SWARNANDHRA COLLEGE OF ENGINEERING & TECHNOLOGY

[AUTONOMOUS]
Seetharampuram, NARSAPUR-534 280
DEPARTMENT OF ____________________________________________________
CYCLE - I

Course/Sem: B.Tech-VI Semester Branch: ECE Date:

Time: Subject: BVLSI &SD Max. Marks: 30
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Answer ALL questions. (3 X 10 = 30Marks)
SET1
Knowledge Course
Q.No Question Marks
Level Out Come

1a Define IC and Explain in detail about IC technology K1 CO1 5

1b Distinguish between CMOS and Bi-polar devices. K2 CO1 5
Describe any CMOS fabrication process with the help of neat CO2
2 K2 10
diagram.
Solve the expression for MOS transistor Trans-conductance (gm) CO1
3a K3 5
and output Trans-conductance (gds)
Explain briefly about NMOS inverter operation with neat v CO2
3b K1 5
diagram

NOTE:K1- Remember,K2- Understand,K3- Apply,K4- Analyze

SET2

Knowledge Course
Q.No Question Marks
Level Out Come

Sketch and discuss the operation of Enhancement mode NMOS CO1

1 K3 10
transistor
2 Describe Berkeley P-well CMOS fabrication process. K2 CO1 10
the following
Illustrate CO2
3 K2 10
a) Figure of merit b) Body effect
NOTE:K1- Remember,K2- Understand,K3- Apply,K4- Analyze
SET3
Knowledge Course
Q.No Question Marks
Level Out Come

1a Define IC and Explain in detail about IC technology K1 CO1 5

CO1
1b Distinguish between CMOS and Bi-polar devices. K2 5
Explain the fabrication process of NMOS transistor with neat CO1
2 Diagrams. K3 10

Solve the relation between Ids and Vds for the following regions CO2
3 K3 10
i) Non-saturated region ii) Saturated region

NOTE:K1- Remember,K2- Understand,K3- Apply,K4- Analyze