Optoelectronics

Research
Group

Quasi-phase-matching frequency
UNIVERSITY of
GLASGOW
conversion processes in
semiconductor waveguides using
intermixing
David C. Hutchings
Dept. Electronics and Electrical Engineering
Optoelectronics
Research Motivation
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UNIVERSITY of
GLASGOW

Semiconductors have large second-order nonlinearities, e.g.

GaAs [d14~170 pmV-1 at 2 µm] has a d2/n3 figure-of-merit
around 10 times larger than LiNbO3.

GaAs has a mature fabrication technology with the potential for
direct integration with laser diode pump sources.
But...

Phase-matching problematic with no natural birefringence in
cubic semiconductors.
Our novel approach:

Quasi-phase-matching using Quantum Well Intermixing.
Optoelectronics
Research Acknowledgements
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UNIVERSITY of
GLASGOW

University of Glasgow Univ. St. Andrews University of Surrey

Stewart Aitchison Tom Brown Russell Gwilliam
John Arnold Majid Ebrahimzadeh
Catrina Bryce Kostas Moutzouris
Amr Saher Helmy Soma Venugopal Rao
Todd Kleckner
John Marsh
Marc Sorel
Colin Stanley
Mike Street
Khalil Zeaiter
Optoelectronics
Research Contents
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UNIVERSITY of
GLASGOW

Quasi-phase-matching

χ(2) in zincblende semiconductors
– Bulk
– Heterostructures

Quantum well intermixing

QPM by intermixing using dielectric caps
– Second harmonic generation
– Process “optimisation” and resolution studies

QPM by intermixing using ion implantation
– Second harmonic generation

Applications and prospects
Optoelectronics
Research Phase-matching in NLO
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UNIVERSITY of
GLASGOW 40.0

Unidirectional transfer of energy between

optical waves requires matched phase
30.0 k=0
velocities.

2 Irradiance

Birefringent phase-matching requires DR

fortuitous combination of optical properties 20.0 DD

in crystal.

Phase-matching can be engineered with
quasi-phase-matching (QPM) where χ(2) 10.0
modulated with appropriate period.

QPM schemes shown here are domain
k=/ 0
reversal (DR) and disordered domain (DD). 0.0
0 Lc 2Lc 3Lc 4Lc 5Lc
 Effective nonlinear coefficient proportional to
spatial Fourier component
dis tance
Optoelectronics
Research χ(2) in zincblende semiconductors
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UNIVERSITY of
GLASGOW

Structure of zincblende (cubic)

semiconductor, e.g. GaAs, InP

Nonequivalence of [111] and [111]
directions

Gives rise to non-zero χ(2)xyz (and
equivalent).
Optoelectronics
Research χ(2) in heterostructures
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UNIVERSITY of
GLASGOW

Generally, imposing a heterostructure breaks symmetry giving

rise to additional independent χ(2) tensor elements.

Symmetric quantum well or superlattice lifts degeneracy
between xyz and zxy tensor elements.

Asymmetric heterostructure introduces non-zero zzz, zxx and xzx
tensor elements, although these tend to be tiny.
Optoelectronics
Research Quantum Well Intermixing
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UNIVERSITY of
GLASGOW

Creation of point defects.

Migration of point defects under
rapid thermal anneal causes
diffusion of group III species.

Smallest bandgap is increased.

Resonance in optical properties
blue-shifted.
– χ(1) for integrated optoelectronics
– χ(2) for quasi-phase-matching
– χ(3) e.g. for spatial soliton dynamics
Optoelectronics
Research Other semiconductor QPM
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UNIVERSITY of
GLASGOW

Domain inversion by patterned substrate growth: lack of

flexibility and losses due to waveguide corrugation.
– Fused substrates: Yoo et al, Appl. Phys. Lett. 66, 3410 (1995).
– Ge layer deposition: Eyres et al, Appl. Phys. Lett. 79, 904 (2001).

Quantum well intermixing of induced coefficient χ(2)zzz in an
asymmetric quantum well structure
– As+ ion implantation: Bouchard et al, Appl. Phys. Lett. 77, 4247 (2000).
– Small modulation results in low efficiency requiring cooled CCD detection.
Optoelectronics
Research Calculated ∆χ(2) in GaAs-AlAs
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UNIVERSITY of
Type I phase-matching Type II phase-matching
GLASGOW

14:14 monolayers GaAs-AlAs superlattice

14 band k⋅⋅p bandstructure model incorporating intermixing
see D.C. Hutchings, Appl. Phys. Lett. 76, 1362 (2000).
Optoelectronics
Research Intermixing using dielectric caps
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UNIVERSITY of
GLASGOW

Intermixing under rapid thermal

annealing:
– Sputtered silica promotes
– PECVD or e-gun silica inhibits

Grating periods range from 5.8 µm to
12.4 µm.

Strip-loaded waveguide fabricated
using reactive ion etching of cladding.

Type I phase-matching uses χ(2)zxy and
converts TE fundamental into TM
second harmonic.

Upper limit on measured optical loss
~2 dB/mm at λ~1500 nm in 4mm
waveguide after processing.
 Optoelectronics
Research SHG Experimental Layout
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UNIVERSITY of
GLASGOW

Ti:Sapphire Laser Semi-monolithic OPO.

850mW @ 820nm ~80mW 1.4→1.6µm
120fs Pulses
~550fs Pulses

Chopper to Lock-in
Lock-in amplifier
Monochromator

PMT
Sample
SHG Signal

PMT Sensitivity 185-900 nm → No OPO signal detected

Polarisation optics inserted as required.
Optoelectronics
Research Second Harmonic Generation
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UNIVERSITY of
GLASGOW 1

Modulation in χ(2)zxy provides

Normalised Power
TM

type I phase-matching.

Narrowing of SH spectrum due to TE

finite bandwidth of QPM grating. 0

740 750 760 770 780

 Fundamental: 11 nm FWHM Second Harmonic Wavelength (nm)

 SH: <3 nm FWHM (limited by slit)

Slope 1.91

Output Power (Log[nW])

10

SH power versus input power
shows quadratic dependence as 1

expected.
0.1

1 10
Input Power (Log[mW])
Optoelectronics
Research Tunability of SHG
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UNIVERSITY of
GLASGOW

Peak SHG wavelength tunes 760

with period of third-order

Second Harmonic Wavelength (nm)

QPM gratings. 750

Lower wavelength limit set

by bandedge absorption of 740

SH.
730

QPM of SHG at 785 nm also 9 10 11 12 13
observed with first-order QPM Grating Period (µm)

gratings.
Optoelectronics
Research Improving Efficiency
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UNIVERSITY of
GLASGOW

Efficiency limited due to low coupling into waveguide using

end-fire (<3mW average power) - improve coupling by
increasing waveguide core width.

Femtosecond source has bandwidth much larger than QPM
grating and also suffers from dispersion - improve with
transform limited picosecond source.

Factor of 9 by using first-order rather than third-order QPM.

Preliminary spatially resolved photoluminescence studies
indicate residual intermixing under caps - further optimise QWI
process and reduce upper cladding thickness.
Optoelectronics
Research Wafer Structure
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UNIVERSITY of
GLASGOW
a ir
Ga As 100 nm
Al 0.60Ga 0.40As 800 nm

Superlattice core with
modulated χ(2) Al 0.56Ga 0.44As 300 nm

Al0.56Ga0.44As buffer layers 150 la ye r s upe rla ttice

75 la ye rs AlAs
600 nm tota l
4.0 nm e a ch
to facilitate end-fire 75 la ye rs Ga As 4.0 nm e a ch
coupling.
Al 0.56Ga 0.44As 300 nm

Al0.6Ga0.4As cladding Al 0.60Ga 0.40As 4000 nm

GaAs cap to prevent

oxidation of AlGaAs
s e mi-ins ula ting (100) Ga As s ubs tra te
Optoelectronics
Research Photo-resist issues
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UNIVERSITY of
GLASGOW

“Standard” intermixing process

uses PMMA (lift-off)

Relative PL intensity for PMMA
lower for grating than fully
intermixed

SEM inspection shows PMMA
contamination on surface after
processing

Figure shows PL using alternate
UV3 (etch) process

Grating resolved down to Λ<3µm
Optoelectronics
Research Intermixing Inhibitor
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UNIVERSITY of
GLASGOW

“Standard” intermixing process

uses PECVD silica as an
intermixing inhibitor

However, annealing at higher
temperatures (to maximise
intermixing under sputtered silica)
results in inconsistent PL shifts.

Alternative inhibitor of electron-
gun deposited silica shows no PL
shift up to 800°C
Optoelectronics
Research Resolution considerations
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d E 2ω iω
UNIVERSITY of
GLASGOW
Growth of SH:
dz
=
cn2ω
ω 2 i ∆kz
d eff ( z ) E e ( )
∞
As Fourier series: d eff ( z ) = ∑ n
d
n = −∞
e − 2π i nz / Λ
where Λ=2πN/∆k

Neglecting depletion and with E2ω(z=-∞)=0 gives E2ω(∞) as the

spatial Fourier transform of deff(z).
Lateral spreading can be modelled by convoluting deff(z) with a
Gaussian (diffusion law). Fourier transform is multiplied by
Gaussian of inverse width:
NπLs
2
−  
Λ  − ( 12 ∆kLs )
2

dN → dN e 
= dN e

Therefore even higher-order QPM needs spatial resolution of

first-order QPM: Ls<<2π/∆k
Optoelectronics
Research QPM Fabrication Recipe
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UNIVERSITY of
GLASGOW

Deposit e-gun silica layer

Coat and develop UV3 grating mask

Reactive ion etch of silica layer

Sputtered silica deposition of >100nm

Rapid thermal anneal at 800°C for
60s

Fabricate rib waveguide

However, still unable to

replicate original silica cap
result – limitation of
introducing defects at surface
Optoelectronics
Research Ion Implantation
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UNIVERSITY of
GLASGOW

As+ ion implantation to

avoid impurities

4MeV energy – TRIM
predicts range of 1.7µm
and straggle of 0.45µm.

Anneal at 850°C for 30s.

Dosage test indicates PL
blueshift begins to saturate
at 1013-1014 ions/cm2.
Optoelectronics
Research QPM Sample Processing
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UNIVERSITY of
GLASGOW

TRIM predicts 1.5µm thick gold mask

sufficient to protect areas from ions.

Gold mask grown by electroplating.

Gold mask etched off after
implantation – some surface damage in
initial sample – introduce protective
layer between wafer and gold.

Strip-loaded waveguide fabricated
using reactive ion etching of cladding.

Measured optical loss ~21 dB/cm at
λ~1550 nm in 2mm QPM waveguide
(Λ=3.7µm) after processing.
Optoelectronics
Research SHG Experimental Layout
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UNIVERSITY of
GLASGOW

Ti:Sapphire Laser Semi-monolithic OPO.

850mW @ 820nm ~80mW 1.4→1.6µm
120fs Pulses
~200fs Pulses

Spectrum Analyser

Semiconductor
Power Meter
SHG Signal Sample λ/2 waveplate

Type I phase-matching: TE fundamental → TM SHG.

No signal detected for TM fundamental.
Optoelectronics
Research Second Harmonic Generation
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UNIVERSITY of
GLASGOW

Modulation in χ(2)zxy
provides type I phase-

Intensity (arb. units)

FWHM=10 nm
matching.

First order grating, 1500 1510 1520 1530 1540 1550
Λ=3.7µm.

Narrowing of SH
spectrum due to finite
FWHM=0.9 nm
bandwidth of QPM
grating.
 Fundamental: 10 nm FWHM 750 755 760 765 770 775
Wavelength (nm)
 SH: 0.9 nm FWHM
Optoelectronics
Research Tuning/Power dependence
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UNIVERSITY of 800 (a)

GLASGOW

SH Power (nW)
600

400

Tuning curve determined by
broader bandwidth of 200

femtosecond source, rather 0

1500 1515 1530 1545 1560 1575
than sinc2 for QPM. Wavelength(nm)

Quadratic power dependence (b)
1000
with indication of saturation
at highest powers.
P2ω(nW)
100

10
10 100
P ω (mW)
Optoelectronics
Research Efficiency estimates
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UNIVERSITY of
GLASGOW

Largest SH power measured was 1.5µW for λ=767nm.

Estimate ~7µW SH in the waveguide, accounting for losses in
measurement system.

Measured transmitted fundamental of 2.9mW which
corresponds to ~11mW immediately after front facet.

Hence a maximum conversion efficiency of ~0.06%

Using femtosecond source substantially reduces efficiency
– Bandwidth broader than QPM grating
– Dispersion
– Walk-off
Optoelectronics
Research Future work: 3-wave processes
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UNIVERSITY of
GLASGOW

Type II SHG (larger ∆χ(2)) Bra gg S a tura ble Ga in P a s s ive Bra gg

gra ting a bs orbe r pha s e -ma tche d gra ting

Difference frequency
generation

Parametric fluorescence

Parametric amplification

Parametric oscillator
 External mirrors
 Integrated RIE deep-etched Inte gra te d Optica l P a ra me tric Os cillator
mirrors

Integrated laser diode pump
Optoelectronics
Research Conclusions
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UNIVERSITY of
GLASGOW

Novel quasi-phase-matching process developed based on quantum

well intermixing in semiconductor superlattice waveguides.

Second-harmonic generation demonstrated using first- and third-order
gratings and type I phase-matching with bulk-like χ(2)zxy.

QPM demonstrated using silica caps but low efficiency, lack of
consistency in processing and resolution problems.

As+ ion-induced intermixing improves efficiencies (grating
resolution) such that a conventional semiconductor power meter,
rather than specialised low-power detection, can be used.
Ion implantation result published in Optics Lett. 28, 911 (2003).