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FEATURES
D TrenchFETr Power MOSFETS
PRODUCT SUMMARY D 175_C Junction Temperature
D New Package with Low Thermal Resistance
V(BR)DSS (V) rDS(on) (W) ID (A)
100 0.0094 @ VGS = 10 V 90 a
APPLICATIONS
D Automotive
- 42-V Power Bus
- DC/DC Conversion
- Motor Drivers
- Injection Systems
D
TO-220AB
G D S
S
Top View
SUP90N10-09 N-Channel MOSFET
TC = 25_C 90a
_
Continuous Drain Current (TJ = 175_C) ID
TC = 125_C 64a
A
Pulsed Drain Current IDM 240
Avalanche Current IAR 75
Repetitive Avalanche Energyb L = 0.1 mH EAR 280 mJ
TC = 25_C 300c
Maximum Power Dissipationb PD W
TA = 25_Cd 3.75
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 175 _C
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Static
Drain-Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 mA 100
V
Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 2 4
VDS = 80 V, VGS = 0 V 1
m
mA
Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V, TJ = 125_C 50
VDS = 80 V, VGS = 0 V, TJ = 175_C 250 mA
On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V 120 A
VGS = 10 V, ID = 30 A 0.0075 0.0094
Dynamicb
Input Capacitance Ciss 8700
Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 740 pF
Reverse Transfer Capacitance Crss 450
Total Gate Chargec Qg 140 210
Gate-Source Chargec Qgs VDS = 50 V, VGS = 10 V, ID = 85 A 41 nC
Gate-Drain Chargec Qgd 41
Turn-On Delay Timec td(on) 20 30
Rise Timec tr 110 170
VDD = 50 V, RL = 0.6 W
ns
Turn-Off Delay Timec td(off) ID ^ 85 A, VGEN = 10 V, RG = 2.5 W 65 100
Fall Timec tf 100 150
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
VGS = 10 thru 6 V
200 200
I D - Drain Current (A)
100 100
TC = 125_C
50 50
25_C
4V -55 _C
0 0
0 2 4 6 8 10 0 1 2 3 4 5 6
200 0.012
r DS(on) - On-Resistance ( W )
25_C
g fs - Transconductance (S)
100 0.006
50 0.003
0 0.000
0 15 30 45 60 75 90 0 20 40 60 80 100 120
10000 VDS = 50 V
V GS - Gate-to-Source Voltage (V)
16 ID = 85 A
Ciss
C - Capacitance (pF)
8000
12
6000
8
4000
4
2000 Crss
Coss
0 0
0 20 40 60 80 100 0 50 100 150 200 250
1.0
0.5
0.0 1
-50 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2
120
ID = 10 mA
100
V(BR)DSS (V)
10 110
105
IAV (A) @ TA = 150_C
1
100
0.1 95
-50 -25 0 25 50 75 100 125 150 175
0.00001 0.0001 0.001 0.01 0.1 1
tin (Sec) TJ - Junction Temperature (_C)
THERMAL RATINGS
100
80 100 ms,
60 10
1 ms
10 ms
40 dc, 100 ms
1 TC = 25_C
20 Single Pulse
0
0.1
0 25 50 75 100 125 150 175 0.1 1 10 100
0.2
Thermal Impedance
0.1
0.1 0.05
0.02
Single Pulse
0.01
10- 4 10- 3 10- 2 10- 1 1
Square Wave Pulse Duration (sec)