Class -XII

PHYSICS
SQP Marking Scheme
2019-20

Section – A
1. a, ϕ= (for one face) 1

2. b , Conductor 1

3. a , 1Ω. 1

4. c ,12.0kJ 1

5. a , speed 1

6. d, virtual and inverted 1

7. a, straight line 1

8. d, 60 O 1

9. b, work function 1

10. b, third orbit 1

11. 45 O or vertical 1

12. 2H 1

13. double 1

14. 1.227 Ao 1

15. 60° 1

16. Difference in initial mass energy and energy associated with mass of products 1
Or
Total Kinetic energy gained in the process

17. Increases 1

18. No/8 1

19. 0.79 eV 1

20. Diodes with band gap energy in the visible spectrum range can function as LED 1
1
 OR
Any one use
Section – B

21. When electric field E is applied on conductor force acting on free electrons
= -e

Thy ty

Thy Thy
m = -e
Thy

=
TS

Average thermal velocity of electron in conductor is zero 1

(ut)av= 0
Average velocity of electron in conductors in τ (relaxation time) = vd (drift velocity)
vd = (ut)av + a τ
vd = 0 +
1
=

22. U
as
I

|
IT

6V Ci = 1yuF

2UF = C3

Cs = 2uF

C2 and C3 are in series

a1i
Als

main

= + =1
= 1μf 1
%

& C4 are in ∥
C” = 1 + 1 = 2μf
C” & c5 are in series
“13

ALN

ALN

= + ⟹ = 1μf
~
S
&

& c1 are in ∥
Ceq = 1 + 1 = 2μf
1
Energy stored
ales

U = cv2 = ×2×10-6×62
= 36×10-6J

2
23. Gain in KE of particle = Qv

i
3 My, Vp
2 = KP = qpVp ----------(i)Vp = V∝ =V
1
7m
2
Vy = K∝ = q∝V∝ -----------(ii)

(ii)/(i)
MyVx 1
= dx = 2
Mvp dp
Ve mp *? zmp 1
= = =
vp mg, x1 amp x1 2

v∝ : vp = 1: V?

24. “The angle of incidence at which the reflected light is completely plane
polarized, is called as Brewster’s angle (iB)

Rare

Denser

At i = iB, reflected beam 1 to refracted beam

∴ iB + r = 90 ⟹ r = 90-iB
Using snell’s law 1
Sint
=μ
Sinr
Sin ip Sin ip
=μ⟹ =μ
Sin (90-ip) Cos ig
μ = tan Tp

25. wave function

ω = 2.14eV
(a) Threshold frequency ω = hν0
w 214x16x1077 1
ν0 = =
h 6.62x 1077
3
 = 5.17× 1014 Hz
(b) As kmax = eV0 = 0.6eV
Energy of photon E = kmax + ω = 0.6eV + 2.14eV
= 2.74eV
1
Wave length of photon λ = he} = 662x107**x3x1078
E 2.74x1.48x10717
= 4530Å

26.

electron

centripetal force = electrostatic attraction 1

=

= --------(i)

as =n.

= put in (i)
1
z z
1 se
m. =
4re0 ry

OR

Energy of electron in n = 2 is -3.4eV

En = ⇒ -3.4eV = ⇒
%

"ak

∴ energy in ground state = -13.6eV

a

1
kE = -TE = +13.6eV energy in ground state x = - 13.6eV.

4
 PE = 2TE = -2×13.6eV = -27.2eV 1

27. Any
2x1
=1
P-type semiconductor n-type semiconductor
1. Density of holes >> density of 1. density of
electron electron>>density of holes

2. Formed by doping trivalent 2. formed by doping pentavalent

impurity impurity
Energy band diagram for p-type Energy band diagram of n-type
semiconductor
CB

CB
Eg
—© 20200 00000 22 {ona
| Acceptor
26 ho energy
—
—._727_*_
level level
te
ee — a ri
Vo v8
ee
e
a*
e v
VB
eee a y a
v v

OR

he} 66210724 x3x198

Energy of photon E = = eV =2.06eV 1
Az” 6000x1077x1.6x10717

As E<Eg (2.8eV), so photodiode cannot detect this photon. 1

Section – C

28.
Principle of potentiometer, when a constant current flows through a wire of uniform
area of cross-section, the potential drop across any length of the wire is directly
proportional to the length.
Let resistance of wire AB be R1 and its length be ‘l’ then current drawn from
driving cell –
V
I= and hence 1
R+R1
P.D. across the wire AB will be
V 218
VAB = IR1 = ×
ARt+RI1 a

Where ‘a’ is area of cross-section of wire AB 1

VAB Ve
∴ = = constant = k
1 (R+R1)a

Where R increases, current and potential difference across wire AB will be 1

5
 decreased and hence potential gradient ‘k’ will also be decreased. Thus the null point
or balance point will shift to right (towards, B) side.

29.

According to Biot-Savart’s law, magnetic field due to a current element is given by

SOMO Idix?
dB = FS where r = x?+ a?
4x rr
1/2
uO Idi sin30°
∴ dB =
4x x*+07
—_— _ 4
And direction of dB is ⊥ to the plane containing I dland r.
—_—
Resolving dB along the x – axis and y – axis.
dBx = dB sin 4
dBy = dB cos 6
taking the contribution of whole current loop we get
Bx = ∮dBx = ∮dBsin = oe . pO Idl
4m x*+ a? Vx*4 a=
a

1/2
Bx = uO In
4n (xt+ a@z)5/2
∮dl = uO In x2na
4n (xt+ @z)5/2

And By = ∮dBy = ∮dBcos 6= 0

2 2
∴ BP = BB,x + B,
¥
= Bx = uo
— ——_
214
4 (xe2+ @28/2

=>
∴ BpPan
«po
= ———(-
2m
= )
— : 1
(22+ @2)8/2 ( m IA

For centre x = 0
BO 2Ina? i —
∴ [B = me a =
HOC.) in the direction of m

6
 1
30. resonant frequency for LCR circuit is given by Vo = 1
2nVit
1
=
2%3.14V3 x27x10-©
= 17.69Hz
Or @q = 2TV; = 111rad/s.
1
quality factor of resonance

Q = fo = wool = 1 ik
2Aw RK RAC

∴Q= 1 3
= 45.0
7.44) 27x10-&

To improve sharpness of resonance circuit by a factor 2, without reducing Wo ; reduce 1

R to half of its value i.e. R = 3.7Ω
31. A

X\
7 €
~
7 €
\ r=39.4°
7 é
1

A5%
B C

Two conditions for T IR –

(a) Light must travel from denser to rarer medium
(b) i>ic
Sin ic =
=a 1

∴ (ic)Red = Sin-1
( 1
=) = 46°
L359.

(ic) Green= Sin-1 = 44.8° 1

14
1
(ic)Blue = Sin-1 = 43°
1.48

Angle of incidence at face AC is 45° which is more than the critical angle for Blue 1
and Green colours therefore they will show TIR but Red colour will refract to other
medium.

32. Resolving power (R.P) of an astronomical telescope is its ability to form separate
images of two neighboring 1
astronomical objects like stars etc.
1 D
R.P. = — = where D is diameter of objective lens and A is wave length
aa 1.224

7
of light used. 1
D = 100inch = 2.54×100cm = 254cm
= 2.54m
A = 6000Å
1.224
Limit of resolution a9 = 1
D
1.22*x6000x107*°m
=
254«1077m

= 2.9× 190719
OR

Basic assumptions in derivation of Lens-maker’s formula:

(i) Aperture of lens should be small
(ii) Lenses should be thin 1
(iii) Object should be point sized and placed on principal axis.

Cc

Suppose we have a thin lens of material of refractive index n2, placed in a medium of
refractive index n1, let o be a point object placed on principle axis then for refraction
at surface ABC we get image at I1 ,
∴ My - Mg = MNgTMs ---------(1)
ve ou Ry

But the refracted ray before goes to meet at I1 falls on surface ADC and refracts at I2

8
 finally; hence I1 works as a virtual object 2nd refracting surface

∴ My - Ny = Mah --------- (2)

vv Ry
Equation (1) + (2)

2- mom)(F-%
mp omy L 1
¥ =( Zz i) 2 Re

1 1 ii
∴ —~—--
v = (My-1
21 ) (—-=
R, Rez --------(3)

If u = ∞, ѵ = f
1
i 1 1
= = (Maz—1
21 Ry --------(4)
) (—-—=
R.

Which is lens maker’s formula.

228
33. 92U → 237
aifa + 13H + Q
Q = [MU – MPa – MH] c2 1
= [ 238.05079 – 237.05121 – 1.00783] u × c2
= - 0.00825u × 931.5
MsV 1
u
= - 7.68MeV
1
Q <0 ; therefore it can’t proceed spontaneously. We will have to supply energy of
7.68MeV to 23832U
nucleus to make it emit proton.

34. Circuit Diagram

1
es A D,
LT
— Vo—— WY
ott} yy

—___ 5 rm. S
i
D,

One possible answer: Change the connection of R from point C to point B. 2

Now No Current flowing through D2 in the second half.

1 mark for any correct diagram

2 marks for correct explanation

9
 Section – D
35.
(a)
Acm* —=—
ds2

my
bebe be eee abe
me» 1
as,

According the Gauss’s law –


∮N , d s = {q}
<o
  
∫ E d Ss.4+ ∫ E ds;
s2+ ∫ E ds; sy 3 = 2
— (λL)
—
∫Eds1Cos0 + ∫Eds2Cos90o+ ∫Eds3Cos90o = AL 1
<0
E∫ds1 = aL
0
E × 2πrL = AL
€0
E= a
 2ne0r
E= A 4 1
27E0r

35.
(b) Se

met
——
42>ia —

—a—__ a

<—a—>

∵ Ex = ∝ x = 400x
Ey = Ez = 0
Hence flux will exist only on left and right faces of cube as Ex≠ 0
= = _ 1
∵ E, . a2 (m2) + Ex, . a2®e = FZ {qin} = @g
1
- Ey, . a2 (nz) + a2Ex = net
Onet = -(400a)a + a (400 × 2a)
2 2

= -400a3 + 800a3
= 400a3
= 400 × (.1)3
Onet
= 0.4 Nm2c-1

10
 cal
∵ Onet = {qin}
ed

∴ qin = 09...
1
= 8.85 × 10-12 × 0.4
= 3.540×10-12c

OR

(a) Definition of electrostatic potential – SI unit J/c of Volt. 1

Deduction of expression of electrostatic potential energy of given system of charges –
2
1 qigq2 qigq3 q2 qa
U=
treo wiz wiz rig

(b)

(2)

36. For forward motion from x = 0 to x = 2b.

The flux ϕB linked with circuit SPQR is
es
te.
OSE
ae

11
 ϕB = Blx 0≤x<b 1
Blb b≤x<2b
The induced emf is,
e=
e = -Blѵ 0≤x<b 1
=0 b≤x<2b
When induced emf is non-zero, the current İ in the magnitude;
I = e = Bly
The force required to keep arm PQ in constant motion is F =IlB. Its direction is
to the left. In magnitude
By
F =IlB = ; 0≤x<b
1
=0 ; b≤x<2b
The Joule heating loss is
PJ = I2 T
= 0≤x<b 1
=0 b≤x<2b

One obtains similar expressions for the inward motion from x = 2b to x = 0

BIO = K
2 7
L M L \
ae PDE “.
b 2b b “

VW
Blv4e

0 b 2b
|
b
|_s,
7

Blv -+- 1

VW
PAN Outward Inward
a —) ? .
O
a b 2b 7

VW

12
 OR

1
Working principle of cyclotron 1
Diagram
2
Working of cyclotron with explanation
1
Any two appliations

37.

1
B Se
B

eee A F

2
Deduction of mirror formula
a[e

i a
of

+ =

For a convex mirror f is always +ve.

∴f>c 1
Object is always placed in front of mirror hence u < 0 (for real object)

+ =
a|[e

ele
mf
ade

mlb

ele

⇒ = -

As u < 0 u –ve hence

1
a[e

>0

⇒ v> 0 i.e. +ve for all values of u.

Image will be formed behind the mirror and it will be virtual for all values of u.

OR

37. Ray Diagram : (with proper labeling) 1

(a)

13
 Fe
7
B Fo meee at.

SslXeE Fe aA ~"--
1 Be ano

A Fo Fo* . Fe
S

<— u0—>
Objective Lens < “Vo WA =
‘ . Be \> Eye Piece

Y D
Magnifying power m = (1 + =.)
Up f
1
m = =(1 +=)
L D

fo fe

37. ∵ m = mo me = -30 (virtual, inverted)

(b) ∵fo = 1.25cm
fe = 5.0cm
Let us setup a compound microscope such that the final image be formed at D, then
me = 1 + Bo = 1 + 3s = 6
1
fe 5

and position of object for this image formation can be calculated –

42ada1
- =
Va ue fe
1 1
- =
2 ue 5

1 1 1 6
- = + =
ue 5 25 25

—25
1
ue = —= - 4.17cm.
6

∵ m = mo × me
4V¥e —3d
∴ mo = = = -5
uo

∴ V = -5uo
aio.
- =
Ve uo fo
1 1 1
- =
—-Su0 uo 125

14
 6 1
=
5uo 125

uo = -1.5cm ⟹vO = 7.5cm

Tube length = Vo +|ue| = 7.5cm + 4.17cm 1
L = 11.67cm
Object should be placed at 1.5cm distance from the objective lens.

15