LAB # 6

Title: NMOS I-V Characteristics

Group Member Names:

Submitted to:

Date:
Objective
The purpose of this lab is to study the characteristics of a n-channel Metal Oxide Semiconductor
field effect Transistor (MOSFET) in common source configuration. Also simulate and build a basic
n-MOSFET circuit and then take the measurements of the current and voltage and applying
transformation to get the MOSFET I-V characteristics curves.

Procedure
In the first step of this lab, construct the below circuit on the PSpice software and simulate it. In
that, apply the DC voltages (5Vdc) to both gate (VGS) and drain (VDS) of the MOSFET by keeping
the drain-to-source voltage (VDS) constant and varying the gate-to-source voltage (VGS) from 0V
to 5V in increment of 0.1V. You can make voltage varying by using DC sweep function in PSPICE.
After take the varying voltage of the MOSFET Drain (VDS), use current and voltage measuring
probes to measure the Drain current (IDS) and Gate voltage (VGS) of the MOSFET. plot the graph
between drain current and gate voltage to observe the I-V characteristics. By checking the
behavior of graph find the value of Gate voltage (VGS) on which the MOSFET current ON.
Similarly, in second step, Now vary the drain voltage VDS from 0V to 5V in increment of 0.1V and
using three values for Gate voltage (2.5V ,3.0V and 3.5V). Plot graph for every value of gate
voltage (VGS) and drain current (ID).
Note: The above all detail is the procedure of simulating the MOSFET circuit in PSPICE.

Figure 6.1: Circuit for MOSFET Simulation

2
Results
Simulation results:

Figure 6.2: Schematic of Figure 6.1

Plot of ID vs. VGS:

Figure 6.3: ID vs. VGS

Plot of ID vs. VDS (at 2.5VGS):

Figure 6.5: ID vs. VDS (at 2.5VGS)

3
Plot of ID vs. VDS (at 3.0VGS):

Figure 6.6: ID vs. VDS (at 3.0 VGS)

Plot of ID vs. VDS (at 3.5VGS):

figure 6.7: ID vs. VDS (at 3.5VGS)

From the above results, we see that when we draw the plot ID vs. VGS, the gate voltages are less
than the threshold voltage but the MOSFET start conducting current. As Gate-to-source Voltage
(VGS) goes increasingly, the drain current (ID) start increasing. When there is a positive potential
at VGS, a specific amount of drain current (ID) flowing from Drain to source. When this positive
potential (+VGS) is increased to further extent, the drain current (ID) increases due to the flow of
electrons from source and these are pushed further due to the voltage applied at VGS. Hence the
more positive the applied VGS, the more the value of drain current ID will be. The current flow
gets enhanced due to the increase in electron flow better than in depletion mode. you can check
this in figure 6.3 which is clearly showing that drain current is increasing by increasing the gate
current of the MOSFET.

4
Measured Results:

VA VGS VDS ID=VA-VDS/100

(V) (V) (V) (mA)

5 1 5.13 -0.0013

5 1.25 5.13 -0.0013

5 1.50 5.13 -0.0013

5 1.75 5.13 -0.0013

5 2.00 5.13 -0.0013

5 2.25 5.13 -0.0013

5 2.50 5.12 -0.0012

5 2.75 5.08 -0.0008

5 3.00 4.103 0.0037

5 3.25 4.52 0.0048

5 3.50 0.05 0.0495

5 3.75 0.03 0.0497

5 4.00 0.01 0.0499

5 4.25 0.01 0.0499

5 4.50 0.01 0.0499

5 4.75 0.01 0.0499

5 5.00 0.00 0.0500

Table 6. 1: Measure readings of VA, VDS, VGS & ID.

5
ID vs. VGS

Figure 6.8: plot of ID vs. VGS

6
For VGS = 2.5Vdc:

VA VGS VDS ID=VA-VDS/100

(V) (V) (V) (mA)

0 2.5 0 0

0.5 2.5 0.53 -0.0003

1 2.5 1.08 -0.0008

1.5 2.5 1.60 -0.001

2.0 2.5 2.18 -1.8x10-3

2.5 2.5 2.78 -2.8 x10-3

3.0 2.5 3.11 -1.1 x10-3

3.5 2.5 3.77 -2.7 x10-3

Table 6. 2 Measure readings of VA, VDS & ID (VGS=2.5v)

7
 Figure 6.9: plot of ID vs. VDS at VGS=2.5v

For VGS = 3.0Vdc:

VA VGS VDS ID=VA-VDS/100

(V) (V) (V) (mA)

0 3 0 0

0.5 3 0.04 1 x10-3

1 3 0.14 8.6 x10-3

1.5 3 0.40 0.011

2.0 3 0.83 0.0117

2.5 3 1.3 0.012

3.0 3 1.74 0.0126

8
 3.5 3 2.00 0.015

Table 6. 3 Measure readings of VA, VDS & ID (VGS=3.0v)

Figure6.10: plot of ID vs. VDS at VGS=3v

For VGS = 3.5Vdc:

VA VGS VDS ID=VA-VDS/100

(V) (V) (V) (mA)

0 3.5 0.00 0

0.5 3.5 0.01 4.9x10-3

1.0 3.5 0.03 9.7x10-3

1.5 3.5 0.04 0.0146

2.0 3.5 0.06 0.0194

2.5 3.5 0.08 0.0242

3.0 3.5 0.09 0.0291

9
 3.5 3.5 0.12 0.0338

Table 6. 4 Measure readings of VA, VDS & ID (VGS=3.5v)

Figure 6.11: plot of ID vs. VDS at VGS=3.5v

Analysis:
The n-channel depletion MOSFET transfer characteristics indicate that even when VGS is 0V, the device
has a current that flows through it. This shows that if the gate terminal of MOSFET is left unbiased the
MOSFET will conduct current. Under these circumstances, the current flowing from the MOSFET is
increase with an increase in the value of VDS (Ohmic region) till VDS becomes equal to pinch-off voltage
VP. After this the IDs become saturates and conduct whose saturation increase by increasing VGS. A
negative gate-source voltage for the n-channel depletion MOS transistor, -VGS would deplete (hence its
name) the conductive channel of its free electrons turning the transistor "OFF." Similarly, a positive gate-
source voltage for a p-channel depletion MOS transistor would deplete the channel of its free holes by
switching it "OFF." In simple words, for an n-channel MOSFET: positive gate-to-source voltages (+VGS)
means more electrons so more current will flow. While negative gate-to-source voltages (-VGS) means a
smaller number of electrons so current become less.

10
Conclusion
We have been concluded following things from this lab that the behavior of NMOS depends upon
the gate to source voltage (VGS) because the gate of the MOSFET is turned off and on by flow of
electrons. If there are more gate-to-source voltages then more electrons pushed the gate
terminal of MOSFET so drain current will increase. also, in case of NMOS the MOSFET start
conducting electric current even the gate voltages are zero but drain voltages are not zero. We
also conclude that the MOSFET drain current is increasing with the increase of gate voltages but
after some time a stage will occur where the gate voltages become decreases and become
constant even, we increase gate voltage to a large extent. we also conclude that in N-MOSFETS ,
the small value of Gate voltage (VG) is controlling a large range of drain current (ID) .we also
come to know that increase in the gate voltages helps the drain current to increase to a certain
limit and after that the drain current become reduced and attain a constant value and has no
effect by increasing the gate voltage.Also we come to know that if we add a small resistance on
the drain side than the drain voltages also reduced with time which produce opposition in the
flow of drain current.

11