Course Code Course Title L T P J C

ECE1002 SEMICONDUCTOR DEVICES AND CIRCUITS 3 0 2 0 4

Prerequisite: None

Course Objectives:
 To give the students a solid background of solid state devices.
 To apply that knowledge to understand and develop simple electronic circuits.
 To design amplifiers under different configurations and study their parameters
 To study the devices under low frequency for small signals
 To simulate the above using soft tools and compare their output with hard-wired circuitry

Expected Course Outcome:

The students will be able to
1. Demystify Electronics.
2. Gain introduction about the semiconductor fundamentals in device perspective.
3. Analyze diode circuits to understand the behavior of Diodes.
4. Understand the applications of diodes in various electronic devices.
5. To understand the physical operation and device perspective of three terminal devices.
6. Analysis of the three terminal devices in circuit perspective.
7. Implementation of logic using semiconductor devices.

Student Learning Outcomes (SLO): 1,6,14

Module:1 Semiconductor Fundamentals: 8 hours CO: 1

Formation of energy bands, Fermi level, energy- band models, direct and indirect band gap,
electrons and holes, doping, intrinsic and extrinsic semiconductors, elemental and compound
semiconductor, generation, recombination and injection of carriers, Drift and Diffusion of
carriers, basic governing equations in semiconductors , Transport Equations

Module:2 PN Junction diodes: 6 hours CO: 2

PN Junctions, Formation of Junction, Physical operation of diode, Contact potential and Space
Charge phenomena, I - V Characteristics, Zener diode, Physical operation of special diodes
(Tunnel diode, LED, OLED, Varactor diode and Photo Diode).

Module:3 Diode Circuits: 3 hours CO: 2

DC Analysis – Small Signals and Large signal models of PN junction diode and AC equivalent
circuit.

Module:4 Diode Applications: 4 hours CO: 3

Rectifier circuits, Clipper and Clamper circuits, Photodiode and LED circuits.

Module:5 Transistors- Device Perspective: 8 hours CO: 4

Bipolar Junction Transistor: Device structure and physical operation, current – voltage
characteristics.
Field Effect Transistor (FET): MOS Capacitor: Device Structure and mode of operation, C- V
Characteristics, Threshold Voltage.

Module:6 Transistors- Circuits Perspective: 8 hours CO: 5

Bipolar Junction Transistor: DC Analysis of BJT Circuits, CB, CE and CC Configuration,
Biasing BJT Circuits, Switch.
Field Effect Transistor (FET): DC Analysis of MOSFET Circuits, biasing circuits.

Module:7 Applications of MOSFETs: 6 hours CO: 6

CMOS device structure, characteristics, gates and inverters. MOSFET CS, CG and Source
Follower Circuits.

Module:8 Contemporary Issues 2 hours

Total Lecture Hours: 45 hours

Text Books:
1. Adel S. Sedra, Kenneth C. Smith & Arun N. Chandorkar, “Microelectronic Theory and
Applications”, 2013, 5th edition, Reprint, Oxford University press, New York, USA.
2. B G.Streetman and S.Banerjee, “Solid State Electronic Education, 2015, 7th edition, New
delhi, India.
Reference Books:
1. Jacob Millman, Christos C Halkias and Satyabrata Jit, “Electronic devices and circuits”,
2015, 4th edition, Tata Mc Graw Hill, New delhi, India.
Mode of Evaluation: Continuous Assessment Test –I (CAT-I), Continuous Assessment Test –II
(CAT-II), Digital Assignments/ Quiz / Completion of MOOC, Final Assessment Test (FAT).

Sl.No. List of Challenging Experiments (Indicative): CO: 7

1 Design a circuit to measure the cut-in and reverse breakdown voltages of 2 hours
a diode.
2 Design a circuit to measure the cut-in and regulation region voltages of a 2 hours
Zener diode.
3 Construct a circuit to convert alternating voltage into unidirectional 2 hours
pulsating voltage using an uncontrolled single device diode.
4 Construct a circuit to convert alternating voltage into unidirectional 4 hours
voltage using an uncontrolled two diodes. Also apply the capacitor filter
to obtain the smoothened DC voltage.
5 Construct a circuit to perform controlled clipping of positive half-cycle / 2 hours
negative half-cycle.
6 Construct a circuit to perform controlled level shifting of positive half- 2 hours
cycle / negative half-cycle.
7 Design a circuit to measure the operating regions of LED and Photodiode. 2 hours
8 Construct a circuit to measure and plot the input / output characteristics of 4 hours
a transistor for calculating h-parameters under CB / CE / CE
configurations.
9 Design a circuit to measure and plot the DC and AC Load-Line Analysis 2 hours
of a Transistor.
 10 Construct a circuit to amplify the low level signal using a Transistor as an 2 hours
Amplifier under CE configuration.
11 Design a circuit to measure and plot the drain and transfer characteristics 2 hours
of a FET.
12 Design a circuit to realize logic Gates using CMOS. 4 hours
Total Laboratory Hours: 30 hours
Mode of Evaluation: Continuous Assessment of Challenging experiments / Final Assessment Test
(FAT).

Module CO SLO
1 CO_01 1
2 CO_02 1
3 CO_02 6
4 CO_03 6
5 CO_04 6
6 CO_05 6
7 CO_06 6
Lab CO_7 14