APM9435

P-Channel Enhancement Mode MOSFET

Features Pin Description

• -30V/-4.6A, RDS(ON) = 52mΩ(typ.) @ VGS = -10V

S 1 8 D
RDS(ON) = 80mΩ(typ.) @ VGS = -4.5V
• Super High Density Cell Design
S 2 7 D

• Reliable and Rugged

S 3 6 D

•
G 4 5 D
SO-8 Package

SO − 8
Applications S S S

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered G

Systems

D D D D

Ordering and Marking Information P-Channel MOSFET

APM 9435 P ackage C ode

K : S O -8
H a n d lin g C o d e O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
Tem p. R ange H a n d lin g C o d e
P ackage C ode TU : Tube
TR : Tape & Reel

APM 9435 APM 9435

XXXXX X X X X X - D a te C o d e

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage -30
V
VGSS Gate-Source Voltage ±25
ID Maximum Drain Current – Continuous TA = 25°C -4.6
A
IDM Maximum Drain Current – Pulsed -20

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.4 - Mar., 2003
APM9435

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

PD Maximum Power Dissipation T A = 25°C 2.5
W
T A = 100°C 1.0
T J) T STG Maximum Operating and Storage Junction Temperature -55 to 150 °C
R θJA Thermal Resistance - Junction to Ambient 50 °C/W

Electrical Characteristics (TA = 25°C unless otherwise noted)

APM9435
Symbol Parameter Test Condition Unit
Min. Typ a. Max.
Static
BV DSS Drain-Source Breakdown Voltage V GS=0V, ID =-250µA -30 V
IDSS Zero Gate Voltage Drain Current V DS=24V, VGS =0V -1 uA
VGS(th) Gate Threshold Voltage V DS=VGS, ID=250µA -1 -3 V
IGSS Gate Leakage Current V GS=±25V, VDS =0V ±100 nA
V GS=-10V, ID =-4.6A 52 60
b
R DS(ON) Drain-Source On-state Resistance mΩ
V GS=-4.5V, ID=-2A 80 95
b
VSD Diode Forward Voltage ISD=-3A, VGS=0V -0.6 -1.3 V
Dynamica
Qg Total Gate Charge 22.5 29
V DS=-15V, VGS =-10V,
Q gs Gate-Source Charge 4.5 nC
ID=-4.6A
Q gd Gate-Drain Charge 2
td(ON) Turn-on Delay Time 8 17
tr Turn-on Rise Time V DD=-25V, R L=12.5Ω, 8 18 ns
ID=-2A , VGEN=-10V,
td(OFF) Turn-off Delay Time 35 60
R G=6Ω,
tf Turn-off Fall Time 11 28
C iss Input Capacitance 845
V GS=0V, V DS=-25V
C oss Output Capacitance 120 pF
Frequency = 1.0MHZ
C rss Reverse Transfer Capacitance 80

Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Rev. A.4 - Mar., 2003
APM9435

Typical Characteristics

Output Characteristics Transfer Characteristics

20 20
-VGS=5,6,7,8,9,10V

-V GS =4V
15 15
-ID-Drain Current (A)

-ID-Drain Current (A)

10 10

-V GS=3V TJ=25°C
5 5 TJ=-55°C
TJ=125°C

0 0
0 2 4 6 8 10 0 1 2 3 4 5
-VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current

1.50 0.16
-IDS=250µA
0.14
-VGS(th)-Threshold Voltage (V)

1.25
RDS(on)-On-Resistance (Ω)

0.12
1.00
(Normalized)

0.10 -VGS=4.5V

0.75 0.08
-V GS=10V
0.06
0.50
0.04
0.25
0.02

0.00 0.00
-50 -25 0 25 50 75 100 125 150 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0

Tj - Junction Temperature (°C) -ID - Drain Current (A)

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Rev. A.4 - Mar., 2003
APM9435

Typical Characteristics

On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature

0.30 2.00
-ID=4.6A -VGS=10V
1.75 -ID=4.6A
0.25
RDS(on)-On-Resistance (Ω)

RDS(on)-On-Resistance (Ω)
1.50
0.20

(Normalized)
1.25

0.15 1.00

0.75
0.10
0.50
0.05
0.25

0.00 0.00
1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

-VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C)

Gate Charge Capacitance

10 1200
-V DS =15V Frequency=1MHz
-IDS=4.6A
-VGS-Gate-Source Voltage (V)

1000
8 Ciss
Capacitance (pF)

800
6
600
4
400

2
200 Coss

Crss
0 0
0 5 10 15 20 25 0 5 10 15 20 25 30

QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Rev. A.4 - Mar., 2003
APM9435

Typical Characteristics

Source-Drain Diode Forward Voltage Single Pulse Power

20 80

10 70
-IS-Source Current (Α)

60

50

Power (W)
TJ=150°C TJ=25°C 40
1
30

20

10

0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 1 10 30

-VSD-Source-to-Drain Voltage (V ) Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient

1
Duty Cycle = 0.5
Thermal Impedance

D= 0.2

D= 0.1

0.1
D= 0.05

D= 0.02 1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W
3.TJM-TA=PDMZthJA
4.Surface Mounted
SINGLE PULSE

0.01
1E-4 1E-3 0.01 0.1 1 10 30
Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw

Rev. A.4 - Mar., 2003
APM9435

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

0.015X45
E H

e1 e2

A1
A 1

L
0.004max.

Mi ll im et er s Inche s
Dim
Min . Max . Min. Max .
A 1. 35 1. 75 0. 053 0. 069
A1 0. 10 0. 25 0. 004 0. 010
D 4. 80 5. 00 0. 189 0. 197
E 3. 80 4. 00 0. 150 0. 157
H 5. 80 6. 20 0. 228 0. 244
L 0. 40 1. 27 0. 016 0. 050
e1 0. 33 0. 51 0. 013 0. 020
e2 1. 27B S C 0. 50B S C
φ 1 8° 8°

Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw

Rev. A.4 - Mar., 2003
APM9435

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

temperature

Peak temperature

183°C
Pre-heat temperature

Time

Classification Reflow Profiles

Convection or IR/ VPR

Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C) 120 seconds max
Temperature maintained above 183°C 60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds
Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature 6 minutes max.

Package Reflow Conditions

pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Rev. A.4 - Mar., 2003
APM9435

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions t

Po P D
E
P1

F Bo
W

Ao D1 Ko

T2

J
C
A B

T1

Application A B C J T1 T2 W P E
330 ± 1 62 +1.5 12.75+ 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
0.15
SOP- 8 F D D1 Po P1 Ao Bo Ko t
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Rev. A.4 - Mar., 2003
APM9435

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8 12 9.3 2500

Customer Service

Anpec Electronics Corp.

Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw

Rev. A.4 - Mar., 2003