P-N JUNCTION DIODE

Aim:

To draw I-V characteristics of p-n junction in forward bias and reverse bias.

Apparatus required:

A p-n junction semiconductor diode, a 3 volt battery, a mille ammeter, A ammeter, connecting
wires a 50 volt battery ,high resistance rheostat one 0-3 voltmeter, one 0-50 voltmeter, one 0-100
Ma ammeter, one 0-100 µA ammeter, one way key, wires and sand paper.

Theory:

i. Forward Bias Characteristics.

When P section of the diode is connected to positive of battery and N section to negative
terminal of the battery, p-n junction is said to be forward biased. With increase in bias
voltage, the forward current increases slowly in beginning and rapidly at about 0.7 V for Si
diode (0.2 for Ge) the current increases suddenly. The value of forward bias voltage , at
which forward current increases rapidly, is called cut in voltage (or) threshold voltage.

(B)Reverse Bias Characteristics.

When P section of the diode is connected to negative of battery and N section to

positive terminal of the battery, p-n junction is said to be reverse biased.
When reverse bias voltage increases, initially there is very small reverse bias voltage
increases to sufficiently high value, reverse current suddenly increases to large value. This
voltage at which breakdown of junction diode occurs is called zener breakdown voltage (or)
increase voltage. The breakdown voltage may start from one volt to several hundred volts,
depending upon dopant density and depletion.
Procedure:

(A) Forward biasing

i. Make circuit diagram as shown.
ii. Make all connections neat, clean, light.
iii. Note least count/zero error of voltmeter/milliammeter.
iv. Bring moving contact of potential divider (rheostat) near negative end and insert key
K.Voltmeter V and milli-ammeter A will give zero reading.
v. Prove the contact a little towards positive end to apply forward bias volt(Vf) of 0.1v current is 0.
vi. Increase the forward bias voltage up to 0.3v for Ge diode current remains zero.
vii. Increase Vf to 0.4V milliammeter records a current.
viii. Increase Vf in steps of 0.2 V and note the corresponding current .Current increases first
slowly and rapidly. Till Vf becomes 0.7 V.
 ix. Make Vf =0.72 V the current increases suddenly. this represents “forward breakdown
stage” stage.
x. If Vf increases beyond “forward breakdown” stage. The forward current does not change
much. Now take out key at once.

(B) For Reverse Bias

i. Make circuit diagram as shown.

ii. Make all connections neat, clean and tight.
iii. Note least count/zero error of voltmeter and multi-ammeter.
iv. Bring moving contact of potential divider near positive end and insert key
K.Voltmeter/milli ammeter will give zero reading
v. Move contact towards negative end to apply a reverse-bias voltage (Vr ) of 0.5V, a feebly
reverse current starts flowing.
vi. Increase Vr in steps of 0.2V.current increases first slowly and then rapidly till Ve becomes
20V.Note the current.
vii. Make Vr =25. The current increases suddenly. This represents “reverse breakdown stage”.
Note the current and take out the key at once.
viii. Record your observation.

Model Graph:

Forward and Reverse biasing:

Forward biasing Reverse biasing

S.No.
I (mA) V(volts) I (µ A) V(volts)
1.

2.

3.

4.

5.
Circuit Diagram:

Forward biasing Reverse biasing

Result:

V-I characteristics curve of p-n junction diode in forward and reverse bias are drawn and the cut
in or threshold voltage of the given p-n junction diode is ________________V.

Precautions:

1. All connections should be neat clean and tight.

2. Key should be used in circuit and opened when circuit is not being used.
3. Forward bias voltage beyond breakdown should not be applied.
4. Reverse bias voltage is greater than break down voltage should not be applied.

Sources of error:

1. The junction diode supplied may be faulty.

2. Polarity on diodes may be wrong.