Naina Semiconductor

emiconductor Ltd. 1N4007

General Purpose Rectifier

Rectifier, 1.0A
Features
• Diffused junction
• High efficiency
• Low forward voltage drop
• Low power loss
• High surge current capability

Mechanical Characteristics
• Case: Molded Plastic
• Cathode indicated by Polarity band
• Mounting position: Any
• Terminals: Finish Tin plated,, Solderable per
DO
O-41
MIL-STD-202, Method 208
• Weight: 0.33 grams (approx.)

Maximum Ratings (TA = 250C unless otherwise specified

specified)
Parameter Symbol MUR420 Units
Maximum repetitive peak reverse voltage VRRM 1000 V
Maximum RMS voltage VRMS 700 V
Maximum DC blocking voltage VDC 1000 V
Maximum average forward output current @ TA = 500C IF(AV) 1.0 A
Peak forward surge current (8.3ms)
ms) single half sine
sine-wave
IFSM 30 A
superimposed on rated load

Electrical Characteristics (TA = 250C unless otherwise specified)

Parameters Symbol MUR420 Units
Maximum DC forward voltage drop @ 1.0A
A DC VF 1.0 V
Maximum DC reverse current @ rated DC blocking TA = 250C 5.0
IR µA
voltage TA = 1000C 50
Rating for fusing (t < 8.3ms) I2t 3.7 A2sec

Thermal and Mechanical Specifications (TA = 250C unless otherwise specified)

Parameters Symbol Values Units
0
Typical thermal resistance, junction to ambient RθJA 75 C/W
0
Operating and Storage temperature range TJ , TStg - 65
6 to + 150 C

1 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450

4205450 • Fax: 0120-4273653
0120
sales@nainasemi.com • www.nainasemi.com
 Naina Semiconductor
emiconductor Ltd. 1N4007

Dimensions in inches and (millimeters)

2 D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450

4205450 • Fax: 0120-4273653
0120
sales@nainasemi.com • www.nainasemi.com