MOSFET Internal capacitances

Prof.Dr.G.Aarthi
 MOSFET High Frequency Model

• In our earlier study of MOSFETs, we ignored the effects of capacitances

that exist between the terminals.
• We assumed that the steady-state charges are acquired
instantaneously.
• The finite time required to charge and discharge the various internal
capacitances were not taken into account.
• And the amplifier has uniform gain over the entire spectrum.
• But the reality is the gain does go down with frequency after a certain
value.
• To explain these the models should incorporate capacitors.
 MOSFET Internal Capacitances
1. The gate capacitive effect: The polysilicon gate and the channel
separated by the oxide layer forms a capacitance. Its value per
unit area is Cox.
 MOSFET Internal Capacitances
2. The source-body and drain-body depletion layer capacitances:
The reverse biased pn junctions formed by the n+ source region
and the p-type substrate as well as the n+ drain region and the p-
type substrate also form capacitances – the source diffusion and
the drain diffusion capacitances.
 MOSFET Internal Capacitances
Between the four terminals G, D, S and B five capacitances have
been identified.

Cgs  Gate to Source capacitance

Cgd  Gate to Drain capacitance

Cgb  Gate to Bulk/Body capacitance

Csb  Source to Bulk capacitance

Cdb  Drain to Bulk capacitance

 The Gate Capacitive Effect
The gate has three capacitances in the model. Namely, Cgs, Cgd and Cgb.

Triode Region
The channel will be of uniform depth.
The gate to channel capacitance will be
WLCox and can be modelled by dividing
it equally between the source and drain
Ends.

Cgs = Cgd = ½WLCox. (triode region)

 The Gate Capacitive Effect
Saturation Region
The channel is tapered and is pinched
off at or near the drain end.

• Cgs = ⅔WLCox. (saturation region)

• Cgd = 0 ( ,, ,, )

Cut off Region

When the MOSFET is cutoff the channel disappears and thus

Cgs = Cgd = 0;

Cgb = WLCox;
 The Gate Capacitive Effect
• There is another tiny capacitor component to be added to Cgs and Cgd
in all the preceding formulas as the source and drain diffusions extend
slightly under the gate oxide to an extend of Lov = 0.05 to 0.1L.

• The overlap capacitance Cov = WLovCox.

 The Junction Capacitances

• The depletion layer capacitances of the two reverse-biased pn

junctions are calculated as – source diffusion, source-body
capacitance

Csb = Csb0/√[1+(VSB/V0)]

where Csb0 value of Csb at zero body-source bias

VSB magnitude of the reverse bias voltage

V0  junction built-in voltage (0.6- 0.8 V).

 The Junction Capacitances

• The drain-body capacitance

Cdb = Cdb0/√[1+(VDB/V0)]

Cdb0 capacitance at zero reverse-bias voltage

VDB magnitude of the reverse bias voltage.