2SA1358

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA1358
Audio Frequency Power Amplifier Applications
Unit: mm

• Complementary to 2SC3421
• Suitable for driver of 60 to 80 watts
• High breakdown voltage

Absolute Maximum Ratings (Tc = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO −120 V

Collector-emitter voltage VCEO −120 V
Emitter-base voltage VEBO −5 V
Collector current IC −1 A
Base current IB −100 mA

Collector power Ta = 25°C 1.5

PC W
dissipation Tc = 25°C 10
Junction temperature Tj 150 °C JEDEC ―
Storage temperature range Tstg −55 to 150 °C JEITA ―

Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-8H1A
temperature/current/voltage and the significant change in Weight: 0.82 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

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Electrical Characteristics (Tc = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = −120 V, IE = 0 ― ― −100 nA

Emitter cut-off current IEBO VEB = −5 V, IC = 0 ― ― −100 nA
Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 −120 ― ― V
Emitter-base breakdown voltage V (BR) EBO IE = −1 mA, IC = 0 −5 ― ― V
hFE
DC current gain VCE = −5 V, IC = −100 mA 80 ― 240
(Note)
Collector-emitter saturation voltage VCE (sat) IC = −500 mA, IB = −50 mA ― −0.40 −1.0 V
Base-emitter voltage VBE VCE = −5 V, IC = −500 mA ― −0.77 −1.0 V
Transition frequency fT VCE = −5 V, IC = −100 mA ― 120 ― MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz ― 30 ― pF

Note: hFE classification O: 80 to 160, Y: 120 to 240

Marking

Lot No. Characteristics indicator

A1358 Part No. (or abbreviation code)

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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IC – VCE hFE – IC
−1200 1000
Common emitter Common emitter
Tc = 25°C

hFE
−15 500 VCE = −5 V
−1000
−10
(mA)

300

DC current gain
Tc = 100°C
−800
25
Collector current IC

−7
100
−600 −5 −25
50
−4
−400 −3 30
−3 −10 −30 −100 −300 −1000
−2

−200 Collector current IC (mA)

IB = −1 mA

0
0
0 −2 −4 −6 −8 −10 −12

Collector-emitter voltage VCE (V)

VCE (sat) – IC IC – VBE

−3 −1000
Common emitter
Collector-emitter saturation voltage

Common emitter
VCE = −5 V
IC/IB = 10
−1 −800
(mA)
VCE (sat) (V)

−0.5
Collector current IC

−600
−0.3
Tc = 100°C Tc = 100°C 25 −25
−25
−400
−0.1

−0.05 −200
25
−0.03
−3 −10 −30 −100 −300 −1000
0
Collector current IC (mA) 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2

Base-emitter voltage VBE (V)

Safe Operating Area

−3000
IC max (pulsed)*
PC – Ta
12 1 ms*
(1) Tc = Ta Infinite heat sink IC max (continuous)
−1000 100 ms* 10 ms*
(2) No heat sink
(W)

(1)
(mA)

10
−500
PC

Collector current IC

8 −300
Collector power dissipation

DC operation
Tc = 25°C
6
−100

4 −50
*: Single nonrepetitive
−30 pulse Tc = 25°C
2 (2) Curves must be derated
linearly with increase in
temperature. VCEO max
0 −10
0 20 40 60 80 100 120 140 160 −3 −10 −30 −100 −300

Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

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RESTRICTIONS ON PRODUCT USE 030619EAA

• The information contained herein is subject to change without notice.

• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

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