MCC TM

 
omponents
Micro Commercial Components
20736 Marilla Street Chatsworth

S9018
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Features
• TO-92 Plastic-Encapsulate Transistors
• Capable of 0.31Watts(Tamb=25OC) of Power Dissipation. NPN Silicon
• Collector-current 0.05A
• Collector-base Voltage 25V Transistors
• Operating and storage junction temperature range: -55OC to +150 OC
• Marking Code: S9018

TO-92
A E

C
BE

Electrical Characteristics @ 25OC Unless Otherwise Specified B

Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CBO Collector-Base Breakdown Voltage 25 --- Vdc
(IC=100uAdc, IE =0)
V(BR)CEO Collector-Emitter Breakdown Voltage 18 --- Vdc
(IC=0.1mAdc, IB =0)
V(BR)EBO Emitter-Base Breakdown Voltage 4.0 --- Vdc C
(IE =100uAdc, IC=0)
ICBO Collector Cutoff Current --- 0.1 uAdc
(VCB=20Vdc, IE =0)
ICEO Collector Cutoff Current --- 0.1 uAdc
(VCE=15Vdc, IB =0)
IEBO Emitter Cutoff Current --- 0.1 uAdc
(VEB =3.0Vdc, IC=0) D
ON CHARACTERISTICS
hFE DC Current Gain 28 270 ---
(IC=1.0mAdc, V CE=5.0Vdc)
VCE(sat) Collector-Emitter Saturation Voltage --- 0.5 Vdc
(IC=10mAdc, IB =1.0mAdc)
VBE(sat) Base-Emitter Saturation Voltage --- 1.4 Vdc
(IC=10mAdc, IB =1.0mAdc) G
SMALL-SIGNAL CHARACTERISTICS DIMENSIONS

fT Transistor Frequency 600 --- MHz INCHES MM

(IC=5.0mAdc, V CE=5.0Vdc, DIM MIN MAX MIN MAX NOTE
f=400MHz) A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
CLASSIFICATION OF H FE C .550 .590 13.97 14.97
D .010 .020 0.36 0.56
Rank G H I E .130 .160 3.30 3.96
Range 70-108 97-146 130-200 G .010 .104 2.44 2.64

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Revision: 3 2004/07/26