29th European Photovoltaic Solar Energy Conference and Exhibition

ANALYSIS BASED ON I-V CURVE CHANGES OF ORGANIC PHOTOVOLTAIC MINI-MODULES

SUBJECTED TO DEGRADATION UNDER DIFFERENT TEMPERATURE AND HUMIDITY CONDITIONS

Alberto Pozza*, Giorgio Bardizza, Tony Sample and Ewan Dunlop

European Commission, DG JRC, Institute for Energy and Transport, Renewables and Energy Efficiency Unit,
Via Fermi 2749, 21027 Ispra (VA),Italy
*Tel: +39 0332789190, Fax: +39 0332789268, e-mail: alberto.pozza@jrc.ec.europa.eu

ABSTRACT: Organic photovoltaic (OPV) devices represent a promising technology thanks to the improvements that
have been achieved in recent years, peaking beyond 10% power conversion efficiency (PCE) and to the potentially
high throughput and low cost production by using roll-to-roll printing techniques. Besides the improvements in
conversion efficiency, it is fundamental to increase their lifetime in order for them to be commercially attractive. In
order to study the stability of OPV devices, a round robin was organized in the framework of the SOPHIA project
among several European research centres, for the characterization after exposure at different temperature and
humidity conditions. While the purpose of the overall activity was to compare the results obtained by different
partners, in this work we present an analysis based on the measurements performed at the European Solar Test
Installation (ESTI) focusing on the degradation of electrical parameters (I sc, Voc, FF, Pmax) and on series and shunt
resistances (Rs and Rsh) obtained by fitting IV curves with one and three diode models.
Keywords: accelerated ageing, OPV, organic photovoltaics, degradation, series resistance, shunt resistance.

1 INTRODUCTION
In recent years strong interest has risen for the
development of Organic Photovoltaic Devices (OPV) due
to their potentially low production costs and high
throughputs. Efficiencies reaching 12% have been
demonstrated [1] and tests on outdoor stability have been
performed, showing promising results of devices being
stable after one year of outdoor exposure [2, 3, 4].
However, for these technologies to be
commercialized, more effort is needed to develop a cheap
and stable production process and to ensure that devices
can withstand prolonged operation without significant
degradation of their electrical characteristics. In the
framework of the European project SOPHIA, several
tests have been performed at different European research
institutes, regarding the electrical characterization and
stability of OPV. A Round Robin for the electrical
characterization involving several institutes resulted in
drafting a series of recommendations and best practices
for measurements [5].
A stability test based on the procedures contained in
the guidelines of the International Summit on OPV
Stability (ISOS) was performed at several institutes
participating in the SOPHIA project. The aim of this
study was to perform an intercomparison of ageing tests
and to assess the reproducibility of the results.
each cell having an active area of 8 cm2 (see Figure 1).
The mini modules were produced by the Technical
University of Denmark with a roll-to-roll coating
technique following the freeOPV design [6]. The
structure of the cell is shown in Figure 1 with a picture of
one mini-module. The cells had an active layer based on
P3HT:PCBM coated between a transparent electrode
(Flextrode*) and a PEDOT:PSS intermediate layer. The
back electrode consisted of a silver grid printed with a
roll-to-roll machine and the encapsulation was performed
using a flexible barrier material from Alcan. The devices
were mounted on a rigid plexiglass substrate. The set of
samples used for this test consisted in a number of
devices that came from the same production batch.
Processing the devices with an automated roll-to-roll
technique led to a high uniformity in the performances of
the devices. The average photon conversion efficiency of
the devices measured by DTU prior shipment was 1.74%
with an absolute standard deviation of 0.06%.
Substrate
Front electrode Flextrode *
Intermidiate layer
Active layer P3HT:PCBM
Intermidiate layer PEDOT:PSS
Back electrode Ag grid

While the results of these SOPHIA tests are being Flexible plastic foil
Encapsulation
from Alcan
used to compare the ageing and electrical performances
obtained at different institutes to assess their uniformity,
in this work we analyze the IV curves measured for
devices aged at different conditions, according to ISOS
Figure 1: picture of one OPV mini module used for the
stability tests procedures. In particular we analyze the ISOS ageing test and schematic of the cell structure.
change of electrical parameters and we fit the IV curves
with different electrical models (one-diode and three-
diode models) to extract parameters such as series
3 TEST CONDITIONS
resistance (Rs) and shunt resistance (Rsh) to study how
they change during ageing. 3.1 Electrical characterization
A testing protocol was written by the organizers of
the campaign and distributed within the participants. A
2 CHARACTERISTICS OF THE DEVICES detailed procedure for electrical characterization of the
devices was required in order to get reliable results.
The devices used for this study consist of a set of 6
Particular attention was given to the light soaking step
OPV mini modules having 8 cells connected in series,

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preceding the IV characterization (pre-conditioning), as
requested by the test protocol. The protocol outlined a 5
minutes light soaking under a solar simulator with
spectrum AM1.5G and an intensity of 1000 W/m2. After
this step 3 I-V curves had to be taken and their
characteristics had to be within 10 % variation.
Additional light soaking was suggested if the devices did
not reach stabilization.
In the measurements performed at ESTI we noticed
that the duration of the pre-conditioning step to obtain
stable conditions varied, based on the history of the
sample such as the ageing time and conditions. The light
soaking was performed with the device kept in open
circuit condition, at 25°C controlled by the Peltier cooler
and illuminated with the same solar simulator used for IV
characterization at 1000W/m2. At the beginning of the
ageing tests (described in more detail in section 4) a light
soaking of 5 minutes was found to be sufficient to
stabilize the devices (see Figure 2a: Pmax calculated from
the 5 I-V curves performed after pre-conditioning
exhibited a ±0.2% variation). In later stages of the ageing
tests, when the devices had been exposed to a period of
ageing, a longer light soaking step was needed to ensure
acceptable results as required in the protocol. Up to 20
minutes of light soaking were performed for devices kept
at high RH conditions, as shown in Figure 2b. This can
be due to the presence of humidity in the active area of
the device.
Figure 2: effects of light soaking for two devices at the
beginning of the test and after several days of test, one
subjected to dry-heat ageing ISOS-D2 (inset a), the other
to damp-heat ISOS-D3 (inset b).
The samples were characterized using a Wacom
steady state solar simulator WXS 140 super by IV curve
measurements at standard test conditions (STC)
following the IEC 60904-1 [7]. The samples were placed
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on a metallic plate equipped with a Peltier cooler in order
to keep the temperature at 25°C during the IV sweep, the
temperature being monitored by a PT100 placed on the
rear of the device.
3.2 Test conditions
The devices were exposed to three different test
conditions accordingly to ISOS guidelines. The
conditions are reported in Table I.
ISOS-D1 storage was achieved by keeping the
devices in the dark, in the laboratory where temperature
and humidity were monitored and during the test period
were in the range of 23.1°C – 23.7°C for temperature and
46% - 57% for RH. The devices for storage condition
ISOS-D2 was kept in an oven set at 65°C ±2°C, without
humidity control, with the temperature monitored with a
PT100 placed near the device. ISOS-D3 conditions were
obtained by placing the devices into a climatic chamber
with temperature and relative humidity control (65°C
±2°C, 85% ±5% R.H.).
Table I: ISOS test conditions used for the storage of
devices
TEST ID ISOS-D1 ISOS-D2 ISOS-D3
TEMPERATURE [°C] AMBIENT 65 65
HUMIDITY [% R.H.] AMBIENT LOW 85
I-V curves were measured at specified intervals. In
the initial phase of the ageing test, electrical
characterization was performed every day, during later
stages of the test, IV curves were measured once per
week.
According to the protocol, the test was to be
continued until the Pmax of the device degraded more than
90% of its initial value or for a maximum period of 3
months. For comparison and statistics 1 device was kept
in ISOS-D1, 2 devices in ISOS-D2 and 2 devices in
ISOS-D3. Ageing and I-V measurements were performed
in the same days and following the same procedure for all
of them. An additional device kept in the dark in
laboratory conditions and never measured was used to
estimate the effect of handling and measuring on the
natural ageing. All the devices were sent back to the
SOPHIA organizers at the end of the study for a final
characterization.
4 RESULTS
4.1 I-V curve analysis
Firstly we analyzed the I-V curves measured during
the ageing tests following the procedure described in
section 3 in order to detect trends on the modification of
their shape. One representative I-V curve for each
measurement day (from the 3 measured curves) was
plotted in the graphs of figures 3a (device ISOS-D1), 3b
(device ISOS-D2) and 3c (device ISOS-D3). For each
device, all the curves measured from day 0 (day when the
test started) until the last day of the test, are reported.
For clarity, only one of the devices kept in ISOS-D2
and ISOS-D3 is shown in Figure 3. However, the two
devices kept in the same conditions reported almost
identical behaviour. This is observable in Figure 4 where
the evolution of the electrical parameters (Isc, Voc, FF and
Pmax) for all the devices kept in different ISOS conditions
 29th European Photovoltaic Solar Energy Conference and Exhibition
is presented. Each point in the figures represents the
average of the values extracted from the 3 measured I-V
curves. Here the results of all devices are shown and the
agreement of the devices kept in the same ageing
condition is noticeable.
Figure 3a: IV curves of the device subjected to ISOS-D1
conditions (laboratory conditions).
Figure 3b: IV curves of one device subjected to ISOS-
D2 conditions (dry-heat chamber).
Storing the device in ISOS-D1 for 100 days resulted
in measurements following a clear evolution: the Voc and
FF of the I-V curves remained very stable and the Isc
decreased by about 12% in 100 days. P max decreased by
approximately the same amount due to Isc reduction. The
two devices kept in ISOS-D2 reported a less regular
evolution, compared with ISOS-D1.
The measured I-V curve of these devices showed a
small reduction in Voc together with a clear improvement
of Isc during the first 30 days. After this period Isc went
back to its initial values and Voc remained stable. The FF
remained almost constant and consequently P max
followed the trend of Isc. Comparing the measurements
performed in day 0 and day 94, it is possible to conclude
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that the electrical performances of these devices (both of
them) remained particularly stable after 100 days of
ISOS-D2 condition (Pmax decreased 1.5% in one device
and increased 0.4% in the other).
Figure 3c: IV curves of one device subjected to ISOS-D3
conditions (damp-heat chamber).
As expected the devices stored under ISOS-D3
condition showed a fast decrease of all electrical
parameters. After only three days of exposure their
corresponding I-V curves start showing the typical "s"
shape previously reported in several works in the
literature [8, 9, 10], which is better analyzed and
discussed in the next section. It is important to notice that
the shape of I-V curves after day 3, even if measured,
was not characteristic of a PV device, but more
representative of an ohmic resistance. However, it is
possible to conclude that after 9 days of exposure under
ISOS-D3 conditions, both devices reported a P max
reduced to almost 10% of their initial values. The trend of
the electrical parameters evolution during ISOS-D3
ageing reported in Figure 4 is very clear and all the
parameters (Isc, Voc and FF) contributed to the reduction
of Pmax.
4.2 IV curves fitting
Considering the large amount of data available from
this study and the clear evolution of the I-V curves during
ageing described in the previous section, a better
understanding of the ageing processes taking place in the
different layers of the devices under test could be found
with a more complex analysis of the I-V curves.
4.2.1 1-diode model
At first the standard 1-diode model was used to
simulate the electrical behavior of the fresh devices. A
fitting process was performed using a Matlab script with
the Newton-Raphson method. The measured I-V data of
the different devices were fitted with this model using the
following fit parameters: the ideality factor n and the dark
saturation current Iot of the diode, the series resistance Rs,
the shunt resistance Rsh and the Voc. The 1-diode model
used for the fitting is reported in Figure 5 together with
an example of measured I-V curve and relative fitted
 29th European Photovoltaic Solar Energy Conference and Exhibition

Figure 4: Trends of electrical parameters for all devices kept in different ISOS conditions.

curve. In Figure 5 an example of the parameters
calculated from the fit is shown and the relative 95%
confidence bounds calculated using Matlab is specified.
In Table II and Figure 6 the Rs and Rsh values
extracted from the fit for the device kept in ISOS-D1 are
presented. The values of both resistances remained
almost constant during the considered ageing period. The
small variations noticeable in the table and plot agree
with the change of Isc (Rsh) and Pmax (Rs) already
discussed. The high R2 values resulting from the fit and
the goodness of the fitted curves (not reported here)
confirmed the that a good fit could be found with this
model.

Table II: evolution of Rs and Rsh values for the device

kept under ISOS-D1 conditions. The values are from the
fit with 1-diode model. The R2 values representing the
goodness of the fit are reported in the last column.

Ageing days Pmax (mW) Rs [ohm] Rsh [ohm] R2

0 93.61 14.8 554.7 0.9997

27 88.70 15.3 536.3 0.9998
35 87.14 16.0 530.5 0.9998
42 86.37 15.3 528.4 0.9997
48 85.50 15.1 518.4 0.9997
62 86.74 16.9 494.2 0.9997
100 87.50 17.8 550.8 0.9998

Figure 5: 1-diode model used to fit I-V curves that did

not present "s" shape: schematic of the model circuit and
example of fitting a measured data set with this model.
The parameters coming from the fit are indicated in the
inset together with the relative 95% confidence bounds
calculated using Matlab.

The fitting process was applied to the measured I-V

curves of devices kept in ISOS-D1 and to one of the
devices kept in ISOS-D2. The main aim was to extract
from the fit Rs and Rsh values and study their evolution at Figure 6: Plot of Rs and Rsh evolution for the device kept
different stage of the ageing. under ISOS-D1 conditions.

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The behavior of Rs suggests that there is a constant small those days. This resulted also in low R2 values as
increase of the resistivity of one of the layers in the cells expected.
or in the contacts. This device was kept in a controlled
ambient in the laboratory, where about 50% relative
humidity was present. Thus the moisture ingress in the
device could be the main cause of Rs degradation.

In Table III and Figure 7 the Rs and Rsh values

extracted from the fit for one of the devices kept under
ISOS-D2 conditions are presented. Rs remained almost
constant during the ageing period. However, Rsh
constantly increased during the test resulting at the end in
a 20% higher value than original. This behavior is
reflected in the Isc of this device which follows the same
trend of Rsh.

Table III: evolution of Rs and Rsh values for one of the

devices kept under ISOS-D2 conditions. The values are
from the fit with 1-diode model. The R2 values
representing the goodness of the fit are reported in the
last column.

Ageing days Pmax Rs [ohm] Rsh [ohm] R2

0 99.08 11.6 495.5 0.9996

Figure 8: Measured I-V curves of one of the devices kept
3 101.30 13.8 541.0 0.9994
9 104.09 18.7 520.9 0.9993
under ISOS-D3 conditions (blue circles) and fitted curve
16 105.28 14.3 548.1 0.9994 performed with 1-diode model (red line). The green line
29 101.52 13.6 605.8 0.9994 represents the calculated data from the fit.
38 109.95 12.7 623.7 0.9995
57 104.58 13.9 597.9 0.9993
71 107.92 13.2 645.4 0.9994
4.2.2 Back-to-back 3-diode model
86 108.85 14.7 640.3 0.9993
100 106.15 14.3 639.6 0.9994
Some models have been proposed in literature to fit I-
V curves exhibiting a kink, therefore giving the I-V curve
the typical s-shape [11, 12, 13, 14]. In this work the 3-
diode model in a back-to-back configuration proposed by
Sesa [14] was used. The circuit shown in Figure 9
consists of the one diode model with the addition of two
diodes placed in a back-to-back configuration. This new
part of the circuit is used to model the s-shape behavior.
Additionally, a resistance in parallel with the two diodes
and a voltage generator are added in order to be able to fit
the curve in the 1st quadrant.

Figure 7: Plot of Rs and Rsh evolution for one of the

devices kept under ISOS-D2 conditions.

This analysis suggests that the device kept under

ISOS-D2 conditions improved its performances during
the test and this can be attributed to the dry condition of
storage which avoided the ingress of water into the
device. The degradation mechanism for this device is
Figure 9: 3-diode model in back-to-back configuration
likely to be different than for the device kept in ISOS-D1
used for the fit of IV curves presenting the "s-shape" by
and this is probably related to the different relative
Sesa [14].
humidity level of ISOS-D1 and ISOS-D2 conditions.
The same fitting procedure used with the 1-diode
Applying the 1-diode model to fit the IV curves of
model was used with this more complex 3-diode model.
the device kept under ISOS-D3 conditions was
The measured data together with the fitted curves are
acceptable only for day 0 and day 1 of the ageing when
reported in Figure 10.
the measured I-V curve had a standard diode-like shape
(see Figure 8). A tentative fit using the same model to the
curves of day 2 and day 3 is reported in Figure 8 and
clearly it cannot correctly fit the s-shape characteristic of

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cause of the increase of Rs described by the fitting tool.

However it is more complex to explain the rapid variation
of Rsh, which is usually related to the recombination
current at the interface.

5 CONCLUSIONS

Testing of OPV devices under three different ISOS

conditions gave important results on the degradation rates
of electrical parameters. As was to be expected, the
Figure 10: measured data of one device kept under devices exposed under high temperature and high
ISOS-D3 conditions for 2 and 3 days together with the humidity conditions exhibited a fast degradation with
relative fitted curve performed with the 3-diode model in Pmax decreasing more than 60% from its initial value after
a back-to-back configuration. only 3 days. This can probably be attributed to moisture
ingress causing increase of resistivity of the PEDOT:PSS
It is here noticeable that the fit well describes the s- layer itself and at the various interfaces. The devices
shaped curve except for the points close to Voc where subjected to ISOS-D1 and ISOS-D2 conditions showed a
some improvement is needed. The values of Rs and Rsh much lower degradation. It is interesting to notice that the
relatively to the device aged under ISOS-D3 conditions devices kept in ISOS-D2 condition (dry-heat chamber)
were then extracted from the 1-diode model for day 0 and resulted in improved performances in the initial part of
day 1, while the 3-diode model was used for day 2 and the test. This suggested that the degradation mechanism
day 3. These are reported in Table IV and plotted in in the two cases was different and probably strongly
Figure 11. related to the humidity level.
Two models were used to fit the IV curves measured
Table IV: evolution of Rs and Rsh values for one of the on these devices and to extract parameters such as Rs and
devices kept under ISOS-D3 conditions. The values are Rsh. Results showed the standard 1-diode model well
from the fit with the 1-diode model for day 0 and day 1 described the I-V curves of devices kept in ISOS-D1 and
and from the 3-diode model for day 2 and day 3. The R2 ISOS-D2 at all exposure times. However, for devices
values representing the goodness of the fit are reported in kept under ISOS-D3 which exhibited a large degradation
the last column. during exposure, a modified model with two diodes in
back-to-back configuration had to be used. In all cases a
Ageing days FIT Pmax Rs [ohm] Rsh [ohm] R
2 good fit could be reached and results show a clear trend
of Rs and Rsh in agreement with the measured P max
0 1 diode 101.32 10.9 497.7 0.9996
variation. A complete explanation of the phenomena
1 1 diode 85.88 32.5 496.0 0.9998
2 3 diode 59.90 120.0 170.0 0.9995
taking place in the devices under test during ageing was
3 3 diode 34.80 176.0 157.0 0.9998 out of the scope of this paper. However, looking at the
evolution of Pmax, Rs and Rsh during exposure made it
possible to gain useful information to this ageing study.

ACKNOWLEDGEMENT

We gratefully acknowledge S. A. Gevorgyan and F.

Krebs from DTU for providing the devices to age.
This work has been supported by European Research
Infrastructure SOPHIA.

REFERENCES

Figure 11: Plot of Rs and Rsh evolution for one of the
devices kept under ISOS-D3 conditions.
As expected the values of Rs and Rsh changed
dramatically in this last case. Rs increased constantly
almost tripling every day on average. Rsh dropped
drastically between day 1 and day 2 going from 500 Ohm
to 170 Ohm. These two different behaviors suggested that
two different phenomena were taking place in the device
while ageing. In our case the high level of humidity under
ISOS-D3 conditions was most probably the main cause
driving the ageing. In particular the PEDOT:PSS layer is
known to be strongly affected by moisture ingress, which
causes an increase of its resistivity and an increase of
resistivity of the device [15, 16]. This is probably the
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