FQP8P10 P-Channel MOSFET

March 2013

FQP8P10
P-Channel QFET® MOSFET
-100 V, -8 A, 530 mΩ

Description Features
This P-Channel enhancement mode power MOSFET is • -8 A, -100 V, RDS(on)=530 mΩ(Max.) @VGS=-10 V, ID=-4 A
produced using Fairchild Semiconductor®’s proprietary • Low Gate Charge (Typ. 12 nC)
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to • Low Crss (Typ. 30 pF)
reduce on-state resistance, and to provide superior • 100% Avalanche Tested
switching performance and high avalanche energy • 175°C Maximum Junction Temperature Rating
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.

G
G
DS TO-220
S

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter FQP8P10 Unit

VDSS Drain-Source Voltage -100 V
ID Drain Current - Continuous (TC = 25°C) -8.0 A
- Continuous (TC = 100°C) -5.7 A
IDM Drain Current - Pulsed (Note 1) -32 A
VGSS Gate-Source Voltage ± 30 V
EAS Single Pulsed Avalanche Energy (Note 2) 150 mJ
IAR Avalanche Current (Note 1) -8.0 A
EAR Repetitive Avalanche Energy (Note 1) 6.5 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) -6.0 V/ns
PD Power Dissipation (TC = 25°C) 65 W
- Derate above 25°C 0.43 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C
Maximum lead temperature for soldering purposes,
TL 300 °C
1/8" from case for 5 seconds

Thermal Characteristics
Symbol Parameter Typ Max Unit
RθJC Thermal Resistance, Junction-to-Case -- 2.31 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.5 -- °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQP8P10 Rev. C0
 FQP8P10 P-Channel MOSFET
Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Unit

Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -100 -- -- V
∆BVDSS Breakdown Voltage Temperature
ID = -250 µA, Referenced to 25°C -- -0.1 -- V/°C
/ ∆TJ Coefficient
IDSS VDS = -100 V, VGS = 0 V -- -- -1 µA
Zero Gate Voltage Drain Current
VDS = -80 V, TC = 150°C -- -- -10 µA
IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -2.0 -- -4.0 V
RDS(on) Static Drain-Source
VGS = -10 V, ID = -4.0 A -- 0.41 0.53 Ω
On-Resistance
gFS Forward Transconductance VDS = -40 V, ID = -4.0 A (Note 4) -- 4.3 -- S

Dynamic Characteristics
Ciss Input Capacitance VDS = -25 V, VGS = 0 V, -- 360 470 pF
Coss Output Capacitance f = 1.0 MHz -- 120 155 pF
Crss Reverse Transfer Capacitance -- 30 40 pF

Switching Characteristics
td(on) Turn-On Delay Time -- 11 30 ns
VDD = -50 V, ID = -8.0 A,
tr Turn-On Rise Time -- 110 230 ns
RG = 25 Ω
td(off) Turn-Off Delay Time -- 20 50 ns
(Note 4, 5)
tf Turn-Off Fall Time -- 35 80 ns
Qg Total Gate Charge VDS = -80 V, ID = -8.0 A, -- 12 15 nC
Qgs Gate-Source Charge VGS = -10 V -- 3.0 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 6.4 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current -- -- -8.0 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -32 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -8.0 A -- -- -4.0 V
trr Reverse Recovery Time VGS = 0 V, IS = -8.0 A, -- 98 -- ns
Qrr Reverse Recovery Charge dIF / dt = 100 A/µs (Note 4)
-- 0.35 -- µC

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 3.5mH, IAS = -8.0A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -8.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature

©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQP8P10 Rev. C0
 FQP8P10 P-Channel MOSFET
Typical Characteristics

VGS
Top : -15.0 V
1 -10.0 V
10 1
-8.0 V 10
-7.0 V
-6.5 V
-5.5 V

-I D , Drain Current [A]

-ID, Drain Current [A]

-5.0 V
0 Bottom : -4.5 V
10 175℃

0
10
25℃
-1
10
-55℃
※ Notes :
※ Notes :
1. VDS = -40V
1. 250μ s Pulse Test
2. 250μ s Pulse Test
2. TC = 25℃
-2 -1
10 10
10
-1
10
0
10
1 2 4 6 8 10

-VDS, Drain-Source Voltage [V] -VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1.5

1.2 VGS = - 10V 1

10
Drain-Source On-Resistance

-I DR , Reverse Drain Current [A]

RDS(on) [ Ω ],

0.9 VGS = - 20V

0.6 0
10

175℃ 25℃
0.3 ※ Notes :
1. VGS = 0V
※ Note : TJ = 25℃
2. 250μ s Pulse Test

0.0 10
-1

0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0

-ID , Drain Current [A] -VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature

900 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
800
Coss Crss = Cgd VDS = -20V
10
700 Ciss VDS = -50V
-V GS , Gate-Source Voltage [V]

VDS = -80V
600 ※ Notes : 8
Capacitance [pF]

1. VGS = 0 V
500 2. f = 1 MHz
6
400
Crss
300 4

200
2
100 ※ Note : ID = -8.0 A

0 0
10
-1
10
0
10
1 0 2 4 6 8 10 12 14

-VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQP8P10 Rev. C0
 FQP8P10 P-Channel MOSFET
Typical Characteristics (Continued)

1.2 3.0

2.5
Drain-Source Breakdown Voltage

1.1

Drain-Source On-Resistance
-BV DSS , (Normalized)

RDS(ON) , (Normalized)
2.0

1.0 1.5

1.0

0.9 ※ Notes :
1. VGS = 0 V ※ Notes :
2. ID = -250 μ A 0.5 1. VGS = -10 V
2. ID = -4.0 A

0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

10
2
10
Operation in This Area
is Limited by R DS(on)
8
100 µs
1 ms
-I D, Drain Current [A]

-I D, Drain Current [A]

1
10
6
10 ms
DC

4
0
10
※ Notes :
o 2
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2 25 50 75 100 125 150 175

-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
( t) , T h e r m a l R e s p o n s e

0 D = 0 .5
10
※ N o te s :
0 .2 1 . Z θ J C ( t ) = 2 . 3 1 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
0 .1 3 . T J M - T C = P D M * Z θ J C( t )

0 .0 5
-1
10
0 .0 2
PDM
0 .0 1
JC

t1
s in g le p u ls e
θ

t2
Z

-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQP8P10 Rev. C0
 FQP8P10 P-Channel MOSFET
Gate Charge Test Circuit & Waveform

VGS
Same Type
50KΩ
as DUT Qg
12V 200nF
300nF -10V
VDS
VGS Qgs Qgd

DUT
-3mA

Charge

Resistive Switching Test Circuit & Waveforms

RL
VDS t on t off

td(on) tr td(off)
VGS VDD tf

RG VGS
10%

-10V DUT

90%
VDS

Unclamped Inductive Switching Test Circuit & Waveforms

L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
tp Time
ID

RG VDD VDS (t)

VDD
ID (t)
-10V DUT
IAS
tp BVDSS

©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQP8P10 Rev. C0
 FQP8P10 P-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

VDS

DUT _

I SD
L

Driver
RG
Compliment of DUT
(N-Channel) VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

Body Diode Reverse Current

I SD
( DUT ) IRM

di/dt

IFM , Body Diode Forward Current

VDS VSD
( DUT )

Body Diode VDD

Forward Voltage Drop

Body Diode Recovery dv/dt

©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQP8P10 Rev. C0
 FQP8P10 P-Channel MOSFET
Mechanical Dimensions

TO-220

Dimensions in Millimeters

©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQP8P10 Rev. C0
 FQP8P10 P-Channel MOSFET
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

No Identification Needed Full Production make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64

©2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

FQP8P10 Rev. C0