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N-MOSFET:
MOSFET stands for Metal Oxide Silicon Field Effect Transistor or Metal
Oxide Semiconductor Field Effect Transistor. This is also called as
IGFET meaning Insulated Gate Field Effect Transistor. The FET is
operated in both depletion and enhancement modes of operation. It is
used as an amplifier in this circuit. It consists of 4 terminals source,
drain, gate, and substrate. The MOSFET works by electronically varying
the width of a channel along which charge carriers flow (electrons or
holes). The charge carriers enter the channel at source and exit via the
drain. The width of the channel is controlled by the voltage on an
electrode is called gate which is located between source and drain. It is
insulated from the channel near an extremely thin layer of metal oxide.
The purpose of using the TINA SPICE software was to simulate the
circuital model and to observe its behaviour, that is its transient
response and its ac transfer characteristics.