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Keywords: cold work, x-ray diffraction, strain induced martensite, dislocations, Mott-Schottky, defect densities, electrochemical behaviour
Abstract
The effect of cold work (CW) on electrochemical behaviour of Cr-Mn austenitic stainless steel (AISI
202) in 3.5% NaCl solution was studied through microstructure, x-ray diffraction (XRD), Mott-
Schottky (M/S) techniques, Potentiodynamic polarization (PDP), and Electrochemical Impedence
Spectroscopy (EIS). The XRD spectrum was used to estimate volume fraction of martensite and
dislocation density, whereas EIS and PDP plots were used to evaluate electrochemical behaviour. The
M/S plots were used to estimate defect densities of passive film. It is found that as the cold work is
increased, austenite transform to martensite and dislocation density increases. It is also found that
corrosion resistance of the material decreases as the cold work is increased. When cold work is upto
15%, the material shows passivity. At higher cold work the material looses passivity. It is also found
that defect density of passivating film is more when Cr-Mn stainless steel is subjected to more cold
work. Most importantly, a relationship between dislocation density of the substrate and defect density
of the film has been noticed.
1. Introduction
Excellent corrosion resistance of Austenitic stainless steels (ASS) is due to its Cr-content and ability to form a
film of Cr2O3. Higher the Cr content better is the corrosion resistance [1–4]. M S−1 analysis gives information
about structure of the film [4–6]. It is found that most of the time the passive film of ASSs has a bi-layer structure;
inner layer is made of Cr2O3 and outer layer is made of Fe2O3 [3–6]. The Cr2O3 is a metal deficient oxide and
exhibits a p-type semiconducting behaviour. The Fe2O3 is a metal excess oxide and exhibits an n-type
semiconducting behaviour [7–9]. The M/S analysis also gives information about defect densities of the passive
film in terms of donor densities (ND) for p-type semiconducting oxides and acceptor density (NA) for n-type
semiconducting oxides. It is observed that defect density is (i) a function of Cl− content of test solution
[2, 10–13] and (ii) a function of Cr-content of stainless steel (SS) [9].
For a particular SS and test solution the cold work (CW) is found to adversely affect the corrosion resistance
[14–16]. It is important to understand the reason for this adverse effect on corrosion resistance of AISI 202 in
3.5% NaCl solution. For 304 S exposed to saturated calcium hydroxide solution, the NA and ND were found to
increase from 5×1021 and 1×1021 cm−3 to 11×1021 and 4×1021 cm−3, respectively [17]. It is known that
the cold work increases dislocation density of substrate and in case of SS causes formation of strain induced
martensite (SIM) [18–20]. Therefore, there must be some relationship between the dislocation density and
martensite content of substrate with defect densities (NA and ND) of the passivating film of particular SS in a
particular environment.
The Cr-Mn austenitic stainless steel, referred to as Cr-Mn SS hereafter, is receiving attention in industry due
to its low cost and low Ni content. Literature on effect of cold work on corrosion rate and defect densities of
passive film of Cr-Mn SS is scanty. The present paper therefore investigated the effect of cold work on corrosion
rate of Cr-Mn SS in 3.5% NaCl solution. The attempt is made to correlate dislocation densities with NA of the
passivating film by varying degree of cold work.
2. Experiment
Cr-Mn SS was a 6 mm sheet, whose chemical composition is presented in table 1. The samples
(50×10×6 mm3) were subjected to solutionizing (1 h: 1050 °C: water quench). These samples were then
subjected to reduction in thickness by rolling and designated as 15%, 30%, and 50% cold work (CW). Samples
for microstructure analysis (size of 10×10 mm2) were prepared by polishing through series of emry papers
upto 1500 grit, after which cloth polishing was done by using alumina powder and then electro-etched in 10 wt%
oxalic acid at 1.0 V (90 s). XRD was used to analyse various phases present in samples on or before cold work. It
was also used to estimate volume fraction of martensite. Hardness was measured with Vickers microhardness
tester. Potentiostatic and potentiodynamic polarization (PDP), electrochemical impedance spectroscopy (EIS),
and M/S measurements were used for Electrochemical investigations. Test solution was 3.5% NaCl solution. A
three electrode cell (sample, platinum, and saturated calomel electrode-SCE) was used. Tests were conducted on
Biologic make VMP-300 potentiostate controlled by EC lab software. After setting up the cell and filling test
solution, the working electrode (WE) was allowed to attain a steady state open circuit potential (OCP) for 1.5 h
and its OCP was measured. Then EIS and PDP measurements were conducted sequentially. Frequency range of
106 to 10−2 was used with sinusoidal AC signal of 10 mV for the EIS test at OCP. The PDP test was performed
between −0.5 V (versus OCP) to +0.5 V (versus OCP) at 0.018 mV s−1 scan rate. The M-S measurements were
performed at a scan rate of 50 mV s−1 (from 0.6 VSCE to −0.6 VSCE) [21].
j ⎡ (Ia ¢ ) ⎤
j
( )å
1
n ⎢ (R j ) ⎦⎥
i = 1⎣
a¢
Va¢ = (1)
j ⎛ I gj ⎞ j ⎡ (Ia ¢ ) ⎤
j
( )å
1
n
⎜ ⎟
i = 1⎝ R gj ⎠
+ ( )å
1
n i = 1⎢
⎣ (R j ) ⎥⎦
a¢
Where, I represents the integrated intensity, n represents number of peaks of different phases and R represents
the material scattering factor. Table 2 shows the values of R [19, 22] used in the present estimation whereas
values of volume fraction of martensite was given in table 3. It was found that, as compared to solution annealed
sample, on increasing cold work, volume fraction of martensite increases. At 15% cold work, 19.08% martensite
has been observed, whereas at 30% cold work martensite increases to 37.51%. On further cold work upto 50%,
volume fraction of martensite increases to 55.54%, i.e., fraction of martensite becomes more than volume
fraction of austenite. As it is mention in one of the literature that intersection of two deformation bands form
ε-martensite platelets [24] and intersection of two ε-martensite platelets gives α′-martensite [25]. In order to
check effect of cold work on hardness, cold work samples were subjected to hardness measurement by Vickers
microhardness tester. These hardness values are also tabulated in table 3. Hardness also shows same trend as
shows by volume fraction of martensite. It is evident that as percentage of cold work increases, hardness also
increases. This is attributed to increase in the volume fraction of martensite.
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Mater. Res. Express 5 (2018) 066535 S Shukla et al
Table 2. Effect of cold work on relative XRD peak intensity and values of R.
Volume Dislocation
fraction Hardness density (ρ),
Sample (%) (HV) m−2 ×1017
SA 0 244.20 3.106
SA+15% CW 19.08 363.32 4.780
SA+30% CW 37.51 495.92 7.925
SA+50% CW 55.54 602.62 10.023
XRD data was then used to estimate dislocation density (ρ) of test samples using following equations [26]:
r = (rd ´ rs )1 / 2 (2)
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Mater. Res. Express 5 (2018) 066535 S Shukla et al
Figure 2. SEM microstructure of (a) SA and CW samples at (b) 15%, (c) 30%, and (d) 50%.
Where, ρd and ρs represents dislocation density on account of domain size and strain broadening, respectively.
3
rd = (3)
D2
Ke 2
rs = (4)
b2
Where, D=Crystallite size, b—Burgers vector, k=6π, e-microstrain, b—Burgers vector (b=a/ 2 ) and a—
lattice parameter. Table 3 shows ρ values as a function of increasing cold work. From table 3, it can be observed
that as the degree of cold work increases, the dislocation density increases.
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Mater. Res. Express 5 (2018) 066535 S Shukla et al
Figure 3. Optical microstructure of (a) SA and CW samples at (b) 15%, (c) 30%, and (d) 50%.
has excess cation (in intersticial space) or oxygen deficient, which are considered as donor of the charge.
Therefore it is termed as a donor density (ND). The slope of the linear region of the M-S plot is then used to
estimate defect densities.
Defect densities of passive film are calculated from space charge capacitance (C) using equations (5) and (6)
[27–29].
1 2 ⎡ KT ⎤
= ⎢E - EFB - ⎥ n‐type semiconductor (5)
C2 eeo eND ⎣ e ⎦
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Mater. Res. Express 5 (2018) 066535 S Shukla et al
SA 8.10
SA+15% CW 9.52
SA+30% CW 12.45
SA+50% CW 14.01
1 2 ⎡ KT ⎤
= ⎢E - EFB - ⎥ p‐type semiconductor (6)
C2 eeo eNA ⎣ e ⎦
Where, C is capacitance at space charge region, ε—dielectric constant (12 for passive film in ASS) [21],
ε0—vacuum permittivity (8.854×10−12 Fm−1), e—electron charge (1.6×10−19 C), k—the Boltzmann
constant (1.38×10−23 JK−1), ND—donor density, NA—acceptor density, T—temperature in K, E—applied
potential and Efb—flat band potential.
For n-type semiconductor, plot of 1/C versus E is linear and its slope is positive. The slope is inversely related
to donor density. On the other hand, p-type semiconductor yields a negative slope and has inverse relationship
with the acceptor density.
M/S analysis were carried out to estimate defect densities of passive film of Cr-Mn SS in NaCl solution.
Figure 5 shows M/S plots of Cr-Mn SS at different cold work in 3.5% NaCl solution. As compared to schematic
of M/S plot (figure 4), the plots in figure 5 show only left hand side of valley. It means the plots in figure 5 only
shows left hand side part of valley that has negative slope. The plot does not rise after reaching a minimum value.
The other part of valley with positive slope is absent. In case of SS, it is known that part of valley with negative
slope indicates formation of inner layer of Cr2O3 and part of valley with positive slope indicates formation of
outer layer of Fe2O3 [6]. Therefore, from the M/S plots it can be deduced that film on Cr-Mn SS in NaCl solution
has only mono layer of Cr2O3, not a bilayer (Cr2O3 and Fe2O3). The slope of the linear region was used to
estimate acceptor density (NA) as shown in table 4. Table 4 conclude that on increasing cold work degree, NA also
increases. Similar plots are reported by C M Rangel et al for AISI 304 S in boiling solution of
H3BO4(270 g L−1)+NaCl(2 g L−1) of pH 2.2 [30] and X Fenga et al [31] for 304 s in 0.05 M Cl− solution
of pH 9.
Figure 6 shows effect of cold work on dislocation density and charge carrier density. It can evident that as
percentage of cold work increases, dislocation density and charge carrier density increases. This clearly means
that there is some relationship between dislocation density of substrate with defect density of the passive film of
Cr-Mn SS in 3.5% NaCl solution. X Fenga et al investigated how cold work affects corrosion of 304 S in chloride
solution. Their results show that the charge carrier density increases with increase in deformation level [31]. Due
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Mater. Res. Express 5 (2018) 066535 S Shukla et al
to increase in cold work, dislocation density and stored energy increases, which then increases driving force for
electrochemical reaction and as a consequence corrosion rate increases [32].
C M Rangel et al found that on cold working of 304 ASS, the NA of film increases from 3.5×1021 (cm−3) to
6.5×1021 (cm−3) in H3BO4+NaCl solution [30]. J-B Lee et al [33] observed that on addition of nitrogen to 316L, the
defect densities of passivating film decreases and it reduces metastable pitting tendency. X Fenga et al found that on
increasing cold work from 0.4% to 40%, the defect density of passivating film of 304 in 0.05 NaCl solution of pH 9 [31].
Hence, it can be seen that as cold work increases, more dislocation are generated and more strain induced
martensite is formed, this increases charge carrier densities of passivating film and subsequently the corrosion
rate of test steel increases.
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Mater. Res. Express 5 (2018) 066535 S Shukla et al
Figure 9. Nyquist plots of: (a) experimental curve with simple circuit fitted curve for 30% CW, (b) experimental curve with second
time constant fitted curve for 30% CW, (c) experimental curve with simple circuit fitted curve for 50% CW, (b) experimental curve
with second time constant fitted curve for 50% CW .
curve obtained from simple circuit and second time constant circuit. It is observe that the experimental curve is
not being fitted with the curve of simple circuit for both 30% and 50% CW. On the other side, both curve is being
fitted with second time constant curve.The CPE is included [35, 36] because it takes into account the
heterogeneities of the electrode surface. The equation for impedance is given by:
1
Z CPE = (Jw )-n (7)
Q
Therefore, total impedence is given as:
⎡ 1 + R2 C j w ⎤-1
Z total = Rsol . + ⎢Q (Jw )n + ⎥ (8)
⎣ R1 + R2 + R1 R2 C j w ⎦
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Mater. Res. Express 5 (2018) 066535 S Shukla et al
This circuit consist of the ohmic resistance of the solution (Rsol) which is in series with passive film
admittance (Q), in parallel with the passive layer resistance (R1), which in turn is in series with a parallel
connection of the charge transfer resistance (R2) and double layer capacitance (C). Therefore in this work, some
physical interpretation has been adopted: the resistance at high frequency time constant (R1, Q) corresponds to
surface area covered with outer layer of passive film. Similarily, low frequency time constant (R2, C) was assigned
to area covered with inner compact layer which becomes active (i.e., metal/film interface and active pits due to
Cl− ions) [4]. The EIS results obtained by using this circuit explain the corrosion activity as well as passivity of
Cr-Mn SS in NaCl solution. Table 5 shows the fitted parameters and highlights the effect of cold work. It is
observed that as degree of cold work increases, the values of R1 and R2 decrease, i.e., impedance of the passive
film decreases. The R1 value is almost 20% of R2 value. It signifies that the charge transfer reaction occurring at
metal/film (M/F) interface are much slower than that occuring at film/surface (F/S) interface. With increasing
cold work, the resistance of the film decreases meaning that the film should have more defects. This is what has
been found in M-S analysis. Thus both the results complement each other.
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Mater. Res. Express 5 (2018) 066535 S Shukla et al
4. Conclusion
1. The cold work (CW) causes transformation of austenite to strain induced martensite (SIM).
2. The amount of SIM increases with increasing cold work.
3. The cold work also increases dislocation density (dd) of substrate and the dd increases with increasing
cold work.
4. Mott-schotky (M-S) analysis suggests that the defect densities of the passivating film increases with
increasing cold work.
5. M-S analysis also shows that the passivating film has p-type semiconducting behaviour.
6. The EIS results show that the film resistance decreases on increasing cold work.
7. The Cr-Mn ASS looses passivity when cold work is more than 15%. Therefore, such a situation should be
avoided.
ORCID iDs
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Mater. Res. Express 5 (2018) 066535 S Shukla et al
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