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS40302PD Low VCE(sat) Transistor, 0.2571 Pb-free Active Comple Low 0.06 3 40 40 6 0.9 0.75 200 - 100 0.576 SOIC-8
Complementary, 40 V, 6.0 mentar VCE(sat)
A Halide y
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS40500UW3 Low VCE(sat) Transistor, Pb-free Active PNP Low 0.22 5 40 40 7 0.9 0.9 250 - 100 1.5 WDFN-
PNP, -40 V, 5.0 A VCE(sat) 3
Halide
free
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

NSS40501UW3 Low VCE(sat) Transistor, 0.3388 Pb-free Active NPN Low 0.045 5 40 40 6 0.9 0.9 250 - 150 1.5 WDFN-
NPN, 40 V, 5.0 A VCE(sat) 3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS40600CF8 Bipolar Transistor, Low 0.2133 Pb-free Active PNP Low 0.075 6 40 40 7 0.9 0.9 250 - 100 2.75 ChipFE
VCE (sat), PNP, 6.0 A, 40 V VCE(sat) T-8
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS40601CF8 Low VCE(sat) Transistor, Pb-free Active NPN Low 0.075 6 40 40 6 0.9 0.9 200 - 140 1.4 ChipFE
NPN, 40 V, 8.0 A VCE(sat) T-8
Halide
free

NSS60100DMT Dual 60 V, 1 A, Low 0.1933 Pb-free Active Dual Low 0.3 1 60 80 6 1.1 0.9 90 - 155 1.8; WDFN-
VCE(sat) PNP Bipolar PNP VCE(sat) 2.27 6
Transistors in WDFN6 Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS60101DMR 60 V, 1 A, Low VCE(sat) 0.1067 Pb-free Active Dual Low 0.2 1 60 60 6 1.6 0.9 100 180 0.4; SC-74
NPN Transistors in SC-74 NPN VCE(sat) 0.27 (SC-
Halide 59ML)
free 6 LEAD

AEC
Qualifie
d

PPAP
Capabl
e

NSS60101DMT Dual 60V 1A Low VCE(sat) 0.18 Pb-free Active Dual Low 0.18 1 60 60 6 1.1 0.9 90 - 180 1.8; WDFN-
NPN Transistors in NPN VCE(sat) 2.27 6
WDFN6 Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS60200DM Dual 60V 2A Low VCE(sat) 0.2208 AEC Active Dual Low 0.45 2 60 60 6 1.1 0.9 40 155 1.8; WDFN-
PNP Transistors in Qualifie PNP VCE(sat) 2.27 6
WDFN6 d

Pb-free

Halide
free

PPAP
Capabl
e

NSS60200L Low VCE(sat) Transistor, 0.1403 Pb-free Active PNP Low 0.22 2 60 80 7 0.9 0.85 150 - 100 0.54 SOT-
PNP, -60 V, 4.0 A VCE(sat) 23-3
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS60200SMT Single 60V 2A Low VCE(sat) 0.172 Pb-free Active PNP Low 0.45 2 60 60 6 1.1 0.9 40 - 155 1.8 WDFN-
PNP Transistor in WDFN6 VCE(sat) 6
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

NSS60201L Low VCE(sat) Transistor, 0.1403 Pb-free Active NPN Low 0.14 2 60 140 8 0.9 0.9 150 350 100 0.54 SOT-
NPN, 60 V, 4.0 A, SOT-23 VCE(sat) 23-3
Package Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS60201SMT Single 60V 2A Low VCE(sat) 0.1663 Pb-free Active NPN Low 0.25 2 60 60 6 1.5 0.9 35 - 180 1.8 WDFN-
NPN Transistor in WDFN6 VCE(sat) 6
Halide
free

AEC
Qualifie
d

PPAP
Capabl
e

NSS60600 Low VCE(sat) Transistor, 0.1693 Pb-free Active PNP Low 0.35 6 60 100 6 1 0.9 120 360 100 2 SOT-
PNP, 60 V, 6.0 A VCE(sat) 223-4 /
Halide TO-
free 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

NSS60601MZ4 Low VCE(sat) Transistor, 0.1127 Pb-free Active NPN Low 0.06; 6 60 100 6 0.9 0.9 120 360 100 2 SOT-
NPN, 60 V, 6.0 A VCE(sat) 0.3 223-4 /
Halide TO-
free 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

NST30010MXV6 Bipolar Transistor, Dual, 0.0793 Pb-free Active Dual Genera 0.6 0.1 30 30 5 0.9 0.82 420 800 100 0.5 SOT-
PNP PNP l 563
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

NST3904DP6 Dual NPN Bipolar 0.064 Pb-free Active Dual Genera 0.3 0.2 40 60 6 0.95 - 100 300 200 0.42 SOT-
Transistor NPN l 963
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

NST3904DXV6 Dual NPN Bipolar 0.0567 Pb-free Active Dual Genera 0.3 0.2 40 60 6 0.95 - 100 300 300 0.357 SOT-
Transistor NPN l 563
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

NST3904F3T5G NPN Bipolar Transistor 0.0467 Pb-free Active NPN Genera 0.3 0.2 40 60 6 1 - 100 300 200 0.36 SOT-
l 1123-3
Halide Purpos
free e

NST3906DP6 Dual PNP Bipolar 0.0359 Pb-free Active Dual Genera 0.4 0.2 40 40 5 0.95 - 100 300 250 0.42 SOT-
Transistor PNP l 963
Halide Purpos
free e

NST3906DXV6 Dual PNP Bipolar 0.0567 Pb-free Active Dual Genera 0.4 0.2 40 40 5 0.95 - 100 300 250 0.357 SOT-
Transistor PNP l 563
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

NST3906F3T5G PNP Bipolar Transistor 0.0467 Pb-free Active PNP Genera 0.4 0.2 40 40 5 0.95 - 100 300 250 0.36 SOT-
l 1123-3
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

NST3946DP6 NPN PNP Bipolar 0.064 Pb-free Active Comple Genera 0.3 0.2 40 60 6 0.95 - 100 300 200 0.42 SOT-
Transistor mentar l (NPN) 963
Halide y Purpos 0.4
free e (PNP)

AEC
Qualifie
d

PPAP
Capabl
e

NST3946DXV6 Dual NPN PNP Bipolar 0.0501 Pb-free Active Comple Genera 0.3 0.2 40 60 6 0.95 - 100 300 200 0.5 SOT-
Transistor mentar l (NPN) 563
Halide y Purpos 0.4
free e (PNP)

AEC
Qualifie
d

PPAP
Capabl
e

NST45010 Dual PNP Bipolar 0.1333 Pb-free Active Dual Genera 6.5 0.1 45 50 5 0.9 0.82 220 475 100 0.38 SC-88-
Transistor PNP l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

NST45011MW6T General Purpose 0.1333 Pb-free Active Dual Genera 6 0.1 45 50 6 0.95 0.77 200 500 100 0.38 SC-88-
1G Transistor, Dual NPN, NPN l 6 / SC-
Matched Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

NST489 30 V, 2.0 A NPN Low 0.0629 Pb-free Active NPN Genera 0.075 2 30 50 5 1.1 1.1 300 900 200 0.535 TSOP-
VCE(sat) Bipolar Transistor l 6
Halide Purpos
free e

AEC
Qualifie
d

PPAP
Capabl
e

NST65010M DUAL MATCHED PNP 0.0533 Pb-free Active Dual Genera 6.5 0.1 65 80 5 0.9 0.82 220 475 100 0.38 SC-88-
XSTR 65V PNP l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

NST65011M DUAL MATCHED NPN 0.0533 Pb-free Active Dual Genera 6 0.1 65 80 6 0.95 0.77 200 500 100 0.38 SC-88-
XSTR 65V NPN l 6 / SC-
Halide Purpos 70-6 /
free e SOT-
363-6
AEC
Qualifie
d

PPAP
Capabl
e

NST846BF3T5G NPN Bipolar Transistor 0.0467 Pb-free Active NPN Genera 0.6 0.1 65 80 6 0.9 0.77 200 450 100 0.347 SOT-
l 1123-3
Halide Purpos
free e

NST847BDP6 Dual NPN Bipolar 0.046 Pb-free Active Dual Genera 0.6 0.1 45 50 6 0.9 0.77 200 450 100 0.42 SOT-
Transistor NPN l 963
Halide Purpos
free e

NST847BF3T5G NPN Bipolar Transistor 0.0467 Pb-free Active NPN Genera 0.6 0.1 45 50 6 0.9 0.77 200 450 100 0.36 SOT-
l 1123-3
Halide Purpos
free e

NST847BPDP6T 45 V, 100 mA NPN PNP Pb-free Active Comple Genera 0.6 0.1 45 50 6 0.9 0.77 200 450 100 0.42 SOT-
5G Bipolar Transistor mentar l (NPN) 963
Halide y Purpos 0.7
free e (PNP)

NST848BF3T5G NPN Bipolar Transistor 0.0467 Pb-free Active NPN Genera 0.6 0.1 30 30 5 0.9 0.77 200 450 100 0.347 SOT-
l 1123-3
Halide Purpos
free e

NST856BF3T5G PNP Bipolar Transistor 0.0467 Pb-free Active PNP Genera 0.8 0.1 65 80 5 0.9 0.82 220 475 100 0.347 SOT-
l 1123-3
Halide Purpos
free e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

NST857BDP6 Dual PNP Bipolar 0.064 Pb-free Active Dual Genera 0.7 0.1 45 50 6 0.9 0.82 220 475 100 420 SOT-
Transistor PNP l 963
Halide Purpos
free e

NST857BF3T5G PNP Bipolar Transistor 0.054 Pb-free Active PNP Genera 0.7 0.1 45 50 5 0.9 0.82 220 475 100 0.36 SOT-
l 1123-3
Halide Purpos
free e

NSVS50030SB3 Bipolar Transistor, -50 V, - 0.2 AEC Active PNP Low 0.2 3 50 100 3 0.88; 200 560 360 0.9 CPH-3
3 A, Low VCE(sat), PNP Qualifie VCE(sat) null
Single d

PPAP
Capabl
e

Pb-free

Halide
free

NSVS50031SB3 Bipolar Transistor, 50 V, 3 0.2267 AEC Active NPN Low 0.12 3 50 100 6 1.2 200 560 360 1.1 CPH-3
A, Low VCE(sat), NPN Qualifie VCE(sat)
Single d

PPAP
Capabl
e

Pb-free

Halide
free

NSVT1418L Bipolar Transistor -160V - 0.2 AEC Active PNP Low 0.13 1 160 180 6 1.2 100 400 0.42 SOT-
1A Low VCE(sat) PNP Qualifie VCE(sat) 23-3
Single d

PPAP
Capabl
e

Pb-free

Halide
free

NUS5530MN Integrated Power 0.518 Pb-free Active PNP Low 0.1 2 35 55 5 0.85 0.875 100 400 100 2.75 DFN-8
MOSFET with PNP Low VCE(sat)
VCE(sat) Switching Halide
Transistor free

NZT44H8 NPN Power Amplifier 0.38 Pb-free Active NPN Genera 1 8 60 - - 1.5 0.65 40 - 50 1.5 SOT-
l 223-4 /
Purpos TO-
e 261-4

NZT45H8 PNP Power Amplifier 0.3973 Pb-free Active PNP Genera 1 8 60 - - 1.5 0.65 40 - 40 1.5 SOT-
l 223-4 /
Purpos TO-
e 261-4

NZT560 NPN Low Saturation 0.2068 Pb-free Active NPN Genera 0.45 3 60 80 5 1.2 1 100 300 75 1 SOT-
Transistor l 223-4 /
Purpos TO-
e 261-4

NZT560A NPN Low Saturation 0.2356 Pb-free Active NPN Genera 0.4 3 60 80 5 1.2 1 250 550 75 1 SOT-
Transistor l 223-4 /
Purpos TO-
e 261-4

NZT651 NPN Current Driver 0.3 Pb-free Active NPN Genera 0.5 4 60 80 5 1.2 1 40 - 75 1.2 SOT-
Transistor l 223-4 /
Purpos TO-
e 261-4

NZT660 PNP Low Saturation 0.1533 Pb-free Active PNP Genera 0.55 3 60 80 5 1.25 1 100 300 75 2 SOT-
Transistor l 223-4 /
Purpos TO-
e 261-4

NZT660A PNP Low Saturation 0.1533 Pb-free Active PNP Genera 0.5 3 60 60 5 1.25 1 250 550 75 2 SOT-
Transistor l 223-4 /
Purpos TO-
e 261-4

NZT751 PNP Current Driver 0.3 Pb-free Active PNP Genera 0.5 4 60 80 5 1.2 1 40 - 75 1.2 SOT-
Transistor l 223-4 /
Purpos TO-
e 261-4

NZT753 PNP Power Transistor 0.308 Pb-free Active PNP Genera 0.3 4 100 120 5 1.25 1 100 300 75 1.2 SOT-
l 223-4 /
Purpos TO-
e 261-4

NZT902 NZT902 NPN Low 0.1967 Pb-free Active NPN Genera 0.6 3 90 120 5 1.25 - 25 - 75 1 SOT-
Saturation Transistor l 223-4 /
Purpos TO-
e 261-4

PCP1103 Bipolar Transistor, -30V, - 0.1191 Pb-free Active PNP Low 0.375 1.5 30 30 5 1.2 - 200 560 - 1.3 SOT-89
1.5A, Low VCE(sat) PNP VCE(sat) / PCP-1
Single PCP Halide
free

PCP1203 Bipolar Transistor, 30V, 0.1133 Pb-free Active NPN Low 0.225 1.5 30 40 5 1.2 - 200 560 500 1.3 SOT-89
1.5A, Low VCE(sat), NPN VCE(sat) / PCP-1
Single PCP Halide
free

PCP1208 Bipolar Transistor, Low 0.224 Pb-free Active NPN Low 0.2 0.7 200 220 8 1.2 - 200 560 120 1.3 SOT-89
VCE (sat), NPN, 0.7 A, 200 V VCE(sat) / PCP-2
Halide
free
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

PN2222(LEGAC General Purpose 0.0239 Pb-free Active NPN Genera 1.6 0.6 30 60 5 2.6 - 30 - 250 0.625 TO-92-
Y FAIRCHILD) Transistor l 3 LF
Purpos
e

PN2222A NPN Bipolar Transistor 0.0272 Pb-free Active NPN Genera 1 0.6 40 75 6 2 - 100 300 300 0.625 TO-92-
l 3
Purpos
e TO-92-
3 LF

PN2907 PNP General Purpose 0.0243 Pb-free Active PNP Genera 1.6 0.8 40 60 5 2.6 - 100 300 - 0.625 TO-92-
Amplifier l 3
Purpos
e

PN2907A General Purpose 0.0269 Pb-free Active PNP Genera 1.6 0.6 60 60 5 2.6 - 100 300 200 0.625 TO-92-
Transistor PNP Silicon l 3
Purpos
e TO-92-
3 LF

PZ3906 General Pb-free Active 100 300 250 1.5 SOT-


PurposeTransistor PNP 223-4 /
SOT223 Halide TO-
free 261-4D

PZT2222A NPN Bipolar Transistor 0.08 Pb-free Active NPN Genera 1 0.6 40 75 6 2 - 100 300 300 1.5 SOT-
l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

PZT2907A PNP Bipolar Transistor 0.0787 Pb-free Active PNP Genera 1.6 0.6 60 60 5 2.6 - 100 300 200 1.5 SOT-
l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

PZT3904 NPN Bipolar Transistor 0.0733 Pb-free Active NPN Genera 0.3 0.2 40 60 6 0.95 - 100 300 300 1.5 SOT-
l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

PZT651 NPN Bipolar Transistor 0.102 Pb-free Active NPN Genera 0.3 2 60 80 5 0.95 - 40 - 75 0.8 SOT-
l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

PZT751 High Current PNP Bipolar 0.116 Pb-free Active PNP Genera 0.3 2 60 80 5 1.2 1 40 - 75 0.8 SOT-
Transistor l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

PZTA06 NPN General Purpose 0.1367 Pb-free Active NPN Genera 0.25 0.5 80 80 4 - 1.2 100 - 100 1 SOT-
Amplifier l 223-4 /
Purpos TO-
e 261-4

PZTA42 NPN Bipolar Small Signal 0.0893 Pb-free Active NPN Genera 0.5 0.5 300 300 6 0.9 - 40 - 50 1.5 SOT-
Transistor l 223-4 /
Halide Purpos TO-
free e 261-4D

AEC
Qualifie
d

PPAP
Capabl
e

PZTA56 PNP General Purpose 0.1164 Pb-free Active PNP Genera 0.25 0.5 80 80 4 - 1.2 100 - 50 1 SOT-
Amplifier l 223-4 /
Purpos TO-
e 261-4
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

PZTA92 High Voltage PNP Bipolar 0.0893 AEC Active PNP Genera 0.5 0.5 300 300 5 0.9 - 40 - 50 1.5 SOT-
Transistor Qualifie l 223-4 /
d Purpos TO-
e 261-4D
PPAP
Capabl
e

Pb-free

Halide
free

PZTA96S High Voltage PNP Bipolar 0.2713 Pb-free Active PNP Genera 0.6 0.5 450 450 5 1 - 50 150 - 1.5 SOT-
Transistor l 223-4 /
Halide Purpos TO-
free e 261-4D

SFT1202 Bipolar Transistor, 150V, 0.2597 Pb-free Active NPN Low 0.165 2 150 180 7 0.85 - 200 560 - 1 IPAK /
2A, Low VCE(sat), NPN VCE(sat) TP
Single TP/TP-FA
DPAK-
3 / TO-
252-3

SS8050 NPN Epitaxial Silicon 0.0296 Pb-free Active NPN Genera 0.5 1.5 25 40 6 1.2 1 120; 200; 100 1 TO-92-
Transistor l 160 300 3
Purpos
e TO-92-
3 LF

SS8550 PNP Epitaxial Silicon 0.0285 Pb-free Active NPN Genera 0.5 1.5 25 40 6 1.2 1 120; 200; 100 1 TO-92-
Transistor l 160 300 3
Purpos
e TO-92-
3 LF

TIP111 NPN Epitaxial Silicon 0.2387 Pb-free Active NPN Genera 2.5 2 80 80 5 - 2.8 500 - - 2 TO-
Darlington Transistor l 220-3
Purpos
e

TIP142T NPN Epitaxial Silicon 0.81 Pb-free Active NPN Genera 3 10 100 100 5 3.5 3 500 - - 80 TO-
Darlington Transistor l 220-3
Purpos
e

TIP147F PNP Epitaxial Darlington 1.0173 Pb-free Active PNP Genera 3 10 100 100 5 3.5 3 500 - - 60 TO-
Transistor l 3PF-3L
Purpos
e

TIP147T PNP Epitaxial Silicon 0.542 Pb-free Active PNP Genera 3 10 100 100 5 3.5 3 500 - - 80 TO-
Darlington Transistor l 220-3
Purpos
e

TIP29 Complementary Silicon 0.1915 Pb-free Active Comple Genera 0.7 1 - - 5 - 1.3 15 75 3 30 TO-
Plastic Power Transistors mentar l 220-3
y Purpos
e

TIP2955 15 A, 60 V PNP Bipolar 0.7824 Pb-free Active PNP Genera 3 15 60 100 7 - 1.8 20 70 2.5 80 TO-247
Power Transistor l
Purpos
e

TIP29A NPN Bipolar Power 0.1943 Pb-free Active NPN Genera 0.7 1 60 60 5 - 1.3 15 75 3 30 TO-
Transistor l 220-3
Purpos
e

TIP29B 1.0 A, 80 V NPN Bipolar 0.1945 Pb-free Active NPN Genera 0.7 1 80 80 5 - 1.3 15 75 3 30 TO-
Power Transistor l 220-3
Purpos
e

TIP29C 1.0 A, 100 V NPN Bipolar 0.22 Pb-free Active NPN Genera 0.7 1 100 100 5 - 1.3 15 75 3 30 TO-
Power Transistor l 220-3
Purpos
e

TIP3055 15 A, 60 V NPN Bipolar 0.7661 Pb-free Active NPN Genera 3 15 60 100 7 - 1.8 20 70 2.5 80 TO-247
Power Transistor l
Purpos
e

TIP30C 1.0 A, 100 V PNP Bipolar 0.2267 Pb-free Active PNP Genera 0.7 1 100 100 5 - 1.3 15 75 3 30 TO-
Power Transistor l 220-3
Purpos
e

TIP31A NPN Bipolar Power 0.1544 Pb-free Active NPN Genera 1.2 3 60; 40 60 5 - 1.8 10 50 3 40 TO-
Transistor l 220-3
Purpos
e

TIP31B NPN Bipolar Power 0.2223 Pb-free Active NPN Genera 1.2 3 80 80 5 - 1.8 10 50 3 40 TO-
Transistor l 220-3
Purpos
e

TIP31C NPN Bipolar Power 0.2467 Pb-free Active NPN Genera 1.2 3 100 100 5 - 1.8 10 50 3 40 TO-
Transistor l 220-3
Purpos
e

TIP32A PNP Bipolar Power 0.1577 Pb-free Active PNP Genera 1.2 3 60; 40 60 5 - 1.8 10 50 3 40 TO-
Transistor l 220-3
Purpos
e

TIP32B PNP Bipolar Power 0.1624 Pb-free Active PNP Genera 1.2 3 80 80 5 - 1.8 10 50 3 40 TO-
Transistor l 220-3
Purpos
e
www.onsemi.com
Energy Efficient Innovations
General Purpose and Low V<sub>CE(sat)</sub> Transistors
Product Description Pricing Compli Status Polarity Type VCE(sat) IC Cont. VCEO VCBO VEBO VBE(sat) VBE(on) hFE Min hFE fT Min PTM Packag
($/Unit) ance Max (V) (A) Min (V) (V) (V) (V) (V) Max (MHz) Max e Type
(W)

TIP32C PNP Bipolar Power 0.2679 Pb-free Active PNP Genera 1.2 3 100 100 5 - 1.8 10 50 3 40 TO-
Transistor l 220-3
Purpos
e

TIP33C High Power NPN Bipolar 0.7733 Pb-free Active NPN Genera 4 10 100 100 5 - 3 20 100 3 80 TO-247
Power Transistor l
Purpos
e

TIP35A 25 A, 60 V NPN Bipolar 1.331 Pb-free Active NPN Genera 4 25 60 60 5 - 4 15 75 3 125 TO-247
Power Transistor l
Purpos
e

TIP35C 25 A, 100 V NPN Bipolar 1.2066 Pb-free Active NPN Genera 4 25 100 100 5 - 4 15 75 3 125 TO-247
Power Transistor l
Purpos
e

TIP36A 25 A, 60 V PNP Bipolar 1.1313 Pb-free Active PNP Genera 4 25 60 60 5 - 4 15 75 3 125 TO-247
Power Transistor l
Purpos
e

TIP36C 25 A, 100 V PNP Bipolar 1.2266 Pb-free Active PNP Genera 4 25 100 100 5 - 4 15 75 3 125 TO-247
Power Transistor l
Purpos
e

TIP41 NPN Bipolar Power 0.2275 Pb-free Active NPN Genera 1.5 6 60; 80; 60; 80; 5 - 2 15 75 3 65 TO-
Transistor l 100 100 220-3
Purpos
e

TIP42 PNP Bipolar Power 0.2089 Pb-free Active PNP Genera 1.5 6 60; 80; 60; 80; 5 - 2 15 75 3 65 TO-
Transistor l 100; 40 100; 40 220-3
Purpos
e

TIP47 1.0 A, 250 V NPN Bipolar 0.2392 Pb-free Active NPN Genera 1 1 250 350 5 - 1.5 30 150 10 40 TO-
Power Transistor l 220-3
Purpos
e

TIP48 1.0 A, 300 V NPN Bipolar 0.2503 Pb-free Active NPN Genera 1 1 300 400 5 - 1.5 30 150 10 40 TO-
Power Transistor l 220-3
Purpos
e

TIP49 NPN Silicon Transistor 0.2047 Pb-free Active NPN Genera 1 1 350 450 5 - 1.5 30 150 10 40 TO-
l 220-3
Purpos
e

TIP50 1.0 A, 400 V NPN Bipolar 0.2867 Pb-free Active NPN Genera 1 1 400 500 5 - 1.5 30 150 10 40 TO-
Power Transistor l 220-3
Purpos
e

UMZ1N NPN PNP Bipolar 0.0264 AEC Active Comple Genera 0.25; 0.2 50 60 7 - - 200 400 - 0.25 SC-88-
Transistor Qualifie mentar l 0.3 6 / SC-
d y Purpos 70-6 /
e SOT-
PPAP 363-6
Capabl
e

Pb-free

Halide
free
www.onsemi.com

Potrebbero piacerti anche