Collector cleaning by surface wave plasma in the Illinois NXE:3100 chamber

G.Panici, D.Qerimi, D.N. Ruzic

Contact email: panici1@illinois.edu

Abstract Previous Etch Rate Results2

A hydrogen plasma cleaning technique to clean Sn (tin) off EUV collector optics is
studied in detail. The cleaning process uses hydrogen radicals and ions (formed in the • Etch rates were determined by
hydrogen plasma) to interact with Sn-coated surfaces, forming SnH4 and being pumped using profilometry. Thickness of the
away. This technique has been used to clean a 300mm-diameter stainless steel deposited and etched films were
dummy collector optic, and EUV reflectivity of multilayer mirror samples was restored measured, subtracted and divided
after cleaning Sn from them, validating the potential of this technology. by known etch duration.
This method has the potential to significantly reduce downtime and increase source
• Etch rates increased when the
availability as it occurs in-situ. While previous experiments have been conducted using
an RF capacitively coupled plasma, a microwave-generated surface wave plasma
samples were placed closer to the
(SWP) is advantageous due to its high density, low electron temperature, and ability to antenna. As the radius distance
be generated locally where etching is needed. Langmuir probe measurements of the increased, etch rates decreased.
surface wave plasma show electron temperatures of 1 to 5 eV and plasma densities on
the order of 1011-12 cm-3. • @ 250mT, highest etch rate is
observed. There is a trade-off
Previous experiments have shown etch rates of greater than 10 nm/min over a 2 inch between ion flux and ion energy
diameter circular plasma area with an unoptimized SWP launcher. Peak etch rates of Etch rate scales with ion energy reaching the surface as pressure
94.9 nm/min were measured in the immediate vicinity of the plasma source. A custom flux, suggesting a Reactive Ion varies and this mechanism results
launcher was designed for the 3100 collector and tested in the NXE:3100 chamber at Etching-limited regime. 3 in the etch rate peak at intermediate
Illinois at standard operating conditions. Preliminary results will be presented. pressures

Experimental Setup for NXE:3100 Collector and Mock Collector Results at Cymer on NXE:3100 Collector

• Early proof-of-concept
tests done at Cymer
• Surface wave plasma
etches even on very dirty
collector

15°
Sn coated 30°
coupons

Front View
Feed power in from front
to couple to ceramic
“cone” proxy on Al plate

Illinois Tin Removal Experiment (TREX)

Pressure Power
Plasma similar to 60W CW Plasma almost all the way around
• Plasma extends around the ring even at 4 Torr.
• 400 mTorr results in significantly larger radial
expansion.
• This radial expansion is necessary for the levels of
radical production necessary to etch along the
whole of the collector.
• Flows of 20 SLM were used in the pictures to the
left with no change to plasma.
• While plasma generation is not affected by flow,
4 Torr H2, 100 W, Front view radical distribution in the chamber is. Flow is
another dial to be tuned in the future. PULSED, 15W Time Average CW, 130W, 1.1 Torr H2
CW, 60W, 1.1 Torr H2 150W peak, 10% DF, 10 kHz

0.4 Torr H2 Preliminary Etch Data

Radial Distance Etch Rate [nm/min] Comments
2 in
1 in >16.67 All Etched
2 in >16.67 All Etched
3 in 4.1 ±3.62

0.4 Torr H2, 100 W, Front and side view

Conclusions Next Step References

• Implementing surface wave plasma cleaning will significantly reduce “hazy”
contamination on collector surface
• Surface wave cleaning works on actual collector at Cymer, not just at Illinois
• Pressure is not only important for higher etch rates, it is also a factor in the
radial coverage
• Scaling power should increase etch rates outside of the visible plasma,
leading to further radial cleaning
• Embed multiple SWP launchers into existing cone in order to
put more power into the plasma.
• Because of the dielectric coating on the cone, this enables the
surface wave to propagate onto the collector.
• Goal is to minimize footprint while extending plasma over the
collector, particularly the high reflectivity region near the cone.
Collector Front View Cone Side View
1. Elg, D.T., et al., "In-Situ Collector Cleaning and EUV Reflectivity
Restoration by Hydrogen Plasma for EUV Sources", Journal of
Vacuum Science & Technology A 34(2) 021305 (2016).
2. G. Panici, D. Qerimi, D. N. Ruzic, “Study of Sn Removal by Surface
Wave Plasma for source cleaning”, Proceedings of SPIE 10143
(2017).
3. D.Elg. “Removal of Tin from Extreme Ultraviolet Collector Optics by
an In-Situ Hydrogen Plasma.” Doctoral dissertation. University of
Illinois Urbana-Champaign. 2016.

Future Work Acknowledgements

• Work with Starfire Industries to develop next evolution of SWP cone • SWP source developed in conjunction with Starfire Industries,
design, shown to the right LLC.
• Explore additional ways to incorporate higher power (more launchers,
different antenna design, larger capacity power supply) Plasma
Cone Antenna
• Mount collector in Illinois chamber to perform experiments in more
applicable geometry and conditions. Note: Antenna and cone will be covered in plasma as it
propagates onto the collector. Plasma not shown for
Contact email: panici1@illinois.edu clarity.