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The r Parameters
r primarily denotes the internal resistance to the transistor
The r Parameters
r’b – effect is usually small that it can be replaced
by a short circuit
r’c – is about 100 kilo ohms that it can be replaced
by an open circuit
r’e – appears between emitter and base current
- the resistance “seen” looking into the emitter of
a forward-biased transistor
A model is the combination of circuit elements, properly
chosen, that best approximates the actual behaviour of a
semiconductor device under specific operating conditions.
REMOVAL OF THE
ELEMENTS BYPASSED
BY THE SHORT CIRCUIT
EQUIVALENT AND
REDRAWING THE
CIRCUIT (steps 3 & 4)
SAMPLE PROBLEM
For a common-base configuration on the figure with IE = 4 mA, α=0.98, and an ac
signal of 2 mV applied between the base and emitter terminals:
(a) Determine the input impedance.
(b) Calculate the voltage gain if a load of 0.56 k is connected to the output terminals.
Solving for Zo
Phase Relation
The negative sign in
Av reveals a 180deg
phase shift between
Vi and Vo
Solving for Ai
SAMPLE PROBLEM
For the network below without CE (unbypassed), determine:
Solution
EMITTER FOLLOWER CONFIGURATION
Solving for Av
Solving for Ai
SAMPLE PROBLEM
For the emitter follower network, determine:
Solution
COLLECTOR FEEDBACK
CONFIGURATION